JPS6393854A - 基板反応法による鉛シエブレル相化合物薄膜の製造方法 - Google Patents
基板反応法による鉛シエブレル相化合物薄膜の製造方法Info
- Publication number
- JPS6393854A JPS6393854A JP23547886A JP23547886A JPS6393854A JP S6393854 A JPS6393854 A JP S6393854A JP 23547886 A JP23547886 A JP 23547886A JP 23547886 A JP23547886 A JP 23547886A JP S6393854 A JPS6393854 A JP S6393854A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- lead
- mos2
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 title claims description 45
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 17
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 4
- 229940056932 lead sulfide Drugs 0.000 claims description 4
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 claims 2
- 239000010453 quartz Substances 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052961 molybdenite Inorganic materials 0.000 abstract description 11
- 230000005291 magnetic effect Effects 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 229910000341 lead(IV) sulfide Inorganic materials 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910016523 CuKa Inorganic materials 0.000 description 1
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23547886A JPS6393854A (ja) | 1986-10-04 | 1986-10-04 | 基板反応法による鉛シエブレル相化合物薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23547886A JPS6393854A (ja) | 1986-10-04 | 1986-10-04 | 基板反応法による鉛シエブレル相化合物薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6393854A true JPS6393854A (ja) | 1988-04-25 |
| JPH0558058B2 JPH0558058B2 (enrdf_load_stackoverflow) | 1993-08-25 |
Family
ID=16986660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23547886A Granted JPS6393854A (ja) | 1986-10-04 | 1986-10-04 | 基板反応法による鉛シエブレル相化合物薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6393854A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002275000A (ja) * | 2001-03-14 | 2002-09-25 | Res Inst Electric Magnetic Alloys | 高平坦性ファセットを有する高品質バルク単結晶の成長法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9410487B2 (en) | 2013-12-19 | 2016-08-09 | Honda Motor Co., Ltd. | Control apparatus for general purpose machine |
-
1986
- 1986-10-04 JP JP23547886A patent/JPS6393854A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002275000A (ja) * | 2001-03-14 | 2002-09-25 | Res Inst Electric Magnetic Alloys | 高平坦性ファセットを有する高品質バルク単結晶の成長法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558058B2 (enrdf_load_stackoverflow) | 1993-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |