JPS6441277A - Electrode forming method for solar cell - Google Patents

Electrode forming method for solar cell

Info

Publication number
JPS6441277A
JPS6441277A JP62198807A JP19880787A JPS6441277A JP S6441277 A JPS6441277 A JP S6441277A JP 62198807 A JP62198807 A JP 62198807A JP 19880787 A JP19880787 A JP 19880787A JP S6441277 A JPS6441277 A JP S6441277A
Authority
JP
Japan
Prior art keywords
reflection film
paste
baked
solar cell
penetrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198807A
Other languages
Japanese (ja)
Inventor
Noriaki Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62198807A priority Critical patent/JPS6441277A/en
Publication of JPS6441277A publication Critical patent/JPS6441277A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To facilitate the forming of a point contact type electrode to a solar cell, by obtaining a point type contact for penetration control of an anti- reflection film based on temperature difference, by adjusting a heating area. CONSTITUTION:After an anti-reflection film 4 is formed on a semiconductor substrate 1, Ag paste 21 is printed as a comb-teeth type electrode. A part of the printed pattern is heated and baked in the form of points, and made to penetrate the anti-reflection film to come into ohmic contact with the substrate 1. The whole part of the printed pattern is heated and completed as a baked electrode 2. The baking temperature is set at a value less than or equal to the penetrating temperature of Ag paste into the anti-reflection film 4. Therefore, the parts of Ag paste which penetrate the anti-reflection film 14 becomes point type baked parts 22.
JP62198807A 1987-08-06 1987-08-06 Electrode forming method for solar cell Pending JPS6441277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198807A JPS6441277A (en) 1987-08-06 1987-08-06 Electrode forming method for solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198807A JPS6441277A (en) 1987-08-06 1987-08-06 Electrode forming method for solar cell

Publications (1)

Publication Number Publication Date
JPS6441277A true JPS6441277A (en) 1989-02-13

Family

ID=16397235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198807A Pending JPS6441277A (en) 1987-08-06 1987-08-06 Electrode forming method for solar cell

Country Status (1)

Country Link
JP (1) JPS6441277A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744847B2 (en) * 1991-06-11 1998-04-28 エイエスイー・アメリカス・インコーポレーテッド Improved solar cell and method for manufacturing the same
WO2009150741A1 (en) * 2008-06-12 2009-12-17 三菱電機株式会社 Photovoltaic device manufacturing method
CN102479883A (en) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 Method for forming positive electrode of solar cell
JP2013201217A (en) * 2012-03-23 2013-10-03 Mitsubishi Electric Corp Solar cell and manufacturing method thereof
TWI420676B (en) * 2008-08-22 2013-12-21 Big Sun Energy Technology Inc Solar cell having toothed electrode and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744847B2 (en) * 1991-06-11 1998-04-28 エイエスイー・アメリカス・インコーポレーテッド Improved solar cell and method for manufacturing the same
WO2009150741A1 (en) * 2008-06-12 2009-12-17 三菱電機株式会社 Photovoltaic device manufacturing method
TWI420676B (en) * 2008-08-22 2013-12-21 Big Sun Energy Technology Inc Solar cell having toothed electrode and method of manufacturing the same
CN102479883A (en) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 Method for forming positive electrode of solar cell
JP2013512555A (en) * 2009-11-27 2013-04-11 無錫尚徳太陽能電力有限公司 Method for forming front electrode of solar cell
JP2013201217A (en) * 2012-03-23 2013-10-03 Mitsubishi Electric Corp Solar cell and manufacturing method thereof

Similar Documents

Publication Publication Date Title
IE851819L (en) Self-supporting ceramic materials
JPS6441277A (en) Electrode forming method for solar cell
EP0226311A3 (en) Process for annealing iii-v compound semiconductor material
JPS6425594A (en) Manufacture of circuit board
IE781395L (en) Varistor
JPS5772874A (en) Thermal head and preparation thereof
JPS5661175A (en) Thin-film solar cell
JPS55151334A (en) Fabricating method of semiconductor device
JPS5437690A (en) Manufacture for semiconductor device
JPS5563287A (en) Thermal head
JPS557474A (en) Forming method for film resistor of thermal recording head
JPS5447492A (en) Thyristor
JPS54158188A (en) Manufacture of semiconductor device
JPS56153767A (en) Manufacture of planar type thyristor
JPS5713776A (en) Photovoltaic device
JPS6443916A (en) Characteristic control for compound system superconductor
JPS6439780A (en) Manufacture of solar cell
JPS57199270A (en) Photoelectric converter
JPS57146618A (en) Vacuum forming method by plug
JPS52122079A (en) Forming method of ohmic electrodes
JPS5483373A (en) Heating-up method of semiconductor substrate
JPS6418272A (en) Manufacture of gate electrode
JPS6459795A (en) Manufacture of thin film electroluminescence element
JPS5519804A (en) Method of manufacturing semiconductor device
JPS6393171A (en) Photovoltaic element