JPWO2021199635A1 - - Google Patents

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Publication number
JPWO2021199635A1
JPWO2021199635A1 JP2022511579A JP2022511579A JPWO2021199635A1 JP WO2021199635 A1 JPWO2021199635 A1 JP WO2021199635A1 JP 2022511579 A JP2022511579 A JP 2022511579A JP 2022511579 A JP2022511579 A JP 2022511579A JP WO2021199635 A1 JPWO2021199635 A1 JP WO2021199635A1
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JP
Japan
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Granted
Application number
JP2022511579A
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Japanese (ja)
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JP7626754B2 (ja
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Publication of JPWO2021199635A1 publication Critical patent/JPWO2021199635A1/ja
Priority to JP2025008993A priority Critical patent/JP7827903B2/ja
Application granted granted Critical
Publication of JP7626754B2 publication Critical patent/JP7626754B2/ja
Active legal-status Critical Current
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/461Leadframes specially adapted for cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • H10W70/417Bonding materials between chips and die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/457Materials of metallic layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/464Additional interconnections in combination with leadframes
    • H10W70/465Bumps or wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/481Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/521Structures or relative sizes of bond wires
    • H10W72/527Multiple bond wires having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
JP2022511579A 2020-03-30 2021-01-28 半導体装置 Active JP7626754B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025008993A JP7827903B2 (ja) 2020-03-30 2025-01-22 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020060723 2020-03-30
JP2020060722 2020-03-30
JP2020060723 2020-03-30
JP2020060722 2020-03-30
PCT/JP2021/003011 WO2021199635A1 (ja) 2020-03-30 2021-01-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025008993A Division JP7827903B2 (ja) 2020-03-30 2025-01-22 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2021199635A1 true JPWO2021199635A1 (https=) 2021-10-07
JP7626754B2 JP7626754B2 (ja) 2025-02-04

Family

ID=77929693

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022511579A Active JP7626754B2 (ja) 2020-03-30 2021-01-28 半導体装置
JP2025008993A Active JP7827903B2 (ja) 2020-03-30 2025-01-22 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025008993A Active JP7827903B2 (ja) 2020-03-30 2025-01-22 半導体装置

Country Status (5)

Country Link
US (1) US20230105834A1 (https=)
JP (2) JP7626754B2 (https=)
CN (1) CN115380375A (https=)
DE (1) DE212021000164U1 (https=)
WO (1) WO2021199635A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112022005309T5 (de) * 2021-12-03 2024-08-29 Rohm Co., Ltd. Halbleiterbauteil
KR102890102B1 (ko) * 2022-09-16 2025-11-24 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치 및 실장 기판

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264697A (ja) * 1995-03-06 1996-10-11 Motorola Inc 半導体リードフレーム構造およびその製造方法
WO2014128899A1 (ja) * 2013-02-22 2014-08-28 株式会社 日立製作所 樹脂封止型電子制御装置
WO2015151273A1 (ja) * 2014-04-04 2015-10-08 三菱電機株式会社 半導体装置
JP2016056451A (ja) * 2014-09-05 2016-04-21 Jfeスチール株式会社 軟窒化用鋼および部品ならびにこれらの製造方法
JP2017208434A (ja) * 2016-05-18 2017-11-24 Shプレシジョン株式会社 リードフレームの製造方法

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JPS5434678A (en) * 1977-08-22 1979-03-14 Matsushita Electronics Corp Semiconductor device
JP2006032871A (ja) * 2004-07-22 2006-02-02 Toshiba Corp 半導体装置
JP5090088B2 (ja) * 2007-07-05 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5123633B2 (ja) * 2007-10-10 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置および接続材料
US8779569B2 (en) * 2010-01-18 2014-07-15 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011121756A1 (ja) * 2010-03-31 2011-10-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8324025B2 (en) * 2010-04-22 2012-12-04 Team Pacific Corporation Power semiconductor device packaging
JP5525335B2 (ja) * 2010-05-31 2014-06-18 株式会社日立製作所 焼結銀ペースト材料及び半導体チップ接合方法
JP5264939B2 (ja) * 2011-01-14 2013-08-14 新光電気工業株式会社 パッケージ部品及び半導体パッケージ
JP6121692B2 (ja) * 2012-11-05 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5975911B2 (ja) * 2013-03-15 2016-08-23 ルネサスエレクトロニクス株式会社 半導体装置
WO2017154072A1 (ja) * 2016-03-07 2017-09-14 三菱電機株式会社 半導体装置および半導体装置の製造方法
US10777476B2 (en) * 2016-06-14 2020-09-15 Mitsubishi Electric Corporation Semiconductor device
JP2018056451A (ja) * 2016-09-30 2018-04-05 ルネサスエレクトロニクス株式会社 半導体装置
JP6408038B2 (ja) * 2017-01-10 2018-10-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US11626352B2 (en) * 2017-08-02 2023-04-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
JP6877561B2 (ja) * 2017-09-21 2021-05-26 三菱電機株式会社 半導体装置およびこれを備えた電力変換装置
JP7016677B2 (ja) * 2017-11-21 2022-02-07 新光電気工業株式会社 リードフレーム、半導体装置、リードフレームの製造方法
JP7346385B2 (ja) * 2018-04-11 2023-09-19 ローム株式会社 半導体装置
CN112640096A (zh) * 2018-09-06 2021-04-09 三菱电机株式会社 半导体装置
US11521917B2 (en) * 2019-05-23 2022-12-06 Rohm Co., Ltd. Semiconductor device
US11302652B2 (en) * 2019-12-20 2022-04-12 Texas Instruments Incorporated Semiconductor package substrate with a smooth groove about a perimeter of a semiconductor die
WO2021155537A1 (en) * 2020-02-06 2021-08-12 Texas Instruments Incorporated Copper wire bond on gold bump on semiconductor die bond pad

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH08264697A (ja) * 1995-03-06 1996-10-11 Motorola Inc 半導体リードフレーム構造およびその製造方法
WO2014128899A1 (ja) * 2013-02-22 2014-08-28 株式会社 日立製作所 樹脂封止型電子制御装置
WO2015151273A1 (ja) * 2014-04-04 2015-10-08 三菱電機株式会社 半導体装置
JP2016056451A (ja) * 2014-09-05 2016-04-21 Jfeスチール株式会社 軟窒化用鋼および部品ならびにこれらの製造方法
JP2017208434A (ja) * 2016-05-18 2017-11-24 Shプレシジョン株式会社 リードフレームの製造方法

Also Published As

Publication number Publication date
JP2025061585A (ja) 2025-04-10
CN115380375A (zh) 2022-11-22
US20230105834A1 (en) 2023-04-06
JP7827903B2 (ja) 2026-03-10
DE212021000164U1 (de) 2021-11-29
WO2021199635A1 (ja) 2021-10-07
JP7626754B2 (ja) 2025-02-04

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