JPWO2006046554A1 - セラミック多層基板及びその製造方法 - Google Patents
セラミック多層基板及びその製造方法 Download PDFInfo
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- JPWO2006046554A1 JPWO2006046554A1 JP2006517875A JP2006517875A JPWO2006046554A1 JP WO2006046554 A1 JPWO2006046554 A1 JP WO2006046554A1 JP 2006517875 A JP2006517875 A JP 2006517875A JP 2006517875 A JP2006517875 A JP 2006517875A JP WO2006046554 A1 JPWO2006046554 A1 JP WO2006046554A1
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- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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Abstract
Description
即ち、セラミック多層基板のセラミック層とチップ型セラミック電子部品との熱膨張係数が大きく異なる場合にチップ型セラミック電子部品にクラックが発生したり、破損したりすることが判った。無収縮工法を採用することによって基板の面方向の収縮を抑制すれば、収縮しないチップ型セラミック電子部品を内蔵させることができる。ところが、積層セラミックコンデンサ等のチップ型セラミック電子部品は高誘電率材料によって構成されていることが多く、高誘電率材料は一般に熱膨張係数が大きい。これに対して、セラミック層となるセラミックグリーン層の材料は、低誘電率材料によって構成されることが多く、低誘電率材料は一般に熱膨張係数が小さい。
11 セラミック積層体
11A セラミック層
12 導体パターン
13、113 チップ型セラミック電子部品
13A 外部端子電極(端子電極)
15 粉末層(未焼結粉末)
16、16A 拘束層(収縮抑制層)
111 セラミックグリーン積層体
111A セラミックグリーンシート(セラミックグリーン層)
115 ペースト層(密着防止材)
V 空隙
本実施形態のセラミック多層基板10は、図1の(a)に示すように、複数のセラミック層11Aが積層され且つ内部導体パターン12が形成されたセラミック積層体11と、上下のセラミック層11Aの界面に複数配置され、セラミック焼結体を素体とし且つその両端部に外部端子電極13Aを有するチップ型セラミック電子部品13と、を備えて構成されている。また、セラミック積層体11の両主面(上下両面)にはそれぞれ表面電極14、14が形成されている。
本実施形態では無収縮工法を用いてセラミック多層基板10を作製する場合について説明する。無収縮工法とは、セラミック積層体11としてセラミック材料を用いた場合にセラミック積層体の焼成前後でセラミック積層体の平面方向の寸法が実質的に変化しない工法のことを云う。
本実施形態においても、第1の実施形態と同一または相当部分には同一符号を附して説明する。
第1、第2の実施形態では密着防止材として樹脂を用いてチップ型セラミック電子部品13のセラミック素体部13Bとセラミック層11Aとの間に空隙Vを形成する場合について説明したが、本実施形態では密着防止材として難焼結性粉末を用いる。難焼結性粉末としては、前述した拘束層と同様に、セラミック層11Aの焼結温度では焼結しない粉末材料であれば特に制限されず、例えばAl2O3等のように焼結温度がセラミック層11Aの焼結温度より高いセラミック粉末が好ましい。本実施形態においても、第1、第2の実施形態と同一または相当部分には同一符号を附して説明する。
本実施形態のセラミック多層基板10Cは、図8に示すようにセラミック積層体11内の内部導体パターン12のチップ型セラミック電子部品13に対する接続部12Cの形態を異にする以外は第3の実施形態と実質的に同様に構成されている。即ち、本実施形態では、同図に示すようにチップ型セラミック電子部品13のセラミック素体部13Bとセラミック層11Aの間に難焼結性粉末からなる粉末層15が形成されている。内部導体パターン12のチップ型セラミック電子部品13との接続部12Cは、同図に示すように第1、第2接続導体12D、12Eによって形成され、実質的に第2の実施形態の接続構造と同様に構成されている。従って、本実施形態においても図7に示す第3の実施形態のセラミック多層基板10Bと同様の作用効果を期することができる。
本実施形態のセラミック多層基板10Dは、図9に示すようにセラミック層11Aの間に拘束層16Aが適宜介在している以外は、図7に示す第3の実施形態のセラミック多層基板10Bと同様に構成されている。従って、以下では、第3の実施形態と同一または相当部分には同一符号を附して本実施形態を説明する。
本実施例ではチップ型セラミック電子部品に熱分解性の樹脂からなるペースト層を形成し、無収縮工法で焼成してセラミック多層基板を作製し、チップ型セラミック電子部品(積層セラミックコンデンサ)のクラックの有無をもって、焼成後の降温時に積層セラミックコンデンサに無理な引っ張り力が作用しているか否かを調べた。また、内蔵された積層セラミックコンデンサの容量を測定し、容量変動を介して材料成分の相互拡散の程度を調べた。
