JPS6353709B2 - - Google Patents

Info

Publication number
JPS6353709B2
JPS6353709B2 JP56032087A JP3208781A JPS6353709B2 JP S6353709 B2 JPS6353709 B2 JP S6353709B2 JP 56032087 A JP56032087 A JP 56032087A JP 3208781 A JP3208781 A JP 3208781A JP S6353709 B2 JPS6353709 B2 JP S6353709B2
Authority
JP
Japan
Prior art keywords
layer
normally
type
semiconductor
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56032087A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57147283A (en
Inventor
Kazuo Nanbu
Hidetoshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56032087A priority Critical patent/JPS57147283A/ja
Publication of JPS57147283A publication Critical patent/JPS57147283A/ja
Publication of JPS6353709B2 publication Critical patent/JPS6353709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56032087A 1981-03-06 1981-03-06 Semiconductor device Granted JPS57147283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56032087A JPS57147283A (en) 1981-03-06 1981-03-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56032087A JPS57147283A (en) 1981-03-06 1981-03-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57147283A JPS57147283A (en) 1982-09-11
JPS6353709B2 true JPS6353709B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=12349091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56032087A Granted JPS57147283A (en) 1981-03-06 1981-03-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57147283A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194676A (ja) * 1987-10-06 1989-04-13 Nec Corp 半導体装置及びその製造方法
JP5494622B2 (ja) * 2011-11-17 2014-05-21 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
JPS57147283A (en) 1982-09-11

Similar Documents

Publication Publication Date Title
EP0283278B1 (en) Compound semiconductor device having nonalloyed ohmic contacts
US5373191A (en) Semiconductor device and method of producing the same
US4908325A (en) Method of making heterojunction transistors with wide band-gap stop etch layer
JPS6342864B2 (enrdf_load_stackoverflow)
US4740822A (en) Field effect device maintaining a high speed operation in a high voltage operation
JPS6353710B2 (enrdf_load_stackoverflow)
JPS634955B2 (enrdf_load_stackoverflow)
EP0244840B1 (en) Method of manufacturing mes fet
JP3177951B2 (ja) 電界効果トランジスタおよびその製造方法
US5336626A (en) Method of manufacturing a MESFET with an epitaxial void
JP2636840B2 (ja) 半導体デバイス
JPS5953714B2 (ja) 半導体装置
EP0602671B1 (en) Heterojunction field effect transistor having an improved transistor characteristic
JPS6353709B2 (enrdf_load_stackoverflow)
JPS6353711B2 (enrdf_load_stackoverflow)
JPS6354228B2 (enrdf_load_stackoverflow)
JPH06120258A (ja) 高電子移動度トランジスタ
US7208777B1 (en) Field-effect semiconductor device
KR940010557B1 (ko) 반도체장치
JPS6354230B2 (enrdf_load_stackoverflow)
GB2217108A (en) Semiconductor device etching using indium containing etch stop
JPH028450B2 (enrdf_load_stackoverflow)
JP3255973B2 (ja) 半導体装置
JP2894801B2 (ja) 半導体トランジスタおよびその製造方法
JP2695832B2 (ja) ヘテロ接合型電界効果トランジスタ