JPWO2016128860A1 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JPWO2016128860A1 JPWO2016128860A1 JP2016574520A JP2016574520A JPWO2016128860A1 JP WO2016128860 A1 JPWO2016128860 A1 JP WO2016128860A1 JP 2016574520 A JP2016574520 A JP 2016574520A JP 2016574520 A JP2016574520 A JP 2016574520A JP WO2016128860 A1 JPWO2016128860 A1 JP WO2016128860A1
- Authority
- JP
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- Prior art keywords
- film
- electrode
- oxide semiconductor
- semiconductor film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims abstract description 456
- 239000003990 capacitor Substances 0.000 claims description 100
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- 239000000203 mixture Substances 0.000 claims description 26
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Chemical group 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
Description
本実施の形態では、液晶表示装置の一画素の構成について、図1乃至図9を用いて説明する。
以下より、液晶表示装置において、上述の画素100と異なる構造を有する一画素の構成について、図7乃至図9を用いて説明する。
(実施の形態2)
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図10乃至図18を参照して説明する。
図14(C)は、本発明の一態様の半導体装置であるトランジスタ500の上面図であり、図14(B)は、図14(C)に示す一点鎖線X1−X2間における切断面の断面図、及び一点鎖線Y1−Y2間における切断面の断面図に相当する。また、図10(A)乃至図14(A)は、図14(B)に示すトランジスタ500の作製工程を説明する断面図である。
基板502の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板502として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板502として用いてもよい。なお、基板502として、ガラス基板を用いる場合、第6世代、第7世代、第8世代、第9世代、第10世代等の大面積基板を用いることで、大型の表示装置を作製することができる。このような大面積基板を用いることで製造コストを低減させることができるため好ましい。
ゲート電極として機能する導電膜504、及びソース電極として機能する導電膜512a、及びドレイン電極として機能する導電膜512bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ500のゲート絶縁膜として機能する絶縁膜506及び絶縁膜507としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜及び酸化ネオジム膜を一種以上含む絶縁膜を、それぞれ用いることができる。なお、絶縁膜506及び絶縁膜507の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜508としては、先に示す材料を用いることができる。酸化物半導体膜508がIn−M−Zn酸化物の場合、In−M−Zn酸化物を成膜するために用いるスパッタリングターゲットの金属元素の原子数比は、In≧M、Zn≧Mを満たすことが好ましい。このようなスパッタリングターゲットの金属元素の原子数比として、In:M:Zn=1:1:1、In:M:Zn=1:1:1.2、In:M:Zn=2:1:3、In:M:Zn=3:1:2、In:M:Zn=4:2:4.1が好ましい。また、酸化物半導体膜508がIn−M−Zn酸化物の場合、スパッタリングターゲットとしては、多結晶のIn−M−Zn酸化物を含むターゲットを用いると好ましい。多結晶のIn−M−Zn酸化物を含むターゲットを用いることで、結晶性を有する酸化物半導体膜508を形成しやすくなる。なお、成膜される酸化物半導体膜508の原子数比はそれぞれ、誤差として上記のスパッタリングターゲットに含まれる金属元素の原子数比のプラスマイナス40%の変動を含む。例えば、スパッタリングターゲットとして、原子数比がIn:Ga:Zn=4:2:4.1を用いる場合、成膜される酸化物半導体膜508の原子数比は、In:Ga:Zn=4:2:3近傍となる場合がある。
絶縁膜514、516は、酸化物半導体膜508に酸素を供給する機能を有する。また、絶縁膜518は、トランジスタ500の保護絶縁膜としての機能を有する。また、絶縁膜514、516は、酸素を有する。また、絶縁膜514は、酸素を透過することのできる絶縁膜である。なお、絶縁膜514は、後に形成する絶縁膜516を形成する際の、酸化物半導体膜508へのダメージ緩和膜としても機能する。
次に、図14(B)(C)に示すトランジスタ500と異なる構成例について、図16(A)(B)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、本発明の一態様の半導体装置であるトランジスタ500の作製方法について、図10(A)(B)(C)乃至図14(A)を用いて詳細に説明する。なお、図10(A)(B)(C)乃至図14(A)は、半導体装置の作製方法を説明する断面図である。
次に、図10(A)(B)(C)乃至図14(A)に示すトランジスタ500の作製方法と、異なる作製方法について、以下説明する。
