JPS63292408A - Magneto-resistance effect type magnetic head - Google Patents

Magneto-resistance effect type magnetic head

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Publication number
JPS63292408A
JPS63292408A JP12725287A JP12725287A JPS63292408A JP S63292408 A JPS63292408 A JP S63292408A JP 12725287 A JP12725287 A JP 12725287A JP 12725287 A JP12725287 A JP 12725287A JP S63292408 A JPS63292408 A JP S63292408A
Authority
JP
Japan
Prior art keywords
yokes
resistance effect
magneto
head
magnetic flux
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12725287A
Other languages
Japanese (ja)
Inventor
Hideto Sano
佐野 秀人
Shuzo Abiko
安彦 修三
Hiroichi Goto
博一 後藤
Hisanori Hayashi
林 久範
Takeshi Osato
毅 大里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Electronics Inc
Original Assignee
Canon Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Electronics Inc filed Critical Canon Electronics Inc
Priority to JP12725287A priority Critical patent/JPS63292408A/en
Publication of JPS63292408A publication Critical patent/JPS63292408A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the leakage of a magnetic flux of a signal magnetic field on the end face, and also, to improve the reproducing efficiency of a magnetic head by forming each of the opposed end faces of a pair of yokes so that parts being nearer a magneto-resistance effect element approach each other. CONSTITUTION:Each of end faces 4a, 5a of both opposed yokes 4, 5 on a magneto-resistance effect element 1 is formed on the inclined or curved surface so that parts being nearer the magnet-resistance effect element 1 approach each other. According to this structure, as for the end faces 4a, 5b of both the yokes 4, 5 opposed on the magneto-resistance effect element 1, a distance between each other becomes layer toward the upper part, its cap becomes larger and a magnetic flux comes to scarcely leak, the generation of a leakage magnetic flux flowing directly between the end faces 4a, 5a of both the yokes 4, 5 is suppressed, and the magnetic flux is applied concentrically to the magneto-resistance effect element 1.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は磁気抵抗効果型磁気ヘッド(以下MRヘッドと
略称する)に関し、特に磁気抵抗効果素子(以下MR″
X子と略称する)トにこのMR素子に信号磁界を印加す
るための一対のヨークが対向して設けられるいわゆるヨ
ーク型のMRヘッドに関するものである。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a magnetoresistive magnetic head (hereinafter abbreviated as MR head), and particularly relates to a magnetoresistive effect element (hereinafter referred to as MR head).
The present invention relates to a so-called yoke-type MR head in which a pair of yokes (abbreviated as X-element) are provided facing each other for applying a signal magnetic field to the MR element.

[従来の技術] この種のMRヘッドの従来構造の前にMR素子の動作原
理について第5図を用いて説明する。
[Prior Art] Before describing the conventional structure of this type of MR head, the operating principle of an MR element will be explained using FIG. 5.

第5図において符号1で示すものはMR素子であり、−
軸磁気異方性を与えられた帯状の強磁性体薄膜からなる
。MR素子lの磁気異方性をあらかじめMR素子lの帯
の長手方向に平行にしておき、MR素子1に定電流1を
信号電極2.2を介して流す、この時のMR素子1の磁
化の向きEAはMR素子1の長手方向に向き、電流方向
と平行になっている。
In FIG. 5, the symbol 1 is an MR element, -
It consists of a strip-shaped ferromagnetic thin film with axial magnetic anisotropy. The magnetic anisotropy of the MR element 1 is made parallel to the longitudinal direction of the band of the MR element 1 in advance, and a constant current 1 is caused to flow through the MR element 1 via the signal electrode 2.2.The magnetization of the MR element 1 at this time is The direction EA is oriented in the longitudinal direction of the MR element 1 and is parallel to the current direction.

この状態で外部磁界HsをMR3R3素子長手方向に直
角に印加すると、外部磁界Hsの強度によりMR素子1
の磁化の向きMが電流方向とある角度0を成すように変
化する。この時MR素子の抵抗値Rは、 R=Ro+ΔRmaxXcos20 の関係を保ちながら第6図に示すように変化する。第6
図に示す外部磁界HsとMR素子1の抵抗値Rの関係を
R−H特性という。
When an external magnetic field Hs is applied perpendicularly to the longitudinal direction of the MR3R3 element in this state, the strength of the external magnetic field Hs causes the MR element 1 to
The magnetization direction M changes so that it forms a certain angle 0 with the current direction. At this time, the resistance value R of the MR element changes as shown in FIG. 6 while maintaining the relationship R=Ro+ΔRmaxXcos20. 6th
The relationship between the external magnetic field Hs and the resistance value R of the MR element 1 shown in the figure is called the R-H characteristic.

