JPS6423575A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6423575A
JPS6423575A JP17968787A JP17968787A JPS6423575A JP S6423575 A JPS6423575 A JP S6423575A JP 17968787 A JP17968787 A JP 17968787A JP 17968787 A JP17968787 A JP 17968787A JP S6423575 A JPS6423575 A JP S6423575A
Authority
JP
Japan
Prior art keywords
film
formed
piled
gate electrode
form
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17968787A
Inventor
Yasushi Kubota
Atsushi Kudo
Masayoshi Koba
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Priority to JP17968787A priority Critical patent/JPS6423575A/en
Publication of JPS6423575A publication Critical patent/JPS6423575A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To obtain high efficiency when polycrystalline silicon is hydrogenated, by using a single substance of specific metals or an alloy material of them to form a gate electrode in a thin film transistor which forms a MISFET. CONSTITUTION:A gate electrode 5 in in FET is formed of a single substance of one species out of M0, W, Ta, Ti, Pt, Pd, and Cu, or it is formed of an alloy material of them. Namely an active layer part 2 of a polycrystalline silicon thin film is formed on a substrate 1, and a silicon oxide film 3 is piled on the part 2, and a silicon nitride film 4 is piled on the film 3 to form a gate insulation film. In succession, for example, single-substance molybdenum is piled on the film 4, and next it is patterned to form a gate electrode 5, and B ions are implanted to form source and drain parts. Annealing is performed to activate the implanted impurities. A silicon nitride film 7 is piled and then contact holes 8 and 9 are opened there. After the piling of AlSi, source and drain electrodes 10, 11 are formed. Finally, annealing is performed to make hydrogen in the silicon nitride film diffused in the active layer. Accordingly this gate electrode can be formed high in hydrogen transmissivity, and so hydro genation efficiency can be upgraded.
JP17968787A 1987-07-17 1987-07-17 Thin film transistor Pending JPS6423575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17968787A JPS6423575A (en) 1987-07-17 1987-07-17 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17968787A JPS6423575A (en) 1987-07-17 1987-07-17 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6423575A true JPS6423575A (en) 1989-01-26

Family

ID=16070113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17968787A Pending JPS6423575A (en) 1987-07-17 1987-07-17 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6423575A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399960B1 (en) 1998-07-16 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it
US6608357B1 (en) 1998-07-16 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7019385B1 (en) 1996-04-12 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
JP2009027200A (en) * 1992-04-06 2009-02-05 Semiconductor Energy Lab Co Ltd Insulated gate-type semiconductor device and method of manufacturing the same
JPWO2015052991A1 (en) * 2013-10-09 2017-03-09 シャープ株式会社 Semiconductor device and manufacturing method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2009027200A (en) * 1992-04-06 2009-02-05 Semiconductor Energy Lab Co Ltd Insulated gate-type semiconductor device and method of manufacturing the same
US7838968B2 (en) 1996-04-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US7019385B1 (en) 1996-04-12 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US6399960B1 (en) 1998-07-16 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it
US6822293B2 (en) 1998-07-16 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
US7078768B2 (en) 1998-07-16 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
US6586766B2 (en) 1998-07-16 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it
US6608357B1 (en) 1998-07-16 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
JPWO2015052991A1 (en) * 2013-10-09 2017-03-09 シャープ株式会社 Semiconductor device and manufacturing method thereof

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