次に、本発明の一態様であるトランジスタ570の作製方法について、図17(A)(B)(C)を用いて詳細に説明する。なお、図17(A)(B)(C)は、半導体装置の作製方法を説明する断面図である。
(実施の形態3)
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体の構造について、詳細に説明を行う。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体とに分けられる。非単結晶酸化物半導体としては、CAAC−OS(C Axis Aligned
Crystalline Oxide Semiconductor)、多結晶酸化物半導体、nc−OS(nanocrystalline Oxide Semiconductor)、擬似非晶質酸化物半導体(a−like OS:amorphous like Oxide Semiconductor)、非晶質酸化物半導体などがある。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
crystal size)を調査した例である。ただし、上述した格子縞の長さを結晶部の大きさとしている。図23より、a−like OSは、電子の累積照射量(Cumulative electron dose)に応じて結晶部が大きくなっていくことがわかる。具体的には、図23中に(1)で示すように、TEMによる観察初期においては1.2nm程度の大きさだった結晶部(初期核ともいう。)が、累積照射量が4.2×108e−/nm2においては2.6nm程度の大きさまで成長していることがわかる。一方、nc−OSおよびCAAC−OSは、電子照射開始時から電子の累積照射量が4.2×108e−/nm2までの範囲で、結晶部の大きさに変化が見られないことがわかる。具体的には、図23中の(2)および(3)で示すように、電子の累積照射量によらず、nc−OSおよびCAAC−OSの結晶部の大きさは、それぞれ1.4nm程度および2.1nm程度であることがわかる。
本実施の形態においては、先の実施の形態で例示したトランジスタを有する表示装置の一例について、図24乃至図26を用いて以下説明を行う。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図27及び図28を用いて説明を行う。
101 基板
103 走査線
105a 容量配線
105b 容量配線
107 ゲート絶縁膜
107a ゲート絶縁膜
107b ゲート絶縁膜
114 絶縁膜
116 絶縁膜
116a 絶縁膜
116b 絶縁膜
116c 絶縁膜
121 信号線
123 電極
125a 電極
125b 電極
135 半導体膜
135a 酸化物半導体膜
135b 酸化物半導体膜
136 トランジスタ
137 トランジスタ
139a 画素電極
139b 画素電極
140 容量素子
141 容量素子
142 液晶素子
143 液晶素子
144a 開口
144b 開口
145 容量素子
146 容量素子
148 画素電極
148a 酸化物導電体膜
148b 酸化物導電体膜
149 画素電極
200 画素
203 走査線
221 信号線
223a 電極
223b 電極
236 トランジスタ
237 トランジスタ
300 画素
301 基板
303 走査線
305a 容量配線
305b 容量配線
307 ゲート絶縁膜
316 絶縁膜
321 信号線
323a 電極
323b 電極
325a 電極
325b 電極
335 半導体膜
336 トランジスタ
337 トランジスタ
339a 画素電極
339b 画素電極
340 容量素子
341 容量素子
342 液晶素子
343 液晶素子
344a 開口
344b 開口
345a 電極
345b 電極
346a 開口
346b 開口
500 トランジスタ
502 基板
504 導電膜
506 絶縁膜
507 絶縁膜
508 酸化物半導体膜
508a 酸化物半導体膜
508b 酸化物半導体膜
509 酸化物半導体膜
509a 酸化物半導体膜
509b 酸化物半導体膜
512 導電膜
512a 導電膜
512b 導電膜
514 絶縁膜
516 絶縁膜
518 絶縁膜
519 絶縁膜
520 導電膜
520a 導電膜
520b 導電膜
531 バリア膜
536a マスク
536b マスク
538 エッチャント
539 エッチャント
540 酸素
540a 酸素
542 エッチャント
542a 開口部
542b 開口部
542c 開口部
570 トランジスタ
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 配線
711 配線部
712 シール材
716 FPC
725 スリット
734 絶縁膜
736 着色層
736B 着色層
736G 着色層
736R 着色層
738 遮光膜
744 突起
746 配向膜
748 配向膜
750 トランジスタ
752 トランジスタ
760 接続電極
764 絶縁膜
766 絶縁膜
768 絶縁膜
770 平坦化絶縁膜
772 導電膜
774 導電膜
775 液晶素子
776 液晶層
778 構造体
780 異方性導電膜
790 容量素子
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5100 ペレット
5120 基板
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (6)
- 信号線と、走査線と、第1の電極と、第2の電極と、第3の電極と、第1の画素電極と、第2の画素電極と、半導体膜と、を有し、
前記信号線は、前記走査線と交差し、
前記第1の電極は、前記信号線と電気的に接続され、
前記第1の電極は、前記走査線と重畳する領域を有し、
前記第2の電極は、前記第1の電極に対向し、
前記第3の電極は、前記第1の電極に対向し、
前記第1の画素電極は、前記第2の電極と電気的に接続され、
前記第2の画素電極は、前記第3の電極と電気的に接続され、
前記半導体膜は、前記第1の電極、前記第2の電極及び前記第3の電極と接し、
前記半導体膜は、前記走査線と、前記第1の電極乃至前記第3の電極との間に設けられる、表示装置。 - ゲート絶縁膜と、第1のトランジスタと、第2のトランジスタと、を有し、
前記ゲート絶縁膜は、前記走査線及び前記半導体膜の間に配設され、
前記第1のトランジスタは、前記走査線、前記ゲート絶縁膜、前記半導体膜、前記第1の電極、及び前記第2の電極を備え、
