JPS6372123A - Microwave plasma treatment device - Google Patents

Microwave plasma treatment device

Info

Publication number
JPS6372123A
JPS6372123A JP21501686A JP21501686A JPS6372123A JP S6372123 A JPS6372123 A JP S6372123A JP 21501686 A JP21501686 A JP 21501686A JP 21501686 A JP21501686 A JP 21501686A JP S6372123 A JPS6372123 A JP S6372123A
Authority
JP
Japan
Prior art keywords
microwave
metallic piece
waveguide
transmission window
microwaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21501686A
Other languages
Japanese (ja)
Inventor
Shuzo Fujimura
藤村 修三
Yoshikazu Kato
加藤 吉和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21501686A priority Critical patent/JPS6372123A/en
Publication of JPS6372123A publication Critical patent/JPS6372123A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make uniform and improve a treatment speed by making an energy distribution uniform, thereby arranging a metallic phase shifter for diffusing microwaves inside of a waveguide. CONSTITUTION:A phase shifter 18 is composed of, for example, a metallic piece 18a of aluminum and the like as well as a support 18b made of teflon as a heat resisting insulator, while it is necessary for the metallic piece 18a not to be earthed but to be electrically floated, because it is liable to absorb microwaves, once it comes in contact with a waveguide and so on. Therefore, the support 18b is composed of an electric insulator. As to effects of this metallic piece 18a, it is deemed to be as follows: it is not always clear from the theoretical point of view for this metallic piece to be considered that is serves as a kind of antenna and also the microwaves are so reflected and diffused by the metallic piece that an uniform energy distribution can be obtained by this metallic piece. However, plasmas can be uniformly developed by a convolutional effect between a microwave that directly passes through a transmission aperture 13 and other microwave that is reflected from the metallic piece and transmitted.

Description

【発明の詳細な説明】 〔概 要〕 マイクロ波透過窓をマイクロ波の電場に対して垂直方向
に設けた導波管と、この透過窓により真空封止される真
空容器により構成されるマイクロ波プラズマ処理装置に
おいて、導波管内にマイクロ波を拡散するための金属製
の移相器を設はエネルギー分布の均一化を図ることによ
って処理速度の均一化と向上を図ったものである。
[Detailed Description of the Invention] [Summary] A microwave system consisting of a waveguide with a microwave transmission window provided in a direction perpendicular to the electric field of the microwave, and a vacuum container that is vacuum-sealed by the transmission window. In a plasma processing apparatus, a metal phase shifter for diffusing microwaves is installed in a waveguide to make the energy distribution uniform, thereby making the processing speed uniform and improving.

〔産業上の利用分野〕[Industrial application field]

本発明はマイクロ波を用いてプラズマを発生させ被加工
物表面の処理を行なうマイクロ波プラズマ処理装置に関
する。
The present invention relates to a microwave plasma processing apparatus that generates plasma using microwaves and processes the surface of a workpiece.

〔従来の技術〕[Conventional technology]

第4図は従来のマイクロ波プラズマ処理装置の概略断面
図である。この装置は、半導体集積回路素子の製造にあ
たりドライエツチング技術の一つとして用いられるマイ
クロ波プラズマエツチング法に使用される。第4図にお
いて、10は真空容器、11はマイクロ波12を導く導
波管、13は誘電体として石英又はアルミナで作ったマ
イクロ波透過窓、14は被加工物例えばウェハ、15は
ステージ、16は図示しない公知の排気系に連結された
排気口、17は酸素(0□)ガス等のガス導入口を示す
。図示の如く、被加工物14は真空容器10内のステー
ジ15に載置されている。また、マイクロ波透過窓13
は真空容器10と導波管11の境界にマイクロ波の電場
に対して垂直方向(即ち、マイクロ波の進行方向に対し
て平行)に設けられ、真空容器10はこの透過窓を境界
にして真空封止されている。このように電場に垂直とな
る方向にマイクロ波透過窓を配置してもマイクロ波のモ
ードは乱れることはなく真空容器lo内に効率よく吸収
される。しかも真空容器内は真空からプラズマまでイン
ピーダンスが大きく変化するが、マツチングは容易に取
ることができる。
FIG. 4 is a schematic cross-sectional view of a conventional microwave plasma processing apparatus. This apparatus is used in the microwave plasma etching method, which is used as one of the dry etching techniques in manufacturing semiconductor integrated circuit devices. In FIG. 4, 10 is a vacuum container, 11 is a waveguide that guides the microwave 12, 13 is a microwave transmission window made of quartz or alumina as a dielectric, 14 is a workpiece such as a wafer, 15 is a stage, and 16 Reference numeral 17 indicates an exhaust port connected to a known exhaust system (not shown), and 17 indicates a gas inlet for oxygen (0□) gas or the like. As shown in the figure, the workpiece 14 is placed on a stage 15 within the vacuum container 10. In addition, the microwave transmission window 13
is provided at the boundary between the vacuum vessel 10 and the waveguide 11 in a direction perpendicular to the electric field of the microwave (that is, parallel to the direction of propagation of the microwave), and the vacuum vessel 10 is provided with a vacuum with this transmission window as the boundary. It is sealed. Even if the microwave transmission window is arranged in the direction perpendicular to the electric field in this way, the microwave mode is not disturbed and is efficiently absorbed in the vacuum container lo. Moreover, although the impedance inside the vacuum container varies greatly from vacuum to plasma, matching can be easily achieved.

