JPS63255367A - Production of thin film of oxide superconductor by sputtering and target for sputtering - Google Patents
Production of thin film of oxide superconductor by sputtering and target for sputteringInfo
- Publication number
- JPS63255367A JPS63255367A JP9019387A JP9019387A JPS63255367A JP S63255367 A JPS63255367 A JP S63255367A JP 9019387 A JP9019387 A JP 9019387A JP 9019387 A JP9019387 A JP 9019387A JP S63255367 A JPS63255367 A JP S63255367A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- sputtering
- target
- oxide superconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 239000002887 superconductor Substances 0.000 title claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000000470 constituent Substances 0.000 claims abstract description 9
- 238000005477 sputtering target Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 13
- 238000005245 sintering Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は銅系酸化物超電導体薄膜の製造に適用できるス
パッタ薄膜製造方法およびその製造に使用するスパッタ
リング用ターゲットに間する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing a sputter thin film that can be applied to producing a copper-based oxide superconductor thin film, and a sputtering target used in the production.
［従来の技術］
従来の酸化物超電導体のスパッタ薄膜は、複数の酸化物
粉末を混合し焼結して作製されたスパッタリング用ター
ゲットを用いて作製されていた。[Prior Art] A conventional sputtered thin film of an oxide superconductor has been produced using a sputtering target prepared by mixing and sintering a plurality of oxide powders.
第２図は従来のスパッタリング用ターゲットを用いて作
製したＳ ｒ Ｘ Ｌ ａ ２− ｘ Ｃｕ ０４１ｙ
ＲＩｌｌの組成と臨界温度との関係を示す図である。Figure 2 shows SrXLa2-xCu041y produced using a conventional sputtering target.
FIG. 3 is a diagram showing the relationship between the composition of RIll and the critical temperature.
臨界温度Ｔｃは最高で３５にである。The critical temperature Tc is at most 35.
［発明が解決しようとする問題点］
しかしながら、ターゲットは複数の金属酸化物粉末を混
合し焼結することによって作製されるために、ガラスの
ようにもろく、熱を加えると割れてしまうという問題点
があった。[Problems to be solved by the invention] However, since the target is manufactured by mixing and sintering multiple metal oxide powders, it is brittle like glass and breaks when heated. was there.
また、酸化物だけの混合であるために反応性が悪く、そ
のためスパッタリング用ターゲットの作製には高温で長
時間を要するという問題点があった。Further, since it is a mixture of only oxides, the reactivity is poor, and therefore, there is a problem in that it takes a long time at high temperature to prepare a sputtering target.
さらに、電気型導度も悪いのでこのターゲットに電場を
かけると極部的に放電が集中してしまい、この・ためス
パッタリングが不均一になり、よって作製される薄膜も
不均一となるという問題点があった。こうしてターゲッ
トが不均一にスパッタされるため、ターゲットが損傷し
たり、部分的に穴があいたり、谷や溝ができたりするた
め、作製される薄膜は増々不均一になる
このターゲットを用いて薄膜を作製する場合、酸化物か
ら酸素がぬけやすく、始めはこの酸素が多量に酸化物か
ら発生し、次第に少なくなるので薄膜作製中に酸素濃度
が変化する。この酸素濃度に関する制御はむずかしく、
作製布れた薄膜組成に再現性がないという問題点があっ
た。Furthermore, since the electrical type conductivity is poor, when an electric field is applied to this target, the discharge will be concentrated in localized areas, resulting in non-uniform sputtering and, therefore, the problem that the thin film produced will also be non-uniform. was there. In this way, the target is sputtered non-uniformly, resulting in damage to the target, partial holes, valleys and grooves, and the resulting thin film becomes increasingly non-uniform. When producing a thin film, oxygen is easily released from the oxide, and a large amount of oxygen is generated from the oxide at first, but gradually decreases, so the oxygen concentration changes during the production of the thin film. Controlling this oxygen concentration is difficult;
There was a problem in that the composition of the thin film produced was not reproducible.
