JPWO2021035132A5 - - Google Patents

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JPWO2021035132A5
JPWO2021035132A5 JP2022509590A JP2022509590A JPWO2021035132A5 JP WO2021035132 A5 JPWO2021035132 A5 JP WO2021035132A5 JP 2022509590 A JP2022509590 A JP 2022509590A JP 2022509590 A JP2022509590 A JP 2022509590A JP WO2021035132 A5 JPWO2021035132 A5 JP WO2021035132A5
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JP7562637B2 (ja
JP2022544673A5 (https=
JP2022544673A (ja
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JP2022509590A 2019-08-22 2020-08-21 マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス Active JP7562637B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962890285P 2019-08-22 2019-08-22
US62/890,285 2019-08-22
US201962909781P 2019-10-03 2019-10-03
US62/909,781 2019-10-03
PCT/US2020/047370 WO2021035132A1 (en) 2019-08-22 2020-08-21 Multi-state rf pulsing to control mask shape and breaking selectivity versus process margin trade-off

Publications (4)

Publication Number Publication Date
JP2022544673A JP2022544673A (ja) 2022-10-20
JP2022544673A5 JP2022544673A5 (https=) 2023-08-04
JPWO2021035132A5 true JPWO2021035132A5 (https=) 2023-08-04
JP7562637B2 JP7562637B2 (ja) 2024-10-07

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JP2022509590A Active JP7562637B2 (ja) 2019-08-22 2020-08-21 マスク形状を制御し、選択性対プロセスマージンのトレードオフを破壊するためのマルチステートｒｆパルス

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US (2) US12322571B2 (https=)
JP (1) JP7562637B2 (https=)
KR (1) KR20220044845A (https=)
CN (1) CN114342049B (https=)
WO (1) WO2021035132A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch
US20240242935A1 (en) * 2021-09-09 2024-07-18 Lam Research Corporation Multi-state rf pulsing in cycling recipes to reduce charging induced defects
US11987879B2 (en) * 2022-02-16 2024-05-21 Applied Materials, Inc. High aspect ratio taper improvement using directional deposition
KR102916927B1 (ko) * 2022-04-13 2026-01-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 디바이스

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP5172417B2 (ja) * 2008-03-27 2013-03-27 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5395491B2 (ja) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8987140B2 (en) * 2011-04-25 2015-03-24 Applied Materials, Inc. Methods for etching through-silicon vias with tunable profile angles
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
CN103915308B (zh) * 2012-12-31 2016-06-29 中微半导体设备(上海)有限公司 一种双射频脉冲等离子体的刻蚀方法及其刻蚀装置
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9754767B2 (en) * 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
US11545364B2 (en) * 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch

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