JPWO2021257180A5 - - Google Patents
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- Publication number
- JPWO2021257180A5 JPWO2021257180A5 JP2022558553A JP2022558553A JPWO2021257180A5 JP WO2021257180 A5 JPWO2021257180 A5 JP WO2021257180A5 JP 2022558553 A JP2022558553 A JP 2022558553A JP 2022558553 A JP2022558553 A JP 2022558553A JP WO2021257180 A5 JPWO2021257180 A5 JP WO2021257180A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- semiconductor device
- integrated semiconductor
- gate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/903,961 US11417644B2 (en) | 2020-06-17 | 2020-06-17 | Integration of multiple discrete GaN devices |
| US16/903,961 | 2020-06-17 | ||
| PCT/US2021/028740 WO2021257180A1 (en) | 2020-06-17 | 2021-04-23 | Integrated transistors with shared electrode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023530546A JP2023530546A (ja) | 2023-07-19 |
| JP2023530546A5 JP2023530546A5 (https=) | 2024-04-22 |
| JPWO2021257180A5 true JPWO2021257180A5 (https=) | 2024-04-22 |
Family
ID=75888280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022558553A Pending JP2023530546A (ja) | 2020-06-17 | 2021-04-23 | 共有電極を備えた集積トランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11417644B2 (https=) |
| EP (1) | EP4169065A1 (https=) |
| JP (1) | JP2023530546A (https=) |
| CN (1) | CN115485827A (https=) |
| WO (1) | WO2021257180A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11863130B2 (en) | 2020-04-03 | 2024-01-02 | Wolfspeed, Inc. | Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias |
| JP7474349B2 (ja) | 2020-04-03 | 2024-04-24 | ウルフスピード インコーポレイテッド | Ｒｆ増幅器パッケージ |
| US12074123B2 (en) | 2020-04-03 | 2024-08-27 | Macom Technology Solutions Holdings, Inc. | Multi level radio frequency (RF) integrated circuit components including passive devices |
| JP7691434B2 (ja) * | 2020-04-03 | 2025-06-11 | マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド | 裏面ソース端子、ゲート端子及び／又はドレイン端子を有するｉｉｉ族窒化物ベースの高周波増幅器 |
| US20220376041A1 (en) * | 2021-04-12 | 2022-11-24 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US20240429870A1 (en) * | 2023-06-23 | 2024-12-26 | Macom Technology Solutions Holdings, Inc. | Group III Nitride Doherty Amplifier Using Different Epitaxial Structures |
| WO2025197830A1 (ja) * | 2024-03-21 | 2025-09-25 | ヌヴォトンテクノロジージャパン株式会社 | ドハティ増幅器 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4120394A1 (de) | 1991-06-20 | 1992-12-24 | Bosch Gmbh Robert | Monolithisch integrierte schaltungsanordnung |
| JP3439290B2 (ja) * | 1995-12-28 | 2003-08-25 | 日本電気株式会社 | 半導体装置 |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| SE528473C2 (sv) * | 2005-02-28 | 2006-11-21 | Infineon Technologies Ag | Monolitiskt integrerad effektförstärkaranordning |
| CN1893084A (zh) * | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置 |
| KR20070036939A (ko) * | 2005-09-30 | 2007-04-04 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
| JP4743077B2 (ja) * | 2006-10-23 | 2011-08-10 | 三菱電機株式会社 | 高周波電力増幅器 |
| EP2339746B1 (en) | 2009-12-15 | 2013-02-20 | Nxp B.V. | Doherty amplifier with composed transfer characteristic having multiple peak amplifiers |
| JP2012013664A (ja) * | 2010-05-31 | 2012-01-19 | Toshiba Corp | 段間プローブ用パターン構造、段間測定方法、およびマルチチップモジュール高周波回路 |
| JP6025295B2 (ja) * | 2010-06-24 | 2016-11-16 | 富士通株式会社 | 化合物半導体装置 |
| JP5361951B2 (ja) * | 2011-06-17 | 2013-12-04 | 株式会社東芝 | 半導体電力増幅器 |
| WO2014188651A1 (ja) * | 2013-05-20 | 2014-11-27 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| US9030260B2 (en) * | 2013-07-19 | 2015-05-12 | Alcatel Lucent | Dual-band high efficiency Doherty amplifiers with hybrid packaged power devices |
| US10050139B2 (en) * | 2016-06-24 | 2018-08-14 | Infineon Technologies Ag | Semiconductor device including a LDMOS transistor and method |
| US10978583B2 (en) * | 2017-06-21 | 2021-04-13 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
| US20190028065A1 (en) * | 2017-07-24 | 2019-01-24 | Macom Technology Solutions Holdings, Inc. | Fet operational temperature determination by gate structure resistance thermometry |
| US10325833B1 (en) | 2018-02-20 | 2019-06-18 | Newport Fab, Llc | Bent polysilicon gate structure for small footprint radio frequency (RF) switch |
| US10600746B2 (en) * | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
-
2020
- 2020-06-17 US US16/903,961 patent/US11417644B2/en active Active
-
2021
- 2021-04-23 JP JP2022558553A patent/JP2023530546A/ja active Pending
- 2021-04-23 CN CN202180025147.4A patent/CN115485827A/zh active Pending
- 2021-04-23 EP EP21724959.8A patent/EP4169065A1/en active Pending
- 2021-04-23 WO PCT/US2021/028740 patent/WO2021257180A1/en not_active Ceased
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