この装置において、例えば2.45GHzのマイクロ波
を用いるとき、マイクロ波透過窓13は12mmの厚さ
の石英で作り、ステージ15の表面と透過窓13との間
の距離すは3mm、ステージ表面と導波管11の土壁と
の間の距離Cを50mmに設定することによりマイクロ
波プラズマ装置を小型化している。そして真空容器lO
内に300ccのo2ガスをガス導入口17から注入し
、0.37orrの真空度、1.5 kwのマイクロ波
パワーで発生したOtガスのプラズマによってウェハ1
4上のレジストを剥離する。その結果、Otプラズマに
おいて、ITorrの真空度で、マツチングなしでマイ
クロ波の反射は30%、マツチングをとると反射は5%
とマイクロ波の整合性がすぐれている。
In this device, when using a microwave of 2.45 GHz, for example, the microwave transmission window 13 is made of quartz with a thickness of 12 mm, the distance between the surface of the stage 15 and the transmission window 13 is 3 mm, and the distance between the stage surface and the transmission window 13 is 3 mm. By setting the distance C between the waveguide 11 and the earthen wall to 50 mm, the microwave plasma apparatus is miniaturized. and vacuum container lO
300 cc of O2 gas was injected into the chamber from the gas inlet 17, and the wafer 1 was heated by O2 gas plasma generated at a vacuum level of 0.37 orr and a microwave power of 1.5 kW.
4. Peel off the resist on top. As a result, in Ot plasma, at a vacuum level of ITorr, the microwave reflection is 30% without matching, and 5% with matching.
and microwave consistency are excellent.

また、ステージ15の内部は真空状態にする必要はない
から、冷却装置を容易に設置することができ、100℃
以下でのプラズマ処理も可能である。
In addition, since the inside of the stage 15 does not need to be in a vacuum state, a cooling device can be easily installed, and the temperature
Plasma treatment below is also possible.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述の従来の装置においては以下のような問題がある。 The conventional device described above has the following problems.

即ち、ウェハ表面のレジスト剥離等のエツチング処理速
度は、それ以前のマイクロ波の電場に対して透過窓を水
平に設置する形式に比べて大幅に改善されるが、被加工
物全領域から見ると中央附近と周辺附近とで処理速度に
相変らずむらがあり、結局さらに処理速度を向上させる
上では問題を残している。例えば、前述の2.45GH
zのマイクロ波を用いるとき、導波管11の断面積を例
えば55 X 110mm”とすると、被加工物がウェ
ハの場合、直径125mm又は150n+mが一般的で
あるため、ウェハの中央附近の処理が早く、周辺にいく
につれて遅くなる。実際の例として、前述の如く真空容
器10内に300ccの0.ガスを注入し、真空度0、
3 Torr、、マイクロ波のパワーを1.5kw、被
加工物であるウェハの直径を150mm(61nchタ
イプ)、剥離すべきレジストの厚みを1.2μmとした
とき、実測では処理速度の早い個所で剥離に約15秒要
したのに対して、遅い個所では約40秒要する結果とな
り、結局全体の処理速度はこの遅い方に制約されること
となる。
In other words, the speed of etching processes such as resist removal on the wafer surface is greatly improved compared to the previous method in which a transmission window is installed horizontally to the microwave electric field, but when viewed from the entire area of the workpiece, The processing speed remains uneven between the center and the periphery, and there remains a problem in further improving the processing speed. For example, the aforementioned 2.45GH
When using microwaves of Z, if the cross-sectional area of the waveguide 11 is, for example, 55 x 110 mm, if the workpiece is a wafer, the diameter is generally 125 mm or 150 nm+m, so the processing near the center of the wafer will be difficult. As an actual example, as described above, 300 cc of 0.0 gas is injected into the vacuum container 10, and the degree of vacuum is 0.
3 Torr, when the microwave power is 1.5 kW, the diameter of the wafer to be processed is 150 mm (61 nch type), and the thickness of the resist to be peeled is 1.2 μm, actual measurements show that While peeling took about 15 seconds, it took about 40 seconds at slower locations, and the overall processing speed was ultimately limited to this slower rate.