従ってMR素子Iに定電流iを流しておけば、外部磁界
Hsの変化がMR素子lの抵抗の変化による電圧の変化
、即ち信号として信号電極2.2から取り出される。
Therefore, if a constant current i is caused to flow through the MR element I, a change in the external magnetic field Hs is taken out from the signal electrode 2.2 as a voltage change due to a change in the resistance of the MR element I, that is, as a signal.

次にこのような原理によるMRヘッドの従来構造を第3
図及び第4図に示して説明する。なお分り易くするため
に第3図は第4図中の絶縁層7〜9及び保護膜lOを取
り除いた状態で示しである。
Next, we will introduce the conventional structure of an MR head based on this principle in the third section.
This will be explained with reference to FIGS. For the sake of clarity, FIG. 3 is shown with the insulating layers 7 to 9 and the protective film IO in FIG. 4 removed.

第3図、第4図に示すように、磁性基板6上にMR素子
l、信号電極2,2、バイアス電極3、フロントヨーク
4及びテールヨーク5をそれぞれ薄膜のパターンとして
絶縁層7〜9を介し積層して薄膜堆積法により形成して
MRヘッドが構成される。そしてこれらの全体の上に保
w1膜10が設けられる。また符号11は磁気ギャップ
であり。
As shown in FIGS. 3 and 4, insulating layers 7 to 9 are formed on a magnetic substrate 6 by forming thin film patterns of an MR element 1, signal electrodes 2, 2, bias electrode 3, front yoke 4, and tail yoke 5, respectively. The MR head is constructed by laminating the layers through a thin film deposition method. A protective w1 film 10 is then provided over all of these. Further, reference numeral 11 is a magnetic gap.

12は絶縁層7に形成されたバックスルーホールである
12 is a back through hole formed in the insulating layer 7.

なおこの構造において信号電極2.2は前述のようにM
R素子lから信号を取り出すためのものである。又バイ
アス電極3はMR素子lにバイアス磁界を印加するため
のものである。又フロントヨーク4とテールヨーク5は
外部の信号磁界をMR素子lに印加するためのものであ
り、MR素子1上で互いに対向して設けられる。第4図
に示すようにMR素子l上で対向し合う両ヨーク4゜5
のそれぞれの端面4a、5aはMR素子1に対してほぼ
垂直な平面に形成されており、互いにほぼ平行に形成さ
れている。
Note that in this structure, the signal electrode 2.2 is M as described above.
This is for extracting a signal from the R element l. Further, the bias electrode 3 is for applying a bias magnetic field to the MR element 1. Further, the front yoke 4 and the tail yoke 5 are for applying an external signal magnetic field to the MR element 1, and are provided on the MR element 1 to face each other. As shown in Fig. 4, both yokes 4°5 facing each other on the MR element l.
The respective end faces 4a and 5a are formed on a plane substantially perpendicular to the MR element 1, and are formed substantially parallel to each other.

このような構造の下に信号の再生時には、バイアス′7
′rt、極3を介してMR素子1にバイアス磁界が印加
された状態で外部の信号磁界がフロントヨーク4から拾
われ、信号磁界の磁束が第4図に破線で示すようにヨー
ク4からMR素子l、テールヨーク5、磁性基板6とい
うように閉ループを形成して流れ、MR素子1に印加さ
れる。上述した動作原理により信号磁界の変化に応じて
MR素子lの抵抗が変化し、それが信号として信号電極
2.2から取り出される。
When reproducing signals under such a structure, bias '7
'rt, an external signal magnetic field is picked up from the front yoke 4 while a bias magnetic field is applied to the MR element 1 via the pole 3, and the magnetic flux of the signal magnetic field is transferred from the yoke 4 to the MR element as shown by the broken line in FIG. The signal flows through the element 1, the tail yoke 5, and the magnetic substrate 6 forming a closed loop, and is applied to the MR element 1. According to the above-described operating principle, the resistance of the MR element 1 changes in response to changes in the signal magnetic field, which is extracted as a signal from the signal electrode 2.2.

