JPS6471172A - Complete contact type image sensor - Google Patents
Complete contact type image sensorInfo
- Publication number
- JPS6471172A JPS6471172A JP62226412A JP22641287A JPS6471172A JP S6471172 A JPS6471172 A JP S6471172A JP 62226412 A JP62226412 A JP 62226412A JP 22641287 A JP22641287 A JP 22641287A JP S6471172 A JPS6471172 A JP S6471172A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoelectric conversion
- layer
- si3n4
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010408 film Substances 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 238000006243 chemical reaction Methods 0.000 abstract 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000009545 invasion Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To assure a complete contact type image sensor improved in deterioration and wear resistances and made difficult to produce any defect and electrically erroneous operation by forming a surface protective film of a photoelectric conversion device. CONSTITUTION:A series of photoelectric conversion elements are formed on a glass substrate 11, each of which elements is comprised of a semiconductor thin film held in a sandwiching relation between upper and lower electrodes 14, 12. So as to cover the whole surface of the resulting substrate, silicon dioxide SiO2 15 as a first layer, silicon nitride Si3N4 16 as a second layer, and silicon carbide SiC 17 as a third layer are deposited on the resulting substrate in succession in this order. Hereby, the SiO2 film 15 improves adhesive property between the upper electrode 14 and the Si3N4 film 16. The intermediate Si3N4 16 prevents the photoelectric conversion elements from being deteriorated owing to invasion of water or oxygen thereinto. The uppermost SiC film 17 prevents the protective film from wearing owing to the friction with a document.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62226412A JPS6471172A (en) | 1987-09-11 | 1987-09-11 | Complete contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62226412A JPS6471172A (en) | 1987-09-11 | 1987-09-11 | Complete contact type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6471172A true JPS6471172A (en) | 1989-03-16 |
Family
ID=16844714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62226412A Pending JPS6471172A (en) | 1987-09-11 | 1987-09-11 | Complete contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6471172A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000003345A1 (en) * | 1998-07-09 | 2000-01-20 | Infineon Technologies Ag | Semiconductor component having a passivation |
| JP2015215624A (en) * | 2009-10-28 | 2015-12-03 | アレンティック マイクロサイエンス インコーポレイテッド | Microscopy imaging method |
| US9989750B2 (en) | 2013-06-26 | 2018-06-05 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
| US10502666B2 (en) | 2013-02-06 | 2019-12-10 | Alentic Microscience Inc. | Sample processing improvements for quantitative microscopy |
| US10620234B2 (en) | 2009-10-28 | 2020-04-14 | Alentic Microscience Inc. | Microscopy imaging |
| US12022236B2 (en) | 2009-10-28 | 2024-06-25 | Alentic Microscience Inc. | Detecting and using light representative of a sample |
-
1987
- 1987-09-11 JP JP62226412A patent/JPS6471172A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000003345A1 (en) * | 1998-07-09 | 2000-01-20 | Infineon Technologies Ag | Semiconductor component having a passivation |
| US10620234B2 (en) | 2009-10-28 | 2020-04-14 | Alentic Microscience Inc. | Microscopy imaging |
| US11294160B2 (en) | 2009-10-28 | 2022-04-05 | Alentic Microscience Inc. | Microscopy imaging |
| JP2020129141A (en) * | 2009-10-28 | 2020-08-27 | アレンティック マイクロサイエンス インコーポレイテッド | Method for microscopic imaging |
| US11947096B2 (en) | 2009-10-28 | 2024-04-02 | Alentic Microscience Inc. | Microscopy imaging |
| US10114203B2 (en) | 2009-10-28 | 2018-10-30 | Alentic Microscience Inc. | Microscopy imaging |
| US10345564B2 (en) | 2009-10-28 | 2019-07-09 | Alentic Microscience Inc. | Microscopy imaging |
| US11635447B2 (en) | 2009-10-28 | 2023-04-25 | Alentic Microscience Inc. | Microscopy imaging |
| US9720217B2 (en) | 2009-10-28 | 2017-08-01 | Alentic Microscience Inc. | Microscopy imaging |
| US10900999B2 (en) | 2009-10-28 | 2021-01-26 | Alentic Microscience Inc. | Microscopy imaging |
| JP2015215624A (en) * | 2009-10-28 | 2015-12-03 | アレンティック マイクロサイエンス インコーポレイテッド | Microscopy imaging method |
| US12022236B2 (en) | 2009-10-28 | 2024-06-25 | Alentic Microscience Inc. | Detecting and using light representative of a sample |
| JP2018028683A (en) * | 2009-10-28 | 2018-02-22 | アレンティック マイクロサイエンス インコーポレイテッド | Method for microscopic imaging |
| US10520711B2 (en) | 2009-10-28 | 2019-12-31 | Alentic Microscience Inc. | Microscopy imaging |
| US10866395B2 (en) | 2009-10-28 | 2020-12-15 | Alentic Microscience Inc. | Microscopy imaging |
| US10768078B2 (en) | 2013-02-06 | 2020-09-08 | Alentic Microscience Inc. | Sample processing improvements for quantitative microscopy |
| US10502666B2 (en) | 2013-02-06 | 2019-12-10 | Alentic Microscience Inc. | Sample processing improvements for quantitative microscopy |
| US11598699B2 (en) | 2013-02-06 | 2023-03-07 | Alentic Microscience Inc. | Sample processing improvements for quantitative microscopy |
| US10809512B2 (en) | 2013-06-26 | 2020-10-20 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
| US10459213B2 (en) | 2013-06-26 | 2019-10-29 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
| US11874452B2 (en) | 2013-06-26 | 2024-01-16 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
| US9989750B2 (en) | 2013-06-26 | 2018-06-05 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
| US10746979B2 (en) | 2013-06-26 | 2020-08-18 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
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