JPS63239898A - Method of forming multilayer interconnection board - Google Patents
Method of forming multilayer interconnection boardInfo
- Publication number
- JPS63239898A JPS63239898A JP7148887A JP7148887A JPS63239898A JP S63239898 A JPS63239898 A JP S63239898A JP 7148887 A JP7148887 A JP 7148887A JP 7148887 A JP7148887 A JP 7148887A JP S63239898 A JPS63239898 A JP S63239898A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- film
- wiring
- layer
- multilayer wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 51
- 230000001603 reducing effect Effects 0.000 claims description 12
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 239000009719 polyimide resin Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- 230000002542 deteriorative effect Effects 0.000 description 4
- 238000013007 heat curing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006798 ring closing metathesis reaction Methods 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000005521 carbonamide group Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、配線用導体と絶縁性の耐熱性樹脂とにより基
板上に構成され、電子計算機のＬＳＩ実装に用いられる
薄膜多層配線基板の製造法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to the production of a thin film multilayer wiring board that is constructed on a board of a wiring conductor and an insulating heat-resistant resin and is used for LSI mounting of electronic computers. It is about law.
モジュール用の多層配線基板としで、Ｃｕとポリイミド
を用いた薄膜多層配線基板の適用が検討されている。こ
の基板では、配線構造として、特開昭５８−１１５８８
９の様に、Ｃｒ ／ Ｃｕ ／ Ｃｒの３層となってい
る。Application of a thin film multilayer wiring board using Cu and polyimide is being considered as a multilayer wiring board for modules. In this board, as a wiring structure,
9, it has three layers of Cr/Cu/Cr.
モジュール基板中の多層配線では、信号伝送速度の向上
を計るため、従来のＡＱ配線に代わって、低抵抗のＣｕ
配線を、絶縁膜も層間容量の低減を計るため、５ｉＯｚ
に代わりにポリイミドの適用が求められている。従来は
、Ｃｕとポリイミドは密着性が悪いことと、そしてＣｕ
上にポリイミド膜を形成すると相互反応により、ポリイ
ミドの耐熱性が劣化することを防止するため、従来の配
線構造はＣｕ配線の表裏にＣｒ膜がコーティングされた
、Ｃｒ ／ Ｃｕ ／ Ｃｒの３層としていた。しかし
この構造では、Ｃｒ膜の比抵抗が大きいため、配線特性
が低下することと、配線が３層となり、プロセスが複雑
になるという問題点があった。In multilayer wiring in module boards, low-resistance Cu is used instead of conventional AQ wiring to improve signal transmission speed.
In order to reduce interlayer capacitance for wiring and insulating film, 5iOz
The application of polyimide is required instead. Conventionally, Cu and polyimide had poor adhesion, and Cu
In order to prevent the heat resistance of polyimide from deteriorating due to mutual reactions when a polyimide film is formed on top, the conventional wiring structure is a triple layer of Cr / Cu / Cr, in which a Cr film is coated on the front and back of a Cu wiring. there was. However, this structure has problems in that the Cr film has a high resistivity, resulting in poor wiring characteristics and three layers of wiring, complicating the process.
本発明は、上記問題点を解決することを目的とし、Ｃｕ
配線の表裏面を他の金属薄膜でコーティングしない、Ｃ
ｕ ／ポリイミド薄膜多層配線基板を提供するものであ
る。The present invention aims to solve the above problems, and
Do not coat the front and back surfaces of the wiring with other metal thin films, C
The present invention provides a u/polyimide thin film multilayer wiring board.
上記目的は、ポリイミドの熱硬化を還元性雰囲気で行う
ことにより達成される。The above object is achieved by thermally curing the polyimide in a reducing atmosphere.
ポリイミドは、塗布されたポリイミドワニスが、まず１
５０〜２００℃の温度で、第１段階の脱水反応をおこし
、３００〜３５０℃の温度で第２段階の脱水反応をおこ
し、カルボンアミドが脱水閉環し、ポリイミド重合体と
なる。しかし、Ｃｕ薄膜上にポリイミドワニスを塗布し
、従来の技術である不活性雰囲気で熱硬化すると、混入
している微量の酸素によりＣｕ膜表面の酸化が進行し、
Ｃｕ／ｍリイミド界面に選択的に酸素が拡散してくる。For polyimide, the applied polyimide varnish is first
A first stage dehydration reaction takes place at a temperature of 50 to 200°C, and a second stage dehydration reaction takes place at a temperature of 300 to 350°C, and the carbonamide undergoes dehydration and ring closure to form a polyimide polymer. However, when polyimide varnish is applied on a Cu thin film and thermally cured in an inert atmosphere using conventional techniques, oxidation of the Cu film surface progresses due to the small amount of oxygen mixed in.
Oxygen selectively diffuses to the Cu/m-liimide interface.
このようにポリイミドの熱硬化過程で、過分に酸素が供
給されると、ポリイミドの分解反応が生じ、脱水閉環し
熱硬化する反応を抑制する形となる。この逆反応により
、ポリイミド重合体の重合反応が抑制されるため、熱硬
化したポリイミドの耐熱性は劣化する。そこで、熱硬化
過程で、過分な酸素による分解反応を防止するため、水
素を混入させ、Ｃｕ薄膜表面で還元反応を誘起し、水分
子として外部に拡散させるようにする。これにより、ポ
リイミドはＣｕとの反応による耐熱性の劣化を起こすの
を防止でき、また同時にＣｕとポリイミドの密着性も改
善できる。こうして、還元性雰囲気下で、ポリイミドの
熱硬化を行うことにより、Ｃｕ配線上に直接ポリイミド
膜を形成することができ、Ｃｕ配線の表裏面を他の金属
薄膜でコーティングする必要はなくなる。If too much oxygen is supplied during the heat curing process of polyimide as described above, a decomposition reaction of the polyimide occurs, which suppresses the reaction of dehydration, ring closure, and heat curing. This reverse reaction suppresses the polymerization reaction of the polyimide polymer, thereby deteriorating the heat resistance of the thermoset polyimide. Therefore, in order to prevent the decomposition reaction caused by excessive oxygen during the heat curing process, hydrogen is mixed in to induce a reduction reaction on the surface of the Cu thin film and diffuse it to the outside as water molecules. Thereby, polyimide can be prevented from deteriorating its heat resistance due to reaction with Cu, and at the same time, the adhesion between Cu and polyimide can be improved. In this manner, by thermally curing polyimide in a reducing atmosphere, a polyimide film can be formed directly on the Cu wiring, eliminating the need to coat the front and back surfaces of the Cu wiring with other metal thin films.
本発明によれば、水素ガスの還元作用により、Ｃｕ配線
表面を還元し、微量酸素を外部に放出することができる
。この作用により、ポリイミドワニス中でおこる脱水閉
環反応が促進され、反応を防止し、ポリイミドの耐熱性
の劣化をきたすことなく、Ｃｕ配線上にポリイミド膜を
直接形成することが可能となる。According to the present invention, the surface of the Cu wiring can be reduced by the reducing action of hydrogen gas, and trace amounts of oxygen can be released to the outside. This action promotes the dehydration ring closure reaction that occurs in the polyimide varnish, prevents the reaction, and makes it possible to directly form a polyimide film on the Cu wiring without deteriorating the heat resistance of the polyimide.
以下、本発明の一実施例を図面により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明による多層配線基板とその形成法を示
す、まず、Ｓｉ基板１の上に熱酸化によ゛つて５ｉＯｚ
膜（２μｍ）２を形成し、膜２上に蒸着によりＣｕ膜（
０，１μｍ）３を形成する。FIG. 1 shows a multilayer wiring board according to the present invention and a method for forming the same.
A film (2 μm) 2 was formed, and a Cu film (2 μm) was formed on the film 2 by vapor deposition.
0.1 μm) 3 is formed.
次にＣｕ膜３を下地膜として、ホトリソグラフィーを用
いた選択めっき法により、電解めっきで、第１層Ｃｕ配
線４を形成する。続いてイオンミリングにより、下地膜
３を除去した後、ポリイミドワニス（日立化成工業（株
）製、ＰＩＸ−ＬＩＩＯ）を塗布する。このワニスを還
元性雰囲気（Ａｒ＋１０％Ｈ２、純度９９．９９９％、
含有Ｏｘ Ｏ，ｌｐｐｍ以下）下で、熱硬化（１００℃
×１時間、２０５℃×１時間、３５０℃×３０分）した
、こうして得られたポリイミド膜５の表面を研磨により
平坦化し、第１層絶縁膜ポリイミド６を形成する。さら
に同様のプロセスを用いて第２層Ｃｕ配線７゜第２層絶
縁膜８１表面層９を形成する。続いて表面層９上にはん
だ１０を蒸着した後、加熱し、ＬＳＩＬＬを接続し、Ｃ
ｕ／ポリイミド薄膜多層配線基板を得る。Next, using the Cu film 3 as a base film, a first layer Cu wiring 4 is formed by electrolytic plating using a selective plating method using photolithography. Subsequently, after removing the base film 3 by ion milling, polyimide varnish (manufactured by Hitachi Chemical Co., Ltd., PIX-LIIO) is applied. This varnish was heated in a reducing atmosphere (Ar + 10% H2, purity 99.999%,
Thermal curing (100°C
x 1 hour, 205° C. x 1 hour, 350° C. x 30 minutes) The surface of the polyimide film 5 thus obtained is flattened by polishing, and a first layer insulating film polyimide 6 is formed. Furthermore, using the same process, a second layer Cu wiring 7° and a second layer insulating film 81 surface layer 9 are formed. Subsequently, after depositing solder 10 on the surface layer 9, it is heated, the LSILL is connected, and the C
A u/polyimide thin film multilayer wiring board is obtained.