セラミック多層基板を作製するには、まず、Al2O3をフィラーとし、セラミック材料としてホウ珪酸ガラスを焼結助材とする低温焼結セラミック材料を用いてスラリーを調製し、このスラリーをキャリアフィルム上に塗布して複数枚のセラミックグリーンシートを作製した。そして、一枚のセラミックグリーンシートに対してレーザー加工によりビアホールをそれぞれ形成した後、セラミックグリーンシートを平滑な支持台の上に密着させた状態で、Ag粉末を主成分とする導電性ペーストを、メタルマスクを用いてビアホール内に押し込むことによってビア導体部を形成した。このセラミックグリーンシートに同一の導電性ペーストをスクリーン印刷して所定のパターンで面内導体部を形成した。他のセラミックグリーシートについても同様にしてビア導体部及び面内導体部を適宜形成した。この低温焼結セラミック材料からなるセラミック層の熱膨張係数は7ppm/℃である。
X線探傷法を用いて、実施例1と比較例1の各セラミック多層基板内の4000個の積層セラミックコンデンサについてクラックの有無を調べ、その結果を表1に示した。また、LCRメータを用いて、実施例1と比較例1の各セラミック多層基板内の4000個の積層セラミックコンデンサについて1MHzの条件でそれぞれの容量を測定し、その結果を表2に示した。尚、表1、表2において、部品は積層セラミックコンデンサを意味し、基板はセラミック多層基板を意味する。
〔セラミック多層基板の作製〕
本実施例では、セラミックセラミック多層基板の上面から100μmの深さに位置するように積層セラミックコンデンサを配置し、積層セラミックコンデンサに塗布する密着防止材として実施例1の熱分解性の樹脂ペーストに代えて難焼結性材料(Al2O3)を含むペーストを塗布した以外は実施例1と同一要領でセラミック多層基板を作製した。
実施例2及び参考例1の各セラミック多層基板について実施例1と同様にX線探傷法を用いて積層セラミックコンデンサにクラックが発生しているか否かを観察し、その結果を表3に示した。また、これらの各セラミック多層基板についてLCRメータを用いて実施例1と同様にそれぞれの容量を測定し、その結果を表4に示した。更に、セラミック多層基板の表面に表面実装部品を実装し、それぞれのセラミック多層基板にクラックが発生しているか否かを観察した。
〔セラミック多層基板の作製〕
本実施例では、低温焼結セラミック材料に用いられる焼結助材の添加量を変化させて拘束層に添加することによって、セラミックグリーンシートの積層体に対する拘束層の密着力を変化させ、表5に示すように積層体の平面方向の収縮量を制御した以外は、実施例1と同一要領でセラミック多層基板を作製した。
本実施例においても実施例1と同様にX線探傷法で評価を行い、その結果を表5に示した。
〔セラミック多層基板の作製〕
本実施例では、実施例1と同一の基板材料を用いると共にチップ型セラミック電子部品の配置も実施例1と同様にした。本実施例では、密着防止材として、実施例2と同様の難焼結粉末を含む粉末ペーストをチップ型セラミック電子部品に塗布した。そして、セラミック積層体の内部導体パターン及びチップ型セラミック電子部品の外部端子電極としてCuを用い、また、チップ型セラミック電子部品として、大きさ1.6mm×0.8mm×0.3mm、内部電極Ni、焼成温度1200℃、容量規格0.1μF、熱膨張係数10.5ppm/℃の積層セラミックコンデンサを用いた。そして、焼成温度を表6に示すように変えてセラミック多層基板を作製し、粉末ペースト層に対する焼成温度の影響を調べた。
本実施例においても実施例1と同様にX線探傷法で評価を行い、その結果を表6に示した。
また、本発明の請求項3に記載のセラミック多層基板の製造方法は、請求項1に記載の発明において、上記密着防止材を上記セラミックグリーンシート側に付与する工程を備えたこと特徴とするものである。
Claims (9)
- 複数のセラミックグリーン層を積層してなるセラミックグリーン積層体と、このセラミックグリーン積層体の内部に配置され、セラミック焼結体を素体とし且つ端子電極を有するチップ型セラミック電子部品とを、同時に焼成することによって、チップ型セラミック電子部品を内蔵するセラミック多層基板を製造する方法であって、
上記チップ型セラミック電子部品と上記セラミックグリーン積層体との間に予め密着防止材を介在させ、
上記セラミックグリーン積層体、上記チップ型セラミック電子部品及び上記密着防止材を焼成することを特徴とするセラミック多層基板の製造方法。 - 上記密着防止材を上記セラミック焼結体の表面に付与する工程を備えたこと特徴とする請求項1に記載のセラミック多層基板の製造方法。
- 上記密着防止材として、上記セラミックグリーン層の焼結温度以下で燃焼または分解する樹脂を用いること特徴とする請求項1または請求項2に記載のセラミック多層基板の製造方法。
- 上記密着防止材として、上記セラミックグリーン層の焼結温度では実質的に焼結しないセラミック粉末を用いること特徴とする請求項1または請求項2に記載のセラミック多層基板の製造方法。
- 上記セラミックグリーン層を低温焼結セラミック材料によって形成し、上記セラミックグリーン積層体の内部に銀または銅を主成分とする導体パターンを形成すること特徴とする請求項1〜請求項4のいずれか1項に記載のセラミック多層基板の製造方法。
- 上記セラミックグリーン積層体の一方の主面または両主面に、上記セラミックグリーン層の焼結温度では実質的に焼結しない難焼結性粉末からなる収縮抑制層を付与する工程を備えたこと特徴とする請求項1〜請求項5のいずれか1項に記載のセラミック多層基板の製造方法。
- 複数のセラミック層が積層され且つ導体パターンを有するセラミック積層体と、上下のセラミック層の界面に設けられ、セラミック焼結体を素体とし且つ端子電極を有するチップ型セラミック電子部品と、を備えたセラミック多層基板であって、
