JPWO2014156170A1 - Electron beam irradiation device - Google Patents

Abstract

To provide an electron beam generator that increases the degree of parallelism for improving the throughput of an electron beam irradiation device and increases the accuracy of exposure. In the first aspect, an electron beam irradiation apparatus for irradiating an object with a drawing pattern by a plurality of electron beams, wherein a surface electron beam source in which a plurality of electron beam generation sources for outputting a plurality of electron beams is arranged; An electron beam irradiation apparatus comprising: a control unit that adjusts an electron beam output time of each of a plurality of electron beam generation sources.

Description

  The present invention relates to an electron beam irradiation apparatus.

Conventionally, a semiconductor integrated circuit provided with a fine pattern uses an electron beam irradiation apparatus and directly draws a small number of electron beams on a semiconductor substrate according to pattern data to form the fine pattern (for example, Patent Document 1). And 2).
Patent Literature 1 JP 2007-329220 A Patent Literature 2 JP 9-245708 A Non Patent Literature 1 PNMinh, LTTTuyen, T. Ono, H. Mimura, K. Yokoo and M. Esashi: Carbon nanotube on a Si tip for electron field emitter, Jpn. J. Appl. Phys., 41 Part2, 12A (2002), L1409-L1411
Non-Patent Document 2 PNMinh, LTTTuyen, T. Ono, H. Miyashita, Y. Suzuki, H. Mimura and M. Esashi: Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters, J. Vac. Sci. Technol. B 21, 4, (2003), 1705-1709
Non-Patent Document 3 PNMinh, T. Ono, N. Sato, H. Mimura and M. Esashi: Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer, J. Vac. Sci. Technol., B22 , 3 (2004) 1273-1276
Non-Patent Document 4 JHBae, PNMinh, T. Ono and M. Esashi: Schottky emitter using boron-doped diamond, J. Vac. Sci. Technol., B22, 3 (2004) 1349-1352
Non-Patent Document 5 C.-H. Tsai, T. Ono and M. Esashi: Fabrication of diamond Schottky emitter array by using electrophoresis pre-treatment and hot-filament chemical vapor deposition, diamond and related materials, 16 (2007) 1398- 1402

  However, the throughput of the electron beam irradiation apparatus has been reduced as the pattern to be drawn becomes finer and the diameter of the semiconductor wafer increases. Although there is a trend to downsize the electron beam generator for the purpose of improving the throughput, it is difficult to actually manufacture and operate it, and it is also difficult to achieve both throughput and exposure accuracy.

  In the first aspect of the present invention, there is provided an electron beam irradiation apparatus for irradiating an object with a drawing pattern by a plurality of electron beams, wherein a plurality of electron beam generation sources for outputting a plurality of electron beams are arranged. An electron beam irradiation apparatus including a beam source and a control unit that adjusts the electron beam output time of each of a plurality of electron beam generation sources is provided.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

The structural example of the electron beam irradiation apparatus 1000 which concerns on this embodiment is shown with the target object 10. FIG. The structural example of the electron beam irradiation part 100 which concerns on this embodiment is shown with the target object 10. FIG. The structural example of the surface electron beam source 200 which concerns on this embodiment is shown. The control part 140 and several drive circuit 220a-d which concern on this embodiment are shown. A group of a plurality of drive circuits 220 according to the present embodiment is shown (only a quarter portion of an electron source array divided into concentric blocks is displayed). The structure of the drive circuit 220 which concerns on this embodiment is shown. The structure of the 2nd level shifter 290 which concerns on this embodiment is shown. The processing flow of the electron beam irradiation method which concerns on this embodiment is shown. Each signal waveform of the drive circuit 220 which concerns on this embodiment is shown. Each signal waveform of the drive circuit 220 which concerns on this embodiment is shown. The structure of the drive circuit 220 which concerns on the modification of this embodiment is shown.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 shows a configuration example of an electron beam irradiation apparatus 1000 according to the present embodiment together with an object 10. The electron beam irradiation apparatus 1000 irradiates the object 10 with a drawing pattern using a plurality of electron beams, and draws a fine pattern on the object 10.

  The object 10 may be a semiconductor substrate, for example, a plate-like substrate formed by processing a crystal of a semiconductor material such as silicon, silicon carbide, germanium, gallium arsenide, gallium nitride, gallium phosphide, or indium phosphide. It's okay. The object 10 may be coated with an electron beam resist. The electron beam irradiation apparatus 1000 includes an electron beam irradiation unit 100, a stage unit 110, a storage unit 120, a measurement unit 130, a control unit 140, a communication unit 150, and a computer unit 160.

  The electron beam irradiation unit 100 is an electron column that irradiates a plurality of electron beams. The electron beam irradiation unit 100 draws a predetermined drawing pattern by irradiating the surface of the object 10 with a plurality of electron beams. Details of the electron beam irradiation unit 100 will be described later.

  The stage unit 110 places an object 10 to be irradiated with an electron beam. The stage unit 110 moves the mounted object 10 in the horizontal direction, and causes the electron beam irradiation unit 100 to draw a predetermined fine pattern on one surface of the object 10 at a predetermined position.

  The stage unit 110 includes, for example, an XY stage that moves on a horizontal plane of the stage. In addition, the stage unit 110 may include a θ stage that rotates around a predetermined rotation axis. The stage unit 110 may further include a tilt stage that adjusts the horizontal position of the stage. The stage unit 110 may further include a Z stage that moves the object 10 in the vertical direction and adjusts the distance between the object 10 and the electron beam irradiation unit 100.

  The storage unit 120 stores drawing pattern data drawn by the electron beam irradiation unit 100. Here, the drawing pattern data may include information such as position data on one surface of the object 10 and irradiation data indicating whether or not to irradiate an electron beam. The storage unit 120 may store predetermined drawing pattern data in advance.

  The measurement unit 130 measures the intensity of each of the plurality of electron beams of the electron beam irradiation unit 100. For example, the measurement unit 130 causes the electron beam irradiation unit 100 to individually output an electron beam and measures the intensity of the output electron beam. The measurement unit 130 supplies the measurement result of the electron beam intensity to the control unit 140.

  The control unit 140 is connected to the electron beam irradiation unit 100, the stage unit 110, the storage unit 120, the measurement unit 130, and the communication unit 150, and according to the drawing pattern data stored in the storage unit 120, the electron beam irradiation unit 100 electron beam irradiation and operation of the stage unit 110 are controlled.

  For example, the control unit 140 controls the electron beam irradiation of the electron beam irradiation unit 100 by transmitting irradiation data of a plurality of electron beams stored in the storage unit 120 to the electron beam irradiation unit 100. Further, the control unit 140 controls the operation of the stage unit 110 by transmitting a control signal for moving the stage unit 110 to the stage unit 110 in accordance with the drawing pattern data stored in the storage unit 120. Further, the control unit 140 may transmit a control signal to the electron beam irradiation unit 100 and / or the stage unit 110 in accordance with an instruction signal received via the communication unit 150.

  Further, the control unit 140 adjusts the output times of the plurality of electron beams output by the electron beam irradiation unit 100 based on the measurement result of the measurement unit 130. For example, the control unit 140 determines the output time of each electron beam based on the measurement results of the intensity of the plurality of electron beams, and supplies a set value including the output time to the electron beam irradiation unit 100.

  The communication unit 150 connects the control unit 140 and the computer unit 160. The communication unit 150 may have a general-purpose or dedicated interface, and the control unit 140 and the computer unit 160 may be connected to communicate with each other. The communication unit 150 may use a general-purpose high-speed serial interface or parallel interface such as Ethernet (registered trademark), USB, or Serial RapidIO. Further, the communication unit 150 may connect the control unit 140 and the computer unit 160 wirelessly.

  The computer unit 160 transmits an instruction signal for operating the electron beam irradiation unit 100 and / or the stage unit 110 to the control unit 140. The computer unit 160 may execute an operation program for operating the electron beam irradiation apparatus 1000 and transmit an instruction signal according to the operation program. The computer unit 160 may have an input device for inputting a user instruction, and may transmit an instruction signal according to the user instruction. The computer unit 160 may be a personal computer or a server machine.

  FIG. 2 shows a configuration example of the electron beam irradiation unit 100 according to this embodiment together with the object 10. FIG. 2 shows a configuration example of a vertical section of the electron beam irradiation unit 100. The electron beam irradiation unit 100 includes a surface electron beam source 200, an acceleration electrode 230, and an electron lens 240.