また、酸化物だけで作製されたターゲットは、始めは導
電性であフても酸素が抜けるため次第に絶縁性となって
しまう。このため、始めは直流法によるスパッタリング
も可能であるが、次第に放電が不安定になってしまうと
いう問題点があった。Further, a target made only of oxides may be electrically conductive at first, but as oxygen escapes, it gradually becomes insulating. For this reason, sputtering using a direct current method is initially possible, but there is a problem in that the discharge gradually becomes unstable.
さらに、このターゲットを用いて作製された酸化物超電
導体薄膜は、薄膜特性が悪い、すなわち超電導性が良く
ないという問題点があった。Furthermore, the oxide superconductor thin film produced using this target has a problem in that the thin film properties are poor, that is, the superconductivity is not good.
本発明の目的は上述の問題点を解決し、超電導性、再現
性および膜質の良いスパッタ薄膜を製造する方法と、こ
の製造に使用するための高品質のスパッタリング用ター
ゲットを提供することにある。An object of the present invention is to solve the above-mentioned problems and provide a method for producing a sputtered thin film with good superconductivity, reproducibility, and film quality, and a high-quality sputtering target for use in this production.
［問題点を解決するための手段Ｊ
かかる目的を達成するために本発明は、酸素および銅と
共に複数種の構成元素を有する酸化物超電導体を製造す
る方法において、複数種の構成元素の酸化物粉末に銅の
粉末を混合し焼結したスパッタリング用ターゲットを用
いることを特徴とする。[Means for Solving the Problems J] In order to achieve the above object, the present invention provides a method for producing an oxide superconductor having a plurality of constituent elements together with oxygen and copper. It is characterized by using a sputtering target made by mixing powder with copper powder and sintering the mixture.
また、本発明のスパッタリング用ターゲットは酸素およ
び銅と共に複数種の構成元素を有する酸化物超電導体の
複数種の構成元素の酸化物粉末に銅の粉末を混合し焼結
したことを特徴とする。Further, the sputtering target of the present invention is characterized in that copper powder is mixed with oxide powder of a plurality of constituent elements of an oxide superconductor having a plurality of constituent elements together with oxygen and copper, and then sintered.
［作 用］
本発明においては、金属銅と酸化物とで作製されたスパ
ッタリング用ターゲットを用いてスパッタ薄膜を作製す
ることにより、再現性の良い薄膜を得ることができる。[Function] In the present invention, by producing a sputtered thin film using a sputtering target made of metallic copper and an oxide, a thin film with good reproducibility can be obtained.
また、スパッタリング用ターゲットは金属銅と酸化物と
で作製することにより、耐熱性、堅固性、熱伝導性およ
び電導性が良好である。Furthermore, since the sputtering target is made of metal copper and oxide, it has good heat resistance, solidity, thermal conductivity, and electrical conductivity.
［実施例］ 以下、図面を参照して本発明の詳細な説明する。[Example] Hereinafter, the present invention will be described in detail with reference to the drawings.
第１図は本発明によるスパッタリング用ターゲットを用
いて作製したＳｒ、Ｌａ２−ｘＣｏＯ３−、薄膜の組成
と臨界温度との関係を示す図である。臨界温度Ｔｃは最
高で４０Ｋを示す。測定値は安定している。FIG. 1 is a diagram showing the relationship between the composition and critical temperature of a Sr, La2-xCoO3-, thin film produced using a sputtering target according to the present invention. The critical temperature Tc shows a maximum of 40K. Measured values are stable.
この薄膜は、ＳｒＯ，ＬａＯおよびＣｕの粉末を焼結し
た焼結体をターゲットとして、アルゴンと酸素の混合ガ
ス中でスパッタして作製する。このときの酸素ガス分圧
は１０−’〜ＩＴｏｒｒ （最適圧力０．１Ｔｏｒｒ）
、基板温度は５００〜９００℃（最適温度７００℃）と
する。This thin film is produced by sputtering in a mixed gas of argon and oxygen using a sintered body of powders of SrO, LaO, and Cu as a target. The oxygen gas partial pressure at this time is 10-'~ITorr (optimal pressure 0.1Torr)
, the substrate temperature is 500 to 900°C (optimal temperature 700°C).
