JPWO2011001678A1 - 露光条件設定方法および表面検査装置 - Google Patents
露光条件設定方法および表面検査装置 Download PDFInfo
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- JPWO2011001678A1 JPWO2011001678A1 JP2011520790A JP2011520790A JPWO2011001678A1 JP WO2011001678 A1 JPWO2011001678 A1 JP WO2011001678A1 JP 2011520790 A JP2011520790 A JP 2011520790A JP 2011520790 A JP2011520790 A JP 2011520790A JP WO2011001678 A1 JPWO2011001678 A1 JP WO2011001678A1
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- Prior art keywords
- exposure
- pattern
- wafer
- illumination
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
1 表面検査装置
10 ステージ 20 照明系(照明部)
30 受光系 35 撮像装置(検出部)
40 画像処理部
50 FEMウェハ(基準基板)
Claims (6)
- 表面に半導体パターンを有する基板に照明光を照射する照明部と、前記照明光が照射された前記基板の複数の前記半導体パターンからの回折光を検出する検出部とを備え、前記検出部に検出された前記回折光の情報から前記基板の表面を検査するように構成された表面検査装置を用いて、所定の露光が行われる被露光基板に対する露光条件を設定する露光条件設定方法であって、
前記照明部を利用して露光特性が既知の基準基板の表面に照明光を照射する照明工程と、
前記検出部を利用して前記照明光が照射された前記基準基板の複数の前記半導体パターンからの回折光を検出する検出工程と、
前記検出した前記回折光の輝度のバラツキに基づいて前記露光条件を設定する設定工程とを有することを特徴とする露光条件設定方法。 - 前記設定工程において、前記輝度のバラツキが極大もしくは極大近傍となる前記露光の条件値を前記露光条件における限界値として設定することを特徴とする請求項1に記載の露光条件設定方法。
- 前記設定工程において、前記限界値に基づいて設定された前記露光条件の範囲の中央値を前記露光条件における代表値として設定することを特徴とする請求項2に記載の露光条件設定方法。
- 前記半導体パターンとして、繰り返し配列された線状のラインパターンまたは孔状のホールパターン、および前記ラインパターンまたは前記ホールパターンにより構成されるメモリマットを囲むように繰り返し配列されたガードパターンが形成され、
前記基準基板の複数の前記半導体パターンがそれぞれ複数の露光条件で露光されて形成されることを特徴とする請求項1から3のいずれか一項に記載の露光条件設定方法。 - 所定の露光によって表面に半導体パターンが形成された基板に照明光を照射する照明部と、
前記照明光が照射された前記基板の複数の前記半導体パターンからの回折光を検出する検出部と、
前記検出した複数の前記半導体パターンからの回折光の輝度のバラツキに基づいて前記露光の条件を求める演算を行う演算部とを備えて構成されることを特徴とする表面検査装置。 - 前記所定の露光により前記半導体パターンを露光する露光装置と前記露光の条件に関する電気的通信を行う通信部をさらに備えることを特徴とする請求項5に記載の表面検査装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009156654 | 2009-07-01 | ||
JP2009156654 | 2009-07-01 | ||
PCT/JP2010/004317 WO2011001678A1 (ja) | 2009-07-01 | 2010-06-30 | 露光条件設定方法および表面検査装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2011001678A1 true JPWO2011001678A1 (ja) | 2012-12-10 |
Family
ID=43410765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011520790A Pending JPWO2011001678A1 (ja) | 2009-07-01 | 2010-06-30 | 露光条件設定方法および表面検査装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8665430B2 (ja) |
EP (2) | EP2450944A4 (ja) |
JP (1) | JPWO2011001678A1 (ja) |
KR (1) | KR101493133B1 (ja) |
CN (1) | CN102473600A (ja) |
TW (1) | TW201115624A (ja) |
WO (1) | WO2011001678A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103283002B (zh) * | 2010-10-26 | 2016-06-15 | 株式会社尼康 | 检查装置、检查方法、曝光方法、以及半导体元件的制造方法 |
JPWO2013081072A1 (ja) * | 2011-11-29 | 2015-04-27 | 株式会社ニコン | 測定装置、測定方法および半導体デバイス製造方法 |
JP2015088496A (ja) * | 2012-02-23 | 2015-05-07 | 株式会社ニコン | 評価装置、評価方法、およびデバイス製造方法 |
US9036142B2 (en) * | 2012-05-09 | 2015-05-19 | Seagate Technology Llc | Surface features mapping |
US9212900B2 (en) * | 2012-08-11 | 2015-12-15 | Seagate Technology Llc | Surface features characterization |
US9377394B2 (en) * | 2012-10-16 | 2016-06-28 | Seagate Technology Llc | Distinguishing foreign surface features from native surface features |
TWI614586B (zh) * | 2012-12-20 | 2018-02-11 | Nikon Corp | 評估方法及裝置、加工方法、以及曝光系統 |
CN105700290B (zh) * | 2014-11-27 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | 光罩的制作方法 |
KR102599657B1 (ko) | 2016-08-17 | 2023-11-08 | 삼성전자주식회사 | 반도체 웨이퍼 검사 방법 및 시스템, 및 이를 이용한 반도체 소자의 제조 방법 |
TW202142863A (zh) * | 2020-04-10 | 2021-11-16 | 荷蘭商Asml荷蘭公司 | 處理用於晶圓檢測之參考資料 |
CN112461853B (zh) * | 2020-10-30 | 2021-07-27 | 珠海市奥德维科技有限公司 | 自动对焦方法及系统 |
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JP2008112889A (ja) * | 2006-10-31 | 2008-05-15 | Matsushita Electric Ind Co Ltd | フォーカス測定方法、半導体装置の製造方法、および露光システム |
JP2008294094A (ja) * | 2007-05-23 | 2008-12-04 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
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-
2010
- 2010-06-30 TW TW099121354A patent/TW201115624A/zh unknown
- 2010-06-30 WO PCT/JP2010/004317 patent/WO2011001678A1/ja active Application Filing
- 2010-06-30 JP JP2011520790A patent/JPWO2011001678A1/ja active Pending
- 2010-06-30 EP EP10793851.6A patent/EP2450944A4/en not_active Withdrawn
- 2010-06-30 KR KR1020127001534A patent/KR101493133B1/ko active IP Right Grant
- 2010-06-30 EP EP14155012.9A patent/EP2738609A3/en not_active Withdrawn
- 2010-06-30 CN CN2010800259035A patent/CN102473600A/zh active Pending
-
2011
- 2011-12-30 US US13/340,742 patent/US8665430B2/en not_active Expired - Fee Related
-
2014
- 2014-01-16 US US14/157,370 patent/US20140192366A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US8665430B2 (en) | 2014-03-04 |
EP2450944A1 (en) | 2012-05-09 |
TW201115624A (en) | 2011-05-01 |
EP2738609A2 (en) | 2014-06-04 |
WO2011001678A1 (ja) | 2011-01-06 |
EP2738609A3 (en) | 2018-01-17 |
KR101493133B1 (ko) | 2015-02-12 |
EP2450944A4 (en) | 2017-12-27 |
US20120099120A1 (en) | 2012-04-26 |
US20140192366A1 (en) | 2014-07-10 |
KR20120030150A (ko) | 2012-03-27 |
CN102473600A (zh) | 2012-05-23 |
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