JPS63300563A - Ｍｏｓ電界効果トランジスタの製造方法 - Google Patents
Ｍｏｓ電界効果トランジスタの製造方法Info
- Publication number
- JPS63300563A JPS63300563A JP13722687A JP13722687A JPS63300563A JP S63300563 A JPS63300563 A JP S63300563A JP 13722687 A JP13722687 A JP 13722687A JP 13722687 A JP13722687 A JP 13722687A JP S63300563 A JPS63300563 A JP S63300563A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- region
- insulating film
- photoresist layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 238000007772 electroless plating Methods 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000003999 initiator Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910001096 P alloy Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13722687A JPS63300563A (ja) | 1987-05-29 | 1987-05-29 | Ｍｏｓ電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13722687A JPS63300563A (ja) | 1987-05-29 | 1987-05-29 | Ｍｏｓ電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63300563A true JPS63300563A (ja) | 1988-12-07 |
| JPH0561776B2 JPH0561776B2 (enrdf_load_stackoverflow) | 1993-09-07 |
Family
ID=15193728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13722687A Granted JPS63300563A (ja) | 1987-05-29 | 1987-05-29 | Ｍｏｓ電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63300563A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216156A (ja) * | 1993-01-18 | 1994-08-05 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置とその作製方法 |
| JP2000004025A (ja) * | 1999-06-02 | 2000-01-07 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置とその作製方法 |
| KR100317642B1 (ko) * | 1999-05-27 | 2001-12-22 | 구본준, 론 위라하디락사 | 금속 도금을 이용한 박막트랜지스터의 제조방법 |
| US6984551B2 (en) | 1993-01-18 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
-
1987
- 1987-05-29 JP JP13722687A patent/JPS63300563A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216156A (ja) * | 1993-01-18 | 1994-08-05 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置とその作製方法 |
| US6984551B2 (en) | 1993-01-18 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
| US7351624B2 (en) | 1993-01-18 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
| KR100317642B1 (ko) * | 1999-05-27 | 2001-12-22 | 구본준, 론 위라하디락사 | 금속 도금을 이용한 박막트랜지스터의 제조방법 |
| JP2000004025A (ja) * | 1999-06-02 | 2000-01-07 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置とその作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0561776B2 (enrdf_load_stackoverflow) | 1993-09-07 |
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