  In the surface electron beam source 200, a plurality of electron beam generation sources 212 are arranged, and a plurality of electrons are generated from the plurality of electron beam generation sources 212 for a period corresponding to the set value of the output time of the electron beam supplied from the control unit 140. Output the beam. The surface electron beam source 200 includes an electron beam generating device 210 and a driving device 219.

  The electron beam generating device 210 is bonded to the driving device 219 and has a plurality of electron beam generating sources 212 that output a plurality of electron beams on the opposite side of the driving device 219. A constant voltage is applied to the electron beam of the electron beam generating device 210, and as an example, approximately −5 kV is applied. Details of the electron beam generating device 210 will be described later.

  The drive device 219 is bonded to the side opposite to the electron beam generation source 212 of the electron beam generation device 210 including the plurality of electron beam generation sources 212 to output electron beams from the plurality of electron beam generation sources 212. The drive device 219 receives irradiation data from the control unit 140 and causes the plurality of electron beam generation sources 212 to output electron beams according to the irradiation data.

  The driving device 219 may be formed of a semiconductor substrate such as silicon. The driving device 219 has a coefficient of thermal expansion of the electron beam generating device 210 to such an extent that the electron beam generating device 210 or the driving device 219 does not bend or peel even when the surface electron beam source 200 is driven and the temperature rises. It may be formed of a material having substantially the same or similar thermal expansion coefficient.

  The acceleration electrode 230 is provided on the side of the surface electron beam source 200 that outputs the electron beam, and a voltage higher than that of the electrode that outputs the electron beam of the surface electron beam source 200 is applied to accelerate the electron beam. The acceleration electrode 230 is formed with a plurality of through holes respectively corresponding to the plurality of electron beam generation sources 212, and allows the plurality of electron beams to pass therethrough. The acceleration electrode 230 may have a plurality of through holes arranged in a matrix. A constant voltage is applied to the acceleration electrode 230, and as an example, approximately 0 V is applied together with the object 10.

  The electron lens 240 irradiates the object 10 that is the object with a drawing pattern of a plurality of electron beams output from the surface electron beam source 200 at a predetermined magnification. For example, the electron lens 240 reduces the drawing pattern drawn by a plurality of electron beams to 1/100 or less. The electron lens 240 has a coil part 242, a lens part 244, and a converging part 246.

  The coil unit 242 controls the deflection of the plurality of electron beams in the XY directions. That is, the coil unit 242 controls the beam shape of the electron beam on the surface of the object 10 irradiated with the electron beam. The coil unit 242 may be a rotation coil that corrects the correspondence between the X axis or Y axis of the electron beam irradiation unit 100 and the X axis or Y axis on the surface of the object 10. The coil unit 242 may correct the amplitudes of the beam diameter on the surface of the object 10 in the X and Y directions.

  The lens unit 244 images a plurality of electron beams on the surface of the object 10. The lens unit 244 may constitute a telecentric lens system and functions as an objective lens of the surface electron beam source 200.

  The converging unit 246 applies an acceleration electric field and / or a deceleration electric field to a plurality of electron beams. The converging unit 246 narrows and converges the thicknesses and bundles of a plurality of electron beams, and irradiates the object 10 that is the object with an electron beam having a predetermined energy.

  The electron beam irradiation unit 100 according to this embodiment includes the surface electron beam source 200 that generates a plurality of electron beams such as a surface electron beam source, and irradiates the sample with a plurality of electron beams from one electron column. Improve throughput. Conventionally, it has been difficult to manufacture such an electron beam source that generates a plurality of electron beams. However, the surface electron beam source 200 according to the present embodiment is easily manufactured by a manufacturing process such as a semiconductor manufacturing process. can do.

  FIG. 3 shows a configuration example of the surface electron beam source 200 according to the present embodiment. The surface electron beam source 200 accelerates and focuses the electrons emitted from each of the plurality of electron beam generation sources 212 and outputs the electrons as a plurality of electron beams. The planar electron beam source 200 includes an electron beam generating device 210 and a driving device 219 as described with reference to FIG.

  The surface electron beam source 200 may include a voltage supply unit 202 that supplies a power supply voltage and a signal voltage from the control unit 140 to each unit. In the surface electron beam source 200, the first electrode unit 310 is connected via the barrier unit 330.

  The voltage supply unit 202 includes a constant voltage generation circuit and / or a constant current generation circuit and a plurality of electrode units 204, and supplies a power supply voltage and the like to connection destinations connected to the electrode units 204, respectively. The voltage supply unit 202 is provided on the surface of the driving device 219 opposite to the electron beam generating device 210 side. The plurality of electrode portions 204 may be connected to a plurality of connection destinations by wire bonding or the like.

  Here, electrodes such as the electrode portion 204 described in this embodiment are made of nickel, gold, chromium, titanium, aluminum, tungsten, palladium, rhodium, platinum, copper, ruthenium, indium, iridium, osmium, and / or molybdenum. May include. The electrode may be an alloy of two or more materials including these materials.

  The electron beam generating device 210 has a substrate 211 made of a semiconductor crystal such as silicon. The substrate 211 is provided with a plurality of recesses 214, an isolation part 340, and a third electrode part 350. Each of the plurality of recesses 214 has a concave surface, and a plurality of electron beam generation sources 212a and 212b are formed in each. In addition, each of the plurality of recesses 214 may be formed in a spherical shape or a parabolic shape.

  As an example, each of the plurality of recesses 214 is formed by isotropic etching, and electron beam generation sources 212a and 212b for generating an electron beam are formed. For example, the plurality of recesses 214 are formed by wet etching. The electron beam generation source 212 includes a polysilicon layer 216, a first insulating film 215, a second insulating film 218, an electron emission unit 300, a first electrode unit 310, a second electrode unit 320, and a barrier unit 330. Including.

  The polysilicon layer 216 is formed on the surface of the substrate 211 where the plurality of recesses 214 are formed. At least a part of the polysilicon layer 216 formed in the recess 214 becomes an electron-emitting portion 300 that is anodically activated and nanocrystallized.

  The first insulating film 215 and the second insulating film 218 are formed on the surface of the substrate 211 where the polysilicon layer 216 is formed. The first insulating film 215 and the second insulating film 218 electrically insulate the polysilicon layer 216 of the adjacent electron beam generation source 212 and prevent a leakage current from being generated through the polysilicon layer 216. . For example, the first insulating film 215 is a SiO 2 film formed by thermal oxidation, and the second insulating film 218 is a SiN film formed by a CVD method or the like.

  The electron emission unit 300 is provided in each of the plurality of recesses 214 and emits electrons. The plurality of recesses, that is, the plurality of electron emission units 300 are arranged in a matrix on one surface of the substrate 211 and emit electrons according to the drive voltage from the drive device 219. In addition, each of the plurality of electron emission units 300 includes a nanocrystal. For example, the electron emission unit 300 is formed of nanocrystalline silicon. Nanocrystalline silicon forms a surface oxide film that functions as an electron tunneling barrier, and a plurality of nanocrystalline silicons are arranged to form a column connecting the electron tunneling barriers.

  In such an array of electron tunnel barriers, a voltage is applied to the barriers, whereby electrons passing through the barriers can be controlled in a minute unit such as several units. Therefore, the electron emission part 300 can control the amount of electron emission precisely and with good reproducibility by having a nanocrystal.

  Further, when the electron emission unit 300 is formed of nanowires in which a plurality of such nanocrystalline silicons are arranged, the nanowires are not formed perpendicular to the surface that outputs electrons, and the output surface depends on the crystal orientation. May be tilted with respect to the normal. In this case, the electron emission unit 300 may output electrons in a direction different from the normal direction of the output surface. In this case, the electron emission unit 300 determines the electron emission amount by multiplying the distribution of the tunnel probability in a different direction with respect to the normal of the output surface and the distribution in which the nanowire emits electrons in the direction.

