JPS642340A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS642340A JPS642340A JP15857987A JP15857987A JPS642340A JP S642340 A JPS642340 A JP S642340A JP 15857987 A JP15857987 A JP 15857987A JP 15857987 A JP15857987 A JP 15857987A JP S642340 A JPS642340 A JP S642340A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- resistance
- resin
- substrate
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
PURPOSE: To obtain a high moisture resistance and a high heat resistance and impact resistance by a method wherein a semiconductor element is sealed with a sealing resin, whose filling material is unevenly distributed in the vicinity of the semiconductor element.
CONSTITUTION: A semiconductor element 2 is die bonded on a substrate 1 for the semiconductor element and consisting of a glass epoxy resin material with a silver paste 6 and thereafter, is connected electrically with the outside by an Al wire bonding 7. Then, a fluid sealing resin 3 obtainable by kneading a filling material 4 in an epoxy resin is dipped on the element 2 and after the resin is heated at low temperature to make the material 4 distribute unevenly, a cap 5 consisting of Al is placed on the substrate 1 and is fixed by thermocompression bonding. In such a way, a high moisture resistance and a high heat resistance and impact resistance can be obtained.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15857987A JPS642340A (en) | 1987-06-25 | 1987-06-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15857987A JPS642340A (en) | 1987-06-25 | 1987-06-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH012340A JPH012340A (en) | 1989-01-06 |
JPS642340A true JPS642340A (en) | 1989-01-06 |
Family
ID=15674774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15857987A Pending JPS642340A (en) | 1987-06-25 | 1987-06-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS642340A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6882041B1 (en) * | 2002-02-05 | 2005-04-19 | Altera Corporation | Thermally enhanced metal capped BGA package |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953387A (en) * | 1972-09-27 | 1974-05-23 |
-
1987
- 1987-06-25 JP JP15857987A patent/JPS642340A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4953387A (en) * | 1972-09-27 | 1974-05-23 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6882041B1 (en) * | 2002-02-05 | 2005-04-19 | Altera Corporation | Thermally enhanced metal capped BGA package |
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