JPWO2007114306A1 - Light emitting device - Google Patents

Light emitting device Download PDF

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JPWO2007114306A1
JPWO2007114306A1 JP2008508639A JP2008508639A JPWO2007114306A1 JP WO2007114306 A1 JPWO2007114306 A1 JP WO2007114306A1 JP 2008508639 A JP2008508639 A JP 2008508639A JP 2008508639 A JP2008508639 A JP 2008508639A JP WO2007114306 A1 JPWO2007114306 A1 JP WO2007114306A1
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light
layer
light emitting
emitting element
emitting device
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JP5047162B2 (en
Inventor
形部 浩介
浩介 形部
作本 大輔
大輔 作本
真吾 松浦
真吾 松浦
裕樹 森
裕樹 森
三宅 徹
徹 三宅
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京セラ株式会社
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Priority to JP2006090191 priority
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Priority to JP2007018692 priority
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Priority to PCT/JP2007/057000 priority patent/WO2007114306A1/en
Priority to JP2008508639A priority patent/JP5047162B2/en
Publication of JPWO2007114306A1 publication Critical patent/JPWO2007114306A1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An object of the present invention is to provide a high-luminance light-emitting device that can emit light emitted from a light-emitting element to the outside of the light-emitting device with high efficiency. A light-emitting device mounted on a substrate has a substrate, a translucent electrode, a first surface facing the substrate, and a second surface. The element 3 is made of a first translucent material having a first refractive index smaller than that of the translucent electrode 34, and is provided on the substrate 2 so as to cover the translucent electrode 34 of the light emitting element 3. A first layer 4 and a second layer 5 made of a second light-transmitting material having a second refractive index larger than the first refractive index and covering the light emitting element 3 and the first layer are provided. .

Description

  The present invention relates to a light emitting device using a light source such as a light emitting diode element.

In recent years, for example, a light emitting device such as a lighting fixture has been developed using a light emitting diode lamp. A light-emitting device using this light-emitting diode lamp converts light generated by a light-emitting diode element or the like into light having a different wavelength by using a fluorescent material or the like to produce output light such as white light. In lighting fixtures using such light-emitting diode elements, low power consumption and long life are expected.
JP 2004-349726 A

  While light-emitting devices using light sources such as the above-described light-emitting diode elements are expected to be further spread, it is important to improve the light emission luminance. With regard to the improvement of the emission luminance, it is important to improve the extraction efficiency of the light generated by the light source.

  The present invention has been devised in view of such problems, and an object thereof is to improve the light emission luminance of a light emitting device.

  The light-emitting device of the present invention has a lower surface on which a light-transmitting electrode is formed, and includes a light-emitting element mounted on a substrate and a first light-transmitting material having a first refractive index. The first layer is disposed, and the second layer is made of a second light-transmitting material having a second refractive index higher than the first refractive index, and covers the light emitting element and the first layer.

  The present invention has a first layer disposed on a substrate and a second layer having a refractive index higher than that of the first layer, whereby the light generated by the light emitting element is highly efficiently transmitted to the outside of the light emitting device. The luminance of the light emitting device can be increased.

  Embodiments of a light emitting device of the present invention will be described in detail with reference to the drawings.

(First embodiment)
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view showing a light emitting device 1 according to the first embodiment. In FIG. 1, a part of the configuration of the light emitting device 1 is not illustrated to show the internal configuration of the light emitting device 1. 2 is a cross-sectional view of the light emitting device 1 shown in FIG.

  The light-emitting device 1 of the present embodiment has a base 2 and a first surface 3A on which a translucent electrode 34 is formed. The light-emitting element 3 mounted on the base 2 and the translucency of the light-emitting element 3 A first layer 4 provided on the substrate 2 so as to cover the conductive electrode 34, and a second layer 5 covering the light emitting element 3 and the first layer 4. Here, covering the translucent electrode 34 of the light emitting element 3 means that the first layer 4 is in contact with at least a part of the surface 34 a of the translucent electrode 34 of the light emitting element 3. Covering the first layer 4 means that the second layer 5 is in contact with at least a part of the surface s of the first layer 4.

In the present embodiment, the first layer 4 is made of a first light-transmitting material having a first refractive index N1, and the second layer 5 is a second layer having a second refractive index N2. Made of a translucent material. The first refractive index N 1 is smaller than the refractive index N 0 of the translucent electrode 34 of the light emitting element 3, and the second refractive index N 2 is larger than the first refractive index N 1 . Note that the translucency of the translucent electrode 34, the first translucent material 3, and the second translucent material 4 formed in the light emitting element 3 is emitted from the light emitting layer 32 of the light emitting element 3. It means that at least part of the light can be transmitted.

  The light emitting device 1 according to the present embodiment further includes a wavelength conversion member (wavelength conversion means) 6 that covers the second layer 5 and a frame 9 that surrounds the light emitting element 3. Here, covering the second layer 5 means that the wavelength conversion member 6 is provided at a position where the light emitted from the second layer 5 reaches.

  In the present embodiment, the base 2 has a first surface 2a on which the light emitting element 3 is mounted and a second surface 2b mounted on an external substrate. A frame 9 having a reflective surface 9 a surrounding the light emitting element 3 is disposed on the first surface 2 a of the base 2. Here, the reflection surface 9 a of the frame body 9 reflects light of at least a part of the wavelength of the light generated by the light emitting element 3 in the light emission direction D. The light emission direction D is the traveling direction of the light output from the light emitting device 1, and is upward (the positive direction of the z axis in the virtual xyz coordinates) in FIG. In FIG. 1, the light-emitting device 1 is shown in a state of being mounted on an xy plane in virtual xyz coordinates. The first surface 2 a of the base 2 corresponds to a plurality of electrodes formed on the light emitting element 3, and is electrically connected to the plurality of electrodes and led out to the second surface 2 b of the base 2. The first wiring pattern 7A and the second wiring pattern 7B are provided.

  As shown in FIG. 3, the light-emitting element 3 includes a first surface 3 </ b> A on which a translucent electrode 34 is formed and facing the base 2, and a second surface 3 </ b> B disposed in the light emitting direction D (FIG. 3). A light emitting diode. The translucent electrode 34 has a function of transmitting light emitted from the light emitting layer 32 of the light emitting element 3 and diffusing a current to the entire light emitting element 3. In the configuration shown in FIG. 1, the light emitting element 3 is flip-chip mounted on the substrate 2 and generates light having at least a part of wavelengths of 210 nm to 470 nm.

As shown in FIG. 3, the light-emitting element 3 of the present embodiment is a light-emitting diode including a base 30, an n-type semiconductor layer 31, a light-emitting layer 32, and a p-type semiconductor layer 33. The n-type semiconductor layer 31 of the light-emitting element 3 is provided with an n-type electrode (first conductivity type electrode) 35, and the p-type semiconductor layer 33 of the light-emitting element 3 has a light-transmitting property having a refractive index N 0 . An electrode 34 and a p-type electrode (second conductivity type electrode) 36 disposed on the translucent electrode 34 are provided. Such an n-type electrode 35 is made of, for example, Ti / Al, and the p-type electrode 36 is made of, for example, Au, and is partially provided on the translucent electrode 34.

