JPS6365714A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6365714A JPS6365714A JP61210249A JP21024986A JPS6365714A JP S6365714 A JPS6365714 A JP S6365714A JP 61210249 A JP61210249 A JP 61210249A JP 21024986 A JP21024986 A JP 21024986A JP S6365714 A JPS6365714 A JP S6365714A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- voltage
- standby
- power supply
- internal circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 230000010355 oscillation Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特にスタンバイモード
を有するCMO3構造の半導体集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and more particularly to a CMO3 structure semiconductor integrated circuit having a standby mode.
従来からCMO3構造の半導体集積回路では、クロック
のON、OFF時のみに電流が流れるというCMO3の
特徴をいかし、システムクロックを0FFL、回路全体
を低消費電力化するいわゆるスタンバイモードを有して
いる製品が数多く存在する。Traditionally, semiconductor integrated circuits with a CMO3 structure have a so-called standby mode that takes advantage of the CMO3 feature that current flows only when the clock is ON or OFF, setting the system clock to 0FFL and reducing the power consumption of the entire circuit. There are many.
上述した従来のCMO3構造のスタンバイモードでは、
システムクロックをストップする事によりCMO3回路
の貫通電流や充放電流を無くシフ、又、定常的に電流が
流れている回路は直列にトランジスタスイッチを挿入し
、スタンバイモード信号でトランジスタをOFFする事
で回路全体を低消費電力化していたが、上述のスタンバ
イモードでは回路を構成している素子に欠陥が存在する
と、欠陥部分に流れる電流によりスタンバ・rモード時
の消費電力が増加する。この欠陥によるリークはジャン
クション性のものとチャンネル性のものに分けられるが
、一般に集積度が高い程発生率は高く、リーク電流レベ
ルも大きいという欠点がある。In the standby mode of the conventional CMO3 structure mentioned above,
By stopping the system clock, the through current and charging/discharging current of the CMO3 circuit can be eliminated, and for circuits where current is constantly flowing, a transistor switch can be inserted in series, and the transistor can be turned off using the standby mode signal. Although the power consumption of the entire circuit has been reduced, in the standby mode described above, if there is a defect in an element constituting the circuit, the power consumption in the standby/r mode increases due to the current flowing to the defective part. Leakage due to this defect can be divided into junction-type and channel-type leakage, but generally speaking, the higher the degree of integration, the higher the rate of occurrence, and the higher the level of leakage current.
本発明の半導体集積回路は、クロックを停止し回路の消
費電力を減少させるスタンバイモードを検出する検出回
路と、外部から供給される電源電圧よりも低い電圧を発
生する定電圧源と、前記検出回路の信号により電源電圧
と前記定電圧源とを切換えて内部回路に供給する電源供
給回路とを有し、通常状態では電源電圧側を、スタンバ
イモード時には前記定電圧源側の電源を内部回路に供給
する事を特徴とする。The semiconductor integrated circuit of the present invention includes a detection circuit that detects a standby mode that stops a clock and reduces power consumption of the circuit, a constant voltage source that generates a voltage lower than an externally supplied power supply voltage, and the detection circuit. and a power supply circuit that switches between the power supply voltage and the constant voltage source according to a signal and supplies it to the internal circuit, and in a normal state, the power supply voltage side is supplied to the internal circuit, and in standby mode, the power supply from the constant voltage source side is supplied to the internal circuit. It is characterized by
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例を示すブロック図である。1
は電源端子、2は電源電圧より低い電圧を発生する定電
圧源、3は電源端子1からと定電圧源2からの電圧を切
換えて内部回路に供給する電源供給回路、4はスタンバ
イ信号を検出して電源供給回路3に伝える検出回路、1
0は電源供給回路3により供給される電源により動作す
る内部回路であり、5は外部からの割り込み入力端子、
11は発振回路、12はプログラムや命令フローを記憶
しているROM、13は入出力回路、14は各種演算制
御を行なう演算回路、15はデータ等を記憶するRAM
である。FIG. 1 is a block diagram showing one embodiment of the present invention. 1
is a power supply terminal, 2 is a constant voltage source that generates a voltage lower than the power supply voltage, 3 is a power supply circuit that switches the voltage from power supply terminal 1 and constant voltage source 2 and supplies it to the internal circuit, 4 detects a standby signal a detection circuit 1 which transmits the signal to a power supply circuit 3;
0 is an internal circuit operated by the power supplied by the power supply circuit 3, 5 is an interrupt input terminal from the outside,
11 is an oscillation circuit, 12 is a ROM that stores programs and instruction flows, 13 is an input/output circuit, 14 is an arithmetic circuit that performs various calculation controls, and 15 is a RAM that stores data, etc.