前記第2のトランジスタは、前記走査線、前記ゲート絶縁膜、前記半導体膜、前記第1の電極、及び前記第3の電極を備える、
請求項1に記載の表示装置。 - 第1の容量配線と、第2の容量配線と、を有し、
前記第1の容量配線は、前記第1の画素電極と電気的に接続され、
前記第2の容量配線は、前記第2の画素電極と電気的に接続され、
前記信号線は、前記第1の画素電極及び前記第2の画素電極の間と重なる領域を備え、
前記信号線は、前記第1の容量配線及び前記第2の容量配線と重なる領域を有さない、
請求項1に記載の表示装置。 - 前記第1の電極が、上面形状において、前記第2の電極及び前記第3の電極の間に設けられる、
請求項3に記載の表示装置。 - 前記半導体膜は、In、M(Mはアルミニウム、ガリウム、イットリウムまたはスズ)及びZnを有する酸化物を含む、
請求項1に記載の表示装置。 - 前記半導体膜は、第1の半導体膜と、前記第1の半導体膜と重なる領域を備える第2の半導体膜と、を含み、
前記第1の半導体膜は、前記第2の半導体膜よりも、Inの原子数比がMの原子数比よりも多い組成の酸化物を含む、
請求項5に記載の表示装置。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007097074A1 (ja) * | 2006-02-24 | 2007-08-30 | Sharp Kabushiki Kaisha | アクティブマトリクス基板、表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、ゲート絶縁膜形成方法 |
US7542102B2 (en) * | 2006-11-10 | 2009-06-02 | Au Optronics Corporation | Pixel structures of color filter substrate, active device array substrate and liquid crystal display panel |
JP2012145927A (ja) * | 2010-12-20 | 2012-08-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2014199403A (ja) * | 2012-08-28 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
GB2212659A (en) | 1987-11-20 | 1989-07-26 | Philips Electronic Associated | Multi-level circuit cross-overs |
JPH04326329A (ja) * | 1991-04-26 | 1992-11-16 | Sharp Corp | 液晶表示装置およびその製造方法 |
JPH05341322A (ja) | 1992-06-12 | 1993-12-24 | Hitachi Ltd | 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置 |
KR19990001859A (ko) * | 1997-06-18 | 1999-01-15 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 |
JP3683463B2 (ja) | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
JP3796072B2 (ja) | 1999-08-04 | 2006-07-12 | シャープ株式会社 | 透過型液晶表示装置 |
TW478014B (en) | 1999-08-31 | 2002-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing thereof |
JP3695393B2 (ja) | 2000-03-21 | 2005-09-14 | 株式会社日立製作所 | 液晶表示装置 |
JP3918496B2 (ja) | 2001-10-22 | 2007-05-23 | 株式会社日立製作所 | 液晶表示装置及びその製造方法 |
JP4004835B2 (ja) | 2002-04-02 | 2007-11-07 | 株式会社アドバンスト・ディスプレイ | 薄膜トランジスタアレイ基板の製造方法 |
JP4248306B2 (ja) | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
KR100539833B1 (ko) * | 2002-10-21 | 2005-12-28 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
CN100483230C (zh) * | 2003-01-08 | 2009-04-29 | 友达光电股份有限公司 | 像素结构 |
CN2606376Y (zh) * | 2003-01-08 | 2004-03-10 | 广辉电子股份有限公司 | 像素结构 |
KR100916605B1 (ko) * | 2003-03-07 | 2009-09-14 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR100913303B1 (ko) | 2003-05-06 | 2009-08-26 | 삼성전자주식회사 | 액정표시장치 |
JP4265788B2 (ja) | 2003-12-05 | 2009-05-20 | シャープ株式会社 | 液晶表示装置 |
CN100504553C (zh) | 2004-02-06 | 2009-06-24 | 三星电子株式会社 | 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器 |
KR101039022B1 (ko) | 2004-02-11 | 2011-06-03 | 삼성전자주식회사 | 접촉부 및 그의 제조 방법, 박막 트랜지스터 표시판 및그의 제조방법 |
ES1057932Y (es) | 2004-07-01 | 2005-01-16 | Mecadetol Sa | Poste movil para cartolas de cajas de carga. |