このようなヨークタイプのMRヘッドは他のシールドタ
イプやフロントタイプ等のMRヘッドに比較して、MR
素子が直接磁気記録媒体に接触しないため信頼性が高く
、腐食や摩耗に対する耐環境性は最も優れている。
This type of yoke type MR head has a higher MR head than other shield type or front type MR heads.
It is highly reliable because the element does not come into direct contact with the magnetic recording medium, and has the best environmental resistance against corrosion and wear.

[発明が解決しようとする問題点] ところが上に述べたような構造では、第4図に破線で示
すように、フロントヨークから拾われて流れる信号磁界
の磁束の一部がフロントヨーク4の端面4aのMR素子
lから離れた図中上部から漏れ、MR素子lに流れずに
そのままテールヨーク5へ直接に流れてしまう現象が発
生する。これによりMR素子lに信号磁界が集中しない
ためMRヘッドの再生効率が低下してしまう。
[Problems to be Solved by the Invention] However, in the structure described above, as shown by the broken line in FIG. A phenomenon occurs in which the liquid leaks from the upper part of the figure, which is away from the MR element 1 of 4a, and directly flows to the tail yoke 5 without flowing to the MR element 1. As a result, the signal magnetic field is not concentrated on the MR element 1, resulting in a reduction in the reproduction efficiency of the MR head.

これに対してMRヘッドの再生効率を向上させるには、
信号磁界の磁束の流れる磁路の磁気抵抗を小さくするこ
とが考えられ、そのためには両ヨーク4.5の対向する
端面4a、5aどうしを接近させる、又は両ヨーク4.
5の厚さを大きくする方法が考えられる。ところがこの
いずれの構造を採用したとしてもフロントヨーク4の端
面4aからテールヨーク5への磁気漏洩が促進されてし
まう。
On the other hand, in order to improve the reproduction efficiency of the MR head,
It is possible to reduce the magnetic resistance of the magnetic path through which the magnetic flux of the signal magnetic field flows, and for this purpose, the opposing end surfaces 4a and 5a of both yokes 4.5 may be brought closer to each other, or both yokes 4.5 may be brought closer to each other.
One possible method is to increase the thickness of 5. However, no matter which structure is adopted, magnetic leakage from the end surface 4a of the front yoke 4 to the tail yoke 5 will be promoted.

又、特に前者の構造ではMR素子l上に延びる両ヨーク
4.5の部分の長さが長くなり、MR素子lの有効な長
さが短くなってしまい、MR素子lの磁気抵抗変化率が
小さくなってしまう、いずれにしても再生効率を向上さ
せることはできない。
In addition, especially in the former structure, the length of the portion of both yokes 4.5 extending above the MR element l becomes long, the effective length of the MR element l becomes short, and the rate of change of magnetoresistance of the MR element l decreases. In any case, the regeneration efficiency cannot be improved.

[問題点を解決するための手段〕 このような問題点を解決するため本発明によれば、磁気
抵抗効果素子上に該素子に信号磁界を印加するための一
対のヨークが対向して設けられる磁気抵抗効果型磁気ヘ
ッドにおいて、前記一対のヨークの互いに対向し合う端
面のそれぞれを磁気抵抗効果素子に近い部分ほど互いに
接近するように傾斜ないし湾曲した面に形成した構造を
採用した。
[Means for Solving the Problems] In order to solve these problems, according to the present invention, a pair of yokes for applying a signal magnetic field to the magnetoresistive element are provided facing each other on the magnetoresistive element. In the magnetoresistive magnetic head, a structure is adopted in which the mutually opposing end surfaces of the pair of yokes are formed into inclined or curved surfaces such that the portions closer to the magnetoresistive element are closer to each other.

[作 用] このような構造によれば対向し合うヨークの端面どうし
において従来構造では信号磁界の磁束が漏れ易かったM
R素子から遠い部分ほど互いに離れギャップが大きくな
るので磁束が漏れにくくなる。信号磁界の磁束の大部分
がMR素子に集中して印加されるようになり、MRヘッ
ドの再生効率が向上する。
[Function] With this structure, the magnetic flux of the signal magnetic field easily leaks between the end faces of the opposing yokes in the conventional structure.
The farther the parts are from the R element, the more they are separated from each other and the gap becomes larger, making it difficult for magnetic flux to leak. Most of the magnetic flux of the signal magnetic field is concentratedly applied to the MR element, improving the reproduction efficiency of the MR head.