  As shown in FIG. 4, the first conductivity type electrode 35 of the light emitting element 3 in the present embodiment is connected to the first wiring pattern 7A via the first conductive bonding agent 10A. The second conductivity type electrode 36 of the light emitting element 3 is connected to the second wiring pattern 7B via the second conductive bonding agent 10B. The light emitting element 3 emits light from the light emitting layer 32 when a voltage is applied thereto. Part of the light emitted from the light emitting layer 32 travels to the first surface (downward in FIG. 4) 3A side of the light emitting element 3, and part of the light travels to the side of the light emitting element 3. proceed. Here, the first surface 3A side of the light emitting element 3 in FIG. 4 is the negative direction of the z axis in virtual coordinates, and the side of the light emitting element 3 is the x axis direction and y in the virtual coordinates. Such as axial direction.

The translucent electrode 34 of the light emitting element 3 is made of, for example, a translucent conductive film. Examples of the light-transmitting conductive film include ITO and ZnO having a refractive index N 0 of about 2.0. By using an oxide as the translucent electrode 34, erosion of the electrode by the first and second conductive bonding agents 10A and 10B made of Au—Sn or the like is reduced. Further, when a light-transmitting electrode 34 of the light-emitting element 3 is made of a metal thinned to such a degree as to have a light-transmitting property, examples of such a thinned metal include aluminum.

  In the present embodiment, the light emitting element 3 is covered with the first layer 4 and the second layer 5. The first layer 4 of the present embodiment covers the translucent electrode 34 of the light emitting element 3 and is provided on the base 2. The second layer 5 covers the light emitting element 3 and the first layer 4. In the configuration shown in FIG. 1, the first layer 4 covers the surface 34 a of the translucent electrode 34 of the light emitting element 3 and is provided on the first surface 2 a of the base 2. The second layer 5 covers the second surface (upper surface in FIG. 2) 3 </ b> B of the light emitting element 3 and has a lower surface s in contact with the first layer 4.

  In FIG. 4, the lower surface s (interface between the first layer 4 and the second layer 5) of the second layer 5 is provided above the light emitting layer 33 of the light emitting element 3. With such a configuration, light can be emitted more efficiently than the light emitting element 3.

The first layer 4 is made of a first translucent material having a first refractive index N1. The first refractive index N 1 and the refractive index N 0 of the translucent electrode 34 of the light emitting element 3 have a relationship of N 1 <N 0 . Such a first layer 4 is in contact with the surface 34a of the translucent electrode 34 of the light emitting element 3, and an interface (first light reflecting means) between the translucent electrode 34 and the first layer 4 is formed. The light traveling from the translucent electrode 34 to the space on the substrate 2 side of the light emitting element 3 has a function of guiding the light in the light emitting direction D by total reflection.

The second layer (translucent layer) 5 is made of a second translucent material having a second refractive index N2. The second refractive index N 2 and the first refractive index N 1 have a relationship of N 1 <N 2 . Such a second layer 5 is in contact with the upper surface s of the first layer 4, and the interface (second light reflecting means) between the first layer 4 and the second layer 5 is the second layer 5. It has a function of guiding light going from the layer 5 to the substrate 2 side in the light emission direction D by total reflection.

The first light transmissive material is made of, for example, a fluororesin having a first refractive index N 1 of about 1.3, and the second light transmissive material has a second refractive index N 2 of, for example, It consists of about 1.4 silicon resin. By using these resins, physical and chemical stability against the emitted light and heat from the light emitting element 3 can be obtained. In particular, when the first light-transmitting material is made of a fluororesin, the first surface 2a in the region where the first layer 4 of the base 2 is provided is subjected to a roughening treatment, whereby the first The layer 4 becomes difficult to peel from the substrate 2. Examples of the roughening method include a blast method using a fine particle blast material and a sputtering method.

In the light emitting device 1 according to the present embodiment, the translucent electrode 34 of the light emitting element 3 is in contact with the first layer 4 having a first refractive index N 1 that is smaller than the refractive index N 0 of the translucent electrode 34. The first layer 4 is in contact with the second layer 5 having a second refractive index N 2 that is smaller than the first refractive index N 1 of the first layer 4. With this configuration, the light-emitting device 1 according to the present embodiment can reduce the energy loss of light emitted from the light-emitting element 3 and travel in the light emission direction D, and the light emission intensity of the light-emitting device 1 can be improved. It becomes.

  Here, the optical path of the light generated by the light emitting layer 33 of the light emitting element 3 will be described. As shown in FIG. 4, among the light generated by the light emitting layer 33 of the light emitting element 3, the light L1 emitted toward the translucent electrode 34 (the negative direction of the z axis in the virtual coordinates shown in FIG. 4) is The light is reflected at the interface between the translucent electrode 34 and the first layer 4 (the surface 34a of the translucent electrode 34) and proceeds to the second surface 3B side of the light emitting element 3. Thereafter, the light L1 traveling inside the light emitting element 3 is emitted from the light emitting element 3 to the second layer 5 and travels in the light emitting direction D (the positive direction of the z axis in the virtual coordinates shown in FIG. 4). . Of the light radiated from the light emitting element 3 to the second resin 5, the light L <b> 2 that is reflected by the reflecting surface 9 a of the frame body 9 and travels toward the base 2, as shown in FIG. 4, as shown in FIG. 4. And is reflected at the interface s between the second layer 5 and the light emission direction D.

  In the structure of the conventional light emitting device, the light is generated by the light emitting layer 33 of the light emitting element 3 and proceeds to the base 2 side, the first surface 2a of the base 2, the first and second conductivity type electrodes 35 and 36, and the first In the present embodiment, the light absorbed by the first and second conductive bonding agents 10A and 10B is the interface 34a between the translucent electrode 34 and the first layer 4 as described above, or the first Is reflected at the interface s between the layer 4 and the second layer 5. Therefore, the light output of the light emitting device 1 in the present embodiment is increased.

In the present embodiment, the refractive index N 0 of the translucent electrode 34 of the light emitting element 3 is larger than the second refractive index N 2 of the second layer 5, and the refractive index N of the translucent electrode 34. 0, the first refractive index N 1, and the second refractive index N 2 has a relation of N 1 <N 2 <N 0. By having such a relationship, the luminance of the light emitting device 1 can be improved even when the refractive index of the atmosphere outside the light emitting device 1 is taken into consideration. That is, the refractive index N 2 of the second layer 5 positioned on the outer side (light emission direction D side) of the light emitting device 1 than the light emitting element 3 is larger than the refractive index N 1 of the first layer, and by being adjusted smaller than the refractive index N 0 of the translucent electrode 34, the refractive index N 2 of the second layer 5 is not too extremely large relative to the refractive index of the light emitting device 1 outside air . For this reason, loss of light energy traveling from the second layer 5 to the outside of the light emitting device 1 can be reduced.

In particular, the translucent electrode 34 of the light emitting element 3 is made of ITO (refractive index N 0 about 2.0), the first translucent material is made of fluororesin (refractive index N 1 about 1.3), When the second layer 5 is made of silicon resin (refractive index N 2 of about 1.4), the light generated by the light emitting element 3 is directed in the light emitting direction D with high efficiency, so that the light emission intensity of the light emitting device 1 is improved. .

  In the present embodiment, the wavelength conversion member 6 covers the second layer 5 and is disposed on the light emitting element 3. The wavelength conversion member 6 is a resin in which a fluorescent substance is mixed, and the first light emitted from the light emitting element 3 has a peak wavelength in a second wavelength range different from the wavelength range of the first light. It has a function of converting it into second light and outputting it. In the configuration shown in FIG. 1, the wavelength conversion member 6 closes the opening of the frame body 9 and has a sheet shape.

