JPWO2021061922A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2021061922A5
JPWO2021061922A5 JP2022519388A JP2022519388A JPWO2021061922A5 JP WO2021061922 A5 JPWO2021061922 A5 JP WO2021061922A5 JP 2022519388 A JP2022519388 A JP 2022519388A JP 2022519388 A JP2022519388 A JP 2022519388A JP WO2021061922 A5 JPWO2021061922 A5 JP WO2021061922A5
Authority
JP
Japan
Prior art keywords
hydroxylamine
acid
composition
mixture
derivative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022519388A
Other languages
English (en)
Japanese (ja)
Other versions
JP7628116B2 (ja
JP2022550365A5 (https=
JP2022550365A (ja
Publication date
Application filed filed Critical
Priority claimed from PCT/US2020/052406 external-priority patent/WO2021061922A1/en
Publication of JP2022550365A publication Critical patent/JP2022550365A/ja
Publication of JPWO2021061922A5 publication Critical patent/JPWO2021061922A5/ja
Publication of JP2022550365A5 publication Critical patent/JP2022550365A5/ja
Application granted granted Critical
Publication of JP7628116B2 publication Critical patent/JP7628116B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022519388A 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用 Active JP7628116B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962906810P 2019-09-27 2019-09-27
US62/906,810 2019-09-27
PCT/US2020/052406 WO2021061922A1 (en) 2019-09-27 2020-09-24 Compositions for removing etch residues, methods of using and use thereof

Publications (4)

Publication Number Publication Date
JP2022550365A JP2022550365A (ja) 2022-12-01
JPWO2021061922A5 true JPWO2021061922A5 (https=) 2023-10-02
JP2022550365A5 JP2022550365A5 (https=) 2023-10-02
JP7628116B2 JP7628116B2 (ja) 2025-02-07

Family

ID=75166177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022519388A Active JP7628116B2 (ja) 2019-09-27 2020-09-24 ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用

Country Status (7)

Country Link
US (1) US12298669B2 (https=)
EP (1) EP4034629A4 (https=)
JP (1) JP7628116B2 (https=)
KR (1) KR20220075230A (https=)
CN (1) CN114450388B (https=)
TW (1) TWI910116B (https=)
WO (1) WO2021061922A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020195343A1 (ja) * 2019-03-26 2020-10-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液
WO2021126340A1 (en) * 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
CN114999911A (zh) * 2022-05-24 2022-09-02 长鑫存储技术有限公司 半导体结构及其形成方法
JP2024094844A (ja) * 2022-12-28 2024-07-10 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5994046A (en) * 1996-06-14 1999-11-30 Fuji Photo Film Co., Ltd. Silver halide color photographic light-sensitive material and method of forming color image using the same
AU6530000A (en) * 1999-08-19 2001-03-19 Ashland Inc. Stripping and cleaning compositions
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR100366974B1 (ko) * 1999-12-30 2003-01-14 유니켐스 (주) 드라이필름용 박리액 조성물 및 이를 이용한 드라이필름의박리방법
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
US20090111965A1 (en) * 2007-10-29 2009-04-30 Wai Mun Lee Novel nitrile and amidoxime compounds and methods of preparation
US20090133716A1 (en) * 2007-10-29 2009-05-28 Wai Mun Lee Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions
CN101597548A (zh) * 2008-06-06 2009-12-09 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8889609B2 (en) 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR101459725B1 (ko) * 2014-02-18 2014-11-12 주식회사 코원이노텍 포스트-에칭 포토레지스트 에칭 중합체 및 잔류물을 제거하기 위한 스트리퍼 조성물
JP6501492B2 (ja) * 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および/またはポリマー残渣を除去するための組成物
WO2016076034A1 (ja) * 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
US10647950B2 (en) * 2015-03-31 2020-05-12 Versum Materials Us, Llc Cleaning formulations
TWI790196B (zh) * 2015-12-11 2023-01-21 日商富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

Similar Documents

Publication Publication Date Title
TWI281944B (en) Microelectronic cleaning compositions containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
TWI426362B (zh) 用於製造液晶顯示器(lcd)之光阻剝離組合物
DE60108774T2 (de) Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten
ES2282453T3 (es) Composicion de limpieza alcalina sin amoniaco que presentan una mejor compatibilidad con substratos destinados a elementos microelectronicos.
JP4633785B2 (ja) ナノエレクトロニクスおよびマイクロエレクトロニクスの洗浄組成物
TWI454573B (zh) 清潔配方及該清潔配方的使用方法
JP2016040382A5 (https=)
TWI241336B (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
CN1993457B (zh) 微电子衬底的清洗组合物
ZA200603387B (en) Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
CN111763573A (zh) 一种碱性玻璃基板清洗液组合物
TW200300795A (en) Formulations including a 1, 3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
CN101013273A (zh) 清洁制剂
CN106547178A (zh) 清洁制剂
TW200934865A (en) Formulations for cleaning memory device structures
JP6033314B2 (ja) 銅/アゾールポリマー阻害剤を含むマイクロ電子基板洗浄組成物
JP2007504323A5 (https=)
JP2009141310A (ja) アルファ−ヒドロキシカルボニル化合物/アミンまたはアンモニア反応の結合体のオリゴマー型またはポリマー型物質を含有するフッ化物含有フォトレジスト剥離剤または残渣除去洗浄組成物
CN105556392B (zh) 用于除去光致抗蚀剂的剥离剂组合物和使用其剥离光致抗蚀剂的方法
CN102399651A (zh) 具有改进的基板相容性的无氨碱性微电子清洗组合物
CN113430070A (zh) 一种CoWP兼容性的半水基清洗液、其制备方法及应用
JPWO2021061922A5 (https=)
CN101685273B (zh) 一种去除光阻层残留物的清洗液
CN106468861B (zh) 抗蚀剂剥离液组合物及使用其的抗蚀剂剥离方法
JP2009141311A (ja) アルファ−ヒドロキシカルボニル化合物/アミンまたはアンモニア反応の結合体のオリゴマー型またはポリマー型物質を含有するフッ化物不含フォトレジスト剥離剤または残渣除去洗浄組成物