[実施例] 以下、本発明の実施例を詳細に説明する。[Example] Examples of the present invention will be described in detail below.

第1図及び第2図は本発明の実施例によるMRヘッドの
構造及び作用を説明する斜視図及び断面図である0両図
において従来例の第3図及び第4図中と共通もしくは相
当する部分には同一符号が付しである。なお第1図は従
来例の第3図と同様に絶縁層などを除いた状態で示しで
ある。
1 and 2 are perspective views and sectional views for explaining the structure and operation of the MR head according to the embodiment of the present invention. Both figures are common or equivalent to those in FIGS. 3 and 4 of the conventional example. Parts are given the same reference numerals. Note that FIG. 1 is shown with the insulating layer and the like removed, similar to FIG. 3 of the conventional example.

第1図及び第2図に示すように本実施例のMRヘッドの
基本的な構造は先述の従来例と同様である。即ち磁性基
板6上にMR素子l、信号電極2.2、バイアス電極3
、フロントヨーク4及びテールヨーク5をそれぞれ薄膜
のパターンとして絶縁層7〜9を介し積層して設けてM
Rヘッドが構成される。そして全体の上に保*n*io
が設けられる。以下に各部材の詳細をMRヘッドの製造
工程と共に説明する。
As shown in FIGS. 1 and 2, the basic structure of the MR head of this embodiment is the same as that of the prior art example described above. That is, an MR element 1, a signal electrode 2.2, and a bias electrode 3 are arranged on a magnetic substrate 6.
, the front yoke 4 and the tail yoke 5 are each provided as a thin film pattern and laminated with insulating layers 7 to 9 interposed therebetween.
R head is configured. And keep on the whole *n*io
is provided. The details of each member will be explained below along with the manufacturing process of the MR head.

まず磁性基板6はM n −Z nフェライト等から形
成される。製造工程ではまずこの磁性基板6上に絶縁W
+7が5i02あるいはA j2203などから薄膜堆
積法により数JLmの厚さで形成される。
First, the magnetic substrate 6 is formed from Mn-Zn ferrite or the like. In the manufacturing process, first an insulator W is placed on this magnetic substrate 6.
+7 is formed from 5i02 or Aj2203 to a thickness of several JLm by a thin film deposition method.

次に絶縁層7上にバイアス電極3がAJ、Cu等から薄
膜堆積法により形成され、エツチングにより図示のパタ
ーンに加工される。
Next, a bias electrode 3 is formed on the insulating layer 7 by a thin film deposition method using AJ, Cu, etc., and processed into the pattern shown in the figure by etching.

次にバイアス電極3を覆うようにして絶縁層8が絶縁層
7と同様の材料から形成される。
Next, an insulating layer 8 is formed from the same material as the insulating layer 7 so as to cover the bias electrode 3 .

次に絶縁層8上に信号電極2,2がAI、Cu等から形
成され、エツチングにより図示のパターンに加工される
Next, signal electrodes 2, 2 are formed of AI, Cu, etc. on the insulating layer 8, and processed into the illustrated pattern by etching.

次に絶縁層8上にMR素子1がNi−Fe等から数百A
の厚さの強磁性体薄膜として形成され。
Next, the MR element 1 is mounted on the insulating layer 8 by several hundred amperes of Ni-Fe or the like.
formed as a thin ferromagnetic film with a thickness of

ウェットエツチングあるいはイオンエツチング等により
図示の形状に形成される。MR素子lの両端は信号電極
2.2のそれぞれに接続される。
The shape shown in the figure is formed by wet etching or ion etching. Both ends of the MR element l are connected to each of the signal electrodes 2.2.

次にMR素子l上に絶縁層9が形成され、更に絶縁層7
.9をイオンエツチングすることにより磁気ギャップ1
1およびバックスルーホール12が形成される。
Next, an insulating layer 9 is formed on the MR element l, and an insulating layer 7 is formed on the MR element l.
.. By ion etching 9, the magnetic gap 1 is
1 and a back through hole 12 are formed.

続いてフロントヨーク4及びテールヨーク5がパーマロ
イやセンダストあるいはアモルファス等の強磁性体から
なる薄膜として形成される。フロントヨーク4は磁気ギ
ャップ11上から絶縁層9上でMR素子lトに臨むよう
に延びて形成される。
Next, the front yoke 4 and the tail yoke 5 are formed as thin films made of a ferromagnetic material such as permalloy, sendust, or amorphous. The front yoke 4 is formed to extend from above the magnetic gap 11 onto the insulating layer 9 so as to face the MR element.