上記セラミック積層体と上記チップ型セラミック電子部品の上記素体との界面に空隙が介在することを特徴とするセラミック多層基板。 - 複数のセラミック層が積層され且つ導体パターンを有するセラミック積層体と、上下のセラミック層の界面に設けられ、セラミック焼結体を素体とし且つ端子電極を有するチップ型セラミック電子部品と、を備えたセラミック多層基板であって、
上記セラミック積層体と上記チップ型セラミック電子部品の上記素体との界面に未焼結セラミック粉末が介在することを特徴とするセラミック多層基板。 - 上記セラミック層は、低温焼結セラミック層であることを特徴とする請求項7または請求項8に記載のセラミック多層基板。
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8148251B2 (en) * | 2004-01-30 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Forming a semiconductor device |
CN101049058B (zh) * | 2004-10-29 | 2012-10-10 | 株式会社村田制作所 | 陶瓷多层基板及其制造方法 |
KR100790694B1 (ko) * | 2006-06-30 | 2008-01-02 | 삼성전기주식회사 | 캐패시터 내장형 ltcc 기판 제조방법 |
KR100896609B1 (ko) * | 2007-10-31 | 2009-05-08 | 삼성전기주식회사 | 다층 세라믹 기판의 제조 방법 |
CN101933409B (zh) * | 2008-01-31 | 2013-03-27 | 株式会社村田制作所 | 陶瓷多层基板的制造方法及陶瓷多层基板 |
EP2131637B1 (en) * | 2008-03-28 | 2012-10-31 | Murata Manufacturing Co. Ltd. | Method for producing multilayer ceramic substrate and composite sheet |
JP5176740B2 (ja) * | 2008-07-17 | 2013-04-03 | 株式会社村田製作所 | 多層セラミック基板 |
KR101043468B1 (ko) * | 2009-05-06 | 2011-06-23 | 삼성전기주식회사 | 프로브 기판 및 이를 구비하는 프로브 카드 |
KR101580464B1 (ko) * | 2009-06-19 | 2015-12-29 | 주식회사 미코 | 다층 세라믹 기판의 제조 방법 |
JP5163714B2 (ja) | 2010-08-25 | 2013-03-13 | 株式会社村田製作所 | 電子部品 |
CN103782665B (zh) * | 2011-08-15 | 2017-04-26 | 艾思玛太阳能技术股份公司 | 在电路板的支持物中包括电容器的电子设备及其生产方法 |
JP5928847B2 (ja) * | 2011-12-27 | 2016-06-01 | 株式会社村田製作所 | 多層セラミック基板およびそれを用いた電子部品 |
KR20140081283A (ko) * | 2012-12-21 | 2014-07-01 | 삼성전기주식회사 | 기판 내장용 적층 세라믹 전자부품 및 이의 제조방법, 기판 내장용 적층 세라믹 전자부품을 구비하는 인쇄회로기판 |
JP5583828B1 (ja) * | 2013-08-05 | 2014-09-03 | 株式会社フジクラ | 電子部品内蔵多層配線基板及びその製造方法 |
JP6256306B2 (ja) * | 2014-11-05 | 2018-01-10 | 株式会社村田製作所 | 電子部品内蔵基板およびその製造方法 |
US10763031B2 (en) | 2016-08-30 | 2020-09-01 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing an inductor |
CN110323061B (zh) * | 2019-07-10 | 2024-05-31 | 南方科技大学 | 具有多种烧制模式的三维模组 |
JP7294530B2 (ja) * | 2020-04-07 | 2023-06-20 | 株式会社村田製作所 | 多層基板およびその製造方法 |
DE102020133481B4 (de) | 2020-12-15 | 2024-08-08 | Carl Freudenberg Kg | Reinigungsgerät und Verfahren zur Ansteuerung eines Reinigungsgeräts |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0632378B2 (ja) | 1985-06-14 | 1994-04-27 | 株式会社村田製作所 | 電子部品内蔵多層セラミック基板 |
GB2197540B (en) * | 1986-11-12 | 1991-04-17 | Murata Manufacturing Co | A circuit structure. |
US5384434A (en) * | 1992-03-02 | 1995-01-24 | Murata Manufacturing Co., Ltd. | Multilayer ceramic circuit board |
JP2817553B2 (ja) * | 1992-10-30 | 1998-10-30 | 日本電気株式会社 | 半導体パッケージ構造及びその製造方法 |