  In the case where the first light generated by the light-emitting element 3 has at least a part of wavelengths of 440 nm to 470 nm (blue), the fluorescent material may be 565 nm to 590 nm (which has a complementary color relationship with the emission color of the light-emitting element 2). A material that emits second light having at least a part of the wavelength of yellow) is used. Such a light emitting device 1 emits white light, which is a mixed light of blue light generated by the light emitting element 3 and transmitted through the wavelength conversion member 6 and yellow light emitted from the wavelength conversion member 6, in the light emission direction D. To do.

  As another combination of the light emitting element 3 and the fluorescent material, when the light emitting element 3 generates the first light having at least a part of wavelengths of 440 nm to 470 nm (blue), the fluorescent material may be 520 nm to 565 nm (green). ) That emits the second light having at least a part of the wavelength and the third light having at least a part of the wavelength of 625 nm to 740 nm (red). In the case of the combination of the light emitting element 3 and the fluorescent material, the light emitting device 1 is a mixture of blue light generated by the light emitting element 3 and transmitted through the wavelength conversion member 6 and green light and red light emitted from the wavelength conversion member 6. White light as light is emitted in the light emission direction D.

  As another combination of the light emitting element 3 and the fluorescent material, when the light emitting element 3 generates the first light having at least a part of wavelengths of 210 nm to 400 nm (ultraviolet light), the fluorescent material is 440 nm to 470 nm. Second light having at least some wavelengths (blue), third light having at least some wavelengths from 520 nm to 565 nm (green), and at least some wavelengths from 625 nm to 740 nm (red). What emits the 4th light which has is used. In the case of the combination of the light emitting element 3 and the fluorescent material, the light emitting device 1 emits white light that is a mixed light of blue, green light, and red light emitted from the wavelength conversion member 6 in the light emitting direction D.

(Second Embodiment)
A second embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a cross-sectional view illustrating a configuration of the light emitting device 12 according to the second embodiment. FIG. 6 is a perspective view showing the configuration of the light emitting element 23 in the present embodiment.

  The light emitting device 12 according to the present embodiment includes a base layer 2, a light emitting element 23 mounted on the base body 2, and a first layer 4 provided on the base body 2 so as to cover the translucent electrode 234 of the light emitting element 23. And a second layer 5 covering the light emitting element 23 and the first layer 4.

  As shown in FIG. 6, the light emitting element 23 includes a first surface 23 </ b> A (a lower surface in FIG. 6) on which a translucent electrode 234 is formed and facing the base 2, and a second surface disposed in the light emitting direction D. This is a light emitting diode having a surface 23B (upper surface in FIG. 6). The translucent electrode 234 has a function of transmitting the light emitted from the light emitting layer 232 of the light emitting element 23 and diffusing a current throughout the light emitting element 23.

The light-emitting element 23 of this embodiment is a light-emitting diode that includes a base 230, an n-type semiconductor layer 231, a light-emitting layer 232, and a p-type semiconductor layer 233. An n-type electrode (first conductivity type electrode) 235 is provided on the n-type semiconductor layer 231 of the light-emitting element 23, and a light-transmitting material having a refractive index N 0 is formed on the p-type semiconductor layer 233 of the light-emitting element 23. A conductive electrode 234 and a p-type electrode (second conductivity type electrode) 236 disposed on the translucent electrode 234 are provided. Such an n-type electrode 235 is made of, for example, Ti / Al, and the p-type electrode 236 is made of, for example, Au, and is partially provided on the translucent electrode 234.

  As shown in FIG. 7, the first conductivity type electrode 235 of the light emitting element 23 in the present embodiment is electrically connected to the first wiring pattern 7A by a wire 11 such as a gold wire. Further, the second conductivity type electrode 236 of the light emitting element 23 is electrically connected to the second wiring pattern 7B via the conductive adhesive 10C.

  In the configuration shown in FIG. 7, the first layer 4 covers the surface 234 a of the translucent electrode 234 and is provided on the first surface 2 a of the base 2. The second layer 5 covers the second surface 23B of the light emitting element 23 and is provided on the first layer 4.

In the present embodiment, the first refractive index N 1 and the refractive index N 0 of the translucent electrode 234 of the light emitting element 23 have a relationship of N 1 <N 0 . Such a first layer 4 is in contact with the surface 234 </ b> A of the translucent electrode 234 of the light emitting element 23.

  The light emitting element 23 emits light from the light emitting layer 232 when a voltage is applied thereto. Here, the optical path of the light generated by the light emitting layer 233 of the light emitting element 23 will be described. As shown in FIG. 7, out of the light generated by the light emitting layer 233 of the light emitting element 23, the light L1 emitted toward the translucent electrode 234 (in the negative direction of the z axis in the virtual coordinates shown in FIG. 7) is The light is reflected at the interface between the translucent electrode 234 and the first layer 4 (the surface 234a of the translucent electrode 234) and proceeds to the second surface 23B side of the light emitting element 23. Thereafter, the light L1 traveling inside the light emitting element 23 enters the second layer 5 from the light emitting element 23 and travels in the light emitting direction D. Of the light that has entered the second resin 5 from the light emitting element 23, the light L2 traveling toward the base 2 is reflected at the interface s between the first layer 4 and the second layer 5 as shown in FIG. Then, it proceeds in the light emission direction D.

  As described above, the light-emitting device 12 according to the present embodiment has a difference in refractive index between the translucent electrode 234 and the first layer 4 of the light-emitting element 23 and refraction between the first layer 4 and the second layer 5. The light emission luminance is enhanced by guiding the light generated by the light emitting element 23 in the light emitting direction D due to the total reflection of light caused by the rate difference.

(Third embodiment)
A third embodiment of the light-emitting device of the present invention will be described with reference to FIGS. 8 to 9 are cross-sectional views illustrating a plurality of configuration examples of the light emitting device 13 according to the third embodiment. The light emitting element 3 of the light emitting device 13 shown in FIG. 8 is flip-chip connected to the first and second wiring patterns 7A and 7B on the base 2, and the light emitting element 23 of the light emitting device 13 shown in FIG. 2 is electrically connected to the first wiring pattern 7A on the 2 via the bonding wire 11.

  The light emitting device 13 in the present embodiment has a side surface 3s (23s) in which the light emitting element 3 (23) is in contact with the first layer 4. In such a configuration, the thickness of 4n in the vicinity of the side surface 3s (23s) of the light emitting element 3 of the first layer 4 is thicker than the other portion 4o of the first layer 4. Here, the thickness of the first layer 4 refers to the length from the first surface 2A of the base 2 to the upper surface s of the first layer 4, and is in the z-axis direction at the virtual coordinates in FIGS. A scalar. Further, the fact that the thickness of the vicinity 4n of the first layer 4 is thicker than that of the other portion 4o of the first layer 4, as shown in enlarged views in FIGS. That is, the thickness 4x of the portion attached to the side surface 3s (23s) of 3 is thicker than the thickness 4y of other portions of the first layer 4. With such a configuration, the light-emitting device 13 of the present embodiment can firmly fix the light-emitting element 3 to the base 2 by the first layer 4.

  8 to 9, the first layer 4 has a small thickness from the side surface 3 s of the light emitting element 3 to the inner peripheral surface 9 a of the frame body 9. That is, in FIGS. 8 to 9, the upper surface s of the first layer 4 has a configuration that decreases from the end of the light emitting element 3 toward the inner peripheral surface 9 a of the frame body 9. Is thickest at a position in contact with the side surface 3s (23s) of the light emitting element 3.