又テールヨーク5は先端が絶縁層9上でMR素子l上に
臨み後端がバックスルーホール12を介して磁性基板6
に接触するように形成される0両ヨーク4.5はMR素
子1に対して数#Lmオーバーラツプするように設けら
れる。
The tip of the tail yoke 5 faces the MR element l on the insulating layer 9, and the rear end faces the magnetic substrate 6 via the back through hole 12.
The two yokes 4.5 formed so as to be in contact with the MR element 1 are provided so as to overlap by several #Lm with respect to the MR element 1.

そして更に上記の各パターンの上の全面を5t02やA
ff1203等からなる絶縁性の保護1410で覆って
MRヘッドが完成する。
Furthermore, the entire surface above each pattern above is 5t02 or A.
The MR head is completed by covering with an insulating protection 1410 made of ff1203 or the like.

ところで以上に述べた部分の構造は従来例と同様である
が、本実施例では従来例と異なる点として第2図に示す
ようにMR素子l上で対向する両ヨーク4,5の端面4
a、5aのそれぞれをMR素子lに近い部分程互に接近
するように傾斜した傾斜面に形成している0両端面4a
、5aのMR素子1に対する傾斜角度は例えば45°と
する。
By the way, the structure of the above-mentioned parts is the same as that of the conventional example, but in this example, the difference from the conventional example is that the end surfaces 4 of both yokes 4 and 5 facing each other on the MR element l are different from the conventional example as shown in FIG.
a, 5a are each formed into an inclined surface such that the portion closer to the MR element l approaches each other.
, 5a with respect to the MR element 1 is, for example, 45°.

又両端面4a、5aの傾斜は両ヨーク4,5をイオンエ
ツチング等で形成する際にエツチングを適当にコントロ
ールするなどして形成される。
Further, the inclinations of both end surfaces 4a and 5a are formed by appropriately controlling the etching when forming both yokes 4 and 5 by ion etching or the like.

このような構造によればMR素子l上で対向し合う両ヨ
ーク4.5の端面aa、saにおいて、従来構造では信
号磁界の磁束の漏れが発生し易すがったMR素子lから
離れたtjIJ2図中上部ほど互いの間の距離が大きく
なり、ギャップが大きくなり磁束が漏れにくくなる。こ
れにより第2図中でフロントヨーク4から拾われた信号
磁界の磁束の流れを破線で示すように1両ヨーク4,5
の端面4a、5a間を直接流れる漏れ磁束の発生が押え
られ、磁束はMR素子lに集中して印加される。
According to such a structure, on the end faces aa and sa of both yokes 4.5 facing each other on the MR element l, leakage of the magnetic flux of the signal magnetic field is likely to occur in the conventional structure, and the tjIJ2 diagram is located away from the MR element l. The distance between them increases toward the upper middle portion, and the gap becomes larger, making it difficult for magnetic flux to leak. As a result, the flow of the magnetic flux of the signal magnetic field picked up from the front yoke 4 in FIG.
The generation of leakage magnetic flux directly flowing between the end surfaces 4a and 5a is suppressed, and the magnetic flux is concentrated and applied to the MR element 1.

これによりMRヘッドの再生効率を従来より向とさせる
ことができる。
As a result, the reproduction efficiency of the MR head can be improved compared to the conventional one.

なお以との構成において両ヨーク4.5の端面4a、5
aの傾斜角度は45°に限定されないのは勿論であり、
要はMR素子lに近い部分ほど互いに接近するように傾
斜していればよい、又、両端面4a、5aはMR素子l
に近い部分ほど互いに接近する形状であれば湾曲面に形
成してもよい。
In addition, in the configuration described below, the end surfaces 4a, 5 of both yokes 4.5
Of course, the inclination angle of a is not limited to 45°,
In short, it is sufficient that the parts closer to the MR element l are inclined so that they approach each other, and both end surfaces 4a and 5a are closer to the MR element l.
It may be formed into a curved surface as long as the portions closer to each other are closer to each other.

