JPWO2008075749A1 - Exposure method and apparatus, and substrate holding apparatus - Google Patents

Abstract

In this exposure apparatus, the movable part for driving the substrate can be simplified or miniaturized, and exposure can be performed in a state where the flatness of the surface of the substrate is kept high as necessary. In an exposure apparatus that exposes a wafer (W) with exposure light (IL) through a projection optical system (PL), a glass plate (29) disposed opposite to the wafer (W), and a glass plate (29) A wafer pack (28) having a mechanism for holding the wafer (W) in close contact with the bottom surface of the wafer (W), and a glass plate (29) disposed under the projection optical system (PL) are attracted by electrostatic force. And an electrostatic bearing member (37) having an electrode member (75) for holding and an XY coil carrier (40) for magnetically driving the wafer pack (28) in the lateral direction.

Description

  The present invention relates to an exposure technique for irradiating a substrate with exposure light to expose the substrate, a technique for holding the substrate, and a device manufacturing technique using the exposure technique, for example, a semiconductor integrated circuit, a liquid crystal display element, or The present invention is applicable when a pattern such as a mask is transferred onto a substrate in a lithography process for manufacturing various devices such as a thin film magnetic head.

  For example, in a lithography process for manufacturing a semiconductor integrated circuit, a pattern formed on a reticle (or photomask or the like) is applied to a wafer (or glass plate or the like) coated with a photoresist as a substrate via a projection optical system. In order to transfer to each shot area, an exposure apparatus such as a batch exposure type projection exposure apparatus such as a stepper and a scanning exposure type projection exposure apparatus such as a scanning stepper is used. Among these, in an exposure apparatus that uses a wafer as an exposure target, positions in two orthogonal directions (X direction and Y direction) in a plane perpendicular to the optical axis of the projection optical system of the wafer, and positions in the optical axis direction thereof. A wafer stage is provided for controlling the (focus position) and the inclination angle (leveling) around two orthogonal directions.

A conventional wafer stage generally has a Z stage for controlling a focus position and an inclination angle of a wafer on an XY stage movably mounted on a surface plate, and a back surface of the wafer by vacuum chucking or electrostatic chucking. The wafer holder to hold was installed and comprised.
Further, as a wafer transfer device, a transfer device that drives the wafer in a direction along the surface of the wafer (transfer direction) by an induced current while the wafer is held in a non-contact state from above by an electrostatic force (for example, patent document) 1), and a transfer device that drives the wafer in the transfer direction by changing the electrostatic field distribution from above in a state where the wafer is held in a non-contact state by electrostatic force and gas blowing from above (for example, patents) Document 2) has been proposed. In addition, a transfer device that drives the wafer in the transfer direction by changing the electrostatic field distribution on the back side of the wafer (see, for example, Patent Document 3) has also been proposed.
JP-A-9-330975 Japanese Patent Laid-Open No. 63-245932 JP 2001-250857 A

  In the wafer stage of the conventional exposure apparatus, the movable part placed on the surface plate has all of the drive mechanism as the XY stage, the wafer suction holding mechanism, and the mechanism for controlling the focus position of the wafer. In order to increase the throughput of the exposure process, it is difficult to drive the movable part at a higher speed while suppressing the occurrence of vibration in order to increase the exposure process throughput.

In general, the surface of the wafer, which is an exposed surface, is polished and has good flatness, but the flatness of the back surface is inferior to that of the front surface. Therefore, in a mechanism that sucks and holds a wafer on the back surface of the wafer, such as a conventional sucking and holding mechanism, the flatness of the surface of the wafer may be reduced during exposure.
Furthermore, since the projection optical system is present above the wafer in the exposure apparatus, the conventional transfer apparatus that transfers the wafer in a non-contact manner from above using an electrostatic force or the like can be easily applied to the exposure apparatus as it is. There was a problem that I could not. Also, a conventional transfer device that drives a wafer by changing the electrostatic field distribution on the back side of the wafer requires a separate mechanism for controlling the focus position of the wafer with high accuracy.

In view of such problems, the present invention can simplify or downsize a movable part for driving a substrate such as a wafer to be exposed, and maintain a high flatness of the surface of the substrate as necessary. It is a first object of the present invention to provide an exposure technique and a device manufacturing technique that can perform exposure or conveyance.
A second object of the present invention is to provide a substrate holding technique that can be used in the exposure technique and can hold the substrate in a state where the flatness of the surface of the substrate to be exposed is kept high.

A first exposure method according to the present invention is an exposure method of exposing a substrate by irradiating the substrate with exposure light, the step of transporting the substrate to an exposure position and the step of exposing the substrate with the exposure light. In at least a part of the time, at least a part of the surface of the substrate is brought into close contact with the flat surface to hold the substrate.
According to a first exposure apparatus of the present invention, in an exposure apparatus that irradiates a substrate with exposure light to expose the substrate, a predetermined member on which a flat surface is formed, and the substrate on the flat surface of the predetermined member. And a holding mechanism that holds at least a part of the surface and holds the substrate.

Next, in a second exposure method according to the present invention, in the exposure method in which the substrate is exposed by irradiating the substrate with exposure light through an optical member, a first electrostatic field is generated on the surface side of the substrate, A second electrostatic field is generated on the back side of the substrate, the substrate is driven by the second electrostatic field in a direction crossing the direction in which the exposure light is irradiated, and the substrate is exposed by the first electrostatic field. It is driven in the direction of light irradiation.
According to a second exposure apparatus of the present invention, in an exposure apparatus that irradiates a substrate with exposure light through an optical member to expose the substrate, the second exposure apparatus is disposed on the surface side of the substrate and generates a first electrostatic field. 1 drive part and the 2nd drive part which is arranged on the back side of the substrate, and generates the 2nd electrostatic field, intersects the direction where the exposure light is irradiated to the substrate by the 2nd electrostatic field And the first electrostatic field drives the substrate in the direction in which the exposure light is irradiated.

A substrate holding apparatus according to the present invention is a substrate holding apparatus for holding a substrate exposed through an optical member with exposure light, the predetermined member having a flat surface, and the flat member of the predetermined member. And a holding mechanism for holding the substrate by bringing at least a part of the surface of the substrate into close contact with the surface.
A device manufacturing method according to the present invention uses the exposure method or exposure apparatus of the present invention.

According to the first exposure method and apparatus of the present invention, since the substrate to be exposed is held from the front surface side, the movable part arranged on the back surface side of the substrate can be simplified or downsized. Further, even when the flatness of the back surface side of the substrate is inferior to that of the front surface side, exposure or conveyance can be performed in a state where the flatness of the surface of the substrate is maintained high.
Further, according to the second exposure method and apparatus of the present invention, the substrate is driven in the direction along the surface by the second electrostatic field, and the position (high height) of the exposure direction of the substrate is driven by the first electrostatic field. With the function sharing that controls the thickness of the substrate, the movable portion disposed on the back side of the substrate can be simplified or miniaturized, and the substrate can be driven almost three-dimensionally with high accuracy in a non-contact state. In addition, since the substrate is not held following the back surface of the substrate, even when the flatness of the back surface is inferior, the flatness of the surface of the substrate is increased during exposure by controlling the first electrostatic field or the like. Can be maintained.
According to the substrate holding apparatus of the present invention, it can be used as a substrate holding mechanism of the first exposure apparatus of the present invention, and the substrate can be held in a state where the flatness of the surface of the substrate is kept high.

1 is a perspective view showing an exposure apparatus used in a first embodiment of the present invention. FIG. 2 is a partially cutaway view showing a wafer drive mechanism of the exposure apparatus of FIG. 1. FIG. 3 is an exploded perspective view showing the wafer pack 28 of FIG. 2. FIG. 3 is a diagram illustrating an example of an assembly process of the wafer pack 28 of FIG. 2. FIG. 3A is a plan view illustrating an example of a magnetization pattern of a magnetic plate 62 on the wafer base 41 in FIG. 2, and FIG. 3B is a diagram illustrating a part of another example of the magnetization pattern of the magnetic plate 62. (A) is a plan view showing an example of movement of the wafer pack 28 and the XY coil carrier 40 when the wafer is scanned in the Y direction, and (B) is a wafer pack 28 and XY coil when the wafer is stepped in the X direction. 4 is a plan view showing an example of movement of a carrier 40. FIG. FIG. 2 is a plan view showing an example of a wafer side stage system when the exposure apparatus of FIG. 1 is a double stage system. (A) is a view in which a part of an exposure apparatus that electrostatically attracts the wafer surface to the bottom surface of the glass plate 29 is cut away, and (B) is a part of the wafer surface on the bottom surface of the holding member 86. It is the figure which notched the part which shows the principal part of the exposure apparatus vacuum-adsorbed. It is the figure which notched a part which shows the wafer drive mechanism of the exposure apparatus used in the 2nd Embodiment of this invention. FIG. 10 is a perspective view showing a configuration of a detector 89 for detecting the position of the wafer in FIG. 9. 9A shows the charge distribution of the electrode member 87 on the XY coil carrier 40C side and the charge distribution of the electrode member 88 on the electrostatic bearing member 37 side when the wafer is driven in the −Y direction in the exposure apparatus of FIG. FIG. 9B is a partially cutaway view showing the relationship between the charge distribution of the electrode member 87 on the XY coil carrier 40C side after the wafer moves and the electrostatic bearing member 37 side in the exposure apparatus of FIG. It is the figure which notched the part which shows the relationship with the electric charge distribution of the electrode member 88. FIG.

Explanation of symbols

  R ... reticle, PL ... projection optical system, W ... wafer, 21W ... projection region, 28 ... wafer pack, 29 ... glass plate, 30 ... frame, 33 ... diaphragm, 34 ... magnetic plate, 35 ... buffer member, 36A-36C ... Z actuator, 37 ... electrostatic bearing member, 38 ... compressor, 40, 40A, 40C ... XY coil carrier, 41, 41A ... wafer base, 51 ... main control system, 53, 53A ... stage control system, 62 ... magnetic plate 63X, 63Y ... drive coil, 64 ... first flat motor, 71X, 71Y ... drive coil, 72 ... second flat motor, 75 (75A to 75C) ... electrode member, 87 ... electrode member, 88 ... electrode member, 89 …Detector

[First Embodiment]
A preferred first embodiment of the present invention will be described below with reference to FIGS. In this example, the present invention is applied when exposure is performed by a scanning exposure type exposure apparatus (projection exposure apparatus) including a scanning stepper.
FIG. 1 shows a schematic configuration of an exposure apparatus EX of this example. In FIG. 1, the exposure apparatus EX uses an exposure light source 1 and an exposure light IL (exposure beam) from the exposure light source 1 to transfer a pattern. An illumination optical system 20 that illuminates a reticle R (mask) on which is formed, a reticle stage RST that drives the reticle R, a projection optical system PL that projects an image of the pattern of the reticle R onto a wafer W (substrate), and A wafer drive mechanism for driving the wafer W, a main control system 51 composed of a computer for comprehensively controlling the operation of the entire apparatus, and a processing system for performing various other controls or calculations are provided. An ArF excimer laser light source (wavelength 193 nm) is used as the exposure light source 1. As an exposure light source, an ultraviolet pulse laser light source such as a KrF excimer laser light source (wavelength 247 nm), an F ₂ laser light source (wavelength 157 nm), a harmonic generation light source of a YAG laser, or a harmonic generation of a solid-state laser (semiconductor laser, etc.) An apparatus or a mercury lamp (i-line etc.) can also be used.

  The exposure light IL pulsed from the exposure light source 1 at the time of exposure enters the illumination optical system 20 through a beam transmission optical system (not shown) and the mirror 2, and has a sectional shape through the first lens 3A and the second lens 3B. Is shaped into a predetermined shape, then enters the diffractive optical element 6A fixed to the revolver 5 via the mirror 4, and has a predetermined light amount distribution (circular distribution, annular distribution, 4) on the pupil plane of the illumination optical system 20. Diffracted in multiple directions so as to obtain a pole distribution. The revolver 5 is also provided with diffractive optical elements 6B and 6C having other diffraction characteristics. The main control system 51 controls the rotation angle of the revolver 5 via the drive unit 5a, and switches one of the diffractive optical elements 6A, 6B, etc. on the optical path of the exposure light IL to switch the illumination condition. Can do. The structure and manufacturing method of a diffractive optical element having specific diffraction characteristics are disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 2001-176766 by the present applicant.

  In FIG. 1, for example, the exposure light IL diffracted by the diffractive optical element 6A is condensed by the relay lens 7, passes through the first prism 8 and the second prism 9, and enters the incident surface of the fly-eye lens 10 as an optical integrator. Focused. The exit surface of the fly-eye lens 10 is the pupil plane of the illumination optical system 20, and the exit surface of the diffractive optical element 6 </ b> A and the exit surface of the fly-eye lens 10 (by the combined lens system including the relay lens 7 and the fly-eye lens 10). The pupil plane is almost conjugate (imaging relationship).

  Each of the prisms 8 and 9 is a member that becomes a plane-parallel plate in a circular area centered on the optical axis of the illumination optical system 20, and is a concave and convex cone at the periphery thereof. As a whole, a plane parallel plate is formed. In this case, for example, the light quantity distribution on the exit surface can be adjusted in the radial direction by driving the second prism 9 along the optical axis of the illumination optical system 20 and controlling the distance between the prisms 8 and 9. When there is no need to adjust the light quantity distribution in the radial direction, the prisms 8 and 9 can be omitted. In addition, in order to set the light amount distribution on the exit surface of the fly-eye lens 10 more accurately, apertures 12A to 12D and the like in which a region having a large light amount distribution is formed in the vicinity of the fly-eye lens 10 are formed. The diaphragm plate 11 may be disposed, and the corresponding aperture diaphragm 12A and the like may be disposed on the exit surface of the fly-eye lens 10 according to the distance between the diffractive optical element 6A and the prisms 8 and 9. Even in this case, there is an advantage that the utilization efficiency of the exposure light IL is high.