  8 to 9, the first layer 4 is partially disposed on the substrate 2. That is, the first layer 4 covers the translucent electrode 34 (234) of the light emitting element 3 (23), and is disposed apart from the inner peripheral surface 9a of the frame body 9. With such a configuration, the light-emitting device 13 illustrated in FIGS. 8 to 9 can reduce light absorption of the light-emitting element 3 (23) on the inner peripheral surface 9 a of the frame body 9.

  In FIG. 9, the bonding wire 11 that connects the first conductivity type electrode 235 of the light emitting element 23 and the first wiring pattern 7 </ b> A is not covered with the first layer 4. That is, the bonding wire 11 is covered only with the second layer 5 made of the second light-transmitting material. With such a configuration, since the stress caused by the difference in thermal expansion coefficient between the first light transmissive material and the second light transmissive material is difficult to be applied to the bonding wire 11, the reliability of the light emitting device 13 is improved. To do.

  8 to 9, the wavelength conversion layer 6 is fixed on the base 2 via a spacer 30 and has a curved surface portion. By configuring the wavelength conversion layer 6 with a curved surface, light with uniform illuminance can be emitted.

(Fourth embodiment)
A light emitting device according to a fourth embodiment of the present invention will be described with reference to FIGS. 10 to 13 are enlarged views of main parts showing a plurality of configuration examples of the light emitting device according to the fourth embodiment.

  In the present embodiment, the translucent electrode 23 (234) has the second layer 5 provided on the base 2 so as to be covered with the air layer 44. That is, the light emitting device of the present embodiment has a structure in which the first layer 44 is an air layer in the light emitting devices of the first and second embodiments. Such a second layer 5 is made of a translucent material, for example, silicon resin.

  In the structure shown in FIGS. 10 to 13, a void 44 having a refractive index smaller than that of the translucent electrode 34 is disposed on the surface 34 a (234 a) of the translucent electrode 34 (234) of the light emitting element 3 (23). ing. Therefore, light traveling from the translucent electrode 34 (234) to the first surface 3A (23A) side of the light emitting element 3 (23) is reflected at the interface between the translucent electrode 34 (234) and the air layer 44. Thus, the light emitted from the light emitting layer 32 of the light emitting element 3 can be efficiently extracted from the light emitting element 3. Such an air layer 44 may be formed of a plurality of bubbles as shown in FIGS.

  11 and 13, the bonding wire 11 that connects the first conductivity type electrode 35 of the light-emitting element 3 and the first wiring pattern 7A does not pass through the inside of the air layer 44 but the second layer 5. Only covered. With such a configuration, the stress applied to the bonding wire 11 is reduced, so that the connection reliability between the first wiring pattern 7A and the first conductive type electrode 35 and the bonding wire 11 is improved.

(Fifth embodiment)
A light emitting device according to a fifth embodiment of the present invention will be described. 14 (a) and 15 (a) are cross-sectional views showing the light emitting device 15 in the present embodiment. FIGS. 14 (b) and 15 (b) are FIGS. 14 (a) and 15 (a). It is a principal part enlarged view shown in FIG. In FIG. 14, the first conductivity type electrode 36 and the second conductivity type electrode 35 of the light emitting element 3 are flip-chip connected to the mounting portion 56 of the base 52. In FIG. 15, the second conductivity type electrode 35 of the light emitting element 3 is wire-bonded to the first wiring pattern 7 </ b> A formed on the substrate 2.

  In the present embodiment, the light emitting device 15 includes a base 52 having a mounting portion 56 protruding in the light emitting direction D. The mounting portion 56 of the light emitting element 3 in the present embodiment includes a mounting surface 56A of the light emitting element 3 smaller than the translucent electrode 34 of the light emitting element 3, and a first inclined surface that is inclined at an angle θ1 with respect to the mounting surface 56A. 56B.

  The light emitting element 3 (23) of the present embodiment has a first surface 3A (23A) facing the mounting surface 56A of the mounting portion 56, and a second surface 3B (23B). It is mounted on 56 mounting surfaces 56A. With this configuration, of the light generated by the light emitting element 3 (23), the light is emitted from the translucent electrode 34 (234) of the light emitting element 3 (23) to the base 2 side (below the light emitting element). It is possible to reduce the trapped light from being confined in the region between the light emitting element 3 (23) and the mounting surface 56A of the light emitting element 3. Therefore, the light emission intensity of the light emitting device 1 can be improved.

  14 and 15 includes a second inclined surface 56C that is inclined at an angle θ2 with respect to the mounting surface 56A. 14 and 15, the mounting portion 56 has a structure in which the size is reduced in plan view as it approaches the mounting surface 56a, and the inclination angles θ1 and θ2 are equal. With such a configuration, the rigidity of the mounting portion 56 can be reduced, and even if stress due to heat during operation of the light emitting element 3 is applied to the mounting portion 56, the stress can be efficiently relieved throughout the mounting portion 56. . For this reason, the stress which arises with respect to the light emitting element 3 from the mounting part 56 can also be reduced, and the characteristic of the light-emitting device 1 can be improved.

Such a mounting portion 56 is formed of, for example, a resin containing TiO 2 and is white. In the case of white, the light emitted from the light emitting element 3 can be efficiently reflected, and the light emission intensity of the light emitting device 15 can be further improved.

  The mounting portion 56 may be provided so as to penetrate the base 52 as shown in FIGS. 16 and 17. 16 and 17, the side surface 56s of the portion fixed to the base 52 of the mounting portion 56 has a plurality of step shapes. With such a configuration, the mounting portion 56 and the base 52 can be firmly fixed.

  Further, as shown in FIGS. 18 and 19, the mounting portion 56 and the base 52 may be integrally formed. By forming the mounting portion 56 and the base body 52 from the same material having the same thermal expansion coefficient, the stress can be relieved and the illuminance unevenness of the light emitting device 15 can be reduced.

(Sixth embodiment)
A sixth embodiment of the light emitting device of the present invention will be described. The light emitting device in the present embodiment has a roughened region 62 on the first surface 2a of the base 2 on which the light emitting element 3 is mounted. 20 to 22, the first layer 4 is disposed on the roughened region 62 of the substrate 2.

  In the configuration shown in FIG. 20A, the light emitting element 3 is flip-chip connected to the first surface 2 a of the base 2. In the configuration shown in FIG. 20B, the bonding wire 11 is connected to the second conductivity type electrode 235 of the light emitting element 23.

  In the present embodiment, the base body 2 has a roughened region 62 facing the translucent electrode 34 (234) of the light emitting element 3 (23). Thus, when the base | substrate 2 has an uneven | corrugated rough surface, the light radiated | emitted from the light emitting element 3 to the downward direction of the light emitting element 3 becomes easy to be reflected, and the light emission intensity | strength of the light emitting device 1 is improved.

  20 (a) and 20 (b), the substrate 2 has a roughened region immediately below the translucent electrode 34 (234) of the light emitting element 3 (23). With such a configuration, the light reflection efficiency can be improved particularly on the surface of the base 2 in a region where light emitted from the inside of the light emitting element 3 (33) is easily irradiated.

  Another example of the light-emitting device of this embodiment is shown in FIGS. In the light emitting device shown in FIGS. 21A and 21B, the surface 62 of the base 2 at a position facing the light emitting element 3 (23) and the surface 67B of the second wiring pattern 7B are roughened. Yes. Such a light-emitting device can efficiently reflect light generated from the light-emitting layer 33 (233) of the light-emitting element 3 (23) and transmitted through the translucent electrode 34 (234) to the base 2 side. Therefore, the luminance of the light emitting device is improved.