US5661882A (en) * | 1995-06-30 | 1997-09-02 | Ferro Corporation | Method of integrating electronic components into electronic circuit structures made using LTCC tape |
DE19609221C1 (de) * | 1996-03-09 | 1997-08-07 | Bosch Gmbh Robert | Verfahren zur Herstellung von keramischen Mehrschichtsubstraten |
US5948200A (en) * | 1996-07-26 | 1999-09-07 | Taiyo Yuden Co., Ltd. | Method of manufacturing laminated ceramic electronic parts |
US6241838B1 (en) * | 1997-09-08 | 2001-06-05 | Murata Manufacturing Co., Ltd. | Method of producing a multi-layer ceramic substrate |
JP3322199B2 (ja) * | 1998-01-06 | 2002-09-09 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JPH11220261A (ja) | 1998-02-02 | 1999-08-10 | Sumitomo Metal Electronics Devices Inc | コンデンサ内蔵セラミック多層基板 |
JP3687484B2 (ja) * | 1999-06-16 | 2005-08-24 | 株式会社村田製作所 | セラミック基板の製造方法および未焼成セラミック基板 |
US6252761B1 (en) * | 1999-09-15 | 2001-06-26 | National Semiconductor Corporation | Embedded multi-layer ceramic capacitor in a low-temperature con-fired ceramic (LTCC) substrate |
JP2001111234A (ja) | 1999-10-07 | 2001-04-20 | Murata Mfg Co Ltd | 多層セラミック基板およびその製造方法 |
JP2001156454A (ja) | 1999-11-25 | 2001-06-08 | Murata Mfg Co Ltd | 多層セラミック基板およびその製造方法 |
JP3593964B2 (ja) | 2000-09-07 | 2004-11-24 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JP4248157B2 (ja) * | 2000-12-15 | 2009-04-02 | イビデン株式会社 | 多層プリント配線板 |
JP2003332741A (ja) * | 2002-05-14 | 2003-11-21 | Murata Mfg Co Ltd | セラミック多層基板の製造方法 |
JP2004247334A (ja) * | 2003-02-10 | 2004-09-02 | Murata Mfg Co Ltd | 積層型セラミック電子部品およびその製造方法ならびにセラミックグリーンシート積層構造物 |
CN101049058B (zh) * | 2004-10-29 | 2012-10-10 | 株式会社村田制作所 | 陶瓷多层基板及其制造方法 |
ATE478545T1 (de) * | 2004-10-29 | 2010-09-15 | Murata Manufacturing Co | Mehrschichtiges substrat mit elektronischer komponente des chiptyps und herstellungsverfahren dafür |
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2005
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2007
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Also Published As
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EP1806958A1 (en) | 2007-07-11 |
KR100890371B1 (ko) | 2009-03-25 |
US7655103B2 (en) | 2010-02-02 |
US20100092742A1 (en) | 2010-04-15 |
CN101049058A (zh) | 2007-10-03 |
US20070184251A1 (en) | 2007-08-09 |
WO2006046554A1 (ja) | 2006-05-04 |
CN101049058B (zh) | 2012-10-10 |
JP4310468B2 (ja) | 2009-08-12 |
KR20070042572A (ko) | 2007-04-23 |
US8124883B2 (en) | 2012-02-28 |
EP1806958A4 (en) | 2008-12-31 |
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