第２図（ａ）は、本発明により絶縁膜のポリイミドを還
元性雰囲気で熱硬化して得られた多層配線基板、第２図
（ｂ）は、従来の技術による不活性雰囲気（Ｎ２．純度
９９．９９９ ％、含有０２゜０ 、１ ｐｐ１１以
下）でポリイミドを熱硬化して得られた多層配線基板を
示しでいる。これら、（ａ）、（ｂ）に示す各試料につ
いて、高温での耐湿信頼性を評価するＰＣＴ （１２０
℃、２ａ＋ｗ、湿度１００％）を行ない、第１層配線と
第２層配線間の界面でのはく離状態を比較した結果を第
１表に示す。FIG. 2(a) shows a multilayer wiring board obtained by thermally curing the polyimide of the insulating film in a reducing atmosphere according to the present invention, and FIG. 99.999%, content 02°0, 1 pp11 or less) is a multilayer wiring board obtained by thermosetting polyimide. PCT (120
Table 1 shows the results of comparing the peeling state at the interface between the first layer wiring and the second layer wiring.
その結果、試料（ａ）では、ＰＣＴ１００Ｏ時間後にお
いても、全く、配線間にはく離はみられなかった。しか
し、試料（ｂ）では、ＰＣＴ５０時間後から、第１層と
第２層のポリイミド間から、はく離が進行し、Ｃｕ配腺
とポリイミド間へと、はく離は広がっていく、こうして
ＰＣＴ１００Ｏ時間後には、第１ｙｆＩと第２層の配線
は完全にはく離した。これは、不活性雰囲気で熱硬化す
る際に。As a result, in sample (a), no peeling was observed between the wirings even after 100 hours of PCT. However, in sample (b), after 50 hours of PCT, the peeling progresses from between the polyimide of the first layer and the second layer, and the peeling spreads between the Cu glands and the polyimide. , the first yfI and second layer wirings were completely separated. This is done during heat curing in an inert atmosphere.
Ｃｕと反応して、ポリイミドか、接着性と耐湿性の両特
性において、劣化をきたすことによるものである。This is because polyimide reacts with Cu, causing deterioration in both adhesiveness and moisture resistance.
次に全く劣化のない本来のポリイミドと、Ｃｕと相互反
応をおこし劣化したポリイミドと、本発明による還元性
雰囲気で熱硬化したポリイミドについて各々の色調、熱
分解開始温度、引張り強さ。Next, we will examine the color tone, thermal decomposition onset temperature, and tensile strength of the original polyimide that has not deteriorated at all, the polyimide that has deteriorated due to interaction with Cu, and the polyimide that has been thermally cured in a reducing atmosphere according to the present invention.
破断伸びを測定した。その結果を下記の第２表に示す。The elongation at break was measured. The results are shown in Table 2 below.
その結果、下地膜５ｉＯｚ上に形成したＰＩＱを変質の
ない本来のポリイミドの基準試料とすると、Ｃｕ膜上に
形成したＰＩＱは、大気、 Ｎｚ（９９，９９９％、含
有Ｏｘ ０．２ｐｐｍ以下）、真空（５Ｘ１０−’Ｔｏ
ｒｒ）のいずれの雰囲気で熱硬化しても、膜特性の劣化
がみられた。まず、膜の色調の黄橙色から茶褐色に変色
し、熱分゛解温度は、４５０℃から３５０〜３７０℃に
低下した。さらに機械的性質についても、引張り強さが
約４０％、破断伸びが約６０％低下した。しかし、本発
明による還元性（Ａ ｒ ＋ １０％Ｈｚ 、純度９９
．９９９ ％、含有ＯｚＯ，１ｐｐ−以下）雰囲気で
熱硬化したポリイミドは１色調、熱分解温度９機械的性
質のいずれも。As a result, if PIQ formed on a base film of 5 iOz is used as a standard sample of original polyimide without deterioration, PIQ formed on a Cu film is exposed to air, Nz (99,999%, Ox content 0.2 ppm or less), Vacuum (5X10-'To
Deterioration of film properties was observed no matter which atmosphere was used for thermal curing. First, the color of the film changed from yellow-orange to brownish-brown, and the thermal decomposition temperature decreased from 450°C to 350-370°C. Furthermore, regarding the mechanical properties, the tensile strength decreased by about 40% and the elongation at break decreased by about 60%. However, the reducibility according to the present invention (A r + 10% Hz, purity 99
．． 999%, OzO content, 1 pp- or less) The polyimide heat-cured in an atmosphere has one color tone, thermal decomposition temperature, and mechanical properties of 9.