  Other examples of the light-emitting device of this embodiment are shown in FIGS. 22 (a) and 22 (b), an air layer 44 is disposed on the surface of the translucent electrode 34 (234) of the light emitting element 3 (23). Further, the surface 62 of the base 2 at a position facing the translucent electrode 34 of the light emitting element 3 and the surface 67B of the second wiring pattern 7B are roughened. With such a structure, even when light generated from the light emitting element 3 (23) is not reflected at the interface between the translucent electrode and the air layer 44 and proceeds to the base 2 side, Light can be efficiently reflected in the roughened region 62 and the roughened region 67B of the second wiring pattern 7B.

  In the present embodiment, the surface roughening is performed by, for example, blasting a fine particle blast material or sputtering.

  In addition, as a method of partially roughening the surfaces 62 and 67B of the region where the light emitting element 3 of the base 2 and the first and second wiring patterns 7A and 7B is mounted, the base 2 and the second wiring pattern are used. A film made of ceramic particles may be formed on the surface of 7B. Such a film has a function of diffusing light emitted from the light emitting element 3 (23). In particular, when the light-emitting element 3 (23) is a light-emitting diode that generates blue light, titanium oxide is used as a material for the film. Thereby, light absorption on the surface of the substrate 2 and the surface of the second wiring pattern 7B is reduced, and the light emission intensity of the light emitting device is improved. Further, when the light emitting element 3 (23) is a light emitting diode that generates ultraviolet light, zirconium oxide that hardly absorbs ultraviolet light is used as a material of the film. Thereby, the emitted light intensity of a light-emitting device can be improved.

(Seventh embodiment)
A seventh embodiment of the light emitting device of the present invention will be described. 23 to 29 are cross-sectional views showing various examples of the light emitting device 17 of the present embodiment. The light emitting device 17 includes a light emitting element 73 mounted on the base 2, a first layer 74 that covers the light emitting element 73 and is provided on the base 2, and covers the surface of the light emitting element 73 on the first layer 74. And a second layer 75 provided on the substrate.

  In the present embodiment, the first surface 2a of the substrate 2 is made of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), Alternatively, a reflective layer made of a metal such as Cu is provided by a vapor deposition method or a plating method. Thereby, it is possible to reduce the transmission of the first light generated by the light emitting element 73 to the inside of the base 2, and the first light generated by the light emitting element 73 is efficiently reflected above the base 2. The

  The light emitting device 17 according to the present embodiment includes a first layer 74 having a refractive index smaller than that of the second layer 75 between the second layer 75 and the substrate 2. With this configuration, of the first light generated by the light emitting element 73, a part of the light L <b> 1 emitted below the light emitting element 73 is an interface between the first layer 74 and the second layer 75. Is totally reflected. Of the first light generated by the light emitting element 73, the light L3 emitted below the light emitting element 73 and not totally reflected at the interface between the first layer 74 and the second layer 75 is the first light. Incident into the layer 74. As shown in FIG. 23C, the light L3 incident on the first layer 74 is refracted at a refraction angle α2 larger than the incident angle α1 incident on the first layer 74 from the second layer 75, After being reflected by the upper surface of the substrate 2, it is incident on the second layer 75 again.

  Here, the distance between the position i where the light of the second layer 75 is incident and the position o where the light of the second layer 75 is emitted is defined as the first structure composed of only the second layer 75. 71 (FIG. 23B) and the second structure 72 (FIG. 23C) having the same thickness as the first structure 71 and including the first layer 74 and the second layer 75. Compare. In the second structure 72 having the first layer 74 shown in FIG. 23C, the distance Y between the position i where the light of the second layer 75 is incident and the position o where the light is emitted is shown in FIG. It is larger than the distance X between the position i where the light of the second layer 75 in the first structure 71 shown in b) is incident and the position o where the light is emitted. Therefore, as shown in FIG. 23C, the light incident on the structure having the first layer 74 is emitted from the incident position i to a position o further away.

  That is, of the first light generated by the light emitting element 73 and traveling into the first layer 74, an angle larger than the critical angle with respect to the perpendicular of the interface between the first layer 74 and the second layer 75. The light incident at is totally reflected at the interface according to Snell's law. Further, a part of the light incident at an angle smaller than the critical angle with respect to the normal of the interface passes through the interface and enters the first layer 74. The light incident on the first layer 74 is refracted at a refraction angle larger than the incident angle. That is, the light that has entered the first layer 74 travels at a shallow angle with respect to the surface of the first layer 74, is reflected by the upper surface of the base 2, enters the second layer 75 again, and then enters the second layer 75. The light is emitted from the surface of the layer 75. Then, the distance between the light incident position i and the light emitting position o on the surface of the second layer 75 becomes larger than that in the case of FIG. Will be emitted outside the layer 75.

  As a result, out of the first light generated by the light emitting element 73, light emitted below the light emitting element 73 is totally reflected at the interface between the first layer 74 and the second layer 75 with low loss. Then, it propagates through the second layer 75 and is emitted to the outside of the second layer 75. Of the first light generated by the light emitting element 73, the light incident on the first layer 74 is further diffused by the difference in refractive index between the first layer 74 and the second layer 75. . Then, since these lights propagate upward and are emitted to the outside of the light emitting device, the light emission intensity of the light emitting device (the radiant flux emerging within a small solid angle in a certain direction from the point radiation source is divided by the solid angle). Value) and irradiance (a value obtained by dividing the radiant flux incident on a surface by the area of the surface) and unevenness of radiation intensity (nonuniformity) on the irradiated surface is suppressed.

  Further, as shown in FIGS. 24A to 24C, it is more preferable that the surface of the first layer 74 on which light from the light emitting element 3 is incident is formed as an uneven surface 74a. Thereby, the light from the light emitting element 3 is diffusely reflected on the surface of the first layer 74 and the light emitted from the light emitting element 3 to the side is irradiated on the side surface of the convex portion 74b of the concave and convex surface 74a. It is possible to reduce the incident angle formed between the perpendicular line standing on the side surface of the portion 74b and the incident light. Accordingly, the light emitted from the light emitting element 3 is easily incident on the first layer 74 without being totally reflected. As a result, the radiant flux of light incident on the first layer 74 from the light emitting element 3 increases, and the incident position of light using the difference in refractive index between the first layer 74 and the first layer 74. It is possible to increase the distance between and the emission position.

  The uneven surface 74a may be formed by forming a hemispherical protrusion 74b on the surface of the first layer 74 as shown in FIG. 24 (a), or a triangular shape as shown in FIG. 24 (b). The convex portions 74b having a shape may be formed, or as shown in FIG. 24C, the hemispherical convex portions 74b that are independent from each other may be arranged on the surface of the base 2. .

  Further, as shown in FIG. 24B, in the case of the triangular convex portion 74b, it is not necessary to be an isosceles triangle. For example, the surface of the convex portion 74b on the side facing the light emitting element 73 is a light emitting element. The light from 73 is reflected in the vertical direction with respect to the upper surface 2b of the substrate 2, or the light reflected through the frame (reflecting member) 9 is further perpendicular to the upper surface 2b of the substrate 2. It may be formed as an inclined surface that is totally reflected at a desired angle such as to be reflected by the light source, and the other surface may be formed to be an inclined surface parallel to the light from the light emitting element 73. Moreover, such a convex part 74b may be formed in an annular shape so as to surround the light emitting element 73 in plan view.