上述の５ｒｘＬａ２−１ｌｃｕｏ４−ｙの薄膜作製に用
いるスパッタリング用ターゲットは次のような手順で作
製される。ＳｒＯ，ＬａＯおよびＣｕのそれぞれを粉末
化して均一になるように混合する。この混合物を温度８
００℃、圧力３００気圧で３０分間ホットプレスして焼
結させる。The sputtering target used for producing the above-mentioned 5rxLa2-1lcuo4-y thin film is produced by the following procedure. Each of SrO, LaO and Cu is pulverized and mixed uniformly. This mixture was heated to a temperature of 8
Sintering is carried out by hot pressing at 00° C. and 300 atm pressure for 30 minutes.
以上、本実施例においては、５ｒＨＬａ２−Ｉｌｃｕ’
ｏ４−ｙのスパッタ薄膜の製造法およびこの薄膜の製造
に使用するスパッタリング用ターゲットについて説明し
たが、これに限られるものではない。組成式がＭ Ｘ
Ｌ ２− Ｘ Ｃｕ Ｏ４−１！で表わされ、Ｍが周期
表第１Ｉ Ａ族に属するＢｅからＢａまでの元素のうち
の１種または２種以上、Ｌが周期表第１ＩＩ Ａ族に属
するＳｃからＬｕまでの元素および周期表第１ＩＩ Ｂ
族に属するＢおよびＡＪ：ｌのうちの１種または２ｆ！
Ｉｌｉ以上であり組成範囲が０＜ｘ＜２および０＜ｙ＜
２であるスパッタ薄膜およびスパッタリング用ターゲッ
トについても同様に作製することができる。この場合、
反応の条件などは組成によって異なる。また、組成式が
Ｍ、Ｌｌ−。As mentioned above, in this example, 5rHLa2-Ilcu'
Although the method for producing an o4-y sputtered thin film and the sputtering target used for producing this thin film have been described, the present invention is not limited thereto. The composition formula is M
L2-XCuO4-1! , where M is one or more of the elements Be to Ba belonging to Group 1 IA of the periodic table, and L is the elements Sc to Lu belonging to Group 1 II A of the periodic table and the periodic table. 1II B
B and AJ belonging to the group: one of l or 2f!
Ili or more and the composition range is 0<x<2 and 0<y<
The sputter thin film and sputtering target No. 2 can also be produced in the same manner. in this case,
Reaction conditions etc. vary depending on the composition. Moreover, the composition formula is M, Ll-.
ＣａＯ２−、についてもＭ、Ｌ２−ｘＣ：ｕｏ４−ｙの
場合と同様である。このとき、組成範囲は０＜ｘ＜１お
よびｏ＜ｙ＜ｔ、５である。The same applies to CaO2- as in the case of M, L2-xC:uo4-y. At this time, the composition range is 0<x<1 and o<y<t, 5.
上述のスパッタリング用ターゲットは酸化物と金属銅と
で作製されたサーメット状なので、それぞれの優れた特
質を合わせ持っている。すなわち酸化物は耐熱性、堅固
性が良く、金属銅は熱伝導性、電導性が良い。The above-mentioned sputtering target has a cermet shape made of oxide and metallic copper, so it has the excellent properties of each. That is, oxides have good heat resistance and solidity, and metallic copper has good thermal conductivity and electrical conductivity.
また、金属銅粉末がバインダーとなるために、低温度、
短時間（従来の約ｌ／４）で破壊しにくいターゲットを
作製することができる。この−ターゲットはスパッタ薄
膜作製中でも酸素がぬけにくく、酸素濃度制御が容易で
あるために薄膜特性の再現性も良くなる。特に電導性が
あるために、直流法および高周波法スパッタの両方に使
用できる。In addition, since the metallic copper powder acts as a binder, low temperatures and
A target that is difficult to destroy can be produced in a short time (about 1/4 of the conventional method). Oxygen does not easily escape from this target even during sputtering thin film production, and the oxygen concentration can be easily controlled, so that the reproducibility of the thin film properties is improved. In particular, because of its electrical conductivity, it can be used for both direct current and high frequency sputtering.
