JPWO2019030615A1 - 表示装置 - Google Patents
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- JPWO2019030615A1 JPWO2019030615A1 JP2019536001A JP2019536001A JPWO2019030615A1 JP WO2019030615 A1 JPWO2019030615 A1 JP WO2019030615A1 JP 2019536001 A JP2019536001 A JP 2019536001A JP 2019536001 A JP2019536001 A JP 2019536001A JP WO2019030615 A1 JPWO2019030615 A1 JP WO2019030615A1
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Abstract
Description
本実施の形態では、本発明の一態様の表示装置100の構成例について、図面を用いて説明する。
図1(A)は表示装置100のブロック図を示す図である。図1(B)は表示装置100の概観図を示す図である。
次いで図2で図示した画像処理装置110の動作例について説明する。
図7にアップコンバートを行なうためのアルゴリズムの一例を示す。図7では、各アルゴリズムをグループA、B、またはCに分類している。グループAはアップコンバートを単純計算で行なうアルゴリズムであり、グループBはアップコンバートを機械学習で行なうアルゴリズムであり、グループCはアップコンバートを、ニューラルネットワークを用いた深層学習で行なうアルゴリズムである。
ニューラルネットワーク回路118の構成例について説明する。ニューラルネットワーク回路118では、入力される対象ブロックデータDTBINに対応する対象ブロックデータDTBOUTが出力できるよう予め重み係数(重みデータ)を学習によって更新しておく構成が好ましい。
以上説明した本発明の一態様によれば、画像データに均一に高品質な画像となるアップコンバートのアルゴリズムを適用するのではなく、対象ブロックを含む画像データ毎にアップコンバートに用いるアルゴリズムを変える構成とすることができる。そのため、本発明の一態様の表示装置は、表示品位の向上を図るともに、画像データのアップコンバートの処理時間を短縮することができる。
また本発明の一態様によれば、アップコンバートのアルゴリズムを適用する際の演算量を減らすことができるため、低消費電力化を図ることができる。
本実施の形態では、表示素子として液晶素子を用いた表示部130の構成例と、表示素子としてEL素子を用いた表示部130の構成例について説明する。図9(A)において、第1の基板4001上に設けられた画素部131を囲むようにして、シール材4005が設けられ、画素部131がシール材4005および第2の基板4006によって封止されている。
本実施の形態では、本発明の一態様の表示部130などに用いることができるトランジスタの一例について、図面を用いて説明する。
図11(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ310の断面図である。図11(A1)において、トランジスタ310は基板371上に形成されている。また、トランジスタ310は、基板371上に絶縁層372を介して電極322を有する。また、電極322上に絶縁層326を介して半導体層324を有する。電極322はゲート電極として機能できる。絶縁層326はゲート絶縁層として機能できる。
図12(A1)に、トップゲート型のトランジスタの一種であるトランジスタ330の断面図を示す。トランジスタ330は、絶縁層372の上に半導体層324を有し、半導体層324および絶縁層372上に、半導体層324の一部に接する電極344a、および半導体層324の一部に接する電極344bを有し、半導体層324、電極344a、および電極344b上に絶縁層326を有し、絶縁層326上に電極322を有する。
基板に用いる材料に大きな制限はない。目的に応じて、透光性の有無や加熱処理に耐えうる程度の耐熱性などを勘案して決定すればよい。例えばバリウムホウケイ酸ガラスやアルミノホウケイ酸ガラスなどのガラス基板、セラミック基板、石英基板、サファイア基板などを用いることができる。また、半導体基板、可撓性基板(フレキシブル基板)、貼り合わせフィルム、基材フィルムなどを用いてもよい。
トランジスタのゲート、ソースおよびドレインのほか、表示装置を構成する各種配線および電極などの導電層に用いることのできる導電性材料としては、アルミニウム(Al)、クロム(Cr)、銅(Cu)、銀(Ag)、金(Au)、白金(Pt)、タンタル(Ta)、ニッケル(Ni)、チタン(Ti)、モリブデン(Mo)、タングステン(W)、ハフニウム(Hf)、バナジウム(V)、ニオブ(Nb)、マンガン(Mn)、マグネシウム(Mg)、ジルコニウム(Zr)、ベリリウム(Be)等から選ばれた金属元素、上述した金属元素を成分とする合金、または上述した金属元素を組み合わせた合金などを用いることができる。また、リン等の不純物元素を含有させた多結晶シリコンに代表される半導体、ニッケルシリサイドなどのシリサイドを用いてもよい。導電性材料の形成方法は特に限定されず、蒸着法、CVD法、スパッタリング法、スピンコート法などの各種形成方法を用いることができる。