  Since the electron emission unit 300 includes the concave portion 214, it is possible to output more electrons as an effective electron beam to the outside as compared with the amount of electron emission when the concave shape is flat. . For example, when the electron emission part 300 is formed in a flat shape by forming a direction in which the electron emission distribution is higher and / or a direction in which the tunnel probability distribution is higher in the direction in which the electron beam is output. More electrons can be output as an electron beam than the amount of emitted electrons. As an example, the shape of the recess 214 is such that the direction in which electrons are emitted from the plurality of electron emission units 300 and the direction in which multiplication of the tunnel probability of electrons in that direction becomes larger is the corresponding opening of the first electrode unit 310. Turn to.

  Each of the plurality of electron emission units 300 may include an insulating film that tunnels electrons to be emitted instead of the nanocrystal. Since such an insulating film can be adjusted by the probability of tunneling the amount of electrons emitted, the amount of electrons emitted can be controlled by the material, film thickness, and voltage applied to the insulating film. it can.

  The first electrode unit 310 is provided corresponding to each of the plurality of electron emission units 300, accelerates the electrons emitted by the corresponding electron emission unit 300, and forms an electron beam from the recess 214 provided in the electron emission unit 300. Output. Each of the plurality of first electrode portions 310 has an opening 312 and is formed in a plate shape on one surface of the substrate 211 where the plurality of recesses 214 are provided, and from the opening 312 due to a potential difference with the corresponding recess 214. The electron beam is focused and output. The opening 312 is formed near the center of the first electrode unit 310 and / or the electron emission unit 300. The opening 312 may be a circular through hole.

  In the drawing, the first electrode part 310a is provided corresponding to the electron emission part 300a, and shows an example in which electrons emitted from the electron emission part 300a are accelerated and output as an electron beam from the opening 312a. Similarly, the 1st electrode part 310b is provided corresponding to the electron emission part 300b, and accelerates the electron which the electron emission part 300b discharge | releases. Here, the plurality of first electrode portions 310 (the first electrode portion 310a and the first electrode portion 310b in the example in the figure) are electrically connected, and a predetermined constant voltage is applied thereto.

  The first electrode unit 310 may be electrically connected to an electrode or the like provided outside the substrate 211 and may have a connection unit to which a drive voltage or the like from the control unit 140 is applied. The connection part may be an electrode part in which a conductive material is further formed on a part of the first electrode part by plating or the like. The connecting portion may be connected to an external electrode by wire bonding or the like.

  The second electrode portion 320 is provided in each of the plurality of recesses 214 and is formed of a conductive material that covers the recesses 214. The second electrode unit 320 causes the electrons emitted from the electron emission unit 300 to be output as an electron beam from the opening 312 due to a potential difference from the first electrode unit 310. Here, the second electrode unit 320 is formed to be thin enough to pass electrons emitted from the electron emission unit 300. The plurality of second electrode portions 320 provided in the plurality of recesses 214 are electrically connected, and a predetermined constant voltage is applied thereto.

  Here, the first electrode part 310 and the second electrode part 320 may be applied with a driving voltage at which the potential difference between these electrodes is several tens to several hundreds volts. Preferably, the first electrode unit 310 and the second electrode unit 320 are each applied with a driving voltage having a potential difference of several hundreds of volts from the control unit 140. As an example, the first electrode part 310 and the second electrode part 320 are each applied with a driving voltage with a potential difference of 150V. The second electrode part 320 includes a connection part 322.

  The connection part 322 is an electrode part formed to be thicker in the second electrode part 320, and is electrically connected to an electrode provided outside the substrate 211 and applied with a driving voltage. The connection part 322 may be an electrode part in which a conductive material is further formed on a part of the second electrode part by plating or the like. The connection portion 322 may be connected to an external electrode by wire bonding or the like.

  The barrier portion 330 is provided at a position corresponding to the plurality of recesses 214 between the plurality of first electrode portions 310 and the substrate 211, and is formed of an insulating material. The barrier unit 330 separates a predetermined distance between the substrate 211 and the first electrode unit 310 and supports the first electrode unit 310 while electrically connecting the first electrode unit 310 and the second electrode unit 320. Insulate. The barrier portion 330 may be formed of a resin or the like, and may instead be a silicon oxide film formed by a CVD method or the like.

  The electron beam generation source 212 described above applies electrons from the opening 312 by applying an electric field generated by a driving voltage applied to each of the first electrode unit 310 and the second electrode unit 320 to electrons emitted from the electron emission unit 300. Generate a beam. Here, in the electron beam generation source 212, the concave portion 214 is formed in a concave shape, a spherical shape, or a parabolic shape, so that the electron emission surface of the electron emission unit 300 is also concave, spherical, or It is formed in a parabolic shape.

  As a result, the electron beam generation source 212 can easily focus the electron emitting unit 300 on the opening 312 by aligning the direction in which the electron emitting unit 300 emits electrons with the direction of the opening 312. That is, the electron beam generation source 212 can increase the number of electrons focused on the opening 312 and increase the density of the generated electron beam.

  The electron beam generation source 212 irradiates the object 10 with the generated electron beam through the subsequent electron lens 240. Here, the electron lens 240 may have an aberration that causes blurring, distortion, or the like in the image formation of the electron beam, similar to an optical lens or the like. For example, the electron lens 240 may shorten the focal position of electrons traveling near the outside of the beam compared to electrons traveling near the center of the electron beam to be imaged.

  Therefore, the electron beam generation source 212 may correct the aberration while increasing the electron beam density by forming the electron emitting surface of the electron emitting unit 300 into a concave shape, a spherical shape, or a parabolic shape. . Here, when the electron beam generation source 212 makes the recess 214 flat, the electrons output from the region where the normal direction of the electron emission surface of the electron emission unit 300 is in the vicinity of the opening 312 are in the center of the electron beam. Easy to focus.

  Therefore, the electron emission unit 300 is directed to a region near the edge side of the emission surface with a distance between the region near the center of the emission surface and the opening 312 while directing the electron emission surface toward the opening 312. A surface for shortening the distance from the opening 312 is formed. That is, by forming the emission surface so that electrons that are likely to be focused outside the electron beam reach the opening 312 more quickly, the focal length of the electrons is increased. This is equivalent to the fact that the concave portion 214 concentrates the laminar flow of electrons emitted from a portion closer to the center point of the emission surface of the electron emission unit 300 to a position closer to the center point to generate negative aberration. .

  Thereby, the electron beam generation source 212 causes electrons traveling in the vicinity of the center of the electron beam to be generated (for example, in the vicinity of a perpendicular passing through the approximate center of the recess 214 indicated by AA ′ and BB ′ in FIG. 3). In comparison, the focal length of electrons traveling near the outside of the electron beam can be increased. For example, the electron beam generating source 212 increases the focal length of the electron beam as it moves away from the center of the optical axis of the electron beam, and concentrically distributes the focal length in a cross section perpendicular to the irradiation direction of the electron beam. To have. As described above, the electron beam generation source 212 can correct the aberration of the electron lens 240 by forming an emission surface corresponding to the aberration of the electron lens 240.

  In addition, since the region near the edge side of the emission surface of the electron emission unit 300 is closer to the outside of the electron beam generation source 212 than the region near the center, it is easily affected by an external electric field. That is, electrons output from the region near the edge side of the emission surface are likely to be output in a direction inclined from the normal line of the emission surface, and the focal length tends to be long. As described above, the electron beam generation source 212 forms a distribution of focal lengths in the electron beam to be output depending on the external electric field. Therefore, the shape of the emission surface of the electron emission unit 300 is adjusted according to such distribution. Then, the aberration of the electron beam imaged on the object 10 may be corrected.

  Here, the second electrode portion 320 forms an electrode that covers the recess 214, and keeps the recess 214 at the same potential. Accordingly, the second electrode unit 320 can reduce the influence of the external electric field while emitting electrons with a stable velocity distribution from the electron emission unit 300 and focusing the electrons in the vicinity of the opening 312.

  The isolation part 340 is formed by being filled with an insulating material. The isolation unit 340 is formed so as to surround each of the plurality of electron beam generation sources 212 and electrically isolates the electron beam generation sources 212 from each other. As an example, the isolation part 340 is a groove formed in a plurality of rings or lattices corresponding to the plurality of electron emission parts 300 on the surface of the substrate 211 opposite to the surface on which the plurality of recesses 214 are formed. Is filled with an insulating material such as resin.

  The third electrode unit 350 is formed on the lower surface of the substrate 211 opposite to the upper surface where the plurality of recesses 214 are formed, corresponding to each of the plurality of electron emission units 300. The third electrode unit 350 is applied with a driving voltage for emitting electrons from the plurality of electron emission units 300. The third electrode unit 350 may include a conductive film 352 formed on the lower surface of the substrate 211. The third electrode unit 350 is electrically connected to the driving device 219.

