JPS6338268A - Manufacture of infrared ray detection element - Google Patents
Manufacture of infrared ray detection elementInfo
- Publication number
- JPS6338268A JPS6338268A JP61182257A JP18225786A JPS6338268A JP S6338268 A JPS6338268 A JP S6338268A JP 61182257 A JP61182257 A JP 61182257A JP 18225786 A JP18225786 A JP 18225786A JP S6338268 A JPS6338268 A JP S6338268A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- layer
- type
- cdte
- insulating protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000001514 detection method Methods 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004327 boric acid Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は、多層からなる水銀・カドミウム・テルル（
以後Ｈｇ＋−ｘＣｄｘ Ｔｅと記す）結晶の表面にＣｄ
ＴｅＮを形成し、選択的にＣｄＴｅＪａｔのエツチング
を行い、絶縁保護膜形成後にＮ層を形成し、高感度の均
一な赤外線検知素子を得ることを可能とする。[Detailed Description of the Invention] [Summary] The present invention is directed to a multilayer mercury, cadmium, tellurium (mercury, cadmium, tellurium)
Cd on the surface of the crystal (hereinafter referred to as Hg+-xCdx Te)
TeN is formed, CdTeJat is selectively etched, and an N layer is formed after forming an insulating protective film, thereby making it possible to obtain a highly sensitive and uniform infrared sensing element.
この発明は、赤外線検知素子の製造方法に係り、特に多
素子を形成するｌＩｇ、ｙｃｄＸＴｅ結晶からなる赤外
線検知素子の製造方法に関するものである。The present invention relates to a method for manufacturing an infrared sensing element, and more particularly to a method for manufacturing an infrared sensing element made of lIg, ycdXTe crystals forming multiple elements.
被測温体は、高温度になるに従って、波長の短い赤外線
を輻射する。室温に近い物体からの赤外線を観測するに
は、波長８〜１４μｍを高感度に検知することのできる
赤外線検知素子が必要とされている。この室温付近の温
度を高感度に検知する材料としてＨｇ１−ｙＣｄｙ Ｔ
ｅ結晶が用いられている。The object to be measured radiates infrared rays with a shorter wavelength as the temperature increases. In order to observe infrared rays from objects near room temperature, an infrared sensing element that can detect wavelengths of 8 to 14 μm with high sensitivity is required. Hg1-yCdy T is a material that can detect temperatures near room temperature with high sensitivity.
e crystal is used.
従来、赤外線検知素子は、第２図に示す工程によって製
作されていた。即ち、第２図（ａｌに示すように、カド
ミウム・テルル（ＣｄＴｅ）基板６に形成されたＰ−Ｆ
ｌｇ、−ｘＣｄｘＴｅ結晶１の表面に、Ｘ値の大きいＰ
−Ｈ）Ｂ、ヤＣｄ、 Ｔｅ結晶２を形成する。Ｘ値が大
きいと、ハンドギヤツブは大となり、このＰ−Ｈｇ、、
Ｃｄ。Conventionally, infrared sensing elements have been manufactured by the process shown in FIG. That is, as shown in FIG.
lg, -xCdxOn the surface of the Te crystal 1, P with a large X value
-H) B, Y, Cd, Te crystal 2 is formed. When the X value is large, the hand gear knob becomes large, and this P-Hg...
Cd.
Ｔｅ結晶２を形成することにより、後述するＰＮ接合の
表面リーク電流を減らすことができる。By forming the Te crystal 2, surface leakage current of the PN junction, which will be described later, can be reduced.
次に、第２図伽）に示すように、Ｐ−”ｇ＋−ｙＣｄｙ
Ｔｅ結晶２の表面を薄層にするために、薄層化工・ノ
チングを行う。次いで、Ｐ−１（ｇ、うＣｄｘＴｅ粘晶
１のＮ ｌｆｉ形成予定領域を除いた領域に、絶縁保護
膜３となる硫化亜鉛（以後ＺｎＳと記す）を形成して、
この７．ｎＳ １１９をマスクとして、硼素Ｂのに１子
をイオン注入して■層４を形成する。第２図（Ｃ１の状
態である。Next, as shown in Figure 2), P−”g+−yCdy
In order to make the surface of the Te crystal 2 a thin layer, thin layer processing and notching are performed. Next, zinc sulfide (hereinafter referred to as ZnS), which will become the insulating protective film 3, is formed in the region of the CdxTe viscous crystal 1 excluding the region where Nlfi is planned to be formed.
This 7. Using nS 119 as a mask, ions of boron B are ion-implanted to form layer 4. Fig. 2 (state of C1).
これに、電極を形成して赤外線検知素子を形成する。Electrodes are formed on this to form an infrared sensing element.
ト記した従来の赤外線検知素子の製造方法は、’Ｈｇ＋
−ｙＣｄｙ Ｔｅ結晶をエツチングする際に、このＰ−
１１Ｌ−ｙＣｄｙ Ｔｅ結晶の厚さを１．０ ±０．１
μｍに均一番こ制御することが困難であり、形成さ
れるＮ層のＩ’Ｎ接合部が均−深さにならず、検知感度
を不均一にすると共に、局所的にｐ−Ｉｎ、−ｘＣｄ、
Ｔｅ結晶が表面ｔこ露出すると、’４ｇ＋−ｘｃｄｙ
Ｔｅ結晶のバンドギヤ・ノブが小さいために、表面の
リーク電流が多くなるという問題があった。The conventional method of manufacturing the infrared sensing element described above is 'Hg+
-yCdy When etching Te crystal, this P-
11L-yCdy Te crystal thickness 1.0 ±0.1
It is difficult to control the thickness uniformly to μm, and the I'N junction of the formed N layer does not have a uniform depth, making the detection sensitivity uneven and locally p-In, - xCd,
When the surface of the Te crystal is exposed, '4g+-xcdy
Since the band gear knob of the Te crystal is small, there is a problem in that the surface leakage current increases.
この発明は、以上のような従来の状況から、リーク電流
が少なく高感度で感度偏差のない赤外線検知素子の製造
方法の提供を目的とするものである。SUMMARY OF THE INVENTION In view of the above-mentioned conventional situation, it is an object of the present invention to provide a method for manufacturing an infrared sensing element that has low leakage current, high sensitivity, and no sensitivity deviation.
この発明では、Ｐ−Ｈｇ、−ｘＣｄｘＴｅ結晶の表面に
、Ｘ値の大きいＰ−）１ｇ、−、Ｃｄｙ Ｔｅ結晶とＣ
ｄＴｅ１ｉとを多重に積層し、ＣｄＴｅ層を選択上・ノ
チングして除去し、絶縁保護膜を形成した後に、１４圏
を形成する。In this invention, on the surface of the P-Hg, -xCdxTe crystal, P-)1g, -, Cdy Te crystal with a large X value and C
dTe1i are laminated in multiple layers, the CdTe layer is selectively removed by notching, and an insulating protective film is formed, after which 14 circles are formed.
ＣｄＴｅ１ｉｉは選択的にエツチングされ、Ｐ−Ｈｇ＋
−ｙＣｄｙＴｅＣｄＴｅ１ｉた状態を保つので、均一厚
みとなり、その表面に絶縁保護層が形成され、リーク電
流の少ない均一な高感度の赤外線検知素子となる。CdTe1ii is selectively etched and P-Hg+
Since the -yCdyTeCdTe1i state is maintained, the thickness becomes uniform, and an insulating protective layer is formed on the surface, resulting in a uniform high-sensitivity infrared sensing element with low leakage current.
第１図は本発明の赤外線検知素子の製造方法を説明する
ための要部工程図であり、第１図（ａｌに示すように、
ＣｄＴｅ結晶からなる基板６の上に、Ｐ−１１゜、、Ｃ
ｄ、 Ｔｅ結晶１を形成する。このＰ−１１ｇ＋−ｙ＋
Ｃｄｙ Ｔｅ結晶１の表面にｐ−１ｇ、−、ｃａ、 Ｔ
ｅ結晶２を形成する。このＰ−１１１−ｙＣｄｙ Ｔｅ
結晶２はその厚さが１．０±０．１ ｔｔｍになるよう
に成伎される。しかる後に、Ｃｄ Ｔ ｅ １ｉｆｔ５
を形成する。FIG. 1 is a process diagram of the main parts for explaining the manufacturing method of the infrared sensing element of the present invention, and as shown in FIG. 1 (al),
On the substrate 6 made of CdTe crystal, P-11°, C
d. Forming Te crystal 1. This P-11g+-y+
p-1g, -, ca, T on the surface of CdyTe crystal 1
Form e-crystal 2. This P-111-yCdy Te
The crystal 2 is formed to have a thickness of 1.0±0.1 ttm. After that, Cd T e 1ift5
form.
このＣｄＴｅ１Ｗ５のみをエツチングし、Ｐ−１１１！
＋−ｙＣｄｙＴｅ結晶２のエツチングを行わない選択上
・ノチングを行う。例えばエツチング液として、弗酸（
ＩＩＦ）。Etching only this CdTe1W5, P-111!
+-yCdyTe crystal 2 is selectively notched without being etched. For example, as an etching solution, hydrofluoric acid (
IIF).
硝酸（ＨＮＯａ ）、酢酸（Ｃｌ１ａ Ｃ００Ｈ）、水
を３．５，６．６の重量比としたものを用いる。Nitric acid (HNOa), acetic acid (Cl1a C00H), and water in a weight ratio of 3.5 and 6.6 are used.
エツチングされた結果、第１図［１１）に示す均一厚さ
のｐ−Ｈｇ、−、Ｃｄ、 Ｔｅ結晶２が得られる。As a result of etching, a p-Hg, -, Cd, Te crystal 2 having a uniform thickness as shown in FIG. 1 [11] is obtained.
