JPWO2019226957A5 - - Google Patents
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- Publication number
- JPWO2019226957A5 JPWO2019226957A5 JP2020565305A JP2020565305A JPWO2019226957A5 JP WO2019226957 A5 JPWO2019226957 A5 JP WO2019226957A5 JP 2020565305 A JP2020565305 A JP 2020565305A JP 2020565305 A JP2020565305 A JP 2020565305A JP WO2019226957 A5 JPWO2019226957 A5 JP WO2019226957A5
- Authority
- JP
- Japan
- Prior art keywords
- zone
- main
- gases
- gas
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 55
- 239000000758 substrate Substances 0.000 claims 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 10
- 235000012431 wafers Nutrition 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862676173P | 2018-05-24 | 2018-05-24 | |
| US62/676,173 | 2018-05-24 | ||
| PCT/US2019/033853 WO2019226957A1 (en) | 2018-05-24 | 2019-05-23 | Multiple zone gas injection for control of gas phase radicals |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021525453A JP2021525453A (ja) | 2021-09-24 |
| JP2021525453A5 JP2021525453A5 (https=) | 2022-05-18 |
| JPWO2019226957A5 true JPWO2019226957A5 (https=) | 2022-05-18 |
| JP7205021B2 JP7205021B2 (ja) | 2023-01-17 |
Family
ID=68615246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020565305A Active JP7205021B2 (ja) | 2018-05-24 | 2019-05-23 | 気相ラジカルの制御のための複数ゾーンガス噴射 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11274370B2 (https=) |
| JP (1) | JP7205021B2 (https=) |
| KR (1) | KR102424808B1 (https=) |
| CN (1) | CN112204167B (https=) |
| TW (1) | TWI784167B (https=) |
| WO (1) | WO2019226957A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020123076A1 (de) | 2020-09-03 | 2022-03-03 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors mit zwei Einspeisestellen |
| FI129868B (en) | 2021-03-30 | 2022-10-14 | Beneq Oy | A gas feeding cup and a gas manifold assembly |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050241579A1 (en) * | 2004-04-30 | 2005-11-03 | Russell Kidd | Face shield to improve uniformity of blanket CVD processes |
| US7972441B2 (en) * | 2005-04-05 | 2011-07-05 | Applied Materials, Inc. | Thermal oxidation of silicon using ozone |
| US7326655B2 (en) * | 2005-09-29 | 2008-02-05 | Tokyo Electron Limited | Method of forming an oxide layer |
| KR20080013568A (ko) * | 2006-08-09 | 2008-02-13 | 주식회사 아이피에스 | 다중소스 분사 샤워헤드 |
| US20090035463A1 (en) * | 2007-08-03 | 2009-02-05 | Tokyo Electron Limited | Thermal processing system and method for forming an oxide layer on substrates |
| US20090291209A1 (en) * | 2008-05-20 | 2009-11-26 | Asm International N.V. | Apparatus and method for high-throughput atomic layer deposition |
| JP5088284B2 (ja) * | 2008-09-30 | 2012-12-05 | 東京エレクトロン株式会社 | 真空処理装置 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US8551248B2 (en) | 2010-04-19 | 2013-10-08 | Texas Instruments Incorporated | Showerhead for CVD depositions |
| US9175391B2 (en) | 2011-05-26 | 2015-11-03 | Intermolecular, Inc. | Apparatus and method for combinatorial gas distribution through a multi-zoned showerhead |
| JP6225842B2 (ja) * | 2014-06-16 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
| EP3207558B1 (en) * | 2014-10-17 | 2022-08-03 | Lam Research Corporation | Gas supply delivery arrangement including a gas splitter for tunable gas flow control and method using said gas supply delivery arrangement |
| US9966270B2 (en) * | 2015-03-31 | 2018-05-08 | Lam Research Corporation | Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity |
| JP6573559B2 (ja) * | 2016-03-03 | 2019-09-11 | 東京エレクトロン株式会社 | 気化原料供給装置及びこれを用いた基板処理装置 |
| US10269600B2 (en) * | 2016-03-15 | 2019-04-23 | Applied Materials, Inc. | Methods and assemblies for gas flow ratio control |
| JP6690496B2 (ja) * | 2016-03-17 | 2020-04-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US10577690B2 (en) * | 2016-05-20 | 2020-03-03 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
| US10304668B2 (en) * | 2016-05-24 | 2019-05-28 | Tokyo Electron Limited | Localized process control using a plasma system |
| US9738977B1 (en) * | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
| JP6747220B2 (ja) * | 2016-09-28 | 2020-08-26 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP6767844B2 (ja) * | 2016-11-11 | 2020-10-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| KR20180053491A (ko) * | 2016-11-11 | 2018-05-23 | 삼성전자주식회사 | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
-
2019
- 2019-05-23 JP JP2020565305A patent/JP7205021B2/ja active Active
- 2019-05-23 CN CN201980034497.XA patent/CN112204167B/zh active Active
- 2019-05-23 KR KR1020207036372A patent/KR102424808B1/ko active Active
- 2019-05-23 US US16/421,358 patent/US11274370B2/en active Active
- 2019-05-23 WO PCT/US2019/033853 patent/WO2019226957A1/en not_active Ceased
- 2019-05-24 TW TW108117992A patent/TWI784167B/zh active
-
2021
- 2021-12-10 US US17/547,521 patent/US11781220B2/en active Active
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