  The exposure light IL that has passed through the fly-eye lens 10 sequentially passes through a fixed blind (fixed field stop) 17A and a movable blind (movable field stop) 17B through a beam splitter 13 and a relay lens 16A having a low reflectance. The movable blind 17B is disposed on a surface substantially conjugate with the pattern surface (reticle surface) of the reticle R, and the fixed blind 17A is disposed on a surface slightly defocused from the surface conjugate with the reticle surface.

  The fixed blind 17A is used to define the illumination area 21R on the reticle surface as a slit-like area elongated in the non-scanning direction orthogonal to the scanning direction of the reticle R. The movable blind 17B is used to close the illumination region 21R in the scanning direction so that unnecessary portions are not exposed at the start and end of the scanning exposure on the exposure target shot region on the wafer W. . The movable blind 17B is also used to define the center and width of the illumination area 21R in the non-scanning direction. The exposure light IL that has passed through the blinds 17A and 17B illuminates the illumination area 21R of the pattern area of the reticle R with a uniform illuminance distribution through the sub condenser lens 16B, the optical path bending mirror 18, and the main condenser lens 19.

  On the other hand, the exposure light reflected by the beam splitter 13 is received by an integrator sensor 15 made of a photoelectric sensor via a condenser lens 14. The detection information of the integrator sensor 15 is supplied to the exposure amount control system 52, and the exposure amount control system 52 uses the detection information and information on the transmittance of the optical system from the beam splitter 13 to the wafer W that is measured in advance. Then, the energy of the exposure light IL on the wafer W is indirectly calculated. The exposure amount control system 52 oscillates the exposure light source 1 so that an appropriate exposure amount can be obtained on the surface (exposure surface) of the wafer W based on the integrated value of the calculation result and the control information from the main control system 51. And pulse energy and the like are controlled. The illumination optical system 20 includes members from the lenses 3A and 3B to the main condenser lens 19.

  Under the exposure light IL, the pattern in the illumination area 21R of the reticle R is projected onto the wafer W at a projection magnification β (β is, for example, 1/4, 1/5, etc.) via the both-side telecentric projection optical system PL. Is projected onto a projection area 21W (see FIG. 6A) elongated in the non-scanning direction on one shot area. In this example, a wafer W as a substrate to be exposed is obtained by applying a photoresist (photosensitive material) to the surface of a disk-shaped substrate made of a semiconductor such as silicon or SOI (silicon on insulator). Further, the surface of the disk-shaped base material constituting the wafer W (the surface serving as the exposure surface) is polished to a surface with extremely high flatness. As a result, the surface of the wafer W on which the photoresist is applied is also a surface with extremely high flatness. On the other hand, the flatness of the back surface of the disk-shaped base material constituting the wafer W, that is, the back surface of the wafer W is inferior to that of the front surface.

  The projection optical system PL of this example is a refractive system, for example, but a catadioptric system or the like can also be used. Hereinafter, in FIG. 1, the Z-axis is taken in parallel to the optical axis of the projection optical system PL, and along a non-scanning direction orthogonal to the scanning direction of the reticle R and the wafer W during scanning exposure in a plane perpendicular to the Z-axis. A description will be given by taking the X axis and taking the Y axis along the scanning direction. In the following, the directions parallel to the X, Y, and Z axes are referred to as the X, Y, and Z directions, respectively, and the rotation angles (tilt angles) around the axes that are parallel to the X, Y, and Z axes. Are called θX, θY, and θZ, respectively. In this example, the plane parallel to the X axis and the Y axis (XY plane) is almost a horizontal plane, and the −Z direction is vertically downward.

  First, the reticle R is attracted and held on the reticle stage RST, and the reticle stage RST moves on the reticle base 24 at a constant speed in the Y direction. For example, a synchronization error (or a pattern image of the reticle R and the exposure on the wafer W is being exposed). The reticle R is scanned by finely moving in the X direction, the Y direction, and the rotational directions around the Z axis so as to correct the positional deviation amount from the shot area. Laser interferometers 25X and 25Y are arranged to face the reflecting surfaces (or moving mirrors, corner reflectors, etc.) on the side surfaces of reticle stage RST in the X direction and Y direction. The laser interferometers 25X and 25Y irradiate the corresponding reflecting surface with a laser beam (at least one of which is a multi-axis laser beam), for example, at least in the X direction and Y direction of the reticle stage RST with reference to the projection optical system PL. The position is measured with a resolution of about 0.1 nm, the rotation angle θZ is measured, and the measured value is supplied to the stage control system 53 and the main control system 51. The stage control system 53 controls the position and speed of the reticle stage RST via a drive mechanism (such as a linear motor) (not shown) based on the measurement value and the control information from the main control system 51.

  In addition, alignment marks 23A and 23B are formed so as to sandwich the pattern region 22 of the reticle R in the X direction. Above the reticle R, reticle alignment microscopes 26A and 26B for detecting the positions of the alignment marks 23A and 23B are arranged via optical path bending mirrors. Detection signals from the reticle alignment microscopes 26A and 26B are supplied to an alignment signal processing system 54. The alignment signal processing system 54 supplies information on mark positions detected by an image processing method or the like to the main control system 51.

  An annular electrostatic bearing member 37 is installed on the lower peripheral edge of the lens barrel of the projection optical system PL via Z actuators 36A, 36B, and 36C that extend and contract in the Z direction at approximately three equiangular intervals, respectively. A clean and compressed gas of the same type as the gas (for example, dry air, nitrogen, or helium) in the atmosphere through which the exposure light IL passes from the compressor 38 through the flexible pipe 39 to the electrostatic bearing member 37. Have been supplied. Wafers W housed in a wafer pack 28 which is a shallow box-like container are arranged at a predetermined interval on the bottom surface side of the electrostatic bearing member 37. The upper part of the wafer pack 28 is sealed with a rectangular parallel plane plate-like glass plate 29 having a uniform thickness, and the entire surface of the wafer W (exposure surface coated with a photoresist) is the projection optical system PL of the glass plate 29. The wafer W is biased and / or adsorbed on the glass plate 29 side so as to be in close contact with the opposite surface.

The glass plate 29 is formed of a glass material such as quartz or fluorite (CaF ₂ ) that transmits the exposure light IL, and the flatness of the surface of the glass plate 29 on which the surface of the wafer W is in close contact and the surface opposite thereto. Is processed to be equal to or higher than the flatness of the surface of the wafer W, and the wafer W is exposed through the glass plate 29 by the exposure light IL. Note that the higher the refractive index of the object between the optical member at the tip of the projection optical system PL and the surface of the wafer W, the higher the resolution of the image of the projection optical system PL and the greater the depth of focus. The plate 29 is preferably made of a glass material that transmits the exposure light IL and has a refractive index as high as possible with respect to the exposure light IL. Moreover, the glass plate 29 shall be processed with sufficient precision so that the parallelism of the upper surface 29b and the bottom surface 29a appears well.

  The thickness of the glass plate 29 is such that the working distance WD between the projection optical system PL and the wafer W when the glass plate 29 is not present (when there is a member closer to the wafer W than the tip of the projection optical system PL). It is preferable that the thickness be as large as possible under the condition that the distance between the member and the wafer W is approximately a predetermined margin less than the optical path length obtained by multiplying the refractive index np of the glass plate 29. The predetermined margin is the maximum variation in the position in the Z direction when the glass plate 29 and the wafer W are integrally driven in the X direction and the Y direction as will be described later. As an example, the wafer W has a disk shape with a thickness of about 0.75 mm and a diameter of about 200 to 300 mm, and the glass plate 29 has a rectangular shape (which may be a square) that can cover the entire surface of the wafer W. Is a flat plate having a length of about 1 mm.

  2 is a partially cutaway view showing the wafer drive mechanism of the exposure apparatus EX of FIG. 1. In FIG. 2, the Z actuator 36A is an L-shaped first fixed to an electrostatic bearing member 37. As shown in FIG. One member 36A1, a driving element 36A2 such as an electrostrictive element (piezo element or the like) or a magnetostrictive element, which is disposed so as to support the tip portion in the + Z direction and can expand and contract in the Z direction, and the bottom surface of the driving element 36A2 And an L-shaped second member 36A3 connecting the projection optical system PL and the lens barrel of the projection optical system PL. The other Z actuators 36B and 36C are similarly provided with drive elements 36B2 and 36C2, respectively, and the stage control system 53 controls the expansion / contraction amount of the drive elements 36A2 to 36C2, and the three Z-directions of the electrostatic bearing member 37 are arranged in the Z direction. By controlling the position, the position in the Z direction of the electrostatic bearing member 37 with respect to the projection optical system PL and the inclination angles θX and θY can be finely adjusted.

  In the exposure apparatus EX of FIG. 1, the reticle base 24 and the projection optical system PL are supported by different columns (not shown) that are separated in a vibrational manner as an example. In FIG. 2, the second member (36A3, etc.) fixed to the lens barrel of the projection optical system PL in the Z actuators 36A to 36C is vibrationally separated from the column supporting the projection optical system PL. It may be fixed to another column.

  An annular electrode member 75 is embedded in an insulating member such as a synthetic resin on the bottom surface side of the electrostatic bearing member 37. The electrode member 75 is actually divided into three around the optical axis AX of the projection optical system PL at equal angular intervals, and the charges (or relative potentials) of the three divided electrode members 75A, 75B, and 75C. The stage control system 53 can be controlled independently. Further, a large number of blowing holes 37 a are formed through the electrode member 75 to the bottom surface of the electrostatic bearing member 37 (the surface facing the glass plate 29 of the wafer pack 28), and these blowing holes 37 a are formed on the electrostatic bearing member 37. The compressor 38 is connected to the vent hole 37b through a pipe 39. The compressor 38 is connected to the vent hole 37b. In this case, when the stage control system 53 gives an electric charge (for example, positive charge) to the electrode member 75 of the electrostatic bearing member 37, a polarization electric charge (for example, a negative electric charge) having a reverse sign is generated on the upper surface of the glass plate 29. The glass plate 29 is attracted to the electrostatic bearing member 37 side (+ Z direction) by an electrostatic field. Further, the stage control system 53 controls the flow rate of the gas blown from the compressor 38 to the glass plate 29 side (in the −Z direction) through the numerous blowout holes 37 a of the electrostatic bearing member 37. Is prevented from coming into contact with the electrostatic bearing member 37. Accordingly, the wafer pack 28 including the glass plate 29 is held against the electrostatic bearing member 37 so as to float in a non-contact state at a predetermined interval in the Z direction by an air preload electrostatic bearing system.

  Furthermore, since the electrode member 75 is actually divided into three electrode members 75A to 75C, the stage control system 53 individually applies the suction force due to static electricity to the glass plate 29 by the three electrode members 75A to 75C. By controlling, the relative positional relationship consisting of the position (focus position) of the wafer pack 28 in the Z direction with respect to the projection optical system PL and the tilt angles θX and θY (leveling) is adjusted. The driving amount of the wafer pack 28 in the Z direction by the individual electrode members 75A to 75C is, for example, about several nanometers to several tens of nanometers. For this purpose, the light projection unit 61A that projects an image of a predetermined pattern onto the projection area 21W on the wafer W inside the electrostatic bearing member 37 and / or a plurality of measurement points in the vicinity of the projection area 21W, and the light reflected by the wafer W. An autofocus sensor (hereinafter referred to as an AF sensor) 61 that includes a light receiving unit 61B that receives the detection light and detects the positions of the plurality of measurement points in the Z direction is provided.

  The light projecting unit 61A and the light receiving unit 61B are configured such that, for example, only a part of the optical system such as a mirror that bends the detection light is disposed inside the electrostatic bearing member 37. It is arranged on the side of the system PL. By processing the measurement values of the AF sensor 61, the focus position and the inclination angle of the average surface of the projection area 21W on the surface of the wafer W can be obtained, and these measurement results are supplied to the stage control system 53. The As the AF sensor 61, for example, one disclosed in JP-A-8-37149 can be used. The AF sensor 61 measures the position in the Z direction of the measurement point on the upper surface of the glass plate 29 instead of the measurement point on the surface of the wafer W, and subtracts the known thickness of the glass plate 29 from the measurement result. Thus, the position in the Z direction on the surface of the wafer W may be obtained indirectly.

  In this case, as an example, when the focus position and the tilt angle of the test surface measured by the AF sensor 61 are each 0 by test print or the like, the test surface matches the image plane of the projection optical system PL. Thus, the initial offset adjustment of the AF sensor 61 is performed. Therefore, in the stage control system 53 at the time of exposure to the wafer W, the three in the electrostatic bearing member 37 are set so that the focus position and the tilt angle of the projection area 21W of the wafer W measured by the AF sensor 61 become 0, respectively. The suction force with respect to the glass plate 29 by the electrode members 75A to 75C is controlled. As a result, exposure is performed with the surface of the wafer W always in focus on the image plane of the projection optical system PL.

  Further, for example, when a new offset occurs in the measured value of the AF sensor 61, the Z actuators 36A to 36C in FIG. 1 are driven so as to correct the offset, and the focus position and inclination of the electrostatic bearing member 37 are corrected. The corner may be finely adjusted. This facilitates control of the three electrode members 75A to 75C in the electrostatic bearing member 37. The blowing holes 37a of the electrostatic bearing member 37 are divided into three sets of blowing hole groups at equal angular intervals, and the flow rate of the gas blown out from these three sets of blowing hole groups to the wafer pack 28 is independently controlled. Thus, the focus position and leveling angle of the wafer pack 28 may be controlled.

  As shown in FIG. 2, the wafer pack 28 is mounted on a top surface of a frame 30 made of metal, ceramics, or the like having a rectangular frame-like linear expansion coefficient, and on the bottom surface 29a. A thin plate-like diaphragm 33 made of a non-magnetic metal plate fixed to the bottom surface of the frame 30 by welding or the like and having a certain degree of flexibility, and the diaphragm 33 A rectangular flat magnetic plate 34 fixed to the upper surface (the surface facing the wafer W) and having a predetermined magnetization pattern periodically formed between the back surface of the wafer W and the upper surface of the magnetic plate 34. A buffer member 35 having a rectangular shape (or a circular shape similar to the wafer W, etc.) and having flexibility in at least the Z direction is provided. The buffer member 35 is made of, for example, synthetic rubber or synthetic resin (for example, fluorine resin) and is fixed on the magnetic plate 34 by adhesion or the like. The wafer W is urged toward the glass plate 29 from the diaphragm 33 and the magnetic plate 34 via the buffer member 35.

