JPS6450520A - Liquid growth method - Google Patents
Liquid growth methodInfo
- Publication number
- JPS6450520A JPS6450520A JP20846287A JP20846287A JPS6450520A JP S6450520 A JPS6450520 A JP S6450520A JP 20846287 A JP20846287 A JP 20846287A JP 20846287 A JP20846287 A JP 20846287A JP S6450520 A JPS6450520 A JP S6450520A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- particles
- contained
- melts
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain a budge melt in which oxidation of aluminum in the melt is eliminated even if time is elapsed and the composition ratio of the aluminum in GaAlAs is not varied, by making aluminum particles as single substance without dissolving in the melt by containing the particles in the low temperature melt. CONSTITUTION:In the step of manufacturing a melt to be conducted in the step of liquid growing GaAlAs on a semiconductor substrate, GaAs of saturating amount is contained in solvent to be dissolved in high temperature to produce melt 5, and the melt 5 is then divided into a plurality of crucibles 3. Then, the melt 5 is cooled to the state immediately before it is solidified, predetermined amounts of aluminum particles 9 are contained in the respective melts 5, the melts 5 are further cooled and solidified. For example, when the melts are contained in all the crucibles 3, they are immediately quickly cooled, and when the melts become approx. 35 deg.C, a vessel 7 containing the particles 9 of the weight corresponding to the composition ratio (x) of Ga1xAlxAs is moved on the crucible 3, and the hole of the vessel 7 is brought into coincidence with the crucible 3. Then, an intermediate cover 8 is moved, the particles 9 are contained in the crucible 3, and the melt is further quickly cooled and solidified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20846287A JPS6450520A (en) | 1987-08-21 | 1987-08-21 | Liquid growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20846287A JPS6450520A (en) | 1987-08-21 | 1987-08-21 | Liquid growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450520A true JPS6450520A (en) | 1989-02-27 |
Family
ID=16556586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20846287A Pending JPS6450520A (en) | 1987-08-21 | 1987-08-21 | Liquid growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450520A (en) |
-
1987
- 1987-08-21 JP JP20846287A patent/JPS6450520A/en active Pending
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