JPS6467942A - Formation of resistance circuit of semiconductor device - Google Patents
Formation of resistance circuit of semiconductor deviceInfo
- Publication number
- JPS6467942A JPS6467942A JP22601287A JP22601287A JPS6467942A JP S6467942 A JPS6467942 A JP S6467942A JP 22601287 A JP22601287 A JP 22601287A JP 22601287 A JP22601287 A JP 22601287A JP S6467942 A JPS6467942 A JP S6467942A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wirings
- resistance
- low resistance
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To eliminate the use of aluminum wirings and to employs a silicide low resistance film as wirings by forming a polycrystalline or amorphous silicon high resistance film on the whole surface of a resistance circuit forming region on a silicon semiconductor substrate, and then selectively converting the high resistance film into a silicide low resistance film. CONSTITUTION:An SiO2 film 102 is formed on a silicon substrate 101, and an undoped polycrystalline silicon film 103 is then deposited thereon. A titanium silicide film 104 is deposited, patterned in a shape containing a resistor and wirings in the 2-layer film by a normal method as a resistor forming region. Further, a resist 105 is so formed by a lithography method that the resist remains only on a section to become low resistance wirings, and the film 104 is etched by dry or wet etching to form a resistance circuit pattern. It is annealed at a temperature of at least 800 deg.C to reduce the resistance of a remaining titanium silicide film 106, thereby obtaining low resistance wirings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22601287A JPS6467942A (en) | 1987-09-08 | 1987-09-08 | Formation of resistance circuit of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22601287A JPS6467942A (en) | 1987-09-08 | 1987-09-08 | Formation of resistance circuit of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467942A true JPS6467942A (en) | 1989-03-14 |
Family
ID=16838405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22601287A Pending JPS6467942A (en) | 1987-09-08 | 1987-09-08 | Formation of resistance circuit of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467942A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319273A (en) * | 1989-06-15 | 1991-01-28 | Nec Corp | Semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818955A (en) * | 1981-07-27 | 1983-02-03 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS59112641A (en) * | 1982-12-20 | 1984-06-29 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS6143464A (en) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | Semiconductor device |
-
1987
- 1987-09-08 JP JP22601287A patent/JPS6467942A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818955A (en) * | 1981-07-27 | 1983-02-03 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS59112641A (en) * | 1982-12-20 | 1984-06-29 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS6143464A (en) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319273A (en) * | 1989-06-15 | 1991-01-28 | Nec Corp | Semiconductor device |
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