JPS6355207B2 - - Google Patents

Info

Publication number
JPS6355207B2
JPS6355207B2 JP59027048A JP2704884A JPS6355207B2 JP S6355207 B2 JPS6355207 B2 JP S6355207B2 JP 59027048 A JP59027048 A JP 59027048A JP 2704884 A JP2704884 A JP 2704884A JP S6355207 B2 JPS6355207 B2 JP S6355207B2
Authority
JP
Japan
Prior art keywords
protective film
substrate
gap
diffusion
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59027048A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59161019A (ja
Inventor
Juichi Shimada
Susumu Hasegawa
Kazutoshi Saito
Kiichi Komatsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59027048A priority Critical patent/JPS59161019A/ja
Publication of JPS59161019A publication Critical patent/JPS59161019A/ja
Publication of JPS6355207B2 publication Critical patent/JPS6355207B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
JP59027048A 1984-02-17 1984-02-17 半導体装置の製造方法 Granted JPS59161019A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59027048A JPS59161019A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59027048A JPS59161019A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49004982A Division JPS5925396B2 (ja) 1974-01-07 1974-01-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59161019A JPS59161019A (ja) 1984-09-11
JPS6355207B2 true JPS6355207B2 (enrdf_load_stackoverflow) 1988-11-01

Family

ID=12210184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59027048A Granted JPS59161019A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59161019A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881486A (enrdf_load_stackoverflow) * 1972-02-02 1973-10-31

Also Published As

Publication number Publication date
JPS59161019A (ja) 1984-09-11

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