JPS6334793A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6334793A
JPS6334793A JP61178286A JP17828686A JPS6334793A JP S6334793 A JPS6334793 A JP S6334793A JP 61178286 A JP61178286 A JP 61178286A JP 17828686 A JP17828686 A JP 17828686A JP S6334793 A JPS6334793 A JP S6334793A
Authority
JP
Japan
Prior art keywords
sense amplifier
data output
load
rapid
trs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61178286A
Other languages
Japanese (ja)
Inventor
Yutaka Sumino
Original Assignee
Sumitomo Electric Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Ind Ltd filed Critical Sumitomo Electric Ind Ltd
Priority to JP61178286A priority Critical patent/JPS6334793A/en
Publication of JPS6334793A publication Critical patent/JPS6334793A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor storage device with high operating stability in addition to rapid operation by connecting plural load elements in a sense amplifier to different positions of the same data output line to constitute selective functions.
CONSTITUTION: The sense amplifier A is provided with plural load elements and a selected memory cell M selects the sense amplifier loads T9, T10 which are the nearest to the memory cell M itself so as to be driven. Namely, the voltage levels of data output buses S, S' are determined by the ratio of current driving capacity between input transistors (TRs) T1, T2 and load TRs T9, T10 in the sense amplifier A, the fluctuation of the voltage levels on the data output buses S, S' can be suppressed as less as possible by combining and operating respective adjacent elements even of the characteristics of respective elements are fluctuated by various factors. Even if the constants of the circuit are set up mainly based on the rapid operation, high operation stability can be obtained.
COPYRIGHT: (C)1988,JPO&Japio
JP61178286A 1986-07-29 1986-07-29 Semiconductor storage device Pending JPS6334793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61178286A JPS6334793A (en) 1986-07-29 1986-07-29 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61178286A JPS6334793A (en) 1986-07-29 1986-07-29 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6334793A true JPS6334793A (en) 1988-02-15

Family

ID=16045811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61178286A Pending JPS6334793A (en) 1986-07-29 1986-07-29 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6334793A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676580A (en) * 1992-07-09 1994-03-18 Nec Corp Semiconductor storage device
US5574696A (en) * 1993-11-02 1996-11-12 Murotani; Tatsunori Dynamic ram device having high read operation speed
JPH09180461A (en) * 1989-04-21 1997-07-11 Motorola Inc Memory in which loads are arranged on distribution data lines and load arrangement method
US6261638B1 (en) 1997-01-09 2001-07-17 University Of Cincinnati Method of preventing corrosion of metals using silanes
US6416869B1 (en) 1999-07-19 2002-07-09 University Of Cincinnati Silane coatings for bonding rubber to metals
US6955728B1 (en) 1999-07-19 2005-10-18 University Of Cincinnati Acyloxy silane treatments for metals
JP2006294208A (en) * 2005-04-08 2006-10-26 Hynix Semiconductor Inc Multi-port memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09180461A (en) * 1989-04-21 1997-07-11 Motorola Inc Memory in which loads are arranged on distribution data lines and load arrangement method
JPH0676580A (en) * 1992-07-09 1994-03-18 Nec Corp Semiconductor storage device
US5574696A (en) * 1993-11-02 1996-11-12 Murotani; Tatsunori Dynamic ram device having high read operation speed
US6261638B1 (en) 1997-01-09 2001-07-17 University Of Cincinnati Method of preventing corrosion of metals using silanes
US6416869B1 (en) 1999-07-19 2002-07-09 University Of Cincinnati Silane coatings for bonding rubber to metals
US6756079B2 (en) 1999-07-19 2004-06-29 The University Of Cincinnati Silane coatings for bonding rubber to metals
US6919469B2 (en) 1999-07-19 2005-07-19 The University Of Cincinnati Silane coatings for bonding rubber to metals
US6955728B1 (en) 1999-07-19 2005-10-18 University Of Cincinnati Acyloxy silane treatments for metals
JP2006294208A (en) * 2005-04-08 2006-10-26 Hynix Semiconductor Inc Multi-port memory device

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