JPS6417879A - Method for etching gallium phosphide crystal and liquid etchant used therefor - Google Patents
Method for etching gallium phosphide crystal and liquid etchant used thereforInfo
- Publication number
- JPS6417879A JPS6417879A JP17397987A JP17397987A JPS6417879A JP S6417879 A JPS6417879 A JP S6417879A JP 17397987 A JP17397987 A JP 17397987A JP 17397987 A JP17397987 A JP 17397987A JP S6417879 A JPS6417879 A JP S6417879A
- Authority
- JP
- Japan
- Prior art keywords
- etchant
- gallium phosphide
- liq
- hydrogen peroxide
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To distinctly and stably expose a dislocation pit by using a liq. mixture contg. hydrofluoric acid and hydrogen peroxide to etch th gallium phosphide crystal having a (100) face. CONSTITUTION:Hydrogen peroxide and hydrofluoric acid are mixed to prepare a liq. etchant. In this case, a 50wt.% soln. of hydrogen peroxide and a 30wt.% soln. of hydrofluoric acid are mixed in the volume ratio of about 1/4-4/1. The gallium phosphide having a (100) face is etched by using the obtained liq. etchant. As a result, the etched pit corresponding to dislocation can be exposed in the form of an inverted quadrangular pyramid, and can be accurately observed by a differential interference microscope, etc. In addition, the etchant is appropriately kept at about 80 deg.C, phosphoric acid, nitric acid, etc., can be added to the etchant, or the etchant can be diluted with water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17397987A JPS6417879A (en) | 1987-07-14 | 1987-07-14 | Method for etching gallium phosphide crystal and liquid etchant used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17397987A JPS6417879A (en) | 1987-07-14 | 1987-07-14 | Method for etching gallium phosphide crystal and liquid etchant used therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6417879A true JPS6417879A (en) | 1989-01-20 |
Family
ID=15970557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17397987A Pending JPS6417879A (en) | 1987-07-14 | 1987-07-14 | Method for etching gallium phosphide crystal and liquid etchant used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417879A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0540497A2 (en) * | 1991-10-29 | 1993-05-05 | Alcatel Austria Aktiengesellschaft | Method of making solid solder coatings |
| JPH0722895U (en) * | 1993-09-30 | 1995-04-25 | 丸石自転車株式会社 | Bicycle brake booster |
| USRE39126E1 (en) * | 1992-01-24 | 2006-06-13 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| CN103217328A (en) * | 2013-03-26 | 2013-07-24 | 中国科学院上海技术物理研究所 | Corrosion liquid used for revealing various defects of cadmium zinc telluride crystals |
| CN110205681A (en) * | 2019-06-03 | 2019-09-06 | 中国科学院半导体研究所 | Indium arsenide single-chip dislocation corrosion liquid and dislocation corrosion detecting method |
-
1987
- 1987-07-14 JP JP17397987A patent/JPS6417879A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0540497A2 (en) * | 1991-10-29 | 1993-05-05 | Alcatel Austria Aktiengesellschaft | Method of making solid solder coatings |
| USRE39126E1 (en) * | 1992-01-24 | 2006-06-13 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| JPH0722895U (en) * | 1993-09-30 | 1995-04-25 | 丸石自転車株式会社 | Bicycle brake booster |
| CN103217328A (en) * | 2013-03-26 | 2013-07-24 | 中国科学院上海技术物理研究所 | Corrosion liquid used for revealing various defects of cadmium zinc telluride crystals |
| CN110205681A (en) * | 2019-06-03 | 2019-09-06 | 中国科学院半导体研究所 | Indium arsenide single-chip dislocation corrosion liquid and dislocation corrosion detecting method |
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