JPS6356710B2 - - Google Patents
Info
- Publication number
- JPS6356710B2 JPS6356710B2 JP14998981A JP14998981A JPS6356710B2 JP S6356710 B2 JPS6356710 B2 JP S6356710B2 JP 14998981 A JP14998981 A JP 14998981A JP 14998981 A JP14998981 A JP 14998981A JP S6356710 B2 JPS6356710 B2 JP S6356710B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- electron transit
- control
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000012535 impurity Substances 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 34
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 19
- 230000005533 two-dimensional electron gas Effects 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14998981A JPS5851574A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14998981A JPS5851574A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5851574A JPS5851574A (ja) | 1983-03-26 |
| JPS6356710B2 true JPS6356710B2 (ko) | 1988-11-09 |
Family
ID=15487026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14998981A Granted JPS5851574A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5851574A (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119671A (ja) * | 1982-01-09 | 1983-07-16 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
| JPS5955073A (ja) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | 半導体装置 |
| US4583105A (en) * | 1982-12-30 | 1986-04-15 | International Business Machines Corporation | Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
| JPS59222966A (ja) * | 1983-06-02 | 1984-12-14 | Sony Corp | 半導体装置 |
| JPS605570A (ja) * | 1983-06-09 | 1985-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6012774A (ja) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | 半導体素子の製造方法 |
| JPS60263475A (ja) * | 1984-06-12 | 1985-12-26 | Sony Corp | 半導体装置 |
| JPS613465A (ja) * | 1984-06-18 | 1986-01-09 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH0697668B2 (ja) * | 1984-08-17 | 1994-11-30 | ソニー株式会社 | 半導体装置 |
| JPS61176161A (ja) * | 1985-01-31 | 1986-08-07 | Nec Corp | ヘテロゲ−ト電界効果トランジスタ |
-
1981
- 1981-09-22 JP JP14998981A patent/JPS5851574A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5851574A (ja) | 1983-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0371776B2 (ko) | ||
| JPH03775B2 (ko) | ||
| JPH024140B2 (ko) | ||
| JPS6356710B2 (ko) | ||
| JPH0324782B2 (ko) | ||
| JP2679333B2 (ja) | ショットキー障壁接合ゲート型電界効果トランジスタ | |
| JPS59207667A (ja) | 半導体装置 | |
| JPS60134481A (ja) | 半導体装置 | |
| JPS5851575A (ja) | 半導体装置の製造方法 | |
| JPS61147577A (ja) | 相補型半導体装置 | |
| JPH0249465A (ja) | 化合物半導体装置、および素子分離帯の製造方法 | |
| JPS63161677A (ja) | 電界効果トランジスタ | |
| JPS6357946B2 (ko) | ||
| JP2655594B2 (ja) | 集積型半導体装置 | |
| JPS5831582A (ja) | 半導体集積回路装置 | |
| JPS58147130A (ja) | 半導体装置の製造方法 | |
| JPS59222966A (ja) | 半導体装置 | |
| JPH01125985A (ja) | 半導体装置 | |
| JPH0312770B2 (ko) | ||
| JPS60136380A (ja) | 半導体装置 | |
| JPS6354229B2 (ko) | ||
| JPS5896770A (ja) | 電界効果型トランジスタ | |
| JPS58162070A (ja) | 電界効果トランジスタ | |
| JPH03155169A (ja) | 半導体装置 | |
| JPH02330A (ja) | 電界効果トランジスタ |