[発明の効果] 以との説明から明らかなように、本発明によれば磁気抵
抗効果素子上に該素子に信号磁界を印加するための一対
のヨークが対向して設けられる磁気抵抗効果型磁気ヘッ
ドにおいて、前記一対のヨークの互いに対向し合う端面
のそれぞれを磁気抵抗効果素子に近い部分ほど互いに接
近するように傾斜ないし湾曲した面に形成した構造を採
用したので、上記端面における信号磁界の磁束の漏れを
押え、MRヘッドの再生効率を向上させるとかできると
いう優れた効果が得られる。
[Effects of the Invention] As is clear from the description below, according to the present invention, a magnetoresistive type magnetic field is provided, in which a pair of yokes for applying a signal magnetic field to a magnetoresistive element are provided facing each other on the magnetoresistive element. In the head, the mutually opposing end surfaces of the pair of yokes are formed into sloped or curved surfaces such that the portions closer to the magnetoresistive element approach each other, so that the magnetic flux of the signal magnetic field at the end surfaces is reduced. The excellent effects of suppressing the leakage and improving the reproduction efficiency of the MR head can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例によるMRヘッドの構造を説明
する要部の斜視図、第2図は同ヘッドの要部の断面図、
第3図は従来のMRヘッドの構造を説明する要部の斜視
図、第4図は同ヘッドの断面図、第5図はMR素子の動
作原理の説明図、第6図はR−H特性を示す線図である
。 1・・・MR素子    2・・・信号電極3・・・バ
イアス電極  4・・・フロントヨーク5・・・テール
ヨーク  6・・・磁性基板7〜9・・・絶縁層   
10・・・保護膜特許出願人 キャノン電子株式会社 々わkへ7F!’部の#ネ屹門 第30 MR#3の餉俣承罐IQ紋哨面 第5図 R楓 R−H特趨を丞1樟 第6図
FIG. 1 is a perspective view of the main parts of the MR head according to an embodiment of the present invention, and FIG. 2 is a sectional view of the main parts of the head.
Fig. 3 is a perspective view of the main parts explaining the structure of a conventional MR head, Fig. 4 is a sectional view of the head, Fig. 5 is an illustration of the operating principle of the MR element, and Fig. 6 is the R-H characteristic. FIG. 1... MR element 2... Signal electrode 3... Bias electrode 4... Front yoke 5... Tail yoke 6... Magnetic substrate 7-9... Insulating layer
10... Protective film patent applicant Canon Electronics Co., Ltd. 7F! 'Department's#Ne屹mon No. 30 MR #3's Kimimata Shokan IQ Montomen No. 5 R Kaede R-H special trend No. 1 Campan No. 6

Claims (1)

【特許請求の範囲】[Claims] 磁気抵抗効果素子上に該素子に信号磁界を印加するため
の一対のヨークが対向して設けられる磁気抵抗効果型磁
気ヘッドにおいて、前記一対のヨークの互いに対向し合
う端面のそれぞれを磁気抵抗効果素子に近い部分ほど互
いに接近するように傾斜ないし湾曲した面に形成したこ
とを特徴とする磁気抵抗効果型磁気ヘッド。
In a magnetoresistive magnetic head in which a pair of yokes for applying a signal magnetic field to the magnetoresistive element are provided facing each other, each end face of the pair of yokes facing each other is connected to the magnetoresistive element. 1. A magnetoresistive magnetic head, characterized in that it is formed with an inclined or curved surface such that portions closer to each other approach each other.
JP12725287A 1987-05-26 1987-05-26 Magneto-resistance effect type magnetic head Pending JPS63292408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12725287A JPS63292408A (en) 1987-05-26 1987-05-26 Magneto-resistance effect type magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12725287A JPS63292408A (en) 1987-05-26 1987-05-26 Magneto-resistance effect type magnetic head

Publications (1)

Publication Number Publication Date
JPS63292408A true JPS63292408A (en) 1988-11-29

Family

ID=14955451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12725287A Pending JPS63292408A (en) 1987-05-26 1987-05-26 Magneto-resistance effect type magnetic head

Country Status (1)

Country Link
JP (1) JPS63292408A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529413A (en) * 1975-07-11 1977-01-25 Matsushita Electric Ind Co Ltd Magnetic head
JPS5212814A (en) * 1975-07-17 1977-01-31 Philips Nv Thin film magnetic head

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529413A (en) * 1975-07-11 1977-01-25 Matsushita Electric Ind Co Ltd Magnetic head
JPS5212814A (en) * 1975-07-17 1977-01-31 Philips Nv Thin film magnetic head

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