  Further, as shown in FIG. 24C, the first layer 74 is provided so that the upper surface of the base 2 is exposed between the convex portion 74b and the adjacent convex portion 74b. 75 and the upper surface 2b of the base 2 are more preferably formed so as to be bonded to each other at the exposed portion. Thereby, the volume of each divided first layer 74 is reduced, and the thermal expansion and contraction of the first layer 74 due to the operating environment when operating the light emitting device and the heat from the light emitting element 3 are reduced. At the same time, the adhesive strength between the substrate 2 and the second layer 75 increases. As a result, peeling between the base 2 and the second layer 75 caused by thermal expansion or thermal contraction of the first layer 74 when the light emitting device is operated can be reduced, and the light emitting device can be operated normally over a long period of time. it can.

  Furthermore, the first layer 74 is more preferably formed so as to be disposed below the light emitting portion of the light emitting element 3 (the active layer of the light emitting element 3). When the first layer 74 is on the upper side of the light emitting unit, the light emitted below the light emitting unit is not reflected on the upper surface of the first layer 74. Therefore, it is more preferable that the first layer 74 is disposed below the light emitting portion. For example, the first layer 74 may be formed by filling and curing the uncured first layer 74 in a notch on the upper surface of the base 2 formed so as to surround the mounting portion 2a. Alternatively, it may be formed by applying and curing the uncured first layer 74 around the mounting portion 2a protruding in a convex shape from the upper surface of the substrate 2. Note that the lower surface of the first layer 74 may be formed in a concavo-convex shape by filling and curing the uncured first layer 74 in a plurality of notches provided on the upper surface of the substrate 2. Good.

  The first light transmissive material constituting the first layer 74 is selected from those whose refractive index of light is smaller than the refractive index of the second light transmissive material constituting the second layer 75, for example, Epoxy resin having a refractive index of 1.5 to 1.61, silicon resin having a refractive index of 1.4 to 1.52, fluorine-based resin having a refractive index of about 1.3, or sol having a refractive index of about 1.5 -It selects from translucent materials, such as gel glass, and is suitably selected by the refractive index difference with the 2nd layer 75. In particular, when the first light-transmitting material is made of a fluororesin and the second layer 75 is made of a silicon resin, the light generated by the light-emitting element at the interface between the first layer 74 and the second layer 75 is increased. It can be reflected efficiently. Further, when the first layer 74 is a bubble in which a gas is contained in the second layer 75, for example, since the refractive index of air is approximately 1, the difference in refractive index from the second layer 75 can be increased. It is suitable.

  For example, in the first layer 74 shown in FIG. 23, the uncured resin first layer 74 is applied below the light emitting portion of the light emitting element 73 on the upper surface 2b of the base 2 and cured by heating or the like. The first layer 74 containing gas in the form of bubbles may be applied to the upper surface 2b of the substrate 2 and cured. Then, an uncured second layer 75 is applied from above so as to cover the first layer 74 and the light emitting element 73, and is cured by heating or the like. The first layer 74 having a refractive index smaller than that of the second layer 75 is formed therebetween.

  Or the 1st layer 74 may be formed by adhere | attaching the 1st layer 74 formed in plate shape on the upper surface 2b of the base | substrate 2 with an adhesive agent. Thereafter, an uncured first layer 74 is applied to the upper surface 2 b of the base 2 so as to cover the first layer 74 and the light emitting element 73, or a second recess in which the light emitting element 73 is accommodated is formed. Layer 75 is adhered and fixed to the first layer 74, and the first layer 74 is formed.

  Furthermore, when the uneven surface 74 a is formed on the first layer 74, the plate-like first layer 74 on which the desired convex portion 74 b is formed by molding processing such as die molding or cutting molding is used as the base 2. Then, the uncured second layer 75 is applied and cured so as to cover the first layer 74 and the light emitting element 73, or the light emitting element 73 is accommodated. The second layer 75 in which the concave portion is formed is formed by adhering to the first layer 74 with a resin adhesive having a refractive index comparable to that of the second layer 75.

  Further, as shown in FIG. 25, the first layer 74 is a void portion or a cavity portion in which a part of the upper surface 2b of the substrate 2 and a part of the second layer 75 are bonded and the remaining portion is formed as a void or a cavity. There may be. In this case, heat from the outside in the operating environment of the light emitting device is hardly transmitted from the external substrate to the second layer 75 via the base 2 by the first layer 74. As a result, the light emitting device 17 can emit light from the light emitting element 73 through the second layer 75 with a desired light distribution, and is concentrated on the bonding interface between the base 2 and the second layer 75. The stress is reduced, and the second layer 75 is difficult to peel from the substrate 2.

  Further, the first layer 74 may be formed by the following method. That is, as shown in FIG. 26, an uneven surface 2d having an arithmetic average roughness Ra of 0.1 to 1 μm is formed on the upper surface 2b of the substrate 2, and the substrate 2 is heated above the thermosetting temperature of the first layer 74. Then, the uncured second layer 75 is applied to the upper surface 2b of the substrate 2 by a coating device such as a dispenser so as to cover the upper surface 2b of the substrate 2 and the light emitting element 73. As a result, a first layer 74 made of bubbles formed by the thermal expansion of the gas remaining on the uneven portion 2d of the upper surface 2b of the base 2 is formed.

  As shown in FIG. 27B, the second layer 75 is more preferably injected below the upper end portion of the inner peripheral surface 9 a of the frame body 9. As a result, the light emitted from the second layer 75 is reflected upward by the inner peripheral surface 9a extending further upward, and a light emitting device capable of emitting light with high directivity can be obtained. The light emission intensity of the device is improved.

  The second layer 75 is made of a transparent resin such as a silicone resin, an epoxy resin, or a urea resin, or a transparent glass such as a low-melting glass or a sol-gel glass. Note that the second layer 75 has a light-transmitting property and can transmit at least light from the light-emitting element 73.

  When the second layer 75 is disposed in close contact with the surface of the light emitting element 73, light can be efficiently extracted from the inside of the light emitting element 73 due to the refractive index difference between the light emitting element 73 and the second layer 75. It is possible to effectively suppress the occurrence of light reflection loss inside the light emitting element 73.

  FIG. 28A shows a diagram in which the second layer 75 contains therein wavelength conversion particles 6 a that convert the wavelength of light emitted from the light emitting element 73. Light having a desired wavelength spectrum wavelength-converted by the wavelength-converting particles 6a or light having a desired wavelength spectrum in which light from the light-emitting element 73 and light wavelength-converted by the wavelength-converting particles 6a are mixed Released. Furthermore, the light irregularly reflected by the first layer 74 with a low loss is uniformly applied to the wavelength conversion particles 6 a uniformly dispersed in the second layer 75. As a result, the number of wavelength conversion particles 6a irradiated with light from the light emitting element 73 is increased, the light radiant flux of the light emitting device is improved, and the wavelength conversion particles 6a are uniform by the light irregularly reflected by the first layer 74. By irradiating the light, color unevenness and color variation of light emitted from the light emitting device can be suppressed. Such a second layer 75 is obtained by forming the first layer 74 on the upper surface 2b of the substrate 2 and then removing the uncured first layer 74 containing the wavelength converting particles 6a with an injector such as a dispenser. The light-emitting element 73 is coated on the upper surface of the first layer 74 so as to be coated and thermally cured.