  The diaphragm 33 may not be made of metal, and the material is not particularly limited as long as it has flexibility and can seal the inside (the storage portion of the wafer W). For example, plastic or resin coated with metal may be used. Further, the buffer member 35 is not limited to one formed of synthetic rubber or synthetic resin, and is not particularly limited as long as it generates a force that the wafer W is pressed against the glass plate 29 side. Instead of generating the biasing force by the member itself, the biasing force may be generated mechanically.

  3 is an exploded perspective view showing the wafer pack 28 of FIG. 2. As shown in FIG. 3, a substantially rectangular closed groove 30a is formed on the peripheral edge of the upper surface of the frame 30, and the groove 30a. Inside, a flexible O-ring 32 such as synthetic rubber or synthetic resin is mounted. When the glass plate 29 is placed on the upper surface of the frame 30, a space surrounded by the glass plate 29, the frame 30 and the diaphragm 33 (a space in which the wafer W is stored) is hermetically sealed by the O-ring 32. A number of suction holes 30 c are formed from the inside of the O-ring 32 on the upper surface of the frame 30 to the inner surface of the frame 30. As shown in FIG. 2, an exhaust hole 30d is formed on the side surface in the -Y direction of the frame 30, and an exhaust pipe 31 having an opening / closing valve 31a is connected to the exhaust hole 30d. In this case, the inside of the wafer pack 28 is evacuated to a negative pressure through the exhaust pipe 31 with the valve 31a opened in advance, and the surface of the wafer W is substantially bottom surface 29a of the glass plate 29 also by vacuum suction. It is held in close contact with. At this time, the glass plate 29 is vacuum-sucked to the frame 30 through the numerous suction holes 30c of the frame 30, and the valve 31a is closed in this state. In this example, since the wafer W is also urged to the glass plate 29 side by the buffer member 35, the degree of vacuum in the wafer pack 28 is as long as the glass plate 29 can be stably adsorbed to the frame 30. Good. Further, when the frame 30 is formed of an insulating material (dielectric) or metal, when the glass plate 29 is electrostatically attracted upward as described above, the glass plate 29 and the frame 30 are electrostatically polarized. Also improves the adhesion between the two.

  In FIG. 3, the outer surfaces of the frame 30 in the + X direction and the + Y direction are orthogonal to each other and finished to have a high flatness reflecting surface capable of reflecting the laser beam. A thin movable mirror for reflecting the laser beam may be fixed to the outer surface of the frame 30 in the + X direction and the + Y direction. Further, on the outer surface of the frame 30 in the ± X direction, small flat projections 30b are formed at a plurality of locations, and the frame 30 (wafer pack 28) is formed via the projections 30b by a wafer pack transfer arm 43. ) Can be transported easily. As will be described later, in the process of storing the wafer W in the wafer pack 28, the frame 30 may be inverted (the surface on which the glass plate 29 is placed may be set vertically downward). In practice, 43 holds the convex portion 30b stably so as to sandwich the convex portion 30b vertically. As an example, the arm 43 transports the wafer pack 28 from the vicinity of a wafer cassette (not shown) to below the projection optical system PL of the exposure apparatus EX in FIG.

Note that the frame 30 does not necessarily have to be formed of a highly rigid member. In order to follow the flatness of the glass plate, it may be made of a flexible material (the same diaphragm may be used) like the diaphragm provided on the bottom surface. For example, it may be configured to expand and contract in the Z direction like bellows.
In this case, the posture of the reflecting surface or the movable mirror may become unstable, but it may be fixed to the frame via a mechanism that stabilizes the posture. Further, the movable mirror (reflecting surface) may be attached to the glass plate 29, for example, without being attached to the frame.

  Further, in FIG. 3, the magnetic plate 34 of the wafer pack 28 has, as an example, a magnetizing unit comprising four magnet portions MB1, MB2, MB3, MB4 that are radially magnetized so as to intersect the X axis and the Y axis at 45 °. Magnetization patterns are formed in which MUBs are two-dimensionally arranged in the X and Y directions with periods BX and BY, respectively. Actually, the magnetization pattern is formed with a predetermined thickness on the bottom surface (surface in contact with the diaphragm 33) side of the magnetic plate 34. In practice, the magnetization unit MUB is preferably perpendicularly magnetized (alternately magnetized in the ± Z directions). Moreover, you may comprise the magnetic board 34 as an aggregate | assembly of many independent permanent magnets which make magnet part MB1-MB4 a unit.

  The material of the magnetic plate 34 is a ferromagnetic material such as cobalt, nickel, or neodymium iron boron. Further, the magnetic plate 34 is formed of a magnetic material having an extremely small linear expansion coefficient at room temperature (for example, 23 ° C.) where the exposure apparatus EX of the present example is installed, preferably a magnetic material having a linear expansion coefficient of approximately zero. . An example of a material having a linear expansion coefficient of approximately zero is a super invar magnet. As a result, when the magnetic plate 34 (wafer pack 28) is driven by magnetic force as will be described later, even if the temperature of the magnetic plate 34 rises to some extent, the wafer pack 28 and the wafer W inside thereof are distorted. There is nothing.

Here, an example of a process of storing the wafer W in the wafer pack 28 in the vicinity of a wafer cassette (not shown) in which unexposed wafers are stored will be described with reference to FIG.
First, as shown in FIG. 4 (A), the glass plate 29 is inverted and is vacuum-adsorbed on the support member 44 so that its bottom surface 29a (surface on which the wafer W abuts) faces vertically upward (+ Z direction). It is held by electrostatic adsorption. Next, the wafer transfer arm 45 is lowered after the front surface Wa of the wafer W faces the bottom surface 29a of the glass plate 29 with the back surface of the wafer W held by vacuum suction or the like at the tip of the wafer transfer arm 45. . 4B, after the surface of the wafer W comes into contact with the bottom surface 29a of the glass plate 29, the vacuum suction of the wafer transfer arm 45 is released, and the wafer transfer arm 45 is retracted.

  Thereafter, as shown in FIG. 4C, the frame 30 on which the diaphragm 33, the magnetic plate 34, the buffer member 35, and the O-ring 32 are mounted is inverted by a wafer pack transfer arm (not shown). Then, the arm 30 is lowered and the frame 30 is placed on the bottom surface of the glass plate 29 as shown in FIG. In this state, the wafer W is biased toward the glass plate 29 via the buffer member 35 mainly by the load of the frame 30 and the magnetic plate 34, and the surface of the wafer W is in close contact with the bottom surface of the glass plate 29. ing. Then, the valve 31a of the exhaust pipe 31 of the frame 30 is opened, and the vacuum pump 46 is connected to the exhaust pipe 31 through a flexible pipe 46a. The vacuum pump 46 allows the frame 30, the diaphragm 33, And the gas in the space surrounded by the glass plate 29 is exhausted. As a result, the glass plate 29 is attracted to the frame 30 through the suction holes 30c, and the degree of adhesion of the surface of the wafer W to the bottom surface of the glass plate 29 is increased. In this state, the valve 31a is closed and the piping 46a is removed from the exhaust pipe 31, whereby the wafer W is completely stored in the wafer pack 28. Thereafter, the wafer pack 28 is reversed by the wafer pack transfer arm and transferred to the exposure apparatus EX side in FIG.

  Alternatively, as another method, a vacuum chamber capable of evacuating the chamber is prepared in the transfer path of the wafer W, and after positioning the wafer W in the wafer pack 28 in the chamber, the whole chamber is evacuated. May be. For example, after the positions of the wafer W, the glass plate 29, the frame 30, the diaphragm 33, the magnetic plate 34, the buffer material 35, etc. are determined in the chamber, the air in the chamber is evacuated to make the inside vacuum. Thereafter, the glass plate 29 and the frame 30, and the frame 30 and the diaphragm 33 are fixed, and the internal wafer W accommodation space is sealed in a vacuum. Thereafter, the inside of the chamber is opened to the atmosphere, and the wafer pack is taken out from the chamber and transferred to the exposure apparatus EX. Such a method can be performed regardless of whether the rigidity of the frame 30 is high or low.

  Next, when the wafer W exposed by the exposure apparatus EX is taken out from the wafer pack 28, in the state of FIG. 4D (however, it is not necessary to connect the vacuum pump 46 to the exhaust pipe 31). After opening the valve 31a to open the interior of the wafer pack 28 to the atmosphere, the frame 30 is raised as shown in FIG. Next, as shown in FIG. 4B, the wafer transfer arm 45 is lifted by sucking the back surface of the wafer W by the wafer transfer arm 45 in a state where the glass plate 29 is sucked and held on the support member 44 side. Thus, the exposed wafer W can be taken out. The taken out wafer W is transported to a coater / developer, for example, and development of the photoresist is performed.

3, the diaphragm 33 is fixed to the frame 30, and the glass plate 29 is detachable from the frame 30, but conversely, the glass plate 29 is fixed to the frame 30 and the diaphragm 33 is fixed. May be detachable from the frame 30.
Returning to FIG. 1, an XY coil carrier 40 is disposed below the wafer pack 28 in a rectangular flat plate shape and provided with various coils for driving. The XY coil carrier 40 is in a non-contact state by a gas bearing system, It is mounted on a flat wafer base 41 so as to be movable in the X direction, the Y direction, and the rotational direction around the Z axis. On the bottom surface side of the XY coil carrier 40, a drive coil for the first planar motor 64 that drives the XY coil carrier 40 in the X and Y directions with respect to the wafer base 41 and controls the rotation angle θZ is installed. On the upper surface side of the coil carrier 40, the wafer pack 28 (the magnetic plate 34 in FIG. 3) is driven in the X and Y directions with respect to the XY coil carrier 40, and the second planar motor 72 for controlling the rotation angle θZ is controlled. A drive coil is installed.

  Laser interferometers 42X and 42Y are arranged so as to face the reflecting surfaces (or movable mirrors) on the side surfaces of the wafer pack 28 (frame 30) in the + X direction and the + Y direction. The laser interferometers 42A and 42Y irradiate the corresponding reflecting surface with a laser beam (at least one of which is a multi-axis laser beam), for example, with reference to the projection optical system PL, at least the X direction and Y direction of the wafer pack 28 Is measured with a resolution of about 0.1 nm, the rotation angle θZ is measured, and the measured value is supplied to the stage control system 53 and the main control system 51. Furthermore, in this example, as will be described later, the relative position of the wafer pack 28 in the X and Y directions with respect to the XY coil carrier 40 is measured with a resolution of about 10 μm, and a linear encoder for measuring the rotation angle θZ, and the wafer A linear encoder for measuring the relative position of the XY coil carrier 40 with respect to the base 41 in the X direction and the Y direction with a resolution of about 10 μm and for measuring the rotation angle θZ is provided. The measurement values of these linear encoders are also supplied to the stage control system 53. The stage control system 53 receives the wafer pack 28 and the XY coil via the planar motors 64 and 72 based on the measurement values of the laser interferometers 42X and 42Y and their linear encoders and the control information from the main control system 51. The position and speed of the carrier 40 are controlled.

  Further, on the side surface in the + Y direction of the projection optical system PL, an off-axis imaging type alignment sensor ALG for detecting the position of the alignment mark (wafer mark) on the wafer W is arranged. An ALG detection signal is supplied to an alignment signal processing system 54. The alignment signal processing system 54 obtains the array information of all shot areas on the wafer W by the enhanced global alignment method (EGA method) based on the detection signal and supplies it to the main control system 51. In this case, the positional relationship (baseline amount, etc.) between the reference position of the image of the pattern of the reticle R in advance through the projection optical system PL (center of the image of the alignment marks 23A, 23B, etc.) and the detection position of the alignment sensor ALG. Is measured and stored. Therefore, as shown in FIG. 3, a reference mark FM1 and the like are formed in the vicinity of the wafer W on the bottom surface of the glass plate 29 of the wafer pack 28.

  Further, the exposure apparatus EX of this example supplies a liquid such as pure water to a local region (immersion region) between the optical member at the tip of the projection optical system PL and the glass plate 29 on the wafer W, A liquid immersion method is preferred in which the wafer W is exposed with the exposure light IL through the projection optical system PL, the liquid, and the glass plate 29. In this case, in order to suppress the spread of the liquid immersion region, it is preferable to apply a liquid repellent coating to the liquid on the upper surface of the glass plate 29. By adopting the immersion method in this way, the resolution and depth of focus of the projection optical system PL can be improved according to the liquid and the refractive index of the glass plate 29. Accordingly, the liquid is preferably a liquid that transmits the exposure light IL and has a refractive index as large as possible (for example, decalin). In order to perform exposure by the immersion method, for example, as disclosed in WO99 / 49504 or WO2005 / 122221, and as shown in FIG. What is necessary is just to provide the liquid supply apparatus 48 which supplies the liquid LQ via the piping 48a and a nozzle, and the liquid collection | recovery apparatus 49 which collect | recovers the liquid LQ of the liquid immersion area | region via a nozzle and the piping 49a.

  At the time of exposure using the exposure apparatus EX of FIG. 1, the wafer pack 28 containing the unexposed wafer W is placed on the XY coil carrier 40 by a wafer loader system (not shown), and then the alignment of the reticle R and the wafer W is performed. Is done. Thereafter, the illumination light 21 is irradiated from the illumination optical system 20 onto the illumination region 21R on the reticle R in a state where the wafer pack 28 is lifted and held in a non-contact manner via the electrostatic bearing member 37. Then, in a state where the pattern in the illumination area 21R is projected onto the projection area on one shot area on the wafer W via the projection optical system PL, the plane motors of the reticle stage RST and the XY coil carrier 40 are driven, The operation of synchronously moving the reticle R and the wafer W (wafer pack 28) in the Y direction and the irradiation of the exposure light IL are stopped, and the planar motor of the XY coil carrier 40 is driven to move the wafer W (wafer pack 28). The operation of stepping in the X direction and / or the Y direction is repeated. By repeating this operation, the pattern image of the reticle R is exposed to each shot area on the wafer W by the step-and-scan method. Thereafter, the wafer pack 28 containing the exposed wafer W is transferred to a coater / developer (not shown) by a wafer loader system (not shown).

