JPWO2018212195A1 - 半導体光素子 - Google Patents
半導体光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 230000003287 optical effect Effects 0.000 title claims abstract description 123
- 239000010410 layer Substances 0.000 claims abstract description 250
- 238000005253 cladding Methods 0.000 claims abstract description 107
- 239000012792 core layer Substances 0.000 claims abstract description 102
- 239000000463 material Substances 0.000 claims abstract description 69
- 230000017525 heat dissipation Effects 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 33
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 33
- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 49
- 230000000052 comparative effect Effects 0.000 description 39
- 229910004298 SiO 2 Inorganic materials 0.000 description 33
- 239000011162 core material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- -1 Fe-doped InP Substances 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
Description
化合物半導体からなる活性領域を含む第1コア層と、
前記第1コア層を挟持するp型半導体からなる第1クラッド層およびn型半導体からなる第2クラッド層と、
第3クラッド層を含む半導体光素子において、
前記第3クラッド層が、
熱伝導率が前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより大きく、
屈折率が前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより小さく、
バンドギャップが前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより大きい材料を含んで構成されたことを特徴とする。
ことを特徴とする。
の関係を満たすことを特徴とする。
前記第1コア層に対する注入電流の方向が前記第3クラッド層の面に沿って略平行な方向であることを特徴とする。
前記第1コア層に対する注入電流の方向が前記第3クラッド層の面に垂直な方向であることを特徴とする。
図2は、本発明の実施例1の半導体光素子の構造を示す斜視図である。本発明の実施例1は、図2のように活性層1を挟んでクラッド層5から6へ、基板面に沿って略平行に電流を注入する半導体レーザ構造である。
半導体光素子を構成する異種材料間の熱膨張係数差により、製造工程の昇温プロセスにおいて熱応力が発生して、半導体光素子内へ欠陥が生じる問題について検討する。
図11に示す本発明の実施例2の構造では、活性層1、光半導体層2及びp型、n型半導体クラッド層5,6を含む上部構造とSiC基板4との間に、薄い絶縁膜であるSiO2層111を形成し、SiC基板4とSiO2層111からなる2層構造の下部クラッド(第3クラッド層)とした点において、実施例1と相違する。SiO2層111のような絶縁膜は、ある種の基板接合方法において接合界面でのボイド発生を抑制するために重要とされている。
図14は、本発明の実施例3の半導体光素子の断面構造図である。図15は、実施例3に対する比較例2として示す、従来用いられていた半導体光素子の断面構造図である。
図18には、本発明の実施例4の断面構造図を示す。本実施例4は、実施例3と同様に、第3クラッド層の中に第1のコア層と光学的にカップリングする第2のコア層を有するが、第1のコア層に対する注入電流の方向が第3クラッド層の面に略平行な方向になる点が実施例3と異なる。
図19には、本発明の実施例5の断面構造図を示す。本実施例5では、第1のコア層に対する注入電流の方向が、図14の実施例3と同様に基板面に略垂直な方向であるが、第3クラッド層は図11の実施例2と同様な2層構造で、第2のコアは無い構造である。
2 光半導体層(i−InP層)
3 上部クラッド層
4 下部クラッド層(第3クラッド層、SiC基板)
5 p型半導体層(第1クラッド層)
6 n型半導体層(第2クラッド層)
5a、6a コンタクト層及び電極
7 支持構造層
41 Si層(基板)
42、111 SiO2層
141 Siリブ導波路(光導波路コア層)
Claims (10)
- 化合物半導体からなる活性領域を含む第1コア層と、
前記第1コア層を挟持するp型半導体からなる第1クラッド層およびn型半導体からなる第2クラッド層と、
第3クラッド層とを含む半導体光素子において、
前記第3クラッド層が、
熱伝導率が前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより大きく、
屈折率が前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより小さく、
バンドギャップが前記第1コア層、前記第1クラッド層および前記第2クラッド層のいずれより大きい材料を含んで構成された
ことを特徴とする半導体光素子。 - 請求項1に記載の半導体光素子において、
前記第3クラッド層が、1種類の材料で構成された、
ことを特徴とする半導体光素子。 - 請求項1または2に記載の半導体光素子において、
前記第3クラッド層を構成する材料が、SiC(炭化ケイ素)、GaN(窒化ガリウム),C(ダイアモンド)、AlN(窒化アルミニウム)、BN(窒化ホウ素)の少なくとも一つを含む、
ことを特徴とする半導体光素子。 - 請求項1に記載の半導体光素子において、
前記第3クラッド層が、異なる2種類の材料で構成された、
ことを特徴とする半導体光素子。 - 請求項5に記載の半導体光素子において、
前記第3クラッド層を構成する前記2種類の材料の、一方が熱伝導率が大きい半導体であり、他方が屈折率が小さくバンドギャップが大きい絶縁材料である、
ことを特徴とする半導体光素子。 - 請求項6に記載の半導体光素子において、
前記絶縁材料の層の厚みが、光をコアに閉じ込めるが放熱効果は得られる程度に規定されている
ことを特徴とする半導体光素子。 - 請求項1から7のいずれか1項に記載の半導体光素子において、
前記第3クラッド層の中に第2コア層が挿入されており、前記第1コア層と前記第2コア層が光学的にカップリングしている
ことを特徴とする半導体光素子。 - 請求項1から8のいずれか1項に記載の半導体光素子において、
前記第1クラッド層、前記第1コア層、前記第2クラッド層が前記第3クラッド層の面に沿って配置されており、
前記第1コア層に対する注入電流の方向が前記第3クラッド層の面に沿って略平行な方向である
ことを特徴とする半導体光素子。 - 請求項1から8のいずれか1項に記載の半導体光素子において、
前記第1クラッド層、前記第1コア層、前記第2クラッド層が前記第3クラッド層の面に垂直に配置されており、
前記第1コア層に対する注入電流の方向が前記第3クラッド層の面に垂直な方向である
ことを特徴とする半導体光素子。
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PCT/JP2018/018798 WO2018212195A1 (ja) | 2017-05-15 | 2018-05-15 | 半導体光素子 |
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---|
TAKURO FUJII, ET AL.: "Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricati", IET OPTOELECTRON. 2015, vol. vol.9, Iss.4, JPN6020025445, pages 151 - 157, ISSN: 0004305416 * |
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