JPS63318125A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS63318125A
JPS63318125A JP15398187A JP15398187A JPS63318125A JP S63318125 A JPS63318125 A JP S63318125A JP 15398187 A JP15398187 A JP 15398187A JP 15398187 A JP15398187 A JP 15398187A JP S63318125 A JPS63318125 A JP S63318125A
Authority
JP
Japan
Prior art keywords
regions
oxide film
surface
ion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15398187A
Other versions
JPH0815215B2 (en
Inventor
Hidema Eifuku
Kenichi Hizuya
Yoshimi Shiotani
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15398187A priority Critical patent/JPH0815215B2/en
Publication of JPS63318125A publication Critical patent/JPS63318125A/en
Publication of JPH0815215B2 publication Critical patent/JPH0815215B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To improve the performance of transistors by ion-implanting boron difluoride into a silicon substrate through a thermal oxide film, and activating the ion implantation regions by heating them with light exposure, thereby forming P-type regions.
CONSTITUTION: With a resist pattern 6 and a field oxide film 2 as a mask, boron difluoride is selectively ion-implanted through a gate oxide film 5 into the substrate 1 surface in a region where an element is to be formed. After removing the pattern 6, the oxide film on the implantation regions 108, 109 is removed to expose the upper surface of the regions 108, 109. The regions 108, 109 are heated and activated by a lamp anneal method, thereby forming a shallow P+ type source region 8 and a P+ type drain region 9. Whereupon, the surface level due to fluorine ions greatly reduces, so that the surface leakage at the source-drain junction greatly reduces. With this, the improvement of the performance of transistors is accomplished.
COPYRIGHT: (C)1988,JPO&Japio
JP15398187A 1987-06-19 1987-06-19 A method of manufacturing a semiconductor device Expired - Fee Related JPH0815215B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15398187A JPH0815215B2 (en) 1987-06-19 1987-06-19 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15398187A JPH0815215B2 (en) 1987-06-19 1987-06-19 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS63318125A true JPS63318125A (en) 1988-12-27
JPH0815215B2 JPH0815215B2 (en) 1996-02-14

Family

ID=15574302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15398187A Expired - Fee Related JPH0815215B2 (en) 1987-06-19 1987-06-19 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JPH0815215B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
KR101006505B1 (en) 2003-07-11 2011-01-07 매그나칩 반도체 유한회사 Method of manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
KR101006505B1 (en) 2003-07-11 2011-01-07 매그나칩 반도체 유한회사 Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0815215B2 (en) 1996-02-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees