JPS6342137Y2 - - Google Patents
Info
- Publication number
- JPS6342137Y2 JPS6342137Y2 JP10605683U JP10605683U JPS6342137Y2 JP S6342137 Y2 JPS6342137 Y2 JP S6342137Y2 JP 10605683 U JP10605683 U JP 10605683U JP 10605683 U JP10605683 U JP 10605683U JP S6342137 Y2 JPS6342137 Y2 JP S6342137Y2
- Authority
- JP
- Japan
- Prior art keywords
- carrier gas
- gas
- source container
- source
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012159 carrier gas Substances 0.000 claims description 49
- 239000007789 gas Substances 0.000 claims description 30
- 239000012495 reaction gas Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 17
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 238000009795 derivation Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 235000015067 sauces Nutrition 0.000 description 11
- 238000002844 melting Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10605683U JPS6013971U (ja) | 1983-07-07 | 1983-07-07 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10605683U JPS6013971U (ja) | 1983-07-07 | 1983-07-07 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6013971U JPS6013971U (ja) | 1985-01-30 |
| JPS6342137Y2 true JPS6342137Y2 (enrdf_load_stackoverflow) | 1988-11-04 |
Family
ID=30248347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10605683U Granted JPS6013971U (ja) | 1983-07-07 | 1983-07-07 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6013971U (enrdf_load_stackoverflow) |
-
1983
- 1983-07-07 JP JP10605683U patent/JPS6013971U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6013971U (ja) | 1985-01-30 |
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