It is.
通常の動作状態では検出回路4はスタンバイ信号を検出
していない為、電源供給回路3に検出信号を発生しない
ので、電源供給回路3は内部回路10に対し、電源電圧
を供給しており、内部回路10は電源電圧で動作する。In normal operating conditions, the detection circuit 4 does not detect the standby signal and therefore does not generate a detection signal to the power supply circuit 3. Therefore, the power supply circuit 3 supplies the power supply voltage to the internal circuit 10, and the Circuit 10 operates on power supply voltage.
次に演算回路14からスタンバイ命令が発生すると、発
振回路11は発振を停止し、内部回路はスタンバイモー
ドに入ると同時に検出回路4が検出信号を発生し、電源
供給回路3は内部10に対して定電圧源2の電圧を供給
する。内部回路10はCMO3構造の半導体集積回路に
おいてはクロックが停止している時も、P型又はN型の
どちらかのトランジスタがONしている為に内部回路1
0に供給する電圧はP型又はN型トランジスタのしきい
値よりもわずかに高ければよく、非常に低い電圧(約1
.3〜1.5v程度)で内部回路10のスタンバイ状態
を維持できる。Next, when a standby command is generated from the arithmetic circuit 14, the oscillation circuit 11 stops oscillating, the internal circuit enters standby mode, and at the same time the detection circuit 4 generates a detection signal, and the power supply circuit 3 outputs a detection signal to the internal circuit 10. Supply voltage from constant voltage source 2. In the internal circuit 10, even when the clock is stopped in a CMO3 structure semiconductor integrated circuit, either the P-type or N-type transistor is ON, so the internal circuit 10 is
The voltage supplied to 0 only needs to be slightly higher than the threshold of the P-type or N-type transistor;
.. The standby state of the internal circuit 10 can be maintained at a voltage of about 3 to 1.5 V).
次に外部からの割り込み入力端子5からの入力によりス
タンバイモードが解除されると、発振回路11が発振を
開始し、同時に検出回路4からの検出信号が停止するの
で、電源供給回路3は内部回路10に電源電圧を供給し
、通常動作を再開する。Next, when the standby mode is canceled by an input from the external interrupt input terminal 5, the oscillation circuit 11 starts oscillating, and at the same time the detection signal from the detection circuit 4 stops, so the power supply circuit 3 10 and resumes normal operation.
通常、CMO3構造の半導体集積回路において、欠陥に
よるリーク電流は、供給電圧に対して大きく影響を受け
、低い電圧程リーク電流が少なくなり、本発明を適用す
れば軽度のリーク不良が存在しても、スタンバイ時には
低い電圧を内部回路に供給する事により、リーク電流を
減少させる事が出来、リーク電流特性の大幅な改善が可
能となる。Normally, in a semiconductor integrated circuit with a CMO3 structure, leakage current due to a defect is greatly affected by the supply voltage, and the lower the voltage, the smaller the leakage current is.If the present invention is applied, even if there is a slight leakage defect, By supplying a low voltage to the internal circuitry during standby, leakage current can be reduced, making it possible to significantly improve leakage current characteristics.