WO2006064789A1 (ja) | 2004-12-14 | 2006-06-22 | Sharp Kabushiki Kaisha | 液晶表示装置および液晶表示装置の欠陥修正方法 |
KR20060073826A (ko) | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
JP2006184578A (ja) | 2004-12-27 | 2006-07-13 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
TW200642268A (en) | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
KR101216688B1 (ko) | 2005-05-02 | 2012-12-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 |
JP4703258B2 (ja) | 2005-05-16 | 2011-06-15 | シャープ株式会社 | 薄膜トランジスタ基板及び液晶表示パネル |
US7537976B2 (en) | 2005-05-20 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor |
JP2007097074A (ja) | 2005-09-30 | 2007-04-12 | Pentax Corp | 撮像素子用清掃器具 |
EP1777690B1 (en) | 2005-10-18 | 2012-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI283073B (en) | 2005-12-14 | 2007-06-21 | Au Optronics Corp | LCD device and fabricating method thereof |
KR101189279B1 (ko) | 2006-01-26 | 2012-10-09 | 삼성디스플레이 주식회사 | 표시장치와 이의 제조방법 |
GB2449403B (en) | 2006-03-15 | 2011-08-10 | Sharp Kk | Active matrix substrate, display apparatus and television receiver |
CN101101913B (zh) * | 2006-07-06 | 2010-10-13 | 中华映管股份有限公司 | 薄膜晶体管阵列 |
JP2008089646A (ja) | 2006-09-29 | 2008-04-17 | Sharp Corp | 表示装置 |
KR101309434B1 (ko) * | 2006-12-05 | 2013-09-23 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP5081444B2 (ja) | 2006-12-21 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | 表示装置 |
JP5052142B2 (ja) | 2007-01-16 | 2012-10-17 | 株式会社ジャパンディスプレイイースト | 表示装置 |
US8319906B2 (en) | 2007-02-09 | 2012-11-27 | Sharp Kabushiki Kaisha | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, active matrix substrate manufacturing method, and liquid crystal panel manufacturing method |
CN101281311A (zh) * | 2007-04-04 | 2008-10-08 | 中华映管股份有限公司 | 像素结构及其驱动方法 |
TWI361329B (en) | 2007-04-10 | 2012-04-01 | Au Optronics Corp | Array substrate and method for manufacturing the same |
TWI352866B (en) | 2007-04-12 | 2011-11-21 | Wintek Corp | Liquid crystal display and active matrix substrate |
CN101030588A (zh) * | 2007-04-24 | 2007-09-05 | 友达光电股份有限公司 | 阵列基板及其制造方法 |
JP5542296B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP5116359B2 (ja) | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
EP2159632A4 (en) | 2007-06-28 | 2011-08-10 | Sharp Kk | ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL SCREEN, LIQUID CRYSTAL DISPLAY UNIT, LIQUID CRYSTAL DISPLAY DEVICE, TELEVISION RECEIVER AND METHOD FOR PRODUCING A LIQUID CRYSTAL SCREEN |
US9176353B2 (en) * | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR101515081B1 (ko) | 2007-07-26 | 2015-05-06 | 삼성디스플레이 주식회사 | 표시장치 및 그 구동방법 |
CN201069506Y (zh) * | 2007-07-30 | 2008-06-04 | 上海广电光电子有限公司 | 液晶显示装置 |
EP2073255B1 (en) | 2007-12-21 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device comprising the diode |
JP2009180981A (ja) | 2008-01-31 | 2009-08-13 | Mitsubishi Electric Corp | アクティブマトリックス基板及びその製造方法 |