この表面に絶縁保護膜３をＮ層形成予定領域を除いた領
域に形成する。この絶縁保護膜３をマスクとして硼酸Ｂ
の原子をイオン注入してＮＩＷ４を形成する。此れに電
極形成を行って赤外線検知素子を製作する。An insulating protective film 3 is formed on this surface except for the area where the N layer is to be formed. Using this insulating protective film 3 as a mask, boric acid B
Atoms are ion-implanted to form NIW4. Electrodes are formed on this to produce an infrared sensing element.
以上の説明から明らかなように、この発明によれば、Ｐ
Ｎ接合部が均−深さで作成されると共に、結晶表面１７
！（Ｈｇ＋□ＣｄｙＴｅ結晶）のバンドギャップが光電
変換層（Ｉｌｇ 、−ｘｃｄｘＴｅ結晶）のバンドギャ
ップより大きく、表面リークが均一で小さなものとなり
、高品質の赤外線検知素子を製造する上で極めて有効な
効果を発揮する。As is clear from the above description, according to the present invention, P
N junctions are created with uniform depth and the crystal surface 17
! The bandgap of the (Hg+□CdyTe crystal) is larger than the bandgap of the photoelectric conversion layer (Ilg, -xcdxTe crystal), and surface leakage is uniform and small, which is an extremely effective effect in manufacturing high-quality infrared sensing elements. demonstrate.
第１図は本発明の赤外線検知素子の製造方法を説明する
ための要部工程図、
第２図は従来の赤外線検知素子の製造方法を説明するた
めの要部工程図である。
図において、１はＰ−Ｈｇ＋−ｘＣｄｘ Ｔｅ結晶、２
はＰ−Ｈｇ、、Ｃｄ、 Ｔｅ結晶、３は絶縁保護膜、４
はＮＮ、５はＣｄＴｅ層を示す。
５ＣとＡ
＃部工社の
第１図
才■ｄか７印裳涜史欠ワ事Ｊめ唱凌３）ｋを訝θ月ｔ）
ルｂの零部工社Ｕ
第２図FIG. 1 is a process diagram of essential parts for explaining the method of manufacturing an infrared sensing element of the present invention, and FIG. 2 is a process diagram of essential parts for explaining a conventional method of manufacturing an infrared sensing element. In the figure, 1 is P-Hg+-xCdx Te crystal, 2
are P-Hg, Cd, Te crystals, 3 is an insulating protective film, 4
indicates NN, and 5 indicates CdTe layer. 5C and A
Leb's Reibe Kosha U Figure 2
Claims (1)
ｅ結晶（１）の表面にｘ値の大きいＨｇ＿１＿−＿ｙＣ
ｄ＿ｙＴｅ結晶（２）を形成し、該Ｈｇ＿１＿−＿ｙＣ
ｄ＿ｙＴｅ結晶（２）の表面にカドミウム・テルルＣｄ
Ｔｅ層（５）を形成したる後に、該ＣｄＴｅ層（５）の
みを選択エッチングにより除去し、所定パターンの絶縁
保護膜（３）を前記Ｈｇ＿１＿−＿ｙＣｄ＿ｙＴｅ結晶
（２）の表面に形成したる後に、該絶縁保護膜（３）を
マスクとしてＮ層を形成することを特徴とする赤外線検
知素子の製造方法。Mercury, cadmium, tellurium Hg_1_-_xCd_xT
eHg_1_-_yC with large x value on the surface of crystal (1)
d_yTe crystal (2) is formed, and the Hg_1_-_yC
Cadmium/tellurium Cd on the surface of d_yTe crystal (2)
After forming the Te layer (5), only the CdTe layer (5) is removed by selective etching, and an insulating protective film (3) with a predetermined pattern is formed on the surface of the Hg_1_-_yCd_yTe crystal (2). A method for manufacturing an infrared sensing element, characterized in that an N layer is formed using the insulating protective film (3) as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61182257A JPS6338268A (en) | 1986-08-01 | 1986-08-01 | Manufacture of infrared ray detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61182257A JPS6338268A (en) | 1986-08-01 | 1986-08-01 | Manufacture of infrared ray detection element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6338268A true JPS6338268A (en) | 1988-02-18 |
Family
ID=16115088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61182257A Pending JPS6338268A (en) | 1986-08-01 | 1986-08-01 | Manufacture of infrared ray detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6338268A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
| JPH0945953A (en) * | 1995-08-01 | 1997-02-14 | Nec Corp | Array infrared detector |
| US7112795B2 (en) | 2000-12-30 | 2006-09-26 | Dong Jin Semichem Co., Ltd. | Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer |
-
1986
- 1986-08-01 JP JP61182257A patent/JPS6338268A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
| JPH0945953A (en) * | 1995-08-01 | 1997-02-14 | Nec Corp | Array infrared detector |
| US7112795B2 (en) | 2000-12-30 | 2006-09-26 | Dong Jin Semichem Co., Ltd. | Method of controlling metallic layer etching process and regenerating etchant for metallic layer etching process based on near infrared spectrometer |
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