以上説明したように本発明は、スタンバイモード時に内
部回路に供給する電圧を積極的に低くする事により、欠
陥による軽度のリークや、チャンネル性リークに対して
、リーク電流を減少させる事が出来、スタンバイリーク
特性を大幅に改善する効果がある。As explained above, the present invention can reduce leakage current for mild leakage due to defects and channel leakage by actively lowering the voltage supplied to internal circuits during standby mode. It has the effect of significantly improving standby leak characteristics.
第1図は本発明の実施例を示すブロック図である。
1・・・電源端子、2・・・定電圧源、3・・・電源供
給回路、4・・・検出回路、5・・・外部割り込み端子
、10・・・内部回路6FIG. 1 is a block diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Power supply terminal, 2... Constant voltage source, 3... Power supply circuit, 4... Detection circuit, 5... External interrupt terminal, 10... Internal circuit 6
Claims (1)
イモードを検出する検出回路と、外部から供給される電
源電圧よりも低い電圧を発生する定電圧源と、前記検出
回路の信号により電源電圧と前記定電圧源とを切換えて
内部回路に供給する電源供給回路とを有し、通常状態で
は電源電圧側を、スタンバイモード時には前記定電圧源
側の電源を内部回路に供給する事を特徴とする半導体集
積回路。A detection circuit detects a standby mode in which the clock is stopped to reduce power consumption of the circuit, a constant voltage source generates a voltage lower than an externally supplied power supply voltage, and a signal from the detection circuit detects the power supply voltage and the constant voltage. A semiconductor integrated circuit comprising: a power supply circuit that switches between a voltage source and a power source to supply an internal circuit, and supplies the internal circuit with power from the power supply voltage side in a normal state and from the constant voltage source side in a standby mode. circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61210249A JPS6365714A (en) | 1986-09-05 | 1986-09-05 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61210249A JPS6365714A (en) | 1986-09-05 | 1986-09-05 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6365714A true JPS6365714A (en) | 1988-03-24 |
Family
ID=16586249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61210249A Pending JPS6365714A (en) | 1986-09-05 | 1986-09-05 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6365714A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01286625A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Output buffer circuit and its driving method |
WO2003036722A1 (en) * | 2001-10-26 | 2003-05-01 | Fujitsu Limited | Semiconductor integrated circuit device, electronic device having the circuit device packaged therein, and power consumption reducing method |
US6617916B1 (en) | 2000-03-27 | 2003-09-09 | Oki Electric Industry Co., Ltd. | Semiconductor integrated circuit |
US8595518B2 (en) | 2010-03-15 | 2013-11-26 | Sharp Kabushiki Kaisha | Semiconductor integrated circuit and electronic information device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54148430A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Digital device |
JPS57142148A (en) * | 1981-02-25 | 1982-09-02 | Sharp Kk | Circuit for protecting battery drive type electronic device |
-
1986
- 1986-09-05 JP JP61210249A patent/JPS6365714A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54148430A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Digital device |
JPS57142148A (en) * | 1981-02-25 | 1982-09-02 | Sharp Kk | Circuit for protecting battery drive type electronic device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01286625A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Output buffer circuit and its driving method |
US6617916B1 (en) | 2000-03-27 | 2003-09-09 | Oki Electric Industry Co., Ltd. | Semiconductor integrated circuit |
WO2003036722A1 (en) * | 2001-10-26 | 2003-05-01 | Fujitsu Limited | Semiconductor integrated circuit device, electronic device having the circuit device packaged therein, and power consumption reducing method |
US7302598B2 (en) | 2001-10-26 | 2007-11-27 | Fujitsu Limited | Apparatus to reduce the internal frequency of an integrated circuit by detecting a drop in the voltage and frequency |
US7320079B2 (en) | 2001-10-26 | 2008-01-15 | Fujitsu Limited | Semiconductor integrated circuit device, an electronic apparatus including the device, and a power consumption reduction method |
US8595518B2 (en) | 2010-03-15 | 2013-11-26 | Sharp Kabushiki Kaisha | Semiconductor integrated circuit and electronic information device |
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