  The wavelength conversion member 6 has a small refractive index difference from the first layer 74 and has a high transmittance with respect to light from the ultraviolet light region to the visible light region, such as a transparent resin such as silicone resin, epoxy resin, urea resin, or the like. It consists of transparent glass etc., such as melting | fusing point glass and sol-gel glass, and contains the wavelength conversion particle | grains 6a.

  FIGS. 28B and 29A are diagrams in which the wavelength conversion member 6 that converts the wavelength of light emitted from the light emitting element 73 is disposed on the surface of the second layer 75. With such a configuration, the light irregularly reflected by the first layer 74 with low loss is diffused over a wider range while propagating through the second layer 75 and enters the wavelength conversion member 6. As a result, the light from the light emitting element 73 irradiated to each wavelength converting particle 6a contained in the wavelength converting member 6 increases, and the light radiant flux of the light emitting device increases. Further, the light irregularly reflected by the first layer 74 irradiates the entire wavelength conversion member 6 uniformly, so that the variation in the radiation intensity of the light incident on the wavelength conversion member 6 is reduced, and the light is emitted from the light emitting device. Light color variation and color unevenness are suppressed. Such a wavelength conversion member 6 is formed by applying an uncured liquid resin or liquid glass containing the wavelength conversion particles 6a with a syringe such as a dispenser so as to cover the second layer 75, and thermally curing the resin. Or the plate-like wavelength conversion member 6 containing the wavelength conversion particles 6 a is disposed so as to cover the second layer 75, thereby being disposed on the surface of the second layer 75. The

  And this wavelength conversion particle | grains 6a are used for at least one of the 2nd layer 75 and the wavelength conversion member 6, ie, the 2nd layer 75, the wavelength conversion member 6, or the 2nd layer 75 and the wavelength conversion member 6. What is necessary is just to make it contain in both.

  In the configuration shown in FIG. 29B, the wavelength conversion member 6 that converts the wavelength of light emitted from the light emitting element 73 is disposed apart from the surface of the second layer 75.

  The light emitting element 73 of the present embodiment emits light included in at least the ultraviolet region to the blue region. That is, as the wavelength conversion particles 6 a that convert the wavelength of light from the light emitting element 73, at least one of the second layer 75 and the wavelength conversion member 6 contains a phosphor that is excited by the light of the light emitting element 73 and generates fluorescence. In such a case, there is an option for a phosphor with good wavelength conversion efficiency that converts light of the light emitting element 73 with high energy at a short wavelength from the ultraviolet region to the blue region into fluorescence having a longer wavelength and lower energy than the light of the light emitting element 73. The light flux of the light emitting device can be increased.

  In addition, the light emitting element 73 is preferably an element that emits white light or various colors of light from a light emitting device with 200-500 nm ultraviolet light to near ultraviolet light or blue light from the standpoint of visibility. . For example, a buffer layer composed of gallium (Ga) -nitrogen (N), Al-Ga-N, indium (In) -GaN, etc. on a sapphire substrate, an N-type layer, a light emitting layer (active layer), a P-type layer A gallium nitride compound semiconductor, a silicon carbide (SiC) compound semiconductor, a zinc oxide compound semiconductor, a zinc selenide compound semiconductor, a diamond compound semiconductor, a boron nitride compound semiconductor, or the like is used.

  In addition, the light emitting element 73 has a metal bump using a brazing material such as Au—Sn, Sn—Ag, Sn—Ag—Cu, or Sn—Pb or solder, or a metal using a metal such as Au or Ag. It is electrically connected to the wiring pattern by flip-chip mounting through a conductive member 10 made of a conductive resin made of a resin such as a bump and an epoxy resin containing a metal powder such as Ag. For example, the conductive member 10 made of a solder material such as paste Au—Sn or Pb—Sn or Ag paste is placed on the wiring pattern by using a dispenser or the like, and the electrode of the light emitting element 73 and the conductive member 10. The light emitting element 73 is mounted so as to be in contact with each other, and then the whole is heated, whereby a light emitting device in which the electrode of the light emitting element 73 and the wiring pattern are electrically connected by the conductive member 10 is manufactured. In addition, the conductive member 10 made of a solder material such as paste Au—Sn or Pb—Sn is placed on the wiring pattern by using a dispenser or the like, and the whole is heated, and then the electrode of the light emitting element 73 The light emitting device 73 is mounted so that the conductive member 10 and the conductive member 10 are in contact with each other, and the electrode of the light emitting device 73 and the wiring pattern are electrically connected by the conductive member 10. And a method of making. Note that a method of electrically connecting the wiring pattern and the electrode of the light emitting element 73 with, for example, a conductive member 10 such as a bonding wire may be used, and only flip chip mounting can be used.

  The light emitting element 73 is mounted on the mounting portion 2 a and electrically connected to the wiring pattern via the conductive member 10, and then the light emitting element 73 is covered on the upper surface 2 b of the base 2 and the inside of the frame body 9. Thus, the second layer 75 is disposed, and the first layer 74 is disposed at the junction between the upper surface 2 b of the base 2 and the second layer 75.

(Eighth embodiment)
Next, the lighting device of the present invention will be described. The illuminating device of the present invention is a light emitting device group comprising a plurality of light emitting devices of the present invention, for example, in a lattice shape or a zigzag shape, by installing the above light emitting device as a light source in a predetermined arrangement. A predetermined arrangement such as a plurality of groups arranged radially, circularly, or concentrically in a polygonal shape is adopted. Thereby, intensity unevenness can be suppressed as compared with the conventional lighting device.

  In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and a light reflecting means 103 such as a reflecting plate, an optical lens, or a light diffusing plate optically designed in an arbitrary shape is installed around these light emitting devices. Thus, an illumination device that can emit light having an arbitrary light distribution can be obtained.

  For example, as shown in FIG. 30 and FIG. 31, a plurality of light emitting devices 101 are arranged in a plurality of rows in a driving unit 102 having electric wiring for driving a light emitting device such as a light emitting device driving circuit board, In the case of an illuminating device in which a light reflecting means 103 optically designed in an arbitrary shape is installed around the light emitting device 101, a plurality of light emitting devices 101 arranged on one adjacent row are connected to adjacent light emitting devices 101. It is preferable to arrange so that the interval is not the shortest, so-called staggered. That is, when the light emitting devices 101 are arranged in a grid pattern, the glare is strengthened by arranging the light emitting devices 101 as light sources on a straight line, and such a lighting device enters human vision. Thus, discomfort is likely to occur, but the staggered shape suppresses glare and reduces discomfort to the human eye. Furthermore, since the distance between the adjacent light emitting devices 101 is increased, thermal interference between the adjacent light emitting devices 101 is suppressed, and heat accumulation in the drive unit 102 in which the light emitting devices 101 are mounted is suppressed. Heat is efficiently dissipated outside the light emitting device 101. As a result, it is possible to manufacture a long-life lighting device that is less uncomfortable for human eyes and has stable optical characteristics over a long period of time.

  In addition, the lighting device includes a plurality of concentric groups of circular or polygonal light-emitting devices 101 each composed of a plurality of light-emitting devices 101 on the drive unit 102 as shown in the plan view and the cross-sectional view shown in FIGS. In the case of the formed lighting device, it is preferable that the number of light emitting devices 101 arranged in one circular or polygonal light emitting device 101 group is increased from the center side of the lighting device to the outer peripheral side. As a result, more light emitting devices 101 can be arranged while maintaining an appropriate interval between the light emitting devices 101, and the irradiance of light of the illumination device can be further improved. In addition, the density of the light emitting device 101 at the center of the lighting device can be reduced to suppress heat accumulation at the center of the drive unit 102. Therefore, the temperature distribution in the drive unit 102 is uniform, heat is efficiently transmitted to the external electric circuit board or the heat sink on which the lighting device is installed, and the temperature rise of the light emitting device 101 can be suppressed. As a result, the light-emitting device 101 can operate stably over a long period of time and a long-life lighting device can be manufactured.

