JPS6380258A - Mask - Google Patents

Mask

Info

Publication number
JPS6380258A
JPS6380258A JP22358986A JP22358986A JPS6380258A JP S6380258 A JPS6380258 A JP S6380258A JP 22358986 A JP22358986 A JP 22358986A JP 22358986 A JP22358986 A JP 22358986A JP S6380258 A JPS6380258 A JP S6380258A
Authority
JP
Japan
Prior art keywords
pattern
patterns
light beam
mask
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22358986A
Inventor
Sakae Matsuzaki
Ryoichi Ono
Original Assignee
Hitachi Ltd
Hitachi Micro Comput Eng Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Micro Comput Eng Ltd filed Critical Hitachi Ltd
Priority to JP22358986A priority Critical patent/JPS6380258A/en
Publication of JPS6380258A publication Critical patent/JPS6380258A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Abstract

PURPOSE:To decrease the number of pieces of a mask to be prepared in a process for transferring plural kinds of patterns, by forming at least two kinds of patterns in a mask blank, respectively, and also, constituting each pattern so that a light beam of a specific wavelength is allowed to transmit through. CONSTITUTION:At least two kinds of patterns 4, 6 are formed in a mask blank 2, respectively, and also, each pattern 4, 6 is constituted so that a light beam of a specific wavelength is allowed to transmit through. When a light beam having a specific single wavelength is radiated as an exposure light to a photomask 1, this light transmits through only a part of the pattern 4 which has been constituted so as to correspond to its single wavelength, therefore, only its pattern 4 is transferred. Thereafter, when a light beam having other single wavelength is radiated as an exposure light to the photomask 1, only other pattern 6 is transferred at this time. In this way, the number of pieces of a mask to be prepared in a process for transferring plural kinds of patterns can be decreased.
JP22358986A 1986-09-24 1986-09-24 Mask Pending JPS6380258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22358986A JPS6380258A (en) 1986-09-24 1986-09-24 Mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22358986A JPS6380258A (en) 1986-09-24 1986-09-24 Mask

Publications (1)

Publication Number Publication Date
JPS6380258A true JPS6380258A (en) 1988-04-11

Family

ID=16800534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22358986A Pending JPS6380258A (en) 1986-09-24 1986-09-24 Mask

Country Status (1)

Country Link
JP (1) JPS6380258A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5472811A (en) * 1993-01-21 1995-12-05 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US6136479A (en) * 1998-07-03 2000-10-24 Mitsubishi Denki Kabushiki Kaisha Method of forming photomask and pattern and method of forming a semiconductor device
US6677107B1 (en) 1999-06-30 2004-01-13 Hitacji, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2006317737A (en) * 2005-05-13 2006-11-24 Dainippon Printing Co Ltd Mask for exposure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5472811A (en) * 1993-01-21 1995-12-05 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US6136479A (en) * 1998-07-03 2000-10-24 Mitsubishi Denki Kabushiki Kaisha Method of forming photomask and pattern and method of forming a semiconductor device
US6677107B1 (en) 1999-06-30 2004-01-13 Hitacji, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
US7125651B2 (en) 1999-06-30 2006-10-24 Renesas Technology Corp. Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks
JP2006317737A (en) * 2005-05-13 2006-11-24 Dainippon Printing Co Ltd Mask for exposure

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