JPS6329405B2 - - Google Patents

Info

Publication number
JPS6329405B2
JPS6329405B2 JP8238779A JP8238779A JPS6329405B2 JP S6329405 B2 JPS6329405 B2 JP S6329405B2 JP 8238779 A JP8238779 A JP 8238779A JP 8238779 A JP8238779 A JP 8238779A JP S6329405 B2 JPS6329405 B2 JP S6329405B2
Authority
JP
Japan
Prior art keywords
gas
mounting table
epitaxial growth
reaction tube
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8238779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS566428A (en
Inventor
Nobuyuki Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP8238779A priority Critical patent/JPS566428A/ja
Publication of JPS566428A publication Critical patent/JPS566428A/ja
Publication of JPS6329405B2 publication Critical patent/JPS6329405B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP8238779A 1979-06-28 1979-06-28 Epitaxial growth apparatus Granted JPS566428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238779A JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238779A JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Publications (2)

Publication Number Publication Date
JPS566428A JPS566428A (en) 1981-01-23
JPS6329405B2 true JPS6329405B2 (enrdf_load_stackoverflow) 1988-06-14

Family

ID=13773163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238779A Granted JPS566428A (en) 1979-06-28 1979-06-28 Epitaxial growth apparatus

Country Status (1)

Country Link
JP (1) JPS566428A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223801U (enrdf_load_stackoverflow) * 1988-08-01 1990-02-16

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164928A3 (en) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Vertical hot wall cvd reactor
JPH07111958B2 (ja) * 1985-03-01 1995-11-29 株式会社日立製作所 半導体のエピタキシャル成長方法
JP2513179Y2 (ja) * 1986-10-09 1996-10-02 富士通株式会社 縦型ｃｖｄ装置
JPH0786174A (ja) * 1993-09-16 1995-03-31 Tokyo Electron Ltd 成膜装置
KR100536025B1 (ko) * 1998-10-13 2006-03-20 삼성전자주식회사 웨이퍼 보트
JP5213594B2 (ja) 2008-09-04 2013-06-19 東京エレクトロン株式会社 熱処理装置
JP5350747B2 (ja) 2008-10-23 2013-11-27 東京エレクトロン株式会社 熱処理装置
CN103160806B (zh) * 2011-12-14 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 进气系统、腔室装置和基片处理设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223801U (enrdf_load_stackoverflow) * 1988-08-01 1990-02-16

Also Published As

Publication number Publication date
JPS566428A (en) 1981-01-23

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