JPWO2021067150A5 - - Google Patents
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- JPWO2021067150A5 JPWO2021067150A5 JP2022519790A JP2022519790A JPWO2021067150A5 JP WO2021067150 A5 JPWO2021067150 A5 JP WO2021067150A5 JP 2022519790 A JP2022519790 A JP 2022519790A JP 2022519790 A JP2022519790 A JP 2022519790A JP WO2021067150 A5 JPWO2021067150 A5 JP WO2021067150A5
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- JP
- Japan
- Prior art keywords
- formula
- compound
- composition
- pure
- sulfuric acid
- Prior art date
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023165894A JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962908083P | 2019-09-30 | 2019-09-30 | |
| US62/908,083 | 2019-09-30 | ||
| PCT/US2020/052999 WO2021067150A1 (en) | 2019-09-30 | 2020-09-28 | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Division JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022550171A JP2022550171A (ja) | 2022-11-30 |
| JP2022550171A5 JP2022550171A5 (https=) | 2023-10-05 |
| JPWO2021067150A5 true JPWO2021067150A5 (https=) | 2023-10-05 |
| JP7566895B2 JP7566895B2 (ja) | 2024-10-15 |
Family
ID=75338528
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022519790A Active JP7566895B2 (ja) | 2019-09-30 | 2020-09-28 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP7566895B2 (https=) |
| KR (1) | KR102874253B1 (https=) |
| CN (1) | CN114466852A (https=) |
| TW (1) | TWI864116B (https=) |
| WO (1) | WO2021067150A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240011174A (ko) * | 2021-05-21 | 2024-01-25 | 버슘머트리얼즈 유에스, 엘엘씨 | 반도체 디바이스의 제조 동안 규소-게르마늄/규소 스택으로부터 규소-게르마늄 합금을 선택적으로 제거하기 위한 에칭 용액 |
| JP2025515839A (ja) | 2022-05-13 | 2025-05-20 | インテグリス・インコーポレーテッド | 窒化ケイ素エッチング組成物および方法 |
| WO2023230394A1 (en) * | 2022-05-23 | 2023-11-30 | Versum Materials Us, Llc | Formulated alkaline chemistry for polysilicon exhume |
| KR20250161006A (ko) * | 2023-03-15 | 2025-11-14 | 엔테그리스, 아이엔씨. | 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법 |
| KR102794133B1 (ko) * | 2023-11-27 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각용 조성물 |
| US20260092212A1 (en) * | 2024-09-27 | 2026-04-02 | Entegris, Inc. | Selective etch inhibitor compounds and related methods |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207731A (ja) * | 2002-12-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 電子デバイスの製造 |
| KR102338526B1 (ko) * | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형 |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| JP6580397B2 (ja) * | 2014-07-17 | 2019-09-25 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR101728951B1 (ko) * | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
| JP6446003B2 (ja) * | 2015-08-27 | 2018-12-26 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法およびエッチング液 |
| KR102415960B1 (ko) * | 2016-02-05 | 2022-07-01 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| CN110028971B (zh) * | 2017-12-28 | 2021-11-09 | Oci有限公司 | 蚀刻组合物及利用其的蚀刻方法 |
| KR102484988B1 (ko) * | 2017-12-29 | 2023-01-09 | 오씨아이 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
-
2020
- 2020-09-28 TW TW109133617A patent/TWI864116B/zh active
- 2020-09-28 KR KR1020227014745A patent/KR102874253B1/ko active Active
- 2020-09-28 CN CN202080068430.0A patent/CN114466852A/zh active Pending
- 2020-09-28 JP JP2022519790A patent/JP7566895B2/ja active Active
- 2020-09-28 WO PCT/US2020/052999 patent/WO2021067150A1/en not_active Ceased
-
2023
- 2023-09-27 JP JP2023165894A patent/JP7695316B2/ja active Active
-
2025
- 2025-02-26 JP JP2025028667A patent/JP2025087745A/ja not_active Withdrawn
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