JPWO2007013284A1 - エポキシ樹脂組成物及び半導体装置 - Google Patents
エポキシ樹脂組成物及び半導体装置 Download PDFInfo
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- JPWO2007013284A1 JPWO2007013284A1 JP2007528398A JP2007528398A JPWO2007013284A1 JP WO2007013284 A1 JPWO2007013284 A1 JP WO2007013284A1 JP 2007528398 A JP2007528398 A JP 2007528398A JP 2007528398 A JP2007528398 A JP 2007528398A JP WO2007013284 A1 JPWO2007013284 A1 JP WO2007013284A1
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Abstract
Description
以上のような状況から、難燃性付与剤を使用することなく高い耐燃性を有し、かつ流動性を損なうことなく、鉛フリー半田にも対応可能な高い耐半田リフロー性を有する半導体封止用樹脂組成物の開発が望まれていた。
[1] (A)一般式(1)で示されるエポキシ樹脂、(B)一般式(2)で示されるフェノール樹脂、(C)ホスフィン化合物とキノン化合物との付加物を含む硬化促進剤、(D)芳香環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物、(E)シランカップリング剤、及び(F)無機充填材、を必須成分とし、前記(F)無機充填材を全エポキシ樹脂組成物中に84重量%以上、92重量%以下含むことを特徴とする半導体封止用エポキシ樹脂組成物、
(ただし、上記一般式(1)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。)
(ただし、上記一般式(2)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。)
[2] 前記(A)一般式(1)で示されるエポキシ樹脂の軟化点が35℃以上、60℃以下である第[1]項記載の半導体封止用エポキシ樹脂組成物、
[3] 前記(C)ホスフィン化合物とキノン化合物との付加物が、トリフェニルホスフィンの1,4−ベンゾキノン付加物である第[1]項又は第[2]項記載の半導体封止用エポキシ樹脂組成物、
[4] 前記(D)芳香環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物がベンゼン環又はナフタレン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物である第[1]項ないし第[3]項のいずれかに記載の半導体封止用エポキシ樹脂組成物、
[5] ベンゼン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した前記化合物が、カテコール、ピロガロール、没食子酸、没食子酸エステル、またはこれらの誘導体である、第[4]項に記載の半導体封止用エポキシ樹脂組成物、
[6] ナフタレン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した前記化合物が、1,2−ジヒドロキシナフタレンもしくは2,3−ジヒドロキシナフタレン、またはこれらの誘導体である、第[4]項に記載の半導体封止用エポキシ樹脂組成物、
[7] 第[1]項ないし第[6]項のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
である。
以下、各成分について詳細に説明する。
一般式(1)のRは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数、nは平均値で0又は10以下の正数であるが、これらの内では硬化性の点から式(3)の樹脂等が好ましい。nが上記範囲内であると、樹脂の粘度が増大することによる封止成形時における樹脂組成物の流動性の低下を抑えることができ、より一層の低吸湿化のための無機充填材の高充填化が可能となる。
(ただし、上記一般式(1)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。)
一般式(2)のRは水素または炭素数1〜4のアルキル基を示し、互いに同一であっても異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数、nは平均値で0又は10以下の正数であるが、これらの内では硬化性の点から式(4)の樹脂等が好ましい。nが上記範囲内であると、樹脂の粘度が増大することによる封止成形時における樹脂組成物の流動性の低下を抑えることができ、より一層の低吸湿化のための無機充填材の高充填化が可能となる。
(ただし、上記一般式(2)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。)
(上記一般式(6)において、R1、R7はどちらか一方が水酸基であり、片方が水酸基のとき他方は水素、水酸基又は水酸基以外の置換基。R2、R3、R4、R5、R6は水素、水酸基又は水酸基以外の置換基。)
本発明のエポキシ樹脂組成物を用いて、半導体素子等の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成形すればよい。
図1は、本発明に係るエポキシ樹脂組成物を用いた半導体装置の、断面構造を示した図である。ダイパッド2上に、ダイボンド材硬化物6を介して半導体素子1が固定されている。半導体素子1の電極パッドとリードフレーム4との間は金線3によって接続されている。半導体素子1は、封止材硬化物5によって封止されている。
(実施例)
実施例1
0.20重量部
2,3−ジヒドロキシナフタレン 0.05重量部
シランカップリング剤1:γ−グリシジルプロピルトリメトキシシラン
0.20重量部
溶融球状シリカ(平均粒径25μm) 88.00重量部
カルナバワックス 0.30重量部
カーボンブラック 0.40重量部
をミキサーを用いて混合した後、表面温度が95℃と25℃の2本ロールを用いて混練し、冷却後粉砕してエポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物の特性を以下の方法で評価した。結果を表1に示す。
スパイラルフロー:低圧トランスファー成形機を用いて、EMMI−1−66に準じたスパイラルフロー測定用の金型に、金型温度175℃、注入圧力9.8MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し、流動長を測定した。単位はcm。80cm以下であると金線流れやパッケージ未充填などの成形不良が生じる可能性がある。
表1、2、3の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得て、実施例1と同様にして評価した。結果を表1、2、3に示す。
表1〜3において、「チップ上剥離」とは、チップ1と封止材硬化物5との界面における剥離をいい、「パッド上剥離」とは、ダイパッド2の上面(チップ搭載面でチップ1周辺部)と封止材硬化物5との界面における剥離をいい、「パッド裏剥離」とは、ダイパッド2の下面(チップ搭載面の反対側)と封止材硬化物5との界面における剥離をいい、「インナーリード上剥離」とは、リードフレーム4のうち封止材で封止された部分と封止材硬化物5との界面における剥離をいう。
実施例1以外で用いた原材料を以下に示す。
(化13)