Next, the configuration of the planar motors 64 and 72 for driving the XY coil carrier 40 and the wafer pack 28 of the exposure apparatus EX of FIG. 1 of this example, and the wafer pack 28 and the wafer base 41 and the XY coil carrier 40 are arranged. A configuration of a linear encoder for measuring a two-dimensional relative position will be described.
As shown in FIG. 2, the wafer base 41 of the exposure apparatus EX is installed on the floor FL, and a magnetic plate 62 on which a predetermined magnetization pattern is periodically formed is fixed on the upper surface of the wafer base 41. The upper surface of the magnetic plate 62 is finished with high flatness, and the XY coil carrier 40 is placed on the magnetic plate 62 in a non-contact state via a plurality of (for example, four corners) air guides 68 for blowing out gas. ing. An X-axis drive coil 63X and a Y-axis drive coil 63Y constituting the first planar motor 64 are fixed to the bottom surface of the XY coil carrier 40.

  FIG. 5A is a plan view showing the wafer base 41 of FIG. 1. In FIG. 5A, the surface of the magnetic plate 62 has a predetermined thickness and 45 ° to the X and Y axes. A magnetization pattern is formed by two-dimensionally arranging magnetization units MUA composed of four magnet portions MA1, MA2, MA3, MA4 that are radially magnetized so as to intersect each other in the X and Y directions with periods AX and AY, respectively. . In this way, by using the magnetic plate 62 having the magnetization pattern formed on the surface, when the XY coil carrier 40 indicated by the two-dot chain line on the surface is driven by the first planar motor 64, the position is closer to the center of gravity. XY coil carrier 40 can be driven more stably.

  Instead of using the magnetization unit MUA, as shown in FIG. 5 (B), the perpendicularly magnetized magnetization comprising the magnet parts MC1 and MC3 magnetized in the + Z direction and the magnet parts MC2 and MC4 magnetized in the −Z direction. It is preferable to use a magnetization pattern in which the units MUC are arranged at a predetermined pitch in a direction crossing the X axis and the Y axis at 45 °. The magnetic plate 62 may be configured as an assembly of a large number of individual permanent magnets having the magnet portions MA1 to MA4 as a unit. Similar to the magnetic plate 34 in the wafer pack 28, the magnetic plate 62 is a magnetic material having a very low linear expansion coefficient at room temperature where the exposure apparatus EX of this example is installed, preferably linear expansion such as a super invar magnet. It is formed from a magnetic material with a rate of approximately zero. As a result, when the XY coil carrier 40 is driven by the magnetic force with respect to the magnetic plate 62, the wafer base 41 is not distorted even if the temperature of the magnetic plate 62 rises to some extent, and the XY coil carrier 40. Can be driven with high accuracy.

  5A, on the bottom surface of the XY coil carrier 40, for example, three phases for driving the XY coil carrier 40 in the X direction (non-scanning direction) according to the period of the magnetization pattern of the magnetic plate 62. A plurality of sets of X-axis drive coils 63X and, for example, three-phase Y-axis drive coils 63Y for driving the XY coil carrier 40 in the Y direction (scanning direction SD) are provided. In this case, the X-axis linear motors 64X and Y-axis are respectively determined from the drive coils 63X and 63Y and the magnetization pattern of the magnetic plate 62 (more precisely, the magnetic field distribution changing with the periods AX and AY in the X and Y directions). The linear motor 64Y is configured, and the first planar motor 64 is configured by the biaxial linear motors 64X and 64Y (see FIG. 2). Under the control of the stage control system 53, the linear motors 64X and 64Y drive the XY coil carrier 40 with respect to the wafer base 41 in a non-contact state in the X direction and the Y direction, respectively. Further, as can be seen from FIG. 5A, since the linear motors 64X and 64Y each have a plurality of axes, the XY coil carrier can be obtained by driving one linear motor 64X (or 64Y) by different driving amounts on the two axes. It is also possible to control the rotation angle θZ of 40. Instead of using the planar motor 64, a driving mechanism in which two one-dimensional linear motors whose driving directions are orthogonal to each other may be used.

  The detector 67A includes a Hall element or the like that detects a magnetic field (a magnetic field that changes in the X and Y directions with a period AX and AY) on the bottom surface of the XY coil carrier 40 on the magnetic plate 62 on the wafer base 41. And 67B are fixed. The detectors 67A and 67B detect relative positions in the X direction and Y direction of the XY coil carrier 40 with respect to the wafer base 41 (magnetic plate 62) with a resolution of about 10 μm. The rotation angle θZ of the XY coil carrier 40 is also obtained from these detection results. The detection results of the detectors 67A and 67B are also used for phase switching (commutation) of the X-axis and Y-axis drive coils 63X and 63Y.

  Since the detectors 67A and 67B are an incremental method, the origin detection patterns 65A and 65B are embedded at predetermined intervals in the X direction at the end portion in the + Y direction of the magnetic plate 62 in order to set the origin. Yes. Correspondingly, the absolute positions of the patterns 65A and 65B in the X and Y directions are set at the end of the bottom surface of the XY coil carrier 40 in the + Y direction at the same interval in the X direction as the patterns 65A and 65B. The origin sensors 66A and 66B such as an optical type or a capacitance type are fixed for detection within a range narrower than the periods AX and AY of the magnetization patterns. In this example, as an example, when the origin sensors 66A and 66B simultaneously detect the positions of the patterns 65A and 65B in the X direction and the Y direction, the magnetic fields detected by the detectors 67A and 67B become a predetermined phase. The X axis and Y axis measurement values of the detectors 67A and 67B are reset. Thereafter, the position of the XY coil carrier 40 detected by the detectors 67A and 67B can be regarded as an absolute position based on the patterns 65A and 65B on the wafer base 41. As described above, the two-dimensional relative position of the XY coil carrier 40 with respect to the wafer base 41 is measured including the patterns 65A and 65B, the origin sensors 66A and 66B, the magnetization pattern of the magnetic plate 62, and the detectors 67A and 67B. For this purpose, a first linear encoder is configured. The measurement value of the first linear encoder is supplied to the stage control system 53.

  6A is a plan view showing the wafer pack 28, the XY coil carrier 40, and the wafer base 41 of FIG. 2. As shown in FIG. 6A, the top surface of the XY coil carrier 40 is shown. The wafer pack 28 is placed on the XY coil carrier 40 in the X direction (non-scanning direction) and the Y direction (scanning direction SD) according to the period of the magnetization pattern of the magnetic plate 34 in the wafer pack 28 in FIG. For example, a plurality of sets of three-phase X-axis drive coils 71X and Y-axis drive coils 71Y are installed. Also in this case, the drive coils 71X and 71Y and the magnetization pattern of the magnetic plate 34 in FIG. 3 constitute the X-axis linear motor 72X and the Y-axis linear motor 72Y, respectively, and the 2-axis linear motors 72X and 72Y A second planar motor 72 is configured (see FIG. 2). Under the control of the stage control system 53 in FIG. 2, the linear motors 72X and 72Y drive the wafer pack 28 in the non-contact state in the X and Y directions with respect to the XY coil carrier 40, respectively. At this time, the position of the wafer pack 28 in the Z direction and the inclination angles θX and θY are controlled in a non-contact state by electrostatic suction and gas blowing by the electrostatic bearing member 37 of FIG.

  As can be seen from FIG. 6A, the linear motors 72X and 72Y each have a plurality of axes. Therefore, by driving one of the linear motors 72X (or 72Y) by different driving amounts on the two axes, the wafer pack 28 is provided. It is also possible to control the rotation angle θZ. As the planar motors 64 and / or 72, for example, a planar motor disclosed in US Pat. No. 6,437,463 may be used. To the extent permitted by the laws of the designated or selected countries, the disclosure of the above-mentioned US Pat. No. 6,437,463 is incorporated into the text.

  As shown in FIG. 2, detectors 74 </ b> A and 74 </ b> B including Hall elements that detect the magnetic field of the magnetization pattern of the magnetic plate 34 in the wafer pack 28 are fixed on the upper surface of the XY coil carrier 40. The detectors 74A and 74B detect relative positions of the wafer pack 28 (magnetic plate 34) with respect to the XY coil carrier 40 in the X direction and Y direction with a resolution of about 10 μm. From these detection results, the rotation angle θZ of the wafer pack 28 with respect to the XY coil carrier 40 is also obtained. The detection results of the detectors 74A and 74B are also used for phase switching (commutation) of the drive coils 71X and 71Y.

  For the detectors 74A and 74B, an origin detection pattern 73B is fixed at the center of the bottom surface of the diaphragm 33 in order to set the origin. In the center of the upper surface of the XY coil carrier 40, an optical type for detecting the position of the pattern 73B in the X direction and the Y direction within a range narrower than the period BX, BY of the magnetization pattern of the magnetic plate 34 in FIG. An origin sensor 73A such as a capacitance type is fixed. Note that two sets of the origin sensor 73A and the pattern 73B are actually provided. As an example, when the magnetic field detected by the detectors 74A and 74B has a predetermined phase after the position of the pattern 73B is detected by the origin sensor 73A and the X-axis of the detectors 74A and 74B, Reset the Y axis measurement values. Thereafter, the position of the wafer pack 28 detected by the detectors 74A and 74B can be regarded as an absolute position based on the position where the pattern 73B is detected by the detector 74B. Thus, the second sensor for measuring the two-dimensional relative position of the wafer pack 28 with respect to the XY coil carrier 40 includes the origin sensor 73A, the pattern 73B, the magnetization pattern of the magnetic plate 34, and the detectors 74A and 74B. A linear encoder is configured. The measurement value of the second linear encoder is also supplied to the stage control system 53.

  However, in this example, the position of the wafer pack 28 in the X and Y directions and the rotation angle θZ are also measured by the laser interferometers 42X and 42Y in FIG. Therefore, by resetting or presetting the measurement values of the laser interferometers 42X and 42Y in a state where the wafer base 41 and the wafer pack 28 are in a predetermined positional relationship, the measurement values of the laser interferometers 42X and 42Y are thereafter obtained. By subtracting the measurement value (relative position of the XY coil carrier 40 with respect to the wafer base 41) of the first linear encoder including the detectors 67A and 67B of FIG. 5A from the (relative position of the wafer pack 28 with respect to the wafer base 41). The relative position of the wafer pack 28 with respect to the XY coil carrier 40 may be obtained. In this case, the origin sensor 73A and the pattern 74B on the upper surface side of the XY coil carrier 40 of FIG. 2 can be omitted.

  In the stage control system 53 of FIG. 1, the laser interferometers 42X and 42Y, the first linear encoder including the detectors 67A and 67B of FIG. 5A, and the second linear encoder including the detectors 74A and 74B of FIG. Based on the measured value and the control information from the main control system 51, the first planar motor 64 and the second planar motor 72 in FIG. 2 are driven. In this case, the positional relationship of the wafer pack 28 (wafer W) corresponding to the position of the reticle R in FIG. 1 is controlled based on the measured values of the laser interferometers 42X and 42Y, and the position of the XY coil carrier 40 is taken as an example. The wafer pack 28 is controlled so as to be positioned at the center of the XY coil carrier 40 as much as possible.

Next, an example of a method for driving the first planar motor 64 and the second planar motor 72 during scanning exposure and step movement will be described.
First, as shown in FIG. 6A, scanning is performed in which one shot area SA1 of the wafer W in the wafer pack 28 is moved in the + Y direction with respect to the projection area 21W of the projection optical system PL to expose the shot area SA1. At the time of exposure, the second planar motor 72 of FIG. 2 is driven to move the wafer pack 28 in the + Y direction indicated by the arrow A1 with respect to the XY coil carrier 40. In parallel with the operation, the stage control system 53 drives the first planar motor 64 of FIG. 2 to cancel the reaction force in the reverse direction against the XY coil carrier 40 due to the movement of the wafer pack 28 in the + Y direction. As described above, the XY coil carrier 40 is moved with respect to the wafer base 41 in the −Y direction indicated by the arrow A2. By this counter balance driving, the amount of vibration generated when scanning the wafer pack 28 can be made extremely small, and as a result, the overlay accuracy and the like can be improved.

When exposing a series of shot areas on the wafer W, the scanning direction of the wafer W is normally reversed alternately in the ± Y direction. For this reason, even if the counter balance driving is performed, the positional relationship between the wafer pack 28 and the XY coil carrier 40 does not gradually shift greatly.
Next, as shown in FIG. 6B, when the shot area SA2 on the wafer W is exposed to the shot area SA2 adjacent to the −X direction after the exposure, the irradiation of the exposure light IL is stopped and the wafer W is stopped. Must be stepped in the + X direction by the width of one shot area. For this purpose, the second planar motor 72 of FIG. 2 is driven to move the wafer pack 28 in the + X direction indicated by the arrow B1 with respect to the XY coil carrier 40. In the stage control system 53, slightly ahead of the operation, the first planar motor 64 of FIG. 2 is driven by the feed forward method, and the wafer pack 28 moves in the reverse direction with respect to the XY coil carrier 40 by moving in the + X direction. A driving force exceeding the reaction force is generated, and the XY coil carrier 40 is moved in the + X direction indicated by the arrow B2 with respect to the wafer base 41. At this time, the amount of movement of the wafer pack 28 in the + X direction relative to the projection optical system PL and the amount of movement of the XY coil carrier 40 in the + X direction relative to the projection optical system PL may be substantially the same.