  The drive device 219 includes a plurality of drive circuits 220a and 220b corresponding to the plurality of electron beam generation sources 212a and 212b, respectively. The drive circuits 220a and 212b supply a drive voltage for driving each of the plurality of electron beam generation sources 212.

  Specifically, the drive circuit 220 individually supplies a drive voltage for emitting electrons from the plurality of electron emission units 300 to each of the plurality of electron emission units 300. The driver circuit 220a and the like may be formed over a semiconductor substrate, and one surface of the semiconductor substrate may be attached to the substrate 211.

  Here, the drive circuit 220 has a plurality of electrode portions 222 corresponding to the third electrode portions 350 formed on the substrate 211, and the electrode portions 222 are electrically connected to the corresponding third electrode portions 350 while being connected to the substrate. 211, and a driving voltage is supplied through the electrode unit 222. For example, the electrode portions 222 are formed at the same pitch as the third electrode portions 350 so as to correspond to the third electrode portions 350 formed on the substrate 211 at a pitch of about 100 μm.

  The drive circuit 220 may include a plurality of connection portions 224 that are electrically connected to external electrodes and the like and to which a drive voltage, a power supply voltage, and the like are applied. The connection portion 224 may be connected to an external electrode by wire bonding or the like.

  At least one of the plurality of drive circuits 220 may include an inspection terminal 354 that is exposed to the outside via the voltage supply unit 202 and outputs a drive voltage. The inspection terminal 354 outputs a drive signal supplied from the drive circuit 220 to the corresponding electron beam generation source 212 to the surface of the drive device 219 opposite to the electron beam generation device 210 at the time of inspection.

  The drive circuit 220 may further apply a different offset bias depending on the arrangement of the plurality of electron emission units 300. The plurality of electron emission units 300 are individually applied with a driving voltage to emit electrons, and the corresponding plurality of electron beam generation sources 212 generate a plurality of electron beams. The plurality of electron beam generation sources 212a and the like cause the generated plurality of electron beams to be imaged by the subsequent electron lens 240 and irradiate the object 10 with a drawing pattern.

  Here, the optical system such as the electron lens 240 gives a slight difference in focal position between the electron beam passing near the center of the lens and the electron beam passing near the outer edge of the lens, and blurs the drawn image by a plurality of electron beams. May cause distortion and the like. For example, the electron lens 240 may shorten the focal position with respect to an electron beam passing near the outer edge of the lens as compared with an electron beam passing near the center of the lens.

  Therefore, the drive circuit 220 has a function of generating an electron beam that passes near the outer edge of the electron lens 240 as compared with the electron beam source 212 that generates an electron beam passing near the center of the electron lens 240. Supply high offset voltage. As a result, the drive circuit 220 increases the output speed of the electron beam that passes through the vicinity of the outer edge of the electronic lens 240 to increase the focal length, and cancels the focal position that is shortened by the electronic lens 240 to correct the correction. it can.

  Here, the plurality of electron emission units 300 may be distributed to a plurality of blocks according to their arrangement, and the drive circuit 220 may apply an offset bias for each block. For example, among the plurality of electron emission units 300, the plurality of electron emission units 300 that are arranged in the vicinity of the center on one surface of the substrate 211 and emit an electron beam that passes through the vicinity of the center of the electron lens 240 are the same. Distributed to the blocks. Further, the other electron emission units 300 may be distributed to two or more blocks in a substantially concentric manner around the central block.

  As described above, the plurality of electron emission units 300 are divided into two or more concentrically in the outer edge direction of the electron lens 240 with the electron emission unit 300 that outputs an electron beam passing near the center of the electron lens 240 as a central block. The electron emission unit 300 corresponding to the annular region is distributed as another block. The drive circuit 220 adjusts the focal position of the electron beam for each region divided concentrically around the electron beam passing near the center of the electron lens 240 by applying different offset bias for each block. Thus, the image formation of the drawing pattern can be corrected efficiently.

  The drive circuit 220 applies a negative voltage of several kV to several tens of kV to the first electrode unit 310 and the second electrode unit 320. As an example, the drive circuit 220 applies −5 kV to the second electrode unit 320 corresponding to the electron emission unit 300 distributed in the center of the concentric circle, and −5 kV + 150 V to the corresponding first electrode unit 310.

  In this case, the electron beam generation source 212 generates an electron beam by applying an electric field generated by a potential difference of 150 V to electrons emitted from the electron emission unit 300, and the generated electron beam is generated with a potential difference of about 5 kV from the acceleration electrode 230. Accelerate. The driving circuit 220 applies −5 kV + nV to the corresponding second electrode portion and −5 kV + 150 V + nV to the corresponding first electrode portion every time n blocks are different from the central block toward the outer edge. Thus, the drive circuit 220 may finely adjust the acceleration electric field of the electron beam for each block by changing the drive voltage by about 1 V every time the block is different.

  The above-described surface electron beam source 200 according to the present embodiment has a plurality of electron beam generation sources 212 and can individually drive the plurality of electron beam generation sources 212 to output a plurality of electron beams. . Accordingly, the electron beam irradiation unit 100 including the surface electron beam source 200 can irradiate the object with a predetermined drawing pattern by a plurality of electron beams.

  Here, the electron beam generation source 212 is formed in each of the plurality of recesses 214 formed on the semiconductor substrate by a simple method such as isotropic etching. Therefore, the plurality of electron beam generation sources 212 can be formed on the substrate 211 by a semiconductor manufacturing process or the like. That is, for example, the electron beam generation sources 212 are formed in an area of 1 cm × 1 cm of the substrate 211 and arranged in a matrix of 100 × 100. As described above, the electron beam generation source 212 is formed in a matrix shape with a pitch of about 100 μm, so that the object can be irradiated with a drawing pattern with a pitch of about 1 μm or less by the electron lens 240.

  Further, the electron beam generation source 212 provided in the surface electron beam source 200 includes a plurality of recesses 214 and a barrier portion 330 formed by a separate process at a position corresponding to the plurality of recesses 214. Accordingly, the surface electron beam source 200 can generate a plurality of electron beams without precisely forming a cylindrical hole having a bottom having a predetermined shape such as a concave shape, a spherical shape, or a parabolic shape. The source 212 can be easily formed. Thus, the surface electron beam source 200 can include a plurality of electron beam generation sources 212 formed with a small area and a high density. Therefore, the electron beam irradiation unit 100 can irradiate about 10000 electron beams while reducing the size of the apparatus.

  In the above embodiment, the example in which the surface electron beam source 200 and the electron beam irradiation unit 100 are used in the electron beam irradiation apparatus 1000 has been described. Instead, the surface electron beam source 200 and the electron beam irradiation unit 100 may be provided in a device using an electron beam, such as an electron microscope, an electron beam microanalyzer, a cathode ray tube, a transmission tube, an imaging tube, a vacuum tube, a processing device, a heating device. You may use for an apparatus or a sterilizer.

  FIG. 4 shows the controller 140 and a plurality of drive circuits 220a-d. The plurality of drive circuits 220a to 220d are cascade-connected to the control unit 140, and data is transmitted by propagating data from the control unit 140 in the order of the drive circuit 220a, the drive circuit 220b, the drive circuit 220c, and the drive circuit 220d. Is transmitted.

  The control unit 140 sequentially outputs irradiation data to the plurality of drive circuits 220a to 220d cascaded in series, and causes the plurality of drive circuits a to d to write the irradiation data. The control unit 140 sequentially outputs a set value of the electron beam output time to the plurality of drive circuits 220a to 220d, and sets the set value for each of the plurality of drive circuits 220a to 220d.

  For example, the control unit 140 sequentially transmits the irradiation data to the shift register SR of the drive circuit 220a and shifts the irradiation data between the shift registers, so that a plurality of shift registers SR of the plurality of drive circuits 220a to 220d are transferred. Irradiation data for the electron beam generation sources 212a to 212d corresponding to the drive circuits 220a to 220d are stored. The control unit 140 stores irradiation data in the register LT0 of the plurality of drive circuits 220a to 220d by transmitting an instruction to store the value of the shift register SR in the register LT0 to the plurality of drive circuits 220a to 220d.