エポキシ樹脂3:ビフェニル型エポキシ樹脂(油化シェルエポキシ(株)製、YX−4000K、エポキシ当量185、融点105℃)
エポキシ樹脂4:ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン製、YL−6810、エポキシ当量170g/eq、融点47℃)
フェノール樹脂2:パラキシレン変性ノボラック型フェノール樹脂(三井化学(株)製、XLC−4L、水酸基当量168、軟化点62℃)
硬化促進剤2:トリフェニルホスフィン
1,2−ジヒドロキシナフタレン
カテコール
ピロガロール
1,6−ジヒドロキシナフタレン
レゾルシノール
シランカップリング剤2:Nフェニル−γ−アミノプロピルトリメトキシシラン
シランカップリング剤3:γ−グリシジルプロピルトリメトキシシラン
Claims (7)
- (A)一般式(1)で示されるエポキシ樹脂、(B)一般式(2)で示されるフェノール樹脂、(C)ホスフィン化合物とキノン化合物との付加物を含む硬化促進剤、(D)芳香環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物、(E)シランカップリング剤、及び(F)無機充填材、を必須成分とし、前記(F)無機充填材を全エポキシ樹脂組成物中に84重量%以上、92重量%以下含むことを特徴とする半導体封止用エポキシ樹脂組成物。
(化1)
(ただし、上記一般式(1)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。)
(化2)
(ただし、上記一般式(2)において、Rは水素または炭素数1〜4のアルキル基を示し、互いに同一もしくは異なっていても良い。aは0〜4の整数、bは0〜4の整数、cは0〜3の整数、dは0〜4の整数。nは平均値で、0又は10以下の正数。) - 前記(A)一般式(1)で示されるエポキシ樹脂の軟化点が35℃以上、60℃以下である請求項1記載の半導体封止用エポキシ樹脂組成物。
- 前記(C)ホスフィン化合物とキノン化合物との付加物が、トリフェニルホスフィンの1,4−ベンゾキノン付加物である請求項1又は2記載の半導体封止用エポキシ樹脂組成物。
- 前記(D)芳香環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物が、ベンゼン環又はナフタレン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した化合物である請求項1ないし3のいずれかに記載の半導体封止用エポキシ樹脂組成物。
- ベンゼン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した前記化合物が、カテコール、ピロガロール、没食子酸、没食子酸エステル、またはこれらの誘導体である、請求項4に記載の半導体封止用エポキシ樹脂組成物。
- ナフタレン環を構成する2個以上の隣接する炭素原子にそれぞれ水酸基が結合した前記化合物が、1,2−ジヒドロキシナフタレンもしくは2,3−ジヒドロキシナフタレン、またはこれらの誘導体である、請求項4に記載の半導体封止用エポキシ樹脂組成物。
- 請求項1ないし6のいずれかに記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置。
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JP5186965B2 (ja) * | 2008-03-19 | 2013-04-24 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP2009249597A (ja) * | 2008-04-10 | 2009-10-29 | Hitachi Chem Co Ltd | 封止用エポキシ樹脂組成物及び電子部品装置 |
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JP2015067615A (ja) * | 2013-09-26 | 2015-04-13 | 日本化薬株式会社 | エポキシ樹脂混合物、硬化性樹脂組成物、およびその硬化物 |
TWI723211B (zh) * | 2016-09-23 | 2021-04-01 | 日商住友電木股份有限公司 | 熱硬化性樹脂組成物、樹脂密封基板及電子裝置 |
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JP2019099726A (ja) * | 2017-12-06 | 2019-06-24 | 住友ベークライト株式会社 | エポキシ樹脂および電子装置 |
JP2019196462A (ja) * | 2018-05-11 | 2019-11-14 | 住友ベークライト株式会社 | 封止用エポキシ樹脂組成物の構成成分として用いられる粒子の製造方法、封止用エポキシ樹脂組成物の構成成分として用いられるコアシェル粒子、および、封止用エポキシ樹脂組成物 |
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JPH0597967A (ja) | 1991-10-09 | 1993-04-20 | Mitsui Toatsu Chem Inc | エポキシ樹脂組成物 |
JP3428699B2 (ja) * | 1993-09-24 | 2003-07-22 | ジャパンエポキシレジン株式会社 | エポキシ樹脂組成物 |
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JP2003212958A (ja) | 2002-01-18 | 2003-07-30 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
JP2004035781A (ja) | 2002-07-04 | 2004-02-05 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
US7023098B2 (en) * | 2003-03-11 | 2006-04-04 | Sumitomo Bakelite Company | Resin composition for encapsulating semiconductor chip and semiconductor device therewith |
JP2004331677A (ja) * | 2003-04-30 | 2004-11-25 | Hitachi Chem Co Ltd | 封止用エポキシ樹脂組成物及び電子部品装置 |
JP4561227B2 (ja) * | 2004-08-10 | 2010-10-13 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物及び半導体装置 |
JP2006111672A (ja) * | 2004-10-13 | 2006-04-27 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物および半導体装置 |
WO2006049156A1 (ja) * | 2004-11-02 | 2006-05-11 | Sumitomo Bakelite Company, Ltd. | エポキシ樹脂組成物及び半導体装置 |
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TWI388620B (zh) | 2013-03-11 |
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