〔問題点を解決するための手段および作用〕本発明は上
述の問題点を解消したマイクロ波プラズマ処理装置を提
供することにあり、その手段は、マイクロ波を導入する
マイクロ波導波管と、該マイクロ波導波管にマイクロ波
の電場に対して垂直方向に設けたマイクロ波透過窓と、
該マイクロ波透過窓によって真空封止されかつ被加工物
を収容する真空容器とを有するマイクロ波プラズマ処理
装置において、該マイクロ波導波管の内部に該マイクロ
波を拡散するための金属製の移相手段を設けたことを特
徴とする。
[Means and effects for solving the problems] The present invention aims to provide a microwave plasma processing apparatus that solves the above-mentioned problems. A microwave transmission window provided in the microwave waveguide in a direction perpendicular to the microwave electric field,
In a microwave plasma processing apparatus having a vacuum container vacuum-sealed by the microwave transmission window and accommodating a workpiece, a metal phase shifter for diffusing the microwave into the inside of the microwave waveguide. It is characterized by having a means.

〔実施例〕〔Example〕

第1図は本発明に係るマイクロ波プラズマ処理装置の概
略断面図である。第1図において従来と同一構成要素に
は同一番号が附与されている。
FIG. 1 is a schematic cross-sectional view of a microwave plasma processing apparatus according to the present invention. In FIG. 1, the same numbers are given to the same components as in the prior art.

18は本発明に係る移相器の取付断面図である。18 is an installation sectional view of the phase shifter according to the present invention.

移相器18は第2図に概略上面図、第3図に斜視図で示
す如き構造となっている。即ち、移相器18は、例えば
、アルミニウム等の金属片18aと耐熱性絶縁物として
のテフロンによる支持体18bにより構成される。第3
図に示す如く金属片18aは支持体18bに嵌入され固
定されている。支持体18bは導波管11の内側上面に
例えばネジ止めされる。また、移相器18の位置として
は図示の如く経験的に金属片18aの先端と透過窓13
との面が合うように設けるのがよい。金属片18aの寸
法は61nchのウェハの場合2辺が5cImの2等辺
3角形状のアルミニウム板が適切である。
The phase shifter 18 has a structure as shown in a schematic top view in FIG. 2 and in a perspective view in FIG. 3. That is, the phase shifter 18 is composed of a metal piece 18a made of, for example, aluminum and a support body 18b made of Teflon as a heat-resistant insulator. Third
As shown in the figure, the metal piece 18a is fitted into and fixed to the support 18b. The support body 18b is screwed onto the inner upper surface of the waveguide 11, for example. Further, as shown in the figure, the position of the phase shifter 18 is empirically determined between the tip of the metal piece 18a and the transmission window 13.
It is best to install it so that the two sides are aligned. In the case of a 61 nch wafer, an aluminum plate having an isosceles triangular shape with two sides of 5 cIm is appropriate for the size of the metal piece 18a.

金属片18aは接地せず電位的に浮かせる必要がある。The metal piece 18a needs to be floated at potential without being grounded.

これは導波管等に接地するとマイクロ波を吸収してしま
うからである。このため支持体18bは電気的vA縁物
で構成されている。この金属片18aの作用は次のよう
に考えられる。即ち、理論的には必ずしも明確ではない
が、この金属片が一種のアンテナとして作用し、マイク
ロ波を反射し、拡散することにより均一なエネルギー分
布が得られるためと考えられ、直接透過窓13を透過す
るマイクロ波と金属片から反射して透過するマイクロ波
との重畳作用によってプラズマを均一に発生させること
ができるものである。
This is because if it is grounded to a waveguide or the like, microwaves will be absorbed. For this purpose, the support 18b is constructed with an electrical vA edge. The action of this metal piece 18a can be considered as follows. In other words, although it is not necessarily theoretically clear, it is thought that this metal piece acts as a kind of antenna, reflecting and diffusing the microwaves to obtain a uniform energy distribution. Plasma can be uniformly generated by the superposition of the transmitted microwave and the microwave reflected from the metal piece and transmitted.

