JPS6325712B2 - - Google Patents

Info

Publication number
JPS6325712B2
JPS6325712B2 JP54162078A JP16207879A JPS6325712B2 JP S6325712 B2 JPS6325712 B2 JP S6325712B2 JP 54162078 A JP54162078 A JP 54162078A JP 16207879 A JP16207879 A JP 16207879A JP S6325712 B2 JPS6325712 B2 JP S6325712B2
Authority
JP
Japan
Prior art keywords
drain
source
transistor
semiconductor region
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54162078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5683963A (en
Inventor
Junji Sakurai
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16207879A priority Critical patent/JPS5683963A/ja
Priority to DE8080304496T priority patent/DE3067215D1/de
Priority to EP80304496A priority patent/EP0030856B1/en
Publication of JPS5683963A publication Critical patent/JPS5683963A/ja
Publication of JPS6325712B2 publication Critical patent/JPS6325712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP16207879A 1979-12-13 1979-12-13 Semiconductor memory element Granted JPS5683963A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16207879A JPS5683963A (en) 1979-12-13 1979-12-13 Semiconductor memory element
DE8080304496T DE3067215D1 (en) 1979-12-13 1980-12-12 Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
EP80304496A EP0030856B1 (en) 1979-12-13 1980-12-12 Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16207879A JPS5683963A (en) 1979-12-13 1979-12-13 Semiconductor memory element

Publications (2)

Publication Number Publication Date
JPS5683963A JPS5683963A (en) 1981-07-08
JPS6325712B2 true JPS6325712B2 (enrdf_load_stackoverflow) 1988-05-26

Family

ID=15747660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16207879A Granted JPS5683963A (en) 1979-12-13 1979-12-13 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS5683963A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893371A (ja) * 1981-11-30 1983-06-03 Nec Corp Ｍｏｓデバイス

Also Published As

Publication number Publication date
JPS5683963A (en) 1981-07-08

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