［発明の効果］
以上説明したように、本発明によれば金属銅と酸化物と
で作製されたスパッタリング用ターゲットを用いてスパ
ッタ薄膜を作製するので、再現性の良い薄膜を得ること
ができる。また、スパッタリング用ターゲットは金属銅
と酸化物とで作製されるので、耐熱性、堅固性、熱伝導
性および電導性が良好である。[Effects of the Invention] As described above, according to the present invention, since a sputtered thin film is produced using a sputtering target made of metallic copper and an oxide, a thin film with good reproducibility can be obtained. Furthermore, since the sputtering target is made of metallic copper and oxide, it has good heat resistance, solidity, thermal conductivity, and electrical conductivity.
第１図は本発明実施例によるスパッタリング用ターゲッ
トを用いて作製した超電導体と臨界温度との関係を示す
図、
第２図は従来のスパッタリング用ターゲットを用いて作
製した超電導体と臨界温度との関係を示す図である。
指定代理人 工業技術院電子技術総合研究所長Ｓｒｘ
ＬＯ２−ＸＣｕ０４−ｙ
第１図FIG. 1 is a diagram showing the relationship between a superconductor manufactured using a sputtering target according to an embodiment of the present invention and its critical temperature, and FIG. 2 is a diagram showing the relationship between a superconductor manufactured using a conventional sputtering target and its critical temperature. It is a figure showing a relationship. Designated Agent Srx, Director of Electronic Technology Research Institute, Agency of Industrial Science and Technology
LO2-XCu04-y Figure 1
Claims (1)
物超電導体を製造する方法において、前記複数種の構成
元素の酸化物粉末に銅の粉末を混合し焼結したスパッタ
リング用ターゲットを用いることを特徴とする酸化物超
電導体のスパッタ薄膜製造方法。 ２）酸素および銅と共に複数種の構成元素を有する酸化
物超電導体の前記複数種の構成元素の酸化物粉末に銅の
粉末を混合し焼結したことを特徴とするスパッタリング
用ターゲット。[Claims] 1) A method for manufacturing an oxide superconductor having a plurality of constituent elements together with oxygen and copper, including sputtering in which copper powder is mixed with oxide powder of the plurality of constituent elements and sintered. A method for producing a sputter thin film of an oxide superconductor, the method comprising using a target for producing an oxide superconductor. 2) A sputtering target characterized in that copper powder is mixed with oxide powder of the plurality of constituent elements of an oxide superconductor having a plurality of constituent elements together with oxygen and copper and sintered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019387A JPS63255367A (en) | 1987-04-13 | 1987-04-13 | Production of thin film of oxide superconductor by sputtering and target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019387A JPS63255367A (en) | 1987-04-13 | 1987-04-13 | Production of thin film of oxide superconductor by sputtering and target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63255367A true JPS63255367A (en) | 1988-10-21 |
Family
ID=13991644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9019387A Pending JPS63255367A (en) | 1987-04-13 | 1987-04-13 | Production of thin film of oxide superconductor by sputtering and target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63255367A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989005283A1 (en) * | 1987-12-09 | 1989-06-15 | Mitsubishi Metal Corporation | Target material for forming superconductive film |
| JPH02157150A (en) * | 1988-12-07 | 1990-06-15 | Mitsubishi Metal Corp | Target material for forming superconducting film of bi-sr-ca-cu-o system |
| JPH02156079A (en) * | 1988-12-07 | 1990-06-15 | Mitsubishi Metal Corp | Target material for forming superconducting film of tl-ba-ca-cu-o system |
-
1987
- 1987-04-13 JP JP9019387A patent/JPS63255367A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989005283A1 (en) * | 1987-12-09 | 1989-06-15 | Mitsubishi Metal Corporation | Target material for forming superconductive film |
| US5049452A (en) * | 1987-12-09 | 1991-09-17 | Mitsubishi Metal Corporation | Target member used for formation of superconducting film |
| JPH02157150A (en) * | 1988-12-07 | 1990-06-15 | Mitsubishi Metal Corp | Target material for forming superconducting film of bi-sr-ca-cu-o system |
| JPH02156079A (en) * | 1988-12-07 | 1990-06-15 | Mitsubishi Metal Corp | Target material for forming superconducting film of tl-ba-ca-cu-o system |
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