JPS633302B2 - - Google Patents
Info
- Publication number
- JPS633302B2 JPS633302B2 JP19457983A JP19457983A JPS633302B2 JP S633302 B2 JPS633302 B2 JP S633302B2 JP 19457983 A JP19457983 A JP 19457983A JP 19457983 A JP19457983 A JP 19457983A JP S633302 B2 JPS633302 B2 JP S633302B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- mask
- pattern
- photomask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194579A JPS6086545A (ja) | 1983-10-17 | 1983-10-17 | マスク保護膜 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194579A JPS6086545A (ja) | 1983-10-17 | 1983-10-17 | マスク保護膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6086545A JPS6086545A (ja) | 1985-05-16 |
JPS633302B2 true JPS633302B2 (ko) | 1988-01-22 |
Family
ID=16326886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58194579A Granted JPS6086545A (ja) | 1983-10-17 | 1983-10-17 | マスク保護膜 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6086545A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0421303U (ko) * | 1990-06-14 | 1992-02-24 | ||
US10388427B2 (en) | 2016-09-20 | 2019-08-20 | Furukawa Electric Co., Ltd. | Flat cable, method for manufacturing the same, and rotatable connector device including the same |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139547A (ja) * | 1985-12-13 | 1987-06-23 | Daicel Chem Ind Ltd | 帯電防止性を有する感光積層体 |
JPS6446738A (en) * | 1987-08-17 | 1989-02-21 | Fuaintetsuku Kenkyusho Kk | Antistatic photosensitive laminated film |
CA1315023C (en) * | 1987-09-30 | 1993-03-23 | Kenji Ohta | Photo-mask |
US5079113A (en) * | 1988-09-29 | 1992-01-07 | Sharp Kabushiki Kaisha | Photo-mask |
US5260150A (en) * | 1987-09-30 | 1993-11-09 | Sharp Kabushiki Kaisha | Photo-mask with light shielding film buried in substrate |
JP2558304B2 (ja) * | 1987-12-28 | 1996-11-27 | 大日本印刷株式会社 | 製版用ガラスパターン |
US5178976A (en) * | 1990-09-10 | 1993-01-12 | General Electric Company | Technique for preparing a photo-mask for imaging three-dimensional objects |
GB2301050B (en) * | 1995-05-12 | 1999-06-23 | Kimoto Company Limited | Masking films |
JP4197378B2 (ja) * | 1999-08-18 | 2008-12-17 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法 |
-
1983
- 1983-10-17 JP JP58194579A patent/JPS6086545A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0421303U (ko) * | 1990-06-14 | 1992-02-24 | ||
US10388427B2 (en) | 2016-09-20 | 2019-08-20 | Furukawa Electric Co., Ltd. | Flat cable, method for manufacturing the same, and rotatable connector device including the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6086545A (ja) | 1985-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI270746B (en) | Anti-ESD photomask blank | |
US5989754A (en) | Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD) | |
US4600686A (en) | Method of forming a resist mask resistant to plasma etching | |
JPS633302B2 (ko) | ||
US5079113A (en) | Photo-mask | |
US4537813A (en) | Photomask encapsulation | |
US6153361A (en) | Method of removing photoresist at the edge of wafers | |
US20030031934A1 (en) | Electrostatic damage (ESD) protected photomask | |
US4556608A (en) | Photomask blank and photomask | |
JP3342693B2 (ja) | Esd保護機能を有するフォトマスク | |
JPS5851412B2 (ja) | 半導体装置の微細加工方法 | |
US6569576B1 (en) | Reticle cover for preventing ESD damage | |
EP0049799B1 (en) | Photomask blank and photomask | |
US6893780B1 (en) | Photomask and method for reducing electrostatic discharge on the same with an ESD protection pattern | |
JP2863131B2 (ja) | フォトマスクブランクスの製造方法 | |
JPH05100410A (ja) | レチクル | |
JP2003121989A (ja) | ハーフトーン型位相シフトマスクの修正方法 | |
EP0310412B1 (en) | Improvements in photo-masks | |
JPH032756A (ja) | フォトマスクブランク及びフォトマスク | |
JP5836805B2 (ja) | 静電気放電保護構造を有するフォトリソグラフィレクチル | |
JP2500526B2 (ja) | フォトマスクブランクおよびフォトマスク | |
JP2000131823A (ja) | 半導体レチクル・マスク | |
JPS6159506B2 (ko) | ||
KR200208744Y1 (ko) | 펠리클이 필요 없는 레티클 | |
JPS6148706B2 (ko) |