JPS6367350B2 - - Google Patents

Info

Publication number
JPS6367350B2
JPS6367350B2 JP59001921A JP192184A JPS6367350B2 JP S6367350 B2 JPS6367350 B2 JP S6367350B2 JP 59001921 A JP59001921 A JP 59001921A JP 192184 A JP192184 A JP 192184A JP S6367350 B2 JPS6367350 B2 JP S6367350B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
semiconductor
laminated
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59001921A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59171188A (ja
Inventor
Shigeo Yamashita
Kunio Aiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP192184A priority Critical patent/JPS59171188A/ja
Publication of JPS59171188A publication Critical patent/JPS59171188A/ja
Publication of JPS6367350B2 publication Critical patent/JPS6367350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP192184A 1984-01-11 1984-01-11 半導体レ−ザ素子 Granted JPS59171188A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP192184A JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP192184A JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS59171188A JPS59171188A (ja) 1984-09-27
JPS6367350B2 true JPS6367350B2 (fr) 1988-12-26

Family

ID=11515054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP192184A Granted JPS59171188A (ja) 1984-01-11 1984-01-11 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS59171188A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05254378A (ja) * 1991-11-18 1993-10-05 Eberhard Wissmann 後ろ向き駐車援助装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585230B2 (ja) * 1986-09-16 1997-02-26 株式会社日立製作所 半導体レ−ザ装置
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
JP2674594B2 (ja) * 1996-05-31 1997-11-12 株式会社日立製作所 半導体レーザ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05254378A (ja) * 1991-11-18 1993-10-05 Eberhard Wissmann 後ろ向き駐車援助装置

Also Published As

Publication number Publication date
JPS59171188A (ja) 1984-09-27

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