JP5113609B2 (ja) | 2008-04-24 | 2013-01-09 | パナソニック液晶ディスプレイ株式会社 | 表示装置及びその製造方法 |
CN101604695B (zh) * | 2008-06-10 | 2011-03-23 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示装置 |
JP2010003723A (ja) | 2008-06-18 | 2010-01-07 | Toppan Printing Co Ltd | 薄膜トランジスタ及び薄膜トランジスタアレイ並びに画像表示装置 |
KR101507324B1 (ko) | 2008-09-19 | 2015-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20100067612A (ko) | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
WO2010107027A1 (ja) | 2009-03-17 | 2010-09-23 | 凸版印刷株式会社 | 薄膜トランジスタアレイおよび薄膜トランジスタアレイを用いた画像表示装置 |
US8665192B2 (en) * | 2009-07-08 | 2014-03-04 | Hitachi Displays, Ltd. | Liquid crystal display device |
JP5337603B2 (ja) | 2009-07-08 | 2013-11-06 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
US8598586B2 (en) | 2009-12-21 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
CN107045235A (zh) * | 2010-02-26 | 2017-08-15 | 株式会社半导体能源研究所 | 液晶显示装置 |
CN201876642U (zh) * | 2010-03-19 | 2011-06-22 | 华映视讯(吴江)有限公司 | 像素结构 |
KR101808213B1 (ko) * | 2010-04-21 | 2018-01-19 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN102156367B (zh) * | 2010-08-04 | 2013-06-19 | 京东方科技集团股份有限公司 | 阵列基板、液晶面板和液晶显示器 |
KR101793176B1 (ko) | 2010-08-05 | 2017-11-03 | 삼성디스플레이 주식회사 | 표시 장치 |
TW201224615A (en) | 2010-12-06 | 2012-06-16 | Chunghwa Picture Tubes Ltd | Pixel array substrate and method of fabricating the same |
WO2012090879A1 (ja) | 2010-12-28 | 2012-07-05 | シャープ株式会社 | アクティブマトリクス基板 |
KR20120124011A (ko) * | 2011-05-02 | 2012-11-12 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN102867823B (zh) * | 2012-09-27 | 2015-05-27 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
JP2014089444A (ja) * | 2012-10-05 | 2014-05-15 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
US9905585B2 (en) * | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
KR102083433B1 (ko) * | 2013-07-12 | 2020-03-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP5690894B2 (ja) | 2013-09-16 | 2015-03-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR20230010833A (ko) * | 2013-12-02 | 2023-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN113341624A (zh) * | 2015-02-12 | 2021-09-03 | 株式会社半导体能源研究所 | 显示装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007097074A1 (ja) * | 2006-02-24 | 2007-08-30 | Sharp Kabushiki Kaisha | アクティブマトリクス基板、表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、ゲート絶縁膜形成方法 |
US7542102B2 (en) * | 2006-11-10 | 2009-06-02 | Au Optronics Corporation | Pixel structures of color filter substrate, active device array substrate and liquid crystal display panel |
JP2012145927A (ja) * | 2010-12-20 | 2012-08-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2014199403A (ja) * | 2012-08-28 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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