  Similarly, when stepping the wafer W in the Y direction, when driving the wafer pack 28, the stage control system 53 may drive the XY coil carrier 40 in the same direction by a feed forward method. During step movement, even if some vibration is generated by driving the XY coil carrier 40, exposure accuracy is not affected. Further, when the wafer pack 28 starts to move, the wafer pack 28 and the XY coil carrier 40 are driven in the same direction as described above, thereby shortening the stroke of the coil carrier 40 that functions as a counter mass when the wafer pack 28 is driven. be able to. In other words, the XY coil carrier 40 that moves in the direction opposite to the driving direction of the wafer pack 28 by the reaction force when the wafer pack 28 is driven is driven in the same direction as the wafer pack 28 and then moved in the opposite direction. Therefore, the stroke of the coil carrier 40 necessary to cancel the reaction force is shortened. Further, since the relative position between the wafer pack 28 and the XY coil carrier 40 does not change before and after the step movement, it is possible to smoothly shift to the subsequent scanning exposure operation of the shot area SA2 of the wafer W, thereby increasing the exposure process throughput. be able to.

Next, a modification of this example will be described with reference to FIGS.
First, FIG. 7 shows a wafer driving mechanism when the exposure apparatus of FIG. 1 is of a double stage system. In FIG. 7, in which parts corresponding to those in FIGS. 2 and 6A are given the same or similar reference numerals, the magnetic unit MUA is placed on the magnetic plate on the wafer base 41A in the same manner as the wafer base 41 in FIG. 6A. Although the magnetization pattern periodically arranged in the Y direction is formed, the area of the wafer base 41A is larger than that of the wafer base 41. On the wafer base 41A, an XY coil carrier 40 having planar motors 64 and 72 (referred to as the first XY coil carrier 40 in the example of FIG. 7) is movably mounted via a gas bearing. A wafer pack 28 containing the wafer W is placed on the XY coil carrier 40 (referred to as the first wafer pack 28 in the example of FIG. 7). The surface of the wafer W is in close contact with the bottom surface of the glass plate 29.

  Further, a second XY coil carrier 40A having the same configuration as that of the first XY coil carrier 40 is also movably mounted on the wafer base 41A of FIG. 7, and the wafer W is also mounted on the second XY coil carrier 40A. The second wafer pack 28 </ b> A containing the wafer W <b> 1 having the same shape is placed, and the surface of the wafer W <b> 1 is in close contact with the bottom surface of the same glass plate 29 </ b> A as the glass plate 29. That is, on the bottom surface side of the second wafer pack 28A, a magnetic plate on which the same magnetization pattern as the magnetic plate 34 in FIG. 3 is formed is installed, and the second XY coil carrier 40A drives the X axis and the Y axis. A linear motor 72XA and 72YA including coils 71XA and 71YA are provided, and a second planar motor 72A for two-dimensionally driving the wafer pack 28A with respect to the XY coil carrier 40A is provided. Further, on the bottom surface of the second XY coil carrier 40A, as with the first planar motor 64 of the first XY coil carrier 40, a first plane that drives the XY coil carrier 40A two-dimensionally with respect to the wafer base 41A. A motor 64A is provided. Furthermore, the second XY coil carrier 40A also includes a first linear encoder that measures the relative position of the XY coil carrier 40A with respect to the wafer base 41A, and the wafer with respect to the XY coil carrier 40A, as with the first XY coil carrier 40. A second linear encoder for measuring the relative position of the pack 28A is also provided.

  Further, on the wafer base 41A of FIG. 7, a measurement stage 77 for measuring the imaging characteristics of the projection optical system PL, the exposure light irradiation energy, the baseline amount of the alignment sensor, and the like is also moved through the gas bearing. It is placed as possible. On the bottom surface of the measurement stage 77, a planar motor 64B similar to the first planar motor 64 for driving the measurement stage 77 two-dimensionally with respect to the wafer base 41A, and a relative position of the measurement stage 77 with respect to the wafer base 41A are shown. A linear encoder for measuring is provided.

  Other configurations are the same as those in the embodiment of FIG. 1, and the wafer pack 28 or 28A is also attached to the lower end of the projection optical system PL in FIG. 7 via the Z actuators 36A to 36C. An electrostatic bearing member 37 is provided to hold it so as to float in a non-contact state at a predetermined interval in the Z direction depending on the method. Further, the position of the wafer pack 28 (or 28A) below the projection optical system PL is measured by a laser interferometer (not shown in FIG. 7) corresponding to the laser interferometers 42X and 42Y of FIG. Further, the XY coil carriers 40 and 40A and the measurement stage 77 are connected to drive systems corresponding to the main control system 51 and the stage control system 53 of FIG. 1 via flexible signal cables 76A, 76B and 76C, respectively. The operation is centrally controlled by this drive system.

  In the example of FIG. 7, as shown in the drawing, the region where the first XY coil carrier 40 is located in the XY plane is the first region ST1, and the region where the second XY coil carrier 40A is located is the second region ST2. And In this case, exposure is performed in the first region ST1, measurement of the wafer W in the second region ST2, etc. (for example, measurement of a shift amount in the Z direction from the reference position of the focal position of the optical system) and wafer W (wafer pack). The loading / unloading of 28) may be performed. Further, the first region ST1 and the second region ST2 may partially overlap. For example, it is assumed that the wafer W1 in the second wafer pack 28A is already exposed on the second XY coil carrier 40A side located in the second region ST2. In this case, the first XY coil carrier 40 and the first wafer pack 28 are moved below the projection optical system PL in the first region ST1, and the interior of the wafer pack 28 with respect to the projection region 21W of the projection optical system PL is moved. In parallel with the operation of scanning the wafer W in the Y direction and exposing the wafer W, the second XY coil carrier 40A in the second region ST2 is loaded onto the wafer (wafer pack) loading position (wafer in FIG. 7). The second wafer pack 28A is exchanged with another wafer pack containing unexposed wafers by moving to the + X direction and −Y direction ends of the base 41A. As a result, immediately after the exposure of the wafer W in the first wafer pack 28 is completed, the second XY coil carrier 40A can be immediately moved below the projection optical system PL to start exposure of the unexposed wafer. Throughput of the exposure process can be improved.

When the alignment sensor is disposed near the loading position of the wafer or wafer pack and the wafer is exposed on one XY coil carrier 40 (or 40A) side, the other XY coil carrier 40A (or 40) is used. The alignment of the unexposed wafer may be performed on the () side.
Further, instead of replacing the wafer pack 28 (28A) with a wafer pack containing another unexposed wafer, the wafer pack shown in FIG. 4 near the XY coil carrier 40 (or 40A) at the loading position. The wafer from 28 may be taken out and stored. In this way, after the exposed wafer in the wafer pack 28 (28A) is replaced with another unexposed wafer, the wafer pack 28 (28A) is returned to the XY coil carrier 40 (or 40A) again, whereby the wafer is obtained. The pack 28 (28A) can be used repeatedly.

  Next, FIG. 8A shows the main part of the exposure apparatus in which the glass plate 29 to which the wafer W is in close contact is directly fixed to the stage. In FIG. 8A, the flat plate-like shape below the projection optical system PL is shown. An XY stage 79 is mounted on a surface plate 78 so as to be movable in the X and Y directions via a gas bearing. On the XY stage 79, for example, three Zs driven in the Z direction by a voice coil motor system or the like are mounted. The Z stage 80 is supported via the drive units 81A, 81B, 81C. The XY stage 79 is driven in the X and Y directions orthogonal to each other by two sets of linear motors, for example, along a guide mechanism (not shown). A laser beam is irradiated from a laser interferometer (not shown) to the reflecting surface (or moving mirror) on the side surface in the X direction and Y direction of the Z stage 80, and at least the position of the Z stage 80 in the X direction and Y direction is irradiated by the laser interferometer. , Rotation angle θZ, and the like are measured.

  Then, the glass plate 29 is detachably held on the upper surface of the Z stage 80 via two supporting members 82A and 82B separated in the Y direction, and the surface of the wafer W (photoresist is coated on the bottom surface 29a of the glass plate 29). The entire exposed surface) is in close contact. In this case, suction holes 82Aa and 82Ba connected to a vacuum pump (not shown) are formed in the support members 82A and 82B, and the glass plate 29 is vacuum-sucked on the support members 82A and 82B by the suction holes 82Aa and 82Ba. Is held in a manner.

  Further, a flat plate-like shape having a height that is substantially in contact with the upper surface of the glass plate 29 via the connecting members 83A and 83B and is at least above the end of the wafer W is provided above the support members 82A and 82B. The electrode plates 84A and 84B are arranged, and a predetermined charge (or potential) is applied to the electrode plates 84A and 84B from a control device (not shown) so that the wafer W can be held on the bottom surface of the glass plate 29 by electrostatic adsorption. It is configured. Further, by controlling the focus position and the like of the Z stage 80 via the Z drive portions 81A, 81B and 81C based on the focus position and the like of the surface of the wafer W measured via an AF sensor (not shown), the wafer The surface of W can be focused on the image plane of the projection optical system PL.

  In this example, the unexposed wafer W is transferred between the support members 82A and 82B while being placed on the wafer transfer arm 85 as an example. Next, the wafer transfer arm 85 is raised, the surface of the wafer W is brought into contact with the bottom surface 29a of the glass plate 29, and the electrode plates 84A and 84B are charged with positive or negative charges. 29 is adsorbed and held. Thereafter, the position of the Z stage 80 (wafer W) is measured by a laser interferometer (not shown), and the XY stage 79 is driven based on the measured value, whereby the glass plate 29 is exposed with the exposure light IL from the projection optical system PL. The wafer W is exposed via Thereafter, the wafer transfer arm 85 is disposed on the back surface of the wafer W, and the electrode W is transferred to the wafer arm 85 by releasing the charging of the electrode plates 84A and 84B or charging the opposite charge only for a short time. .

  In the exposure apparatus of FIG. 8A as well, since the wafer W is held so that the surface of the wafer W is in close contact with the bottom surface of the glass plate 29, the structure of the Z stage 80 can be simplified and the back surface of the wafer W can be simplified. The wafer W can be exposed in a state where the surface of the wafer W is maintained at a high flatness without being affected by the flatness. Accordingly, a reticle pattern (not shown) is exposed to each shot area of the wafer W with high accuracy via the projection optical system PL. Further, if a foreign substance adheres to the glass plate 29, the glass plate 29 can be quickly replaced with another glass plate by releasing the vacuum suction via the support members 82A and 82B.

FIG. 8B shows a main part of the exposure apparatus that holds the wafer W by bringing a part of the surface of the wafer W into close contact with one surface of the member arranged to face the wafer W. FIG. In B), members corresponding to those in FIG. 8A are given the same reference numerals, and detailed descriptions thereof are omitted.
In FIG. 8 (B), a metal holding having an annular bottom surface 86a finished with high flatness by polishing on two supporting members 82A and 82B fixed apart on the Z stage 80 in the Y direction. The member 86 is fixed. An annular groove 86c for suction is formed in a region in contact with the surface of the wafer W near the inner edge of the bottom surface 86c of the holding member 86, and the groove 86c passes through an exhaust hole 86b formed inside the holding member 86. The pipe 87 is connected to a vacuum pump (not shown).

  In the example of FIG. 8B as well, the unexposed wafer W is transferred between the support members 82A and 82B while being placed on the wafer transfer arm 85 as an example. Next, the wafer transfer arm 85 is raised, the ± Y direction end of the surface of the wafer W is brought into contact with the bottom surface 86a of the holding member 86, and the groove 86c of the holding member 86 is set to a negative pressure via the pipe 87. As a result, the wafer W is sucked and held on the bottom surface 86 a of the holding member 86. Thereafter, after the wafer W is exposed with the exposure light IL from the projection optical system PL, the wafer transfer arm 85 is disposed on the back surface of the wafer W, and the vacuum suction is released, whereby the wafer W is delivered to the wafer arm 85. .

  In the exposure apparatus of FIG. 8B as well, the structure of the Z stage 80 is simplified because the wafer W is held such that a part of the surface of the wafer W is in close contact with the bottom surface of the holding member 86 with high flatness. In addition, the wafer W can be exposed without being affected by the flatness of the back surface of the wafer W while maintaining the surface of the wafer W at a high flatness. Accordingly, a reticle pattern (not shown) is exposed to each shot area of the wafer W with high accuracy via the projection optical system PL.

Next, functions and effects of the first embodiment of the present invention and the modifications thereof will be described.
(A1) According to the exposure apparatus EX shown in FIG. 1, FIG. 8 (A), or FIG. 8 (B), the process of transporting the wafer W to the exposure position below the projection optical system PL and the wafer W as exposure light. In at least a part of the time of exposure with IL, a high flatness surface (a flat surface or a surface disposed facing the substrate, which is the bottom surface of the glass plate 29 or the bottom surface of the holding member 86; It is also referred to as a contact surface.) At least a part of the surface of the wafer W is brought into close contact with the surface to hold the wafer W. Therefore, since it is not necessary to provide a wafer suction mechanism on the back side of the wafer W, the movable part of the stage system on the back side of the wafer W can be simplified or downsized. Further, even when the flatness of the back surface side of the wafer W is inferior to that of the front surface side, exposure or conveyance can be performed in a state where the flatness of the surface of the wafer W is kept high.

(A2) Further, since the surface of the wafer W is held in close contact with the contact surface of the glass plate 29 or the holding member 86 by electrostatic adsorption or vacuum adsorption, the surface of the wafer W is used as the contact surface. Good adhesion can be achieved.
(A3) Further, in the configuration of FIG. 2, since the surface of the wafer W is urged against the bottom surface 29a of the glass plate 29 by the buffer member 35 in the wafer pack 28, the surface of the wafer W is in good contact with the bottom surface. Can be made. For example, in the exposure apparatus of FIG. 8A, even if the surface of the wafer W is biased toward the bottom surface 29a side (+ Z direction) of the glass plate 29 by a buffer member (not shown) on the back surface side of the wafer W. Good. In this case, the surface of the wafer W can be brought into close contact with the bottom surface 29a of the glass plate 29 only by energizing the wafer W without using electrostatic adsorption or vacuum adsorption.

  (A4) Further, as shown in FIGS. 2, 8A, and 8B, at least a part of the surface of the wafer W is brought into close contact with the contact surface of the glass plate 29 or the holding member 86, When the shot region on the surface of the wafer W is exposed with the exposure light IL while the wafer W is held, the exposure can be performed with the flatness of the surface of the wafer W being increased. It is possible to improve line width accuracy, overlay accuracy, and the like when the pattern is transferred to the shot area of the wafer W via the projection optical system PL. Therefore, a device having a fine pattern can be manufactured with high accuracy.

  (A5) Further, as shown in FIG. 2, the exposure light is held in a state where the region including the shot region on the surface of the wafer W is brought into close contact with the bottom surface 29a of the glass plate 29 that transmits the exposure light IL and the wafer W is held. When the shot region of the wafer W is exposed through the glass plate 29 with IL, the refractive index of the glass plate 29 is higher than that of a normal gas, so that the resolution of the projection optical system PL depends on the refractive index of the glass plate 29. And the depth of focus can be improved.

  (A6) Further, with the exposure light IL, the liquid LQ supplied to the projection optical system PL, a space (immersion space) including the optical path of the exposure light IL between the tip of the projection optical system PL and the glass plate 29, When the shot region of the wafer W is exposed through the glass plate 29, the refractive index of the entire optical path from the projection optical system PL to the wafer W can be increased, so that the resolution and depth of focus of the projection optical system PL are further improved. it can.

  (A7) Further, in the case of performing exposure by the liquid immersion method as described above, when a liquid-repellent coating is applied to the liquid LQ on the surface of the glass plate 29 that is in contact with the liquid LQ, the liquid LQ is supplied onto the glass plate 29. The liquid LQ can be easily confined in a narrow liquid immersion area. In addition, the coating that can be formed on the photoresist of the wafer W is limited, but the coating that can be formed on the glass plate 29 is not limited, so that the liquid LQ can be formed on the photoresist with a high refractive index. Even when there is no ionic coating, an effective liquid-repellent coating may be formed on the glass plate 29 in some cases.

  (A8) In addition, the example of FIG. 2 includes an electrostatic bearing member 37 having an electrode member 75 and a plurality of blowing holes 37a to which compressed gas from the compressor 38 is supplied. When the wafer W is exposed, the wafer pack 28 that integrally holds the glass plate 29 and the wafer W in a state where the surface of the wafer W is in close contact with the bottom surface 29a of the glass plate 29 is attached to the projection optical system PL. In order to hold the wafer W in such a positional relationship that the surface of the wafer W coincides with the image plane of the projection optical system PL within a predetermined allowable range in the direction of the optical axis AX (direction in which the exposure light IL is irradiated). The glass plate 29 is electrostatically attracted by the electrode member 75 of the bearing member 37, and a gas whose flow rate is controlled is blown from the blowing holes 37 a of the electrostatic bearing member 37 to the glass plate 29. Therefore, the wafer pack 28 can be held stably in a non-contact state with respect to the projection optical system PL and with high focusing accuracy between the surface of the wafer W and the image plane of the projection optical system PL.

  (A9) Further, in the example of FIG. 2, Z actuators 36A to 36C that drive the electrostatic bearing member 37 in the optical axis AX direction at three locations are provided, and the position of the wafer W and the projection optical system PL in the optical axis AX direction. In order to control the relationship (focus position, tilt angles θX, θY), the electrostatic bearing member 37 can be driven in the Z direction. Therefore, for example, by correcting the offset between the surface of the wafer W and the image plane of the projection optical system PL with the Z actuators 36A to 36C, the focusing accuracy can be improved. The Z actuators 36A to 36C can be omitted.

  (A10) Further, in the example of FIG. 2, in the wafer pack 28, the wafer W is formed by alternately arranging the glass plates 29 and the magnetic generators having different polarities (magnet units MB1 to MB4 of the magnetization unit MUB of FIG. 3). Drive coils 71X and 71Y fixed on an XY coil carrier 40 that is held integrally with the magnetic plate 34 and disposed on the opposite side of the wafer W from the magnetic plate 34. The 2nd plane motor 72 containing these is provided. Then, in order to move the wafer pack 28 in the X direction and the Y direction (direction intersecting with the direction in which the exposure light IL is irradiated) with respect to the projection optical system PL, the drive coils 71X and 71Y of the second planar motor 72 are used. Since the magnetic plate 34 is magnetically driven, the wafer pack 28 (wafer W) can be moved at high speed in a non-contact state.

(A11) Further, when the magnetic plate 34 is formed of a material having a linear expansion coefficient of approximately zero at room temperature where the exposure apparatus is installed, the temperature of the magnetic plate 34 increases due to the driving of the second planar motor 72. However, the wafer W is not deformed.
(A12) In the example of FIG. 2, a first planar motor 64 for driving the XY coil carrier 40 to which the drive coils 71X and 71Y are fixed in the X and Y directions with respect to the wafer base 41 is provided. . Then, in order to drive the wafer pack 28 (wafer W) in the X and Y directions with respect to the projection optical system PL, the XY coil carrier 40 (driving coils 71X and 71Y) is moved in the X and Y directions by the first planar motor 64. In the case of driving in the direction, the XY coil carrier 40 having a complicated configuration including a drive coil and the like can be reduced in size, and the moving stroke of the wafer pack 28 (wafer W) can be increased.

  In FIG. 2, the XY coil carrier 40 is regarded as a wafer base (surface plate) by enlarging the upper part of the XY coil carrier 40 where the drive coils 71X and 71Y are arranged in the X direction and the Y direction. The wafer pack 28 may be driven in the X direction and the Y direction on the base. In this configuration, the usage amount of the drive coils 71X and 71Y increases, but it is not necessary to provide the first planar motor 64 and the wafer base 41 on the bottom surface of the XY coil carrier 40.

  (A13) As shown in FIG. 6, when moving the wafer W (wafer pack 28) in the Y direction (predetermined movement direction) with respect to the projection optical system PL in order to expose the wafer W, an XY coil carrier is used. When the wafer pack 28 (magnetic plate 34) is driven in the Y direction with respect to 40 (drive coils 71X and 71Y) and the XY coil carrier 40 is moved in the opposite direction so as to cancel the reaction force, Generation of vibration can be suppressed.

  (A14) Further, as shown in FIG. 7, the wafer packs 28 and 28A in which the glass plates 29 and 29A, the wafers W and W1, the magnetic plate 34, etc. are integrated, and the drive coils 71X and 71Y and 71XA and 71YA are fixed. When the first and second stage mechanisms including the XY coil carriers 40 and 40A, respectively, are driven in parallel on the common wafer base 41A, the throughput of the wafer exposure process can be improved.

(A15) Next, the wafer pack 28 storing (holding) the wafer W shown in FIGS. 2 and 3 is formed with a flat surface or a bottom surface 29a which is a surface disposed opposite to the substrate (wafer W). The glass plate 29 is provided with a buffer member 35 for holding the wafer W by bringing the entire surface of the wafer W into close contact with the bottom surface 29a and a vacuum suction mechanism.
The wafer holding apparatus having the glass plate 29, the supporting members 82A and 82B, and the Z stage 80 shown in FIG. 8A holds the wafer W by bringing the entire surface of the wafer W into close contact with the bottom surface 29a of the glass plate 29. In order to do this, an electrostatic chucking mechanism is provided for charging the electrode plates 84A and 84B arranged on the glass plate 29. On the other hand, the wafer holding apparatus having the annular holding member 86, the supporting members 82A and 82B, and the Z stage 80 shown in FIG. 8B has a part of the surface of the wafer W in close contact with the bottom surface 29a of the glass plate 29. In order to hold W, a vacuum suction mechanism that makes the groove 86c of the holding member 86 a negative pressure is provided.

The wafer pack 28 or the wafer holding mechanism can be used as a mechanism for holding the wafer in the exposure apparatus EX of FIG. 1 or the exposure apparatus of FIGS. 8A and 8B, and the surface flatness of the wafer W can be increased. The wafer W can be held in the maintained state.
(A16) Since the wafer pack 28 in FIG. 2 has the buffer member 35 that biases the surface of the wafer W on the bottom surface 29a of the glass plate 29, the degree of adhesion of the surface of the wafer W to the bottom surface 29a with a simple mechanism. Can be enhanced. A small compression coil spring or the like can be used as the buffer member 35.

  (A17) In the space surrounded by the glass plate 29, the frame 30, and the diaphragm 33 of the wafer pack 28, the atmosphere around the area where the surface of the wafer W is in contact with the bottom surface 29a of the glass plate 29 is maintained at a negative pressure. Therefore, the degree of adhesion of the surface of the wafer W to the bottom surface 29a can be increased. For example, when adopting a configuration in which the glass plate 29 is fixed to the frame 30 with a spring mechanism or the like and the wafer W is urged toward the glass plate 29 by the buffer member 35 or the like, the inside of the wafer pack 28 is negative. The mechanism for pressure can be omitted.

  (A18) Further, the wafer pack 28 includes an urging mechanism including a flat diaphragm 33 constituting a part of the hermetic chamber, and a buffer member 35 interposed between the diaphragm 33 and the wafer W. Therefore, the degree of adhesion of the surface of the wafer W to the bottom surface 29a can be increased with a simple mechanism. The diaphragm 33 can be omitted when the thickness of the buffer member 35 is large. Conversely, the buffer member 35 can be omitted when the flexibility of the diaphragm 33 is large.

(A19) Further, in the wafer pack 28 of FIG. 2 and the wafer holding apparatus of FIG. 8A, the glass plate 29 transmits the exposure light IL, so that the exposure light IL exposes the wafer W through the glass plate 29. This can improve the resolution and depth of focus of the projection optical system PL.
(A20) Further, in the exposure apparatus of FIGS. 2 and 8A, when exposure is performed by the liquid immersion method, the surface (upper surface) of the glass plate 29 that comes into contact with the liquid is liquid-repellent with respect to the liquid. In this case, the liquid can be easily confined in a local liquid immersion area including the projection area 21W of the projection optical system PL.

(A21) Further, since the wafer pack 28 of FIG. 2 includes the magnetic plate 34 which is disposed so as to sandwich the wafer W together with the glass plate 29 and includes the region in which the magnetization units MUB are periodically arranged, for example, a linear motor system. Thus, the wafer pack 28 can be easily driven in a non-contact manner.
[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. The configuration of the exposure apparatus of this example is almost the same as that of the exposure apparatus EX of the first embodiment (FIG. 1). However, in the exposure apparatus EX of FIG. In this example, the wafer W is held in a non-contact state and is driven in the XY plane. In the following, in FIGS. 9 to 11, parts corresponding to those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 9 is a partially cutaway view showing the wafer drive mechanism of the exposure apparatus of this example. In FIG. 9, the Z direction is provided below the projection optical system PL via three Z actuators 36A to 36C. The ring-shaped electrostatic bearing member 37 is attached so that the position and the inclination angles θX and θY can be finely adjusted. The wafer W is arranged to float on the bottom surface side of the electrostatic bearing member 37. In FIGS. 9 and 11, the wafer W is expressed thicker than it actually is for the sake of clarity.

  In addition, the electrode member 75 in the electrostatic bearing member 37 in FIG. 2 is divided into three in the circumferential direction, whereas the bottom surface (wafer W) of the electrostatic bearing member 37 in this example (FIG. 9). The electrode member 88 capable of applying a large number of small individual charges (or relative potentials) in a predetermined cycle in the X direction and the Y direction sandwiches an insulating material such as a synthetic resin, for example. Is arranged in. The stage control system 53A individually controls the attractive force of the multiple electrode members 88 to the wafer W due to static electricity to thereby position the wafer W in the Z direction (focus position) with respect to the projection optical system PL and the tilt angle θX. , ΘY (leveling) is adjusted.

  In addition, a large number of blowing holes 37a on the bottom surface of the electrostatic bearing member 37 are connected to the compressor 38 through the air holes 37b and the piping 39 inside the electrostatic bearing member 37, and are controlled by the stage control system 53A. The gas is blown out to the wafer W so that the wafer W does not come into contact with the electrostatic bearing member 37. Therefore, the electrostatic bearing member 37 provided with the electrode member 88 of this example also holds the wafer W so as to float in a non-contact state at a predetermined interval in the Z direction by an air preload type electrostatic bearing system.

  Also in this case, an AF sensor 61 for measuring the position in the Z direction (focus position) and the tilt angles θX and θY of the projection area 21W irradiated with the exposure light IL via the projection optical system PL is arranged. . During exposure of the wafer W, the stage control system 53A is based on the measurement value of the AF sensor 61 so that the projection area 21W of the wafer W is focused on the image plane of the projection optical system PL. The suction force with respect to the wafer W by the multiple electrode members 88 is controlled. However, in this example, since the wafer W is driven in the X direction and the Y direction by an electrostatic field from the back side of the wafer W, the electrostatic field on the front side of the wafer W and the electrostatic field on the back side are cooperated. Need to be controlled (details will be described later).

  Next, an XY coil carrier 40C and a wafer base 41 are sequentially arranged below the projection optical system PL and on the back side of the wafer W during exposure of the wafer W, and the wafer base 41 is fixed on the floor FL. Further, a magnetic plate 62 having a magnetization pattern in which the magnetization units MUA shown in FIG. 5A are periodically arranged is fixed on the upper surface of the wafer base 41, and a plurality of air guides 68 are provided on the magnetic plate 62. The XY coil carrier 40C is mounted so as to be movable in the X direction and the Y direction in a non-contact state via the. The XY coil carrier 40C is moved from the linear motors 64X and 64Y to the wafer base 41 in the X direction and the Y direction from the linear motors 64X and 64Y composed of the drive coils 63X and 63Y fixed to the bottom surface of the XY coil carrier 40C. The first planar motor 64 is configured to drive and control the rotation angle θZ.