  Examples of such lighting devices include general lighting fixtures, chandelier lighting fixtures, residential lighting fixtures, office lighting fixtures, store lighting, display lighting fixtures, and street lamp lighting fixtures that are used indoors and outdoors. , Guide light fixtures and signaling devices, stage and studio lighting fixtures, advertising lights, lighting poles, underwater lighting lights, strobe lights, spotlights, security lights embedded in power poles, emergency lighting fixtures, flashlights , Electronic bulletin boards and the like, backlights such as dimmers, automatic flashers, displays, moving picture devices, ornaments, illuminated switches, optical sensors, medical lights, in-vehicle lights, and the like.

  In the description of the above embodiment, the terms “upper, lower, left and right” are merely used to describe the positional relationship in the drawings, and do not mean the positional relationship in actual use.

1 is a perspective view of a light emitting device according to a first embodiment of the present invention. 1 is a cross-sectional view of a light emitting device according to a first embodiment of the present invention. It is sectional drawing which shows the structure of the light emitting element used for 1st Embodiment of this invention. It is a conceptual diagram which shows the optical function of the light-emitting device by 1st Embodiment of this invention. It is sectional drawing which shows the light-emitting device by 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the light emitting element used for 2nd Embodiment of this invention. It is a conceptual diagram which shows the optical path of the light-emitting device by 2nd Embodiment of this invention. It is sectional drawing which shows the light-emitting device by 3rd Embodiment of this invention. It is sectional drawing which shows the other example of the light-emitting device by 3rd Embodiment of this invention. It is a principal part expanded sectional view of the light-emitting device by 4th Embodiment of this invention. It is a principal part expanded sectional view which shows the other example of the light-emitting device by 4th Embodiment of this invention. It is a principal part expanded sectional view which shows the other example of the light-emitting device by 4th Embodiment of this invention. It is a principal part expanded sectional view which shows the other example of the light-emitting device by 4th Embodiment of this invention. (A) is sectional drawing which shows the light-emitting device by 5th Embodiment of this invention. (B) is a principal part expanded sectional view of (a). (A) is sectional drawing which shows the other example of the light-emitting device by 5th Embodiment of this invention. (B) is a principal part expanded sectional view of (a). It is sectional drawing which shows the other example of the light-emitting device by 5th Embodiment of this invention. It is sectional drawing which shows the other example of the light-emitting device by 5th Embodiment of this invention. It is sectional drawing which shows the other example of the light-emitting device by 5th Embodiment of this invention. It is sectional drawing which shows the other example of the light-emitting device by 5th Embodiment of this invention. It is sectional drawing which shows the light-emitting device by 6th Embodiment of this invention. (A) is sectional drawing which shows an example of the light-emitting device by 7th Embodiment of this invention. (B) And (c) is a figure which shows the optical function of the light-emitting device by 7th Embodiment. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. It is sectional drawing which shows the other example of 7th Embodiment of the light-emitting device of this invention. (A) (b) It is sectional drawing which shows the light-emitting device by 7th Embodiment of this invention. It is a top view which shows an example of embodiment of the illuminating device of this invention. It is sectional drawing of the illuminating device of FIG. It is a top view which shows the other example of embodiment of the illuminating device of this invention. It is sectional drawing of the illuminating device of FIG.

Explanation of symbols

1: Light-emitting device 2: Base body 3: Light-emitting element 34: Translucent electrode 3A: First surface 3B: Second surface 4: First layer 5: Second layer

Claims (20)

  1. A substrate;
    A light emitting device having a lower surface on which a translucent electrode is formed and mounted on the substrate;
    A first layer having a first refractive index smaller than the refractive index of the translucent electrode, and covering the translucent electrode of the light emitting element and provided on the substrate;
    A light-emitting device comprising: a light-transmitting second layer that has a second refractive index greater than the first refractive index and covers the light-emitting element and the first layer.
  2. The light emitting device according to claim 1, wherein the first layer is made of a translucent material.
  3. The light emitting device according to claim 2, wherein the first layer is made of a fluororesin, and the second layer is made of a silicon resin.
  4. The light emitting device according to claim 3, wherein a surface of the region of the substrate on which the first layer is provided is a rough surface.
  5. The light emitting device according to claim 3, wherein the light emitting element has a side surface in contact with the first layer.
  6. 6. The light emitting device according to claim 5, wherein the vicinity of the side surface of the light emitting element of the first layer is thicker than other portions of the first layer.
  7. The light emitting device according to claim 1, wherein the first layer is a void.
  8. The light-emitting element has a light-emitting layer that generates light, and the light generated by the light-emitting layer travels from the light-emitting layer into the translucent electrode and is emitted to the second layer. The light emitting device according to claim 1.
  9. The light emitting device according to claim 8, wherein the light traveling through the translucent electrode of the light emitting element travels in a light emitting direction by the first layer.
  10. The light emitting device according to claim 1, wherein the second layer covers an upper surface of the light emitting element.
  11. The light emitting device according to claim 1, wherein the second layer has a lower surface in contact with the first layer.
  12. The light emitting device according to claim 11, wherein the lower surface of the second layer is provided above the light emitting layer of the light emitting element.
  13. The light emitting device according to claim 12, wherein light emitted to the second layer travels in a light emitting direction by the first layer.
  14. The light-emitting device according to claim 1, wherein a film for diffusing light of the light-emitting element is provided on a surface of the region where the light-emitting element of the base is mounted.
  15. The light-emitting device according to claim 14, wherein the light-emitting element is a light-emitting diode that generates blue light, and the film is made of titanium oxide.
  16. The light-emitting device according to claim 14, wherein the light-emitting element is a light-emitting diode that generates ultraviolet light, and the film is made of zirconium oxide.
  17. A substrate;
    A light emitting device having a lower surface on which a translucent electrode is formed and mounted on the substrate;
    A light reflecting means for guiding the light traveling through the translucent electrode to the light emitting direction by total reflection;
    A light-transmitting layer that covers the light-emitting element and is formed of a light-transmitting material;
    A light emitting device comprising:
  18. A light source;
    First light reflecting means for guiding the light emitted from the light source in the light emitting direction by total reflection;
    A second light reflecting means for guiding the light guided by the first light reflecting means in a light emitting direction by total reflection;
    A light emitting device comprising:
  19.   19. The light emitting device according to claim 18, wherein the light source generates light having at least a part of wavelengths of 210 nm to 470 nm.
  20.   19. The light emitting device according to claim 18, further comprising wavelength conversion means for converting the wavelength of the light emitted from the second light reflecting means to emit.
JP2008508639A 2006-03-29 2007-03-29 Light emitting device Active JP5047162B2 (en)

Priority Applications (6)

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JP2006090191 2006-03-29
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JP2008508639A JP5047162B2 (en) 2006-03-29 2007-03-29 Light emitting device
PCT/JP2007/057000 WO2007114306A1 (en) 2006-03-29 2007-03-29 Light emitting device

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DE112007000773B4 (en) 2013-04-25
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WO2007114306A1 (en) 2007-10-11
DE112007000773T5 (en) 2009-01-15
CN101410994A (en) 2009-04-15

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