  The controller 140 stores the set value of the output time of the electron beam generation source 212 corresponding to each of the drive circuits 220a to 220d in the registers LT1 and LT2 of the plurality of drive circuits 220a to 220d by the same method. As a result, each of the drive circuits 220a to 220d stores a 2-bit (four-stage) value as a set value of the output time. Note that the irradiation data register of the drive circuits 220a to 220d may be 2 bits or more, and the set value register may be 3 bits or more or 1 bit.

  FIG. 5 shows a group of a plurality of drive circuits 220 (only a quarter portion of the electron source array divided into concentric blocks is shown). In the present embodiment, the plurality of drive circuits 220 may be divided into a plurality of groups, and the drive circuits 220 may be connected in cascade for each group. As shown in the figure, the area of the surface electron beam source 200 is divided by a block surrounded by a plurality of concentric circles for each focal length of the electron beam.

  Furthermore, one block surrounded by concentric circles is divided into a plurality of groups G1, G2 and the like. The plurality of drive circuits 220 are connected in cascade for each group, and the control unit 140 sequentially outputs irradiation data and the like to the plurality of drive circuits 220 included in each of the plurality of groups as indicated by arrows. Thus, the data is written in the plurality of drive circuits 220.

  FIG. 6 shows the configuration of the drive circuit 220. The drive circuit 220 supplies a drive voltage to the corresponding electron beam generation source 212 based on the irradiation data written from the control unit 140 and the set value of the output time. The drive circuit 220 includes a shift register SR, a register LT0, a register LT1, a register LT2, a buffer amplifier 248, an AND circuit 250, an AND circuit 252, an AND circuit 254, an AND circuit 260, an AND circuit 262, an AND circuit 264, an AND circuit 266, The circuit includes an OR circuit 268, an AND circuit 270, an AND circuit 272, an OR circuit 274, a first level shifter 280, and a second level shifter 290.

  The drive circuit 220 receives the clock signal SRckin and the data signal SRdin from the controller 140 and supplies the clock signal SRckin and the data signal SRdin to the subsequent drive circuit 220. The subsequent drive circuit 220 receives the clock signal SRckin and the data signal SRdin from the previously connected drive circuit 220 and supplies them to the subsequent drive circuit 220.

  The drive circuit 220 receives a plurality of enable signals Ena0 to 3 having a predetermined length of rising period, a register specifying signal Md0, a register specifying signal Md1, a write signal Wr, a disable signal Dis, A reset signal Rst is input. These signals may be connected to the control unit 140 in a one-to-many manner, or may be connected in cascade to the control unit 140 instead.

  The buffer amplifier 248 receives a clock signal from the control unit 140 or the driving circuit 220 connected in front, amplifies the clock signal, and supplies the amplified clock signal to the driving circuit 220 connected later.

  In the shift register SR, the control unit 140 or the shift register of the driving circuit 220 connected before is connected to the data input D, the shift register of the subsequent driving circuit 220 is connected to the data output Q, and the control unit is connected to the reset input R. 140 is connected. The shift register SR inputs the data signal SRdin from the control unit 140 or the previously connected driving circuit 220 to the data input D, and takes in the data signal SRdin at a timing (for example, a rising timing) indicated by the clock signal SRckin. Then, the shift register SR outputs the captured data signal SRdin to the register LT0, the register LT1, the register LT2, and the drive circuit 220 connected later. The shift register SR receives a reset signal Rst from the control unit 140.

  The AND circuit 250 receives the inverted value of the register specifying signal Md0, the inverted value of the register specifying signal Md1, and the write signal Wr, and outputs a logical product of these to the register LT0. The AND circuit 252 receives the register designation signal Md0, the inverted value of the register designation signal Md1, and the write signal Wr, and outputs a logical product of these to the register LT1. The AND circuit 254 receives the inverted value of the register designation signal Md0, the register designation signal Md1, and the write signal Wr, and outputs a logical product of these to the register LT2.

  In the register LT0, the output Q of the shift register SR is connected to the data input D, and the output of the AND circuit 250 is connected to the clock input E. The register LT0 receives the output of the AND circuit 250 as an enable signal, and stores the output value of the shift register SR in a state where the output from the AND circuit 250 rises. Thereby, the register LT0 stores the output of the shift register SR when the write signal Wr rises in a state where the control unit 140 outputs the L-level register designation signal Md0 and outputs the L-level register designation signal Md1.

  In addition, the control unit 140 is connected to the reset input R, and the register LT0 receives the reset signal Rst from the control unit 140. The register LT0 outputs the values stored in the AND circuit 260, the AND circuit 262, the AND circuit 264, and the AND circuit 266.

  In the register LT1, the output Q of the shift register SR is connected to the data input D, and the output of the AND circuit 252 is connected to the clock input E. The register LT1 stores the output value of the shift register SR with the output from the AND circuit 252 rising. As a result, the register LT1 stores the output of the shift register SR when the write signal Wr rises in a state where the control unit 140 outputs the H-level register designation signal Md0 and the L-level register designation signal Md1. .

  In addition, the control unit 140 is connected to the reset input R, and the register LT1 receives the reset signal Rst from the control unit 140. The register LT1 outputs the values stored in the AND circuit 260, the AND circuit 262, the AND circuit 264, and the AND circuit 266.

  In the register LT2, the output Q of the shift register SR is connected to the data input D, and the output of the AND circuit 254 is connected to the clock input E. The register LT2 stores the output value of the shift register SR with the output from the AND circuit 254 rising. As a result, the register LT2 stores the output of the shift register SR when the write signal Wr rises in a state where the control unit 140 outputs the L-level register designation signal Md0 and the H-level register designation signal Md1.

  In addition, the control unit 140 is connected to the reset input R, and the register LT2 receives the reset signal Rst from the control unit 140. The register LT2 outputs the values stored in the AND circuit 260, the AND circuit 262, the AND circuit 264, and the AND circuit 266.

  The AND circuit 260 receives the inverted value of the output of the register LT1, the inverted value of the output of the register LT2, and the enable signal Ena0 from the control unit 140, and outputs a logical product of these to the OR circuit 268. That is, when the value stored in the register LT1 is 0 and the value stored in the register LT2 is 0, the AND circuit 260 outputs an H level signal to the OR circuit 268 corresponding to the rising period of the enable signal Ena0.

  The AND circuit 262 receives the output of the register LT1, the inverted value of the output of the register LT2, and the enable signal Ena1 from the control unit 140, and outputs a logical product of these to the OR circuit 268. That is, when the value stored in the register LT1 is 1 and the value stored in the register LT2 is 0, the AND circuit 262 outputs an H level signal to the OR circuit 268 corresponding to the rising period of the enable signal Ena1.

  The AND circuit 264 receives the inverted value of the output of the register LT1, the output of the register LT2, and the enable signal Ena2 from the control unit 140, and outputs a logical product of these to the OR circuit 268. That is, when the value stored in the register LT1 is 0 and the value stored in the register LT2 is 1, the AND circuit 264 outputs an H level signal to the OR circuit 268 corresponding to the rising period of the enable signal Ena2.

  The AND circuit 266 inputs the output of the register LT 1, the output of the register LT 2, and the enable signal Ena 3 from the control unit 140, and outputs a logical product of these to the OR circuit 268. That is, when the value stored in the register LT1 is 1 and the value stored in the register LT2 is 1, the AND circuit 266 outputs an H level signal to the OR circuit 268 corresponding to the rising period of the enable signal Ena3.

  The OR circuit 268 receives outputs from the AND circuit 260, the AND circuit 262, the AND circuit 264, and the AND circuit 266, and outputs a logical sum of these inputs to the AND circuit 270. As a result, the OR circuit 268 outputs an H level signal corresponding to one rising period of the enable signals Ena0-3.

  The AND circuit 270 inputs the outputs of the register LT0 and the OR circuit 268, and outputs a logical product of these to the first level shifter 280 as an enable signal Ena. That is, when 1 is stored in LT0, AND circuit 270 outputs an H level signal corresponding to one rising period of enable signals Ena0-3.

  The AND circuit 272 receives the inverted value of the register LT0 and the disable signal Dis from the control unit 140, and outputs a logical product of these to the OR circuit 274.

