JPS63303900A - Method for controlling conduction type of silicon carbide single crystal - Google Patents

Method for controlling conduction type of silicon carbide single crystal

Info

Publication number
JPS63303900A
JPS63303900A JP13538187A JP13538187A JPS63303900A JP S63303900 A JPS63303900 A JP S63303900A JP 13538187 A JP13538187 A JP 13538187A JP 13538187 A JP13538187 A JP 13538187A JP S63303900 A JPS63303900 A JP S63303900A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
sic
impurities
single crystal
type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13538187A
Inventor
Yoshihisa Fujii
Masaki Furukawa
Akitsugu Hatano
Kenji Nakanishi
Mitsuhiro Shigeta
Akira Suzuki
Atsuko Uemoto
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To control the conduction type of an SiC single crystal with relatively low-temp. treatment by depositing the Si added with a group V element, etc., as impurities on an n- or p-type SiC single crystal, and heat-treating the material to diffuse the impurities into the SiC.
CONSTITUTION: In the production of a field-effect transistor, n-type β-SiC 2 and p-type β-SiC 3 are successively formed on an Si substrate 1 by a CVD method to form a thin Si film 4 contg. P at its source and drain parts as impurities. The material is then heat-treated at about 900W1,300°C in a gaseous Ar atmosphere to diffuse the impurities, and thermally oxidized at about 1,000W1,200°C in a dry gaseous oxygen atmosphere to form an oxide film 5 of about 200W1,500Å thickness. Then, the oxide film 5 on the electrode forming parts of the source and drain are removed by a liq. mixture of hydrofluoric acid and ammonium fluoride, and then Al is vacuum-deposited to form the electrodes 6 of the source, gate, and drain. By this method, the impurities can be easily diffused into SiC, and the conduction type of SiC is controlled.
COPYRIGHT: (C)1988,JPO&Japio
JP13538187A 1987-05-30 1987-05-30 Method for controlling conduction type of silicon carbide single crystal Granted JPS63303900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13538187A JPS63303900A (en) 1987-05-30 1987-05-30 Method for controlling conduction type of silicon carbide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13538187A JPS63303900A (en) 1987-05-30 1987-05-30 Method for controlling conduction type of silicon carbide single crystal

Publications (1)

Publication Number Publication Date
JPS63303900A true true JPS63303900A (en) 1988-12-12

Family

ID=15150377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13538187A Granted JPS63303900A (en) 1987-05-30 1987-05-30 Method for controlling conduction type of silicon carbide single crystal

Country Status (1)

Country Link
JP (1) JPS63303900A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170231A (en) * 1990-05-24 1992-12-08 Sharp Kabushiki Kaisha Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
US5170231A (en) * 1990-05-24 1992-12-08 Sharp Kabushiki Kaisha Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current

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