経験的には前述の如< 2.45G)lzのマイクロ波
を用い、真空容器10内に300ccの02ガスを注入
し、真空度Q、 3 Torr−、マイクロ波のパワー
を1.5kw、被加工物であるウェハの直径を150m
m 、レジストの厚みを1.2μmとしたとき、レジス
ト剥離に要した時間は均一に20〜25秒であり、従来
の最大40秒に比べて全体的に処理速度の向上が顕著で
ある。
Empirically, 300 cc of 02 gas was injected into the vacuum container 10 using a microwave of The diameter of the wafer that is the workpiece is 150m.
m, and when the resist thickness is 1.2 μm, the time required for resist peeling is uniformly 20 to 25 seconds, which is a remarkable overall improvement in processing speed compared to the conventional maximum of 40 seconds.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、マイクロ波導波
管を電場に対して垂直方向に設置することによりマイク
ロ波の透過窓に対する反射が減少するので被加工物の処
理速度の向上が図れると共に、移相器によるマイクロ波
の均一なエネルギー分布によって被加工物表面の処理む
らを解消することができ全体としてのレジスト剥離等の
処理速度の向上が図れる。
As explained above, according to the present invention, by installing the microwave waveguide in a direction perpendicular to the electric field, the reflection of microwaves against the transmission window is reduced, so that the processing speed of the workpiece can be improved. The uniform energy distribution of microwaves by the phase shifter can eliminate processing unevenness on the surface of the workpiece, and improve the overall processing speed for resist stripping and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係るマイクロ波プラズマ処理装置の一
実施例概略断面図、 第2図は第1図装置の概略上面図、 第3図は第1図装置の移相器の斜視図、および第4図は
従来のマイクロ波プラズマ処理装置の概略断面図である
。 (符号の説明) 10・・・真空容器、   11・・・マイクロ波導波
管、12・・・マイクロ波、 13・・・マイクロ波透
過窓、14・・・被加工物、   15・・・ステージ
、16・・・排気口、    17・・・ガス導入口、
18・・・移相器、   18a・・・金属片、18b
・・・支持体。
FIG. 1 is a schematic sectional view of an embodiment of the microwave plasma processing apparatus according to the present invention, FIG. 2 is a schematic top view of the apparatus shown in FIG. 1, and FIG. 3 is a perspective view of the phase shifter of the apparatus shown in FIG. 1. and FIG. 4 is a schematic cross-sectional view of a conventional microwave plasma processing apparatus. (Explanation of symbols) 10... Vacuum container, 11... Microwave waveguide, 12... Microwave, 13... Microwave transmission window, 14... Workpiece, 15... Stage , 16...Exhaust port, 17...Gas inlet port,
18... Phase shifter, 18a... Metal piece, 18b
...Support.

Claims (1)

【特許請求の範囲】 1、マイクロ波を導入するマイクロ波導波管と、該マイ
クロ波導波管にマイクロ波の電場に対して垂直方向に設
けたマイクロ波透過窓と、該マイクロ波透過窓によって
真空封止されかつ被加工物を収容する真空容器とを有す
るマイクロ波プラズマ処理装置において、該マイクロ波
導波管の内部であって、該マイクロ波透過窓の上方に該
マイクロ波を拡散するための金属製の移相手段を設けた
ことを特徴とするマイクロ波プラズマ処理装置。 2、該移相手段が3角形状の金属板から成る特許請求の
範囲第1項記載の装置。 3、該移相手段が電位的に浮いた状態に支持される特許
請求の範囲第1項記載の装置。
[Claims] 1. A microwave waveguide for introducing microwaves, a microwave transmission window provided in the microwave waveguide in a direction perpendicular to the electric field of the microwave, and a vacuum transmission window formed by the microwave transmission window. In a microwave plasma processing apparatus having a sealed vacuum vessel for accommodating a workpiece, a metal for diffusing the microwaves inside the microwave waveguide and above the microwave transmission window. A microwave plasma processing apparatus characterized in that it is provided with a phase shifting means manufactured by Manufacturer. 2. The device according to claim 1, wherein the phase shifting means comprises a triangular metal plate. 3. The device according to claim 1, wherein the phase shifting means is supported in an electrically floating state.
JP21501686A 1986-09-13 1986-09-13 Microwave plasma treatment device Pending JPS6372123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21501686A JPS6372123A (en) 1986-09-13 1986-09-13 Microwave plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21501686A JPS6372123A (en) 1986-09-13 1986-09-13 Microwave plasma treatment device

Publications (1)

Publication Number Publication Date
JPS6372123A true JPS6372123A (en) 1988-04-01

Family

ID=16665328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21501686A Pending JPS6372123A (en) 1986-09-13 1986-09-13 Microwave plasma treatment device

Country Status (1)

Country Link
JP (1) JPS6372123A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230740A (en) * 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
JPH076895A (en) * 1993-12-17 1995-01-10 Hitachi Ltd Microwave plasma processing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230740A (en) * 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
US5449412A (en) * 1991-12-17 1995-09-12 Crystallume Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes
JPH076895A (en) * 1993-12-17 1995-01-10 Hitachi Ltd Microwave plasma processing device
JP2607832B2 (en) * 1993-12-17 1997-05-07 株式会社日立製作所 Microwave plasma processing method

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