  The OR circuit 274 receives the reset signal Rst from the AND circuit 272 and the control unit 140, and inputs the logical sum of these to the first level shifter 280 as a disable signal.

  The first level shifter 280 is connected to the AND circuit 270, the OR circuit 274, and the second level shifter 290, receives the enable signal Ena from the AND circuit 270, and receives the disable signal Dis from the OR circuit 274. After the voltage level is converted, the corresponding enable signal Ena-i and disable signal Dis-i are output to the second level shifter 290.

  For example, the first level shifter 280 outputs a 5V enable signal Ena-i in response to receiving an enable signal Ena having an H level of 1.8V, and inputs a disable signal Dis having an H level of 1.8V. In response to this, the 5V disable signal Dis-i is output.

  The second level shifter 290 is connected to the first level shifter 280 and the electron beam generation source 212, receives the precharge signal HVpchg from the control unit 140, receives the enable signal Ena-i from the first level shifter 280, and receives the precharge signal HVpchg. Accordingly, a drive voltage higher than the enable signal Ena-i is output to the electron beam generation source 212.

  For example, the second level shifter 290 receives a power supply voltage VH of 20 V and a reference voltage VL of 0 V, and outputs a driving voltage of H level to the electron beam generation source 212 when a precharge signal is input from the precharge signal HVpchg. . Further, the second level shifter 290 outputs an L level driving voltage to the electron beam generation source 212 from when the enable signal Ena-i from the first level shifter 280 is input until the precharge signal HVpchg is input again. To do. Further, the second level shifter 290 does not output the L level drive voltage to the electron beam generation source 212 during the period when the disable signal Dis-i is input.

  FIG. 7 shows the configuration of the second level shifter 290. The second level shifter 290 receives the power supply voltage VH and the reference voltage VL, receives the precharge signal HVpchg from the controller 140, and receives the enable signal Ena-i and the disable signal Dis-i from the first level shifter 280. The drive voltage Vout is supplied to the electron beam generation source 212. The second level shifter 290 includes a switch Tr1, a switch Tr2, a switch Tr3, a switch Tr4, a switch Tr5, and a switch Tr6.

  The switch Tr1 may be a semiconductor switch, for example, an NMOS transistor in the present embodiment. The switch Tr1 has a gate connected to the first level shifter 280 and inputs an enable signal Ena-i, a drain connected to the switch Tr3 and the drive voltage Vout, and a drain connected to the switch Tr4 and the switch Tr6 via a resistor. , The source is connected to the reference potential VL.

  The switch Tr2 may be a semiconductor switch, for example, an NMOS transistor in the present embodiment. The switch Tr2 has a gate connected to the first level shifter 280 and inputs a disable signal Dis-i, a drain connected to the switch Tr4, a drain connected to the switches Tr3 and Tr5 via a resistor, and a source Connected to the reference potential VL.

  The switch Tr3 may be a semiconductor switch, for example, a PMOS transistor in the present embodiment. The switch Tr3 has a gate connected to the switches Tr2 and Tr4 via resistors, a source connected to the power supply voltage VH, a drain connected to the switch Tr1 and the drive voltage Vout, and a drain connected to the switches Tr2 and Trout via the resistors. Connected to Tr4.

  The switch Tr4 may be a semiconductor switch, for example, a PMOS transistor in the present embodiment. The switch Tr4 has a gate connected to the switch Tr6, a gate connected to the switches Tr1 and Tr3 via resistors, a source connected to the power supply voltage VH, a drain connected to the switch Tr2, and a drain connected to the resistor Via the switch Tr3 and the switch Tr5.

  The switch Tr5 may be a semiconductor switch, for example, a PMOS transistor in the present embodiment. In the switch Tr5, the gate is connected to the switch Tr6, the precharge signal HVpchg is input from the control unit 140, the source is connected to the power supply voltage VH, the drain is connected to the switch Tr3, and the drain is further connected to the switch Tr2 via a resistor. And connected to the switch Tr4.

  The switch Tr6 may be a semiconductor switch, for example, a PMOS transistor in the present embodiment. The switch Tr6 has a gate connected to the switch Tr5 to form a current mirror circuit with the switch Tr5. The switch Tr6 has a gate connected to the control unit 140 and inputs the precharge signal HVpchg from the control unit 140, a source connected to the power supply voltage VH, a drain connected to the switch Tr4, and a drain connected to the resistor. Via the switch Tr1 and the switch Tr3.

  When the precharge signal HVpchg is at the H level, the switches Tr5 and Tr6 are turned off. When the enable signal Ena-i is input in this state, the switch Tr1 is turned on, and the source side of the switch Tr1 is connected to the reference potential VL via the switch Tr1, so that the gate of the switch Tr4 becomes L level and the switch Tr4 is turned on. As a result, the gate of the switch Tr3 is connected to the power supply voltage VH via the switch Tr4, and the switch Tr3 is turned off. As a result, in the second level shifter 290, the drive voltage Vout decreases to the reference potential VL.

  In this way, the second level shifter 290 uses the switches Tr1 to Tr4 to drive the high voltage (for example, 20V) according to the rise of the enable signal Ena-i from the low voltage (for example, 5V) control unit 140. Vout is lowered. The electron beam generation source 212 outputs an electron beam in response to the fall of the drive voltage Vout. The second level shifter 290 disables the output of the drive voltage Vout by the disable signal Dis-i from the control unit 140.

  The second level shifter 290 turns on the switches Tr5 and Tr6 and raises the drive voltage Vout in response to the fall of the precharge signal HVpchg. The second level shifter 290 prevents the through current from flowing from the power supply voltage VH to the reference potential VL by controlling on / off of the switches Tr3 and Tr4 by the switches Tr5 and Tr6.

  As described above, according to the electron beam irradiation apparatus 1000 of the present embodiment shown in FIGS. 1 to 7, the irradiation data and the output time of the electron beam are stored in the registers LT0 to LT2 of the drive circuit 220 of the plurality of electron beam generation sources 212. To do. Therefore, according to the electron beam irradiation apparatus 1000, an optimal electron beam output time can be set for each electron beam generation source 212, so that the surface electron beam source 200 has an electron for each electron beam generation source 212. An electron beam having no variation in emission intensity (current density) can be output, and the object 10 can be irradiated with an electron beam having a uniform dose. According to the electron beam irradiation apparatus 1000 of the present embodiment, the surface electron beam source 200 having a variation in the output electron beam can be used for exposure of an object, so that the mass productivity and manufacturing cost of the electron beam irradiation apparatus can be reduced. Can be improved.

  FIG. 8 shows a processing flow of the electron beam irradiation method according to the present embodiment. The electron beam irradiation apparatus 1000 draws a predetermined drawing pattern on the object 10 by executing the processes from S102 to S112.

  First, in S102, the control unit 140 sequentially drives the plurality of electron beam generation sources 212 of the electron beam irradiation unit 100, and causes each electron beam generation source 212 to output an electron beam. Here, the control unit 140 may cause each electron beam of the plurality of electron beam generation sources 212 to output an electron beam with the same output time.

  Next, in S <b> 104, the measurement unit 130 measures the intensity of the electron beam output from each electron beam generation source 212. For example, the measurement unit 130 measures the intensity of the electron beam output from the electron beam generation source 212 by the electron beam detector, for example, using a microammeter. The measurement unit 130 supplies the measurement result of the electron beam intensity to the control unit 140.

  Next, in S106, the control unit 140 sets the electron beam output time of each electron beam generation source 212 according to the intensity of the electron beam output from the electron beam generation source 212 measured by the measurement unit 130.

  For example, the control unit 140 adjusts the electron beam output times of the plurality of electron beams with respect to a predetermined electron beam output time according to the intensities of the plurality of electron beams measured by the measurement unit 130. Thus, variation in irradiation dose is reduced. Specifically, the control unit 140 may set a short electron beam output time for the measured electron beam having a high output intensity and may set a long electron beam output time for an electron beam having a low output intensity. . As an example, the control unit 140 may set an electron beam output time that is inversely proportional to the measured output intensity for each electron beam.

  Further, for example, the control unit 140 determines a predetermined electron beam output time based on a drawing pattern irradiated within a predetermined range with respect to an irradiation position where one electron beam is irradiated onto the object 10. On the other hand, the difference in the optimum exposure time of each electron beam due to the proximity effect of the drawing pattern is compensated by adjusting the electron beam output time for outputting the one electron beam.