各絶縁層は、窒化アルミニウム、酸化アルミニウム、窒化酸化アルミニウム、酸化窒化アルミニウム、酸化マグネシウム、窒化シリコン、酸化シリコン、窒化酸化シリコン、酸化窒化シリコン、酸化ガリウム、酸化ゲルマニウム、酸化イットリウム、酸化ジルコニウム、酸化ランタン、酸化ネオジム、酸化ハフニウム、酸化タンタル、アルミニウムシリケートなどから選ばれた材料を、単層でまたは積層して用いる。また、酸化物材料、窒化物材料、酸化窒化物材料、窒化酸化物材料のうち、複数の材料を混合した材料を用いてもよい。
トランジスタの半導体層に用いる半導体材料としては、非晶質半導体、結晶性を有する半導体(微結晶半導体、多結晶半導体、単結晶半導体、または一部に結晶領域を有する半導体)のいずれを用いてもよい。
絶縁層、半導体層、電極や配線を形成するための導電層などは、スパッタリング法、化学気相堆積(CVD:Chemical Vapor Deposition)法、真空蒸着法、パルスレーザ堆積(PLD:Pulsed Laser Deposition)法、原子層成膜(ALD:Atomic Layer Deposition)法などを用いて形成することができる。CVD法としては、プラズマ化学気相堆積(PECVD)法や、熱CVD法でもよい。熱CVD法の例として、有機金属化学気相堆積(MOCVD:Metal Organic CVD)法を用いてもよい。
本発明の一態様は、表示部を有する様々な電子機器に用いることができる。本発明の一態様を用いることができる電子機器として、テレビ、モニタ等の表示装置、デスクトップ型或いはノート型のパーソナルコンピュータ、ワードプロセッサ、DVD(Digital Versatile Disc)などの記録媒体に記憶された静止画又は動画を再生する画像再生装置、携帯型ゲーム機、タブレット型端末、パチンコ機などの大型ゲーム機、携帯情報端末、電子手帳、電子書籍端末、ビデオカメラ、デジタルスチルカメラなどが挙げられる。
Claims (9)
- 第1の画像データが入力される画像分析部と、
前記第1の画像データを複数に分割する画像分割部と、
それぞれ異なる超解像処理を行う複数の超解像処理回路を有し、前記超解像処理回路ごとに分割された前記第1の画像データが入力され、複数の第2の画像データを生成する画像演算処理部と、を有し、
前記画像分析部は、
前記第1の画像データをもとに表示される画像内の対象ブロックの情報を取得する機能と、
前記対象ブロック毎に前記画像分割部における前記第1の画像データの分割を制御する機能と、
分割された前記第1の画像データのいずれか一の、複数の前記超解像処理回路のいずれか一への入力を制御する機能と、を有することを特徴とする表示装置。 - 第1の画像データが入力される画像分析部と、
前記第1の画像データを複数に分割する画像分割部と、
それぞれ異なる超解像処理を行う複数の超解像処理回路を有し、前記超解像処理回路ごとに分割された前記第1の画像データが入力され、複数の第2の画像データを生成する画像演算処理部と、を有し、
前記画像分析部は、
前記第1の画像データの動きベクトルをもとに表示される画像内の対象ブロックの情報を取得する機能と、
前記対象ブロック毎に前記画像分割部における前記第1の画像データの分割を制御する機能と、
分割された前記第1の画像データのいずれか一の、複数の前記超解像処理回路のいずれか一への入力を制御する機能と、を有することを特徴とする表示装置。 - 請求項1または請求項2において、
前記画像分析部は、
学習済みの重みパラメータを記憶したニューラルネットワーク回路を有し、
前記ニューラルネットワーク回路は、前記対象ブロックの情報を入力データとして前記対象ブロックを含む分割された前記第1の画像データを入力する前記超解像処理回路を選択する信号を出力データとして出力する機能を有することを特徴とする表示装置。 - 請求項1乃至請求項3のいずれか一項において、
前記超解像処理回路は、
Nearest neighbor法、Bilinear法、Bicubic法、Lanczos法、RAISR法、ANR法、A+法、またはSRCNN法のいずれか一を用いて、前記第2の画像データを生成する機能を有することを特徴とする表示装置。 - 請求項1乃至請求項4のいずれか一において、
前記表示装置は、
複数の前記第2の画像データを合成することで第3の画像データを生成する画像合成部と、
前記第3の画像データをもとに画像を表示する表示部と、を有し、
前記表示部は、表示素子およびトランジスタを有する画素を有し、
前記表示素子は、液晶素子または発光素子であることを特徴とする表示装置。 - 請求項5において、
前記トランジスタはボトムゲート型のトランジスタであることを特徴とする表示装置。 - 請求項5または請求項6において、
前記トランジスタの半導体層は、非晶質シリコンを含むことを特徴とする表示装置。 - 請求項5乃至請求項7のいずれか一項において、
行方向に7600個以上の前記画素が前記表示部に配置され、列方向に4300個以上の前記画素が前記表示部に配置されることを特徴とする表示装置。 - 請求項5乃至請求項8のいずれか一において、
前記表示部は対角60インチ以上であることを特徴とする表示装置。
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