  In addition, an electrode member 87 capable of applying a large number of small individual charges (or relative potentials) in a predetermined cycle in the X direction and the Y direction sandwiches an insulating material such as a synthetic resin on the top of the XY coil carrier 40C. Is arranged in. The period of the arrangement of the electrode members 87 in the X direction and the Y direction is, for example, the same as the period of the arrangement of the electrode members 88 in the electrostatic bearing member 37 in the X direction and the Y direction. The stage control system 53A individually controls the suction force in the X direction and the Y direction with respect to the wafer W due to static electricity of the large number of electrode members 87, whereby the position of the wafer W in the X direction and the Y direction with respect to the XY coil carrier 40C and The rotation angle θZ (relative positional relationship) is controlled.

Thus, when driving the wafer W in the X direction and the Y direction, it is necessary to detect the position information of the wafer W. Therefore, as an example, in each shot area of the wafer W of this example, a scale pattern for monitoring the positions in the X direction and Y direction of each shot area is formed in the pattern forming process so far.
FIG. 10 shows the tip of the projection optical system PL of FIG. 9 and the shot area SA being exposed on the wafer W. In FIG. 10, the scribe line area having a width of about 50 μm at the center of the shot area SA A scale pattern 95 is formed which is a concave and convex pattern having a predetermined period (for example, about 0.1 to 1 μm) in the Y direction (scanning direction) and a predetermined period (for example, about 0.1 to 2 μm) in the X direction. Photoresist is applied. Similarly, the same pattern as the scale pattern 95 is formed in all other shot regions on the wafer W. If there is no scribe line area in the center of the shot area SA due to the arrangement of circuit patterns in the shot area, the scale pattern 95 may be formed in the scribe line area between adjacent shot areas. Good. In this case, in order to measure the rotation angle θZ of the wafer W (shot area SA), scale patterns formed in both scribe line areas sandwiching the shot area SA in the X direction may be measured.

  Further, in practice, in order to detect the absolute position of the scale pattern 95 in the shot area SA (for example, the distance from the reference position in the shot area SA), the scale pattern 95 is combined with the scale pattern 95 in or near the shot area SA. A pattern (which may also be used as a normal wafer mark) indicating the origin position in the X and Y directions is also formed. By detecting a pattern indicating the origin position by a sensor (not shown), an offset (initial value) of the movement amount of the wafer W detected from the scale pattern 95 is set.

As shown in FIG. 9, the exposure apparatus of this example includes a light transmission system 89A and a light reception system 89B inside the electrostatic bearing member 37, and detects information on the position or movement amount of the scale pattern 95 in FIG. A detector 89 is provided.
10 is emitted from a laser light source 91 such as a He-Ne laser (wavelength 633 nm) or a semiconductor laser emitting light in the visible to near-infrared range (a collimator lens is installed at the emission end). The laser beam in a wavelength region that is non-photosensitive to the photoresist on the wafer W is divided into a laser beam LB1 and a second laser beam by the beam splitter 92A, and the second laser beam is laser-induced by the beam splitter 92C. The beam is divided into a beam LB2 and a fourth laser beam. Then, after the fourth laser beam is reflected by the mirror 93A, it is divided into two laser beams LB3 and LB4 by the beam splitter 92D, and the laser beam LB4 is reflected by the mirror 93B. Then, the two laser beams LB1 and LB2 are incident on the scale pattern 95 on the wafer W while being largely inclined around an axis parallel to the Y axis and inclined substantially symmetrically in the Y direction. The interference light LBY of the + 1st order diffracted light of the laser beam LB1 and the -1st order diffracted light of the laser beam LB2 enters the photoelectric detector 94Y. By inputting a detection signal of the photoelectric detector 94Y and a detection signal output from a photoelectric detector (not shown) having a phase difference of 90 ° to a counter circuit (not shown), the position of the scale pattern 95 in the Y direction is determined. It can be measured.

  The two laser beams LB3 and LB4 are incident on the scale pattern 95 in a state of being largely inclined clockwise around an axis parallel to the X axis and inclined substantially symmetrically in the X direction. Interference light LBX between the + 1st order diffracted light of the beam LB3 and the −1st order diffracted light of the laser beam LB4 enters the photoelectric detector 94X. By inputting a detection signal of this photoelectric detector 94X and a detection signal output from a photoelectric detector (not shown) having a phase difference of 90 ° to a counter circuit (not shown), the position of the scale pattern 95 in the X direction is determined. It can be measured. Further, in order to measure the rotation angle θZ of the shot area SA, a scale pattern (not shown) for the shot area SA different from the scale pattern 95 (for example, a scribe line between shot areas adjacent in the + X direction). It is also preferable to measure the position in the Y direction of the scale pattern formed in the region. Position information obtained by presetting the value measured by the counter circuit at the origin position is supplied to the stage control system 53A in FIG.

  Position information of reticle R (reticle stage RST) measured by laser interferometers 25X and 25Y in FIG. 1 is also supplied to stage control system 53A, and stage control system 53A determines reticle R from the two position information. And the relative positional relationship between the wafer W and the wafer W can be obtained. The stage control system 53A drives the reticle stage RST of FIG. 1 so that the relative positional relationship thereof becomes an image formation relationship via the projection optical system PL, and also a number of XY coil carriers 40C of FIG. The wafer W is driven in the X and Y directions by controlling the charge distribution of the electrode members 87 and the many electrode members 88 in the electrostatic bearing member 37.

  Specifically, when the wafer W is driven in the −Y direction in a non-contact state below the projection optical system PL, first, as a preparation process, as shown in FIG. 9, parallel to the Y axis on the XY coil carrier 40C side. In the electrode members 87 arranged in a row, the charges (or relative potentials, and so on) of every other position B and D (or positions G and I) are alternately inverted. Similarly, every other electrode member 87 arranged in parallel with the X-axis inverts the charge alternately. In this case, polarization charges having the same polarity as the electrode member 87 in the −Z direction are generated on the surface of the wafer W, respectively. Therefore, in the electrode member 88 on the electrostatic bearing member 37 side, in order to attract the wafer W in the + Z direction by the electrostatic field, a polarization charge distribution on the surface of the wafer W and a charge distribution with the polarity reversed are set. As a result, in the row of electrode members 88 arranged in parallel to the Y axis on the electrostatic bearing member 37 side, the positions b and D in the + Z direction of the positions B and D (or positions G and I) on the XY coil carrier 40C side The charge at d (or positions g and i) is opposite in polarity to the charge of the electrode member 87 at positions B and D (or positions G and I).

  In the case of FIG. 9, the force for moving the wafer W in the X and Y directions may be considerably smaller than the force for attracting and holding the wafer W in the + Z direction. Therefore, the suction force in the −Z direction that acts on the wafer W by the electrode member 87 on the XY coil carrier 40C side is the suction force in the + Z direction that acts on the wafer W by the electrode member 88 on the electrostatic bearing member 37 side. Therefore, the wafer W can be stably held in a non-contact state between the electrostatic bearing member 37 and the XY coil carrier 40C.

  Next, as shown in FIG. 11A, in the row of electrode members 87 arranged in parallel to the Y axis on the XY coil carrier 40C side, positions B and D (or positions G and In I), the charge is set to 0, and the charge is alternately inverted at every other position A, C, E (or position F, H, J) between them. At this time, the charge distribution of the electrode member 88 on the electrostatic bearing member 37 side is not changed. As a result, due to the repulsive force and the attractive force between the polarization charge distribution on the back surface of the wafer W and the charge distribution of the electrode member 87 of the XY coil carrier 40C below the wafer W, the wafer W has an electrode as shown in FIG. The member 87 moves in the −Y direction for one period and stops. If the charges at positions A, C, and E (or positions F, H, and J) of the electrode member 87 on the XY coil carrier 40C side are reversed, the wafer W can be moved in the + Y direction.

  In the state of FIG. 11B, the polarization charge distribution of the wafer W is also moved in the −Y direction by one cycle of the electrode member 88 with respect to the electrostatic bearing member 37 as compared with the state of FIG. Therefore, in the row of electrode members 88 arranged in the Y direction on the electrostatic bearing member 37 side, positions c and e (or in the + Z direction of the positions C and E (or positions H and J) on the XY coil carrier 40C side. The charge at the position h, j) is set to the opposite polarity to the charge of the electrode member 87 at the position C, E (or position H, J). Thereby, even after the wafer W moves in the Y direction, the wafer W can be attracted to the electrostatic bearing member 37 side by an electrostatic field. By repeatedly executing this operation, the wafer W can be driven in the Y direction while the wafer W is attracted to the electrostatic bearing member 37 by static electricity in a non-contact manner. Similarly, by controlling the charge distribution in the X direction of the electrode member 88 on the electrostatic bearing member 37 side in accordance with the charge distribution in the X direction of the electrode member 87 on the XY coil carrier 40C side, the electrostatic bearing member 37 side is controlled. The wafer W can be driven in the X direction in a state where the wafer W is attracted in a non-contact manner by static electricity.

  The other configuration is the same as that of the exposure apparatus of the first embodiment (FIG. 1), and the electrode member 87 on the XY coil carrier 40C side in FIG. 9 is driven to move the wafer W in the Y direction. By doing so, the pattern of the reticle R in FIG. 1 can be transferred to each shot area on the wafer W via the projection optical system PL by a scanning exposure method. At this time, according to this example, since the mechanism for controlling the focus position and the tilt angle of the wafer W is disposed above the wafer W, the configuration of the wafer drive mechanism on the back side of the wafer W can be simplified. Can do.

Next, the effect of the second embodiment of the present invention will be described.
(B1) According to the exposure apparatus of FIG. 9 described above, the electrostatic bearing member 37 in which the electrode member 88 for generating the first electrostatic field is disposed on the front surface side of the wafer W, and the second static on the back surface side of the wafer W. An electrode member 87 for generating an electric field is disposed, and an XY coil carrier 40C is disposed on the back side of the wafer W. When the wafer W is exposed, the second electrostatic field drives the wafer W in the X direction and the Y direction (direction intersecting the direction irradiated with the exposure light IL), and the wafer W is driven by the first electrostatic field. It is driven in the Z direction (direction in which the exposure light IL is irradiated). Therefore, the wafer W is driven in the direction along the surface by the second electrostatic field, and the position (height) in the Z direction of the wafer W is controlled by the first electrostatic field. Since the wafer W can be driven almost three-dimensionally with high accuracy in a non-contact state while simplifying or downsizing the movable portion (XY coil carrier 40C) disposed in the substrate, the throughput of the exposure process can be improved.

  In this case, since the wafer W is thin, the flatness of the projection region 21W on the surface of the wafer W is increased by individually controlling the suction force to the wafer W by the large number of electrode members 88 on the electrostatic bearing member 37 side. Is also possible. That is, since the wafer W is not held following the back surface of the wafer W, even when the flatness of the back surface is inferior, the flatness of the surface of the wafer W is increased during exposure by controlling the first electrostatic field. Can be maintained. Therefore, since overlay accuracy and the like are improved, a device having a fine pattern can be manufactured with high accuracy.

  (B2) Further, the stage control system 53A changes the polarity distribution in the X direction and Y direction of the second electrostatic field by the electrode member 87 in the XY coil carrier 40C with time, and in the electrostatic bearing member 37. The polarity distribution of the first electrostatic field by the electrode member 88 in the X direction and the Y direction is a polarity distribution corresponding to the polarization charge distribution generated on the surface side of the wafer W by the second electrostatic field (for example, the first static field). When the polarity distribution of the electric field is changed with time (reverse to the polarization charge distribution), the first electrostatic field and the second electrostatic field cooperate to float the wafer W in the Z direction. In this state, the wafer W can be efficiently driven in the X direction and the Y direction.

  (B3) In addition, since the compressor 38 that blows out the compressed gas from the blow-out hole 37a of the electrostatic bearing member 37 is provided, the wafer from the electrostatic bearing member 37 side is controlled in order to control the position of the wafer W in the Z direction. By blowing gas toward the surface of W, the wafer W can be prevented from coming into contact with the electrostatic bearing member 37. When the position of the wafer W can be stably controlled by the first electrostatic field and the second electrostatic field, the gas blowing by the compressor 38 may be omitted.

  (B4) Since the Z actuators 36A to 36C for driving the electrostatic bearing member 37 in the Z direction at three locations are provided, the positional relationship between the wafer W and the projection optical system PL in the optical axis AX direction (Z direction). In order to control this, the electrostatic bearing member 37 may be driven in the Z direction at three places. Thereby, for example, the offset between the surface of the wafer W and the image plane of the projection optical system PL can be adjusted. The Z actuators 36A to 36C can be omitted.

  (B5) In the exposure apparatus of FIG. 9, the magnetizing units MUA are periodically arranged on the upper surface of the wafer base 41, which is the mounting surface of the XY coil carrier 40C provided with the electrode member 87 (the magnetic generators having different polarities). Are alternately arranged), and a first planar motor 64 including drive coils 63X and 63Y on the bottom surface of the XY coil carrier 40C and the magnetic plate 62 (magnetization pattern) is provided. Then, in order to move the wafer W and the XY coil carrier 40C in the X direction and the Y direction with respect to the projection optical system PL, the XY coil carrier 40C is moved relative to the wafer base 41 (magnetic plate 62) by the first planar motor 64. The XY coil carrier 40C having a complicated configuration including a large number of electrode members 87 and the like can be reduced in size and the movement stroke of the wafer W can be increased.

In FIG. 9, the XY coil carrier 40C itself is regarded as a wafer base (surface plate) by enlarging the upper part of the XY coil carrier 40C where the many electrode members 87 are arranged in the X and Y directions. The wafer W may be driven in the X direction and the Y direction on the wafer base. With this configuration, it is not necessary to provide the first planar motor 64 and the wafer base 41 on the bottom surface of the XY coil carrier 40C.
In each of the above embodiments, the resist-coated surface of the wafer W may be brought into close contact with the glass plate 29 after polishing (CMP or the like).