  As an example, the control unit 140 applies the predetermined electron beam output time to a predetermined electron beam output time based on a drawing pattern of an adjacent electron beam adjacent to an electron beam whose irradiation position is irradiated to the object 10. The electron beam output time for outputting the electron beam may be adjusted. Specifically, the control unit 140 may reduce the electron beam output time of one electron beam as the number of the plurality of electron beams arranged adjacent to each other in a predetermined range is larger.

  As another example, the control unit 140 includes a drawing pattern irradiated with a single electron beam within a predetermined range with respect to an irradiation position where the object 10 is irradiated, the object 10, and a resist on the object 10. The electron beam output time of the one electron beam may be adjusted with respect to a predetermined electron beam output time based on the above-mentioned types.

  The control unit 140 supplies the set value of the adjusted electron beam output time to the plurality of drive circuits 220 of the electron beam irradiation unit 100, and sets the set value of the electron beam output time to the registers LT1 and LT2 of the drive circuit 220. Write.

  Next, in S108, the control unit 140 determines whether there is drawing pattern data to be drawn in the storage unit 120 or the like. If there is drawing pattern data, the control unit 140 advances the process to S110, and if there is no drawing pattern data, ends the process.

  Next, in S <b> 110, the control unit 140 supplies irradiation data included in the drawing pattern data to the plurality of drive circuits 220 of the electron beam irradiation unit 100. For example, the control unit 140 writes the irradiation pattern in the register LT0 of the drive circuit 220. Further, the control unit 140 supplies an instruction to the stage unit 110 so that the stage unit 110 drawn by an electron beam moves by one dot.

  Next, in S <b> 112, the electron beam irradiation unit 100 irradiates the object 10 with an electron beam and draws a drawing pattern on the object 10. Specifically, the drive circuit 220 supplies the reference potential VL to the drive voltage Vout to the electron beam generation source 212 if the value written in the register LT0 is 1, and supplies the drive voltage Vout to the drive voltage Vout if the value is 0. Supply voltage VH. Further, the drive circuit 220 supplies the reference potential VL as the drive voltage Vout to the electron beam generation source 212 for a predetermined period according to the enable signals Ena0 to Ena3 selected by the values written in the registers LT1 and LT2. .

  The stage unit 110 sequentially moves the irradiation region of the electron beam on the object 10 by moving the object 10 based on the drawing pattern data. The control unit 140 returns the process to S108.

  As described above, according to the electron beam irradiation method of the present embodiment, the electron beam irradiation apparatus 1000 determines the output times of the plurality of electron beam generation sources 212 before drawing the object 10 according to the intensity of the electron beam. Set to the registers LT1 and LT2 of the drive circuit 220.

  As a result, the electron beam irradiation apparatus 1000 can output an optimum amount of electron beams for each electron beam generation source 212 and reduce unevenness in the exposure amount due to variations in output intensity of the plurality of electron beam generation sources 212. To do. Therefore, the electron beam irradiation apparatus 1000 can expose the object 10 with high throughput and high accuracy by using a plurality of electron beams.

  FIG. 9 shows signal waveforms of the drive circuit 220 according to the present embodiment in S106 and S110. In S <b> 106, the control unit 140 serially outputs the electron beam output time data a <b> 1 to an to n (n is an integer of 1 or more) drive circuits 220 based on the data signal SRdin. Accordingly, values corresponding to the data a1 to an are set in the shift registers SR of the n drive circuits 220.

  Here, at time t1, the control unit 140 raises the register designation signal Md0 output in parallel to each drive circuit 220 to H level, sets the register designation signal Md1 to L level, and applies a rectangular pulse to the write signal Wr. When output, the data a 1 to an stored in the shift registers SR of the n drive circuits 220 are written to the register LT 1 of each drive circuit 220. For example, data ai is written in the register LT1 of the drive circuit 220 that is i-th (i is an integer of 1 to n) from the control unit 140.

  Next, the control unit 140 serially outputs the electron beam output time data b <b> 1 to bn to the n drive circuits 220 based on the data signal SRdin. Accordingly, values corresponding to the data b1 to bn are set in the shift registers SR of the n drive circuits 220.

  Here, at time t2, the control unit 140 causes the register designation signal Md0 output in parallel to each drive circuit 220 to fall to L level, raises the register designation signal Md1 to H level, and causes the write signal Wr to be rectangular. When the pulse is output, the data b1 to bn stored in the shift registers SR of the n drive circuits 220 are written to the register LT2 of each drive circuit 220.

  For example, the control unit 140 writes the data bi into the register LT2 of the drive circuit 220 that is i-th farthest from the control unit 140. As described above, the control unit 140 writes the electron beam output time data a <b> 1 to n and b <b> 1 to n to the registers LT <b> 1 and LT <b> 2 of the n drive circuits 220.

  In S110, the control unit 140 serially outputs the electron beam irradiation data c1 to cn to the n drive circuits 220 based on the data signal SRdin. Thus, values corresponding to the data c1 to cn are set in the shift registers SR of the n drive circuits 220.

  Here, at time t3, when the control unit 140 sets the register designation signal Md0 output in parallel to each drive circuit 220 to L level, sets the register designation signal Md1 to L level, and outputs a rectangular pulse to the write signal Wr. , Data c1 to cn stored in the shift registers SR of the n drive circuits 220 are written to the register LT0 of each drive circuit 220.

  For example, the control unit 140 writes the data ci to the register LT0 of the drive circuit 220 that is i-th farthest from the control unit 140. In this way, the control unit 140 writes the electron beam irradiation data c1 to n to the register LT0 of the n drive circuits 220.

  FIG. 10 shows each signal waveform of the drive circuit 220 according to the present embodiment in S112. In S112, the control unit 140 outputs the precharge signal HVpchg in parallel to the n drive circuits 220. As a result, the second level shifter 290 of the drive circuit 220 outputs the drive voltage Vout at the H level to the corresponding electron beam generation source 212.

  Next, the controller 140 supplies a plurality of enable signals Ena0 to Ena3 having a plurality of different rising periods to each drive circuit 220. For example, the control unit 140 supplies the drive circuit 220 with a plurality of enable signals Ena0 to Ena3 that rise at different timings and fall simultaneously.

  As an example, when the rising period of Ena0 is 100%, the control unit 140 has a plurality of enable signals Ena0 that have a rising period of Ena1 of 90%, a rising period of Ena2 of 80%, and a rising period of Ena3 of 70%. -Ena3 is supplied to the drive circuit 220.

  The drive circuit 220 supplies any one of the plurality of enable signals Ena0 to Ena3 to the first level shifter 280 according to the stored values of the registers LT1 and LT2. The first level shifter 280 supplies the second level shifter 290 with an enable signal Ena-i corresponding to one of the supplied enable signals Ena0 to Ena3.

  The second level shifter 290 switches the switches Tr1 and Tr4 from off to on in response to the rise of the enable signals Ena0 to Ena3. As a result, the second level shifter 290 causes the drive voltage Vout output to the electron beam generation source 212 to fall. The electron beam generation source 212 outputs an electron beam corresponding to the fall of the drive voltage Vout.

  Next, the second level shifter 290 switches the switch Tr1 from on to off in response to the fall of the enable signals Ena0 to Ena3. The second level shifter 290 switches the switch Tr4 from on to off in response to the input of the precharge signal HVpchg from the control unit 140 again. As a result, the second level shifter 290 raises the drive voltage Vout. As a result, the electron beam generation source 212 stops outputting the electron beam.

  Further, the second level shifter 290 receives the disable signal Dis from the control unit 140 via the first level shifter 280 and turns off the switches Tr2 and Tr3 of the second level shifter 290 in response to the rise of the disable signal Dis. Switch on. Accordingly, the second level shifter 290 prevents the drive voltage Vout from falling due to the input of the enable signals Ena0 to Ena3.

  FIG. 11 shows a modification of the drive circuit 220 of the electron beam irradiation apparatus 1000 according to the present embodiment. In the drive circuit 220 of this modification, the same reference numerals are given to the substantially same operations as those of the drive circuit 220 according to the present embodiment shown in FIG.

  In this modification, the drive circuit 220 may further include an AND circuit 256, an AND circuit 400, a third level shifter 402, a switch 404, a switch 406, and a switch 408. In the present modification, the drive device 219 may include an inspection control unit 410.

  The AND circuit 256 inputs the register specifying signal Md1, the register specifying signal Md0, and the write signal Wr, and outputs a logical product of these to the AND circuit 400. That is, when the register designation signal Md1 and the register designation signal Md0 from the control unit 140 are in the H level and the rising edge of the write signal Wr is input from the control unit 140, the AND circuit 256 sets the H level to the third level shifter 402. Output.

  The AND circuit 400 inputs the output from the shift register SR and the output from the AND circuit 256, and outputs a logical product of these to the third level shifter 402.

  The third level shifter 402 may be the same as the first level shifter 280, receives the output from the AND circuit 400, converts the voltage level of the output, and outputs it to the switch 408. For example, the third level shifter 402 outputs a 5V signal to the switch 408 in response to a signal having an H level of 1.8V being input from the AND circuit 400.

  The switch 404 may be a semiconductor switch, for example, a PMOS transistor in this modification. The switch 404 has a gate connected to the switch 412, a drain connected to the switches 406 and 408, and a source connected to the power supply voltage VH.

  The switch 406 may be a semiconductor switch, and is, for example, a PMOS transistor in this modification. The switch 406 has a gate connected to the switch 404 and the switch 408, a drain connected to the inspection voltage HVout, and a source connected to the drive voltage Vout from the second level shifter.

  The switch 408 may be a semiconductor switch, for example, an NMOS transistor in the present modification. The switch 408 has a gate connected to the output of the third level shifter 402, a drain connected to the switches 404 and 406, and a source connected to the reference potential VL.

  The inspection control unit 410 includes a switch 412 and a switch 414, and controls the output of the inspection voltage HVout by inputting the power supply voltage VH and the reference potential VL.

  The switch 412 may be a semiconductor switch, for example, a PMOS transistor in this modification. In the switch 412, the drain and the gate of the switch 404 are connected to the gate, the gate and the switch 414 are connected to the drain, and the power supply voltage VH is connected to the source.

  The switch 414 may be a semiconductor switch, for example, an NMOS transistor in this modification. In the switch 414, a ground potential via a load resistor and a reference potential via a load resistor are input to the gate, the switches 412 and 404 are connected to the drain, and the reference potential VL is connected to the source.

  The drive circuit 220 of this modification example receives the H-level register designation signal Md1, the register designation signal Md0, and the write signal Wr from the control unit 140 at the time of inspection, and outputs the output of the shift register Sr in response to the third signal. It outputs to the inspection voltage HVout through the level shifter and the switch 408 and the like. For example, the electron beam irradiation apparatus 1000 outputs the inspection voltage HVout to the inspection terminal 354.

  The test voltage HVout of the plurality of drive circuits 220 is commonly connected, and after the control unit 140 resets the drive circuit 220 with the reset signal Rst, both the register designation signals Md0 and Md1 are set to 1, and 1 is set to the data signal SRdin. By outputting and raising the clock signal SRckin, the level of the drive voltage Vout of the first drive circuit 220a is output to the commonly connected test voltage HVout. After that, when the control unit 140 outputs 0 to the data signal SRdin and raises the clock signal SRckin, the data signal SRdin having a value of 1 is sequentially input to the drive circuit 220 that is connected in cascade later, followed by The drive voltages Vout of the plurality of drive circuits 220 are sequentially output to the commonly connected inspection voltage HVout.

  In the present embodiment, the drive circuit 220 receives a plurality of enable signals Ena0 to 3 from the control unit 140. Instead, each of the drive circuits 220 includes the enable signals Ena0 to Ena0 in the drive circuit 220. An exposure time pulse generation circuit for generating 3 may be included.

  Further, instead of this, the surface electron beam source 200 has an exposure time pulse generation circuit in the vicinity of the drive device 219, and the exposure time pulse generation circuit drives a plurality of enable signals Ena0 to 3 at a predetermined timing. It may be supplied to the circuit 220.

  As described above, according to the electron beam irradiation apparatus 1000 of the present modification, the output of the drive circuit 220 is detected by detecting the output from the terminal on the opposite side of the surface on which the electron beam generation source 212 of the electron beam generation device 210 is provided. Operation can be checked. Therefore, according to the electron beam irradiation apparatus 1000 of this modification, the operation of the drive circuit 220 can be inspected without inspecting the electron beam output from the electron beam generation source 212.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The execution order of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior”. It should be noted that they can be implemented in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for the sake of convenience, it means that it is essential to carry out in this order. is not.

  DESCRIPTION OF SYMBOLS 10 Object, 100 Electron beam irradiation part, 110 Stage part, 120 Storage part, 130 Measurement part, 140 Control part, 150 Communication part, 160 Computer part, 200-plane electron beam source, 202 Voltage supply part, 204 Electrode part, 210 Electron beam generating device, 211 substrate, 212 electron beam generating source, 214 recess, 216 polysilicon layer, 215 first insulating film, 218 second insulating film, 219 driving device, 220 driving circuit, 222 electrode section, 224 connecting section, 230 Accelerating electrode, 240 Electron lens, 242 Coil unit, 244 Lens unit, 246 Convergence unit, 248 Buffer amplifier, 250 AND circuit, 252 AND circuit, 254 AND circuit, 256 AND circuit, 260 AND circuit, 262 AND circuit, 264 AND Circuit, 266 AN Circuit, 268 OR circuit, 270 AND circuit, 272 AND circuit, 274 OR circuit, 280 first level shifter, 290 second level shifter, 300 electron emission unit, 310 first electrode unit, 312 opening, 320 second electrode unit, 322 Connection unit, 330 barrier unit, 340 isolation unit, 350 third electrode unit, 352 conductive film, 354 inspection terminal, 400 AND circuit, 402 third level shifter, 404 switch, 406 switch, 408 switch, 410 inspection control unit, 412 Switch, 414 switch, 1000 Electron beam irradiation device

Claims (9)

An electron beam irradiation apparatus for irradiating an object with a drawing pattern by a plurality of electron beams,
A planar electron beam source in which a plurality of electron beam generation sources for outputting a plurality of electron beams are arranged;
A controller that adjusts an electron beam output time of each of the plurality of electron beam generation sources;
An electron beam irradiation apparatus comprising:   2. The electron according to claim 1, wherein the control unit adjusts the electron beam output time of each of the plurality of electron beam generation sources according to the intensity of each of the plurality of electron beams to reduce variation in irradiation amount. Beam irradiation device.   The control unit sets an electron beam output time for outputting the one electron beam based on a drawing pattern irradiated within a predetermined range with respect to an irradiation position where the object is irradiated with the one electron beam. The electron beam irradiation apparatus of Claim 1 or 2 to adjust.   The control unit adjusts an electron beam output time for outputting the one electron beam based on a drawing pattern of an adjacent electron beam adjacent to the electron beam whose irradiation position is irradiated to the object. 3. The electron beam irradiation apparatus according to 3.   The controller controls the electron of the one electron beam based on the drawing pattern and the type of the object irradiated within a predetermined range with respect to the irradiation position where the object is irradiated with the one electron beam. The electron beam irradiation apparatus according to claim 3 or 4, wherein the beam output time is adjusted. A measuring unit that measures the intensity of an electron beam output from each of the plurality of electron beam generation sources;
The electron beam irradiation apparatus according to any one of claims 1 to 5, wherein the control unit adjusts an electron beam output time of each of the plurality of electron beam generation sources based on a measurement result of the measurement unit. A plurality of drive circuits for driving the plurality of electron beam generation sources;
The electron beam irradiation apparatus according to any one of claims 1 to 6, wherein the control unit sets a set value of an electron beam output time for each of the plurality of drive circuits. The plurality of drive circuits are divided into a plurality of groups and cascaded for each group,
8. The electron beam according to claim 7, wherein the control unit sequentially outputs irradiation data and a set value to two or more drive circuits included in each of the plurality of groups and writes the irradiation data and setting values in the two or more drive circuits. 9. Irradiation device. The drive device including the plurality of drive circuits is bonded to the electron beam generation device including the plurality of electron beam generation sources,
At least one of the plurality of drive circuits outputs a drive signal supplied from the drive circuit to a corresponding electron beam generation source to a surface of the drive device opposite to the electron beam generation device at the time of inspection. The electron beam irradiation apparatus according to claim 7, further comprising an inspection terminal.

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