  The exposure apparatus of the above-described embodiment includes an illumination optical system and a projection optical system that are composed of a plurality of lenses, and a reticle stage or wafer drive apparatus that includes a large number of mechanical parts by incorporating optical adjustment into the exposure apparatus body. Is attached to the exposure apparatus main body, wiring and piping are connected, and further comprehensive adjustment (electrical adjustment, operation check, etc.) is performed. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

The present invention can be similarly applied not only to exposure with a scanning exposure type projection exposure apparatus but also with a batch exposure type projection exposure apparatus.
In the above-described embodiment, a light-transmitting reticle in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used, but instead of this reticle, for example, As disclosed in US Pat. No. 6,778,257, an electronic mask that forms a transmissive pattern, a reflective pattern, or a light emitting pattern based on electronic data of a pattern to be exposed may be used.

  In the above-described embodiment, the substrate is exposed by projecting a pattern image onto the wafer W using the projection optical system PL. However, as disclosed in International Publication No. 2001/035168 pamphlet. The present invention can also be applied to an exposure apparatus (lithography system) that exposes lines and spaces on the wafer W by forming interference fringes on the wafer W. In this case, the projection optical system PL need not be used, and the diffraction grating for forming the interference fringes can be regarded as an optical member.

  Further, when a semiconductor device is manufactured using the exposure apparatus of the above-described embodiment, the semiconductor device includes a step of designing a function and performance of the device, a step of manufacturing a reticle based on this step, and a wafer from a silicon material. A substrate processing step including a step of forming, a step of exposing a reticle pattern to the substrate (wafer) by the exposure apparatus of the above-described embodiment, a step of developing the exposed substrate, a heating (curing) of the developed substrate, and an etching step The device is manufactured through a device assembly step (including a dicing process, a bonding process, and a packaging process) and an inspection step.

  Further, the present invention is not limited to application to a semiconductor device manufacturing process, for example, a manufacturing process of a display device such as a liquid crystal display element formed on a square glass plate or the like, or a plasma display, or imaging. The present invention can be widely applied to manufacturing processes of various devices such as devices (CCD, etc.), micromachines, MEMS (Microelectromechanical Systems), thin film magnetic heads using ceramic wafers as substrates, and DNA chips. Furthermore, the present invention can also be applied to a manufacturing process when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.

    In addition, the exposure apparatus EX of the above embodiment has various subsystems including components such as a holding mechanism of the wafer pack 28 recited in the claims of the present application, with predetermined mechanical accuracy, electrical accuracy, Manufactured by assembling to maintain optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  In addition, this invention is not limited to the above-mentioned embodiment, Of course, a various structure can be taken in the range which does not deviate from the summary of this invention. In addition, the entire disclosure of Japanese Patent Application No. 2006-344993 filed on December 21, 2006, including the specification, claims, drawings, and abstract, is incorporated herein by reference in its entirety. ing.

Claims (47)

In an exposure method of exposing the substrate by irradiating the substrate with exposure light,
In at least a part of the time of transporting the substrate to an exposure position and exposing the substrate with the exposure light,
An exposure method, wherein at least a part of the surface of the substrate is brought into close contact with a flat surface to hold the substrate.   The exposure method according to claim 1, wherein the surface of the substrate is held in close contact with the flat surface by vacuum suction or electrostatic suction.   The exposure method according to claim 1, wherein the surface of the substrate is biased toward the flat surface. In a state where at least a part of the surface of the substrate is in close contact with the flat surface and the substrate is held,
The exposure method according to claim 1, wherein an exposure area on the surface of the substrate is exposed with the exposure light. The flat surface is one surface of a flat plate member that transmits the exposure light,
In a state where the region including the exposed region is adhered to the one surface of the flat plate member and the substrate is held,
The exposure method according to claim 4, wherein the exposed area of the substrate is exposed through the flat plate member with the exposure light. Supplying a liquid that transmits the exposure light to a space including an optical path of the exposure light between the optical member that irradiates the exposure light and the flat plate member;
6. The exposure method according to claim 5, wherein the exposure area of the substrate is exposed with the exposure light through the optical member, the liquid, and the flat plate member.   The exposure method according to claim 6, wherein a liquid-repellent coating is applied to the surface of the flat plate member in contact with the liquid. With the region including the exposed region on the surface of the substrate in close contact with the one surface of the flat plate member,
In order to hold the flat plate member and the substrate integrally in a predetermined positional relationship in the direction in which the exposure light is applied to the optical member,
7. The exposure method according to claim 5, wherein the flat plate member is electrostatically attracted and a gas whose flow rate is controlled is blown onto the flat plate member.   9. The optical member and the substrate are driven in a direction in which the exposure light is irradiated at a plurality of locations in order to control a positional relationship between the substrate and the optical member in the optical axis direction. An exposure method according to 1. Holding the substrate so as to be sandwiched between magnetic members formed by alternately arranging the flat plate-like members and the magnetic generators having different polarities,
In order to move the flat plate member, the substrate, and the magnetic member integrally in a direction intersecting the direction in which the exposure light is irradiated to the optical member,
10. The exposure method according to claim 8, wherein the magnetic member is magnetically driven by a drive unit disposed on the opposite side of the substrate with respect to the magnetic member.   The exposure method according to claim 10, wherein the magnetic member is made of a material having a linear expansion coefficient of approximately zero. In order to drive the substrate in the direction intersecting the direction in which the exposure light is irradiated with respect to the optical member,
The exposure method according to claim 10 or 11, wherein the driving unit is driven in a direction intersecting with a direction in which the exposure light is irradiated. When moving the substrate in a predetermined moving direction with respect to the optical member to expose the substrate,
The exposure method according to claim 12, wherein the magnetic member is driven in the moving direction with respect to the driving unit, and the driving unit is moved in the reverse direction so as to cancel the reaction force.   The first and second stage mechanisms each including a mechanism in which the flat plate member, the substrate, and the magnetic member are integrated and the driving unit are driven in parallel on a common base member. Item 14. The exposure method according to any one of Items 10 to 13. In an exposure method of exposing the substrate by irradiating the substrate with exposure light through an optical member,
Generating a first electrostatic field on the surface side of the substrate;
Generating a second electrostatic field on the back side of the substrate;
Driving the substrate by the second electrostatic field in a direction crossing a direction in which the exposure light is irradiated;
An exposure method comprising driving the substrate in a direction in which the exposure light is irradiated by the first electrostatic field. While changing in time the polarity distribution with respect to the direction intersecting the direction in which the exposure light of the second electrostatic field is irradiated,
The polarity distribution of the first electrostatic field with respect to the direction intersecting the direction irradiated with the exposure light is changed temporally with a polarity distribution corresponding to the polarization charge distribution generated on the surface side of the substrate by the second electrostatic field. 16. The exposure method according to claim 15, wherein the exposure method is performed.   The exposure method according to claim 15 or 16, wherein a gas is blown from the surface side of the substrate toward the substrate in order to control a position of the substrate in a direction in which the exposure light is irradiated.   A first driving unit for generating the first electrostatic field is provided, and the first driving unit is provided at a plurality of locations in order to control a positional relationship between the substrate and the optical member in a direction in which the exposure light is irradiated. The exposure method according to claim 15, wherein the exposure method is driven in a direction in which the exposure light is irradiated. A second driving unit for generating the second electrostatic field is provided, and a magnetic member formed by alternately arranging magnetic generators having different polarities on the mounting surface of the second driving unit is installed.
In order to move the substrate and the second driving unit in a direction crossing a direction in which the exposure light is irradiated to the optical member,
The exposure method according to claim 15, wherein the second driving unit is magnetically driven with respect to the magnetic member. In an exposure apparatus that exposes the substrate by irradiating the substrate with exposure light,
A predetermined member formed with a flat surface;
An exposure apparatus comprising: a holding mechanism for holding at least a part of the surface of the substrate in close contact with the flat surface of the predetermined member.   21. The exposure apparatus according to claim 20, wherein the holding mechanism includes a biasing member that biases the substrate against the flat surface. The holding mechanism is
21. The exposure apparatus according to claim 20, further comprising an airtight chamber that maintains an atmosphere around a region where the surface of the substrate is in contact with the flat surface of the predetermined member at a negative pressure.   21. The exposure apparatus according to claim 20, wherein the holding mechanism includes an electrode unit that generates an electrostatic field in order to electrostatically attract the substrate to the flat surface of the predetermined member. The predetermined member is a flat plate member that transmits the exposure light and has one surface as the flat surface,
In the state where the holding mechanism holds the substrate in close contact with an area including the exposed region on the surface of the substrate on the one surface of the flat plate member,
The exposure apparatus according to any one of claims 20 to 23, wherein the exposure area of the substrate is exposed with the exposure light through the flat plate member. A liquid supply unit that supplies a liquid that transmits the exposure light to a space including an optical path of the exposure light between the optical member that irradiates the exposure light and the flat plate member;
25. The exposure apparatus according to claim 24, wherein the exposed area of the substrate is exposed through the optical member, the liquid, and the flat plate member.   26. The exposure apparatus according to claim 25, wherein a liquid-repellent coating is applied to a surface of the flat plate member in contact with the liquid. In order to hold the flat plate member and the substrate integrally in a predetermined positional relationship in the direction in which the exposure light is applied to the optical member,
A first driving unit disposed on the optical member side with respect to the flat plate member to generate an electrostatic field for sucking the flat plate member and to blow a gas whose flow rate is controlled to the flat plate member; 27. The exposure apparatus according to any one of claims 24 to 26, wherein the exposure apparatus is provided. In order to control the positional relationship in the direction in which the exposure light is irradiated between the substrate and the optical member,
28. The exposure apparatus according to claim 27, further comprising an actuator that drives the first driving unit at a plurality of locations in a direction in which the exposure light is irradiated. The holding mechanism is arranged so as to sandwich the substrate together with the flat plate member, and includes a magnetic member including a region in which magnetic generators having different polarities are alternately arranged,
A flat plate-like second driving unit that is disposed on the opposite side of the optical member with respect to the holding mechanism and generates a magnetic field for driving the magnetic member in a direction crossing the direction in which the exposure light is irradiated. The exposure apparatus according to claim 27 or 28, comprising: an exposure apparatus.   30. The exposure apparatus according to claim 29, wherein the magnetic member is formed of a material having a linear expansion coefficient of approximately zero.   31. The exposure apparatus according to claim 29 or 30, further comprising a third drive unit that drives the second drive unit in a direction that intersects a direction in which the exposure light is irradiated. When moving the substrate in a predetermined moving direction with respect to the optical member to expose the substrate,
The second driving unit drives the magnetic member in the moving direction;
32. The exposure apparatus according to claim 31, wherein the third driving unit moves the second driving unit in a reverse direction so as to cancel a reaction force generated by the driving. A base member;
The first and second stage mechanisms each including the flat plate member, the holding mechanism, and the second driving unit and placed in parallel on the base member are provided. 33. The exposure apparatus according to any one of 32. In an exposure apparatus that exposes a substrate by irradiating the substrate with exposure light via an optical member,
A first driving unit disposed on the surface side of the substrate and generating a first electrostatic field;
A second driving unit disposed on the back side of the substrate and generating a second electrostatic field,
Driving the substrate by the second electrostatic field in a direction crossing a direction in which the exposure light is irradiated;
An exposure apparatus that drives the substrate in a direction in which the exposure light is irradiated by the first electrostatic field.   The polarity distribution of the first electrostatic field with respect to the direction intersecting the direction irradiated with the exposure light is changed temporally with a polarity distribution corresponding to the polarization charge distribution generated on the surface side of the substrate by the second electrostatic field. 35. The exposure apparatus according to claim 34, further comprising a control device. The first driving unit controls the position of the substrate in the direction in which the exposure light is irradiated.
35. The exposure apparatus according to claim 34, further comprising a blower mechanism for blowing gas toward the substrate side. In order to control the positional relationship in the direction in which the exposure light is irradiated between the substrate and the optical member,
37. The exposure apparatus according to claim 34, further comprising an actuator that drives the first driving unit in a direction in which the exposure light is irradiated at a plurality of locations. A base member on which the second driving unit is mounted;
A magnetic member which is installed on the upper surface of the base member and is formed by alternately arranging magnetic generators having different polarities;
A third drive unit installed on the bottom surface side of the second drive unit and driving the second drive unit in a direction crossing a direction in which the exposure light is applied to the magnetic member; The exposure apparatus according to any one of claims 34 to 37, wherein the exposure apparatus is characterized in that A substrate holding device for holding a substrate exposed through an optical member with exposure light,
A predetermined member formed with a flat surface;
A substrate holding apparatus, comprising: a holding mechanism that holds the substrate by bringing at least a part of the surface of the substrate into close contact with the flat surface of the predetermined member. The holding mechanism is
40. The substrate holding apparatus according to claim 39, further comprising an urging member that urges the surface of the substrate on the flat surface. The holding mechanism is
41. The substrate holding apparatus according to claim 40, further comprising an airtight chamber for maintaining an atmosphere around a region where the surface of the substrate is in contact with the flat surface of the predetermined member at a negative pressure.   42. The urging member includes a flat diaphragm that forms a part of the hermetic chamber, and an elastic member interposed between the diaphragm and the substrate. Substrate holding device.   43. The substrate holding apparatus according to any one of claims 39 to 42, wherein the predetermined member is a flat plate member that transmits the exposure light and has one surface thereof as the flat surface. The substrate is exposed by the exposure light through the optical member, a predetermined liquid, and the flat plate member,
44. The substrate holding apparatus according to claim 43, wherein a liquid-repellent coating is applied to a surface of the flat plate member that contacts the liquid.   The said holding | maintenance mechanism is arrange | positioned so that the said board | substrate may be pinched | interposed with the said flat plate-shaped member, It has a magnetic member containing the area | region where the magnetic generators from which polarity differs were arranged alternately. Substrate holding device.   46. The substrate holding apparatus according to claim 45, wherein the magnetic member is made of a material having a linear expansion coefficient of approximately zero.   A device manufacturing method using the exposure method according to claim 1.

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