５ｉＯｚ上のＰＩＱと変わらず、膜特性における劣化は
全くみられなかった。It was the same as PIQ on 5iOz, and no deterioration in film properties was observed.
次に各々の膜の化学構造について、赤外分光袋 −
置で解析した。第３図にその結果を示す、第３図（ａ）
は、５ｉｆｔ上の膜、（ｂ）はＣｕ上に形成し変質した
ＰＩＱ（Ｎｚ中で熱硬化）、（ｃ）は本発明の還元性雰
囲気で熱硬化したＣｕ上のＰＩＱの結果を示している。Next, regarding the chemical structure of each film, we will explain the infrared spectroscopic bag −
The analysis was carried out at The results are shown in Figure 3, Figure 3(a).
shows the results of the film on 5ift, (b) shows the results of PIQ formed on Cu and modified (thermally cured in Nz), and (c) shows the results of PIQ on Cu that was thermoset in a reducing atmosphere according to the present invention. There is.
その結果、（ｂ）に示す相互反応により変質した膜では
、変質のない膜（ａ）と比べると、イミドカルボニル基
のピークが減少していた。またイミドカルボニル以外の
新たなカルボニル層が検出された。これは、分析の結果
、アミドカルボニル基であることがわかった。つまり、
耐熱性を有するイミドカルボニル基が減少し、熱的に不
安定なアミドカルボニル基が存在することが、耐熱性の
低下を起こしている原因であるのがわかった。また本発
明による還元性雰囲気で熱硬化した膜では（Ｃ）に示す
ように。As a result, in the film modified by the interaction shown in (b), the peak of imidocarbonyl groups was reduced compared to the film (a) without modification. In addition, a new carbonyl layer other than imidocarbonyl was detected. As a result of analysis, this was found to be an amide carbonyl group. In other words,
It was found that the decrease in heat-resistant imide carbonyl groups and the presence of thermally unstable amide carbonyl groups are the causes of the decrease in heat resistance. Further, in the film thermally cured in a reducing atmosphere according to the present invention, as shown in (C).
（ａ）の膜と全く変わらず、化学構造の変化を起こして
いないことがわかった０以上の結果より。Based on the results of 0 or more, it was found that there was no change in the chemical structure, which was completely the same as the film in (a).
本発明によればＣｕとポリイミドの相互反応によるポリ
イミドの耐熱性の劣化を防止できることが。According to the present invention, deterioration of heat resistance of polyimide due to mutual reaction between Cu and polyimide can be prevented.
化学構造の上からも確かめられた。It was also confirmed from the chemical structure.
〔発明の効果〕
以上、説明したように、本発明によれば、Ｃｕ配線上に
直接ポリイミド膜を形成することができる。これにより
、Ｃｕ配線をＣｒ等の金属でコーティングする必要がな
くなり、配線の比抵抗を低減でき、配線の信号伝送特性
が向上する。また、界面の接着性も向上し、かつポリイ
ミドの耐熱性も改善されるのでＣｕ／ポリイミド配線の
信頼性も向上できる。こうして１本発明によりＣｕ／ポ
リイミド薄膜多層配線を大型計算機用ＬＳＩ実装基板に
応用することができ、信号伝送速度が、従来に比べ飛躍
的に高速化する。[Effects of the Invention] As described above, according to the present invention, a polyimide film can be formed directly on Cu wiring. This eliminates the need to coat the Cu wiring with metal such as Cr, reduces the specific resistance of the wiring, and improves the signal transmission characteristics of the wiring. Furthermore, since the adhesion at the interface is improved and the heat resistance of polyimide is also improved, the reliability of the Cu/polyimide wiring can also be improved. Thus, according to the present invention, Cu/polyimide thin film multilayer wiring can be applied to LSI mounting boards for large computers, and the signal transmission speed can be dramatically increased compared to the conventional one.
第１図は本発明による多層配線基板の製造工程図、第２
図（ａ）は本発明によるＰＣ，Ｔ評価用多層配線基板を
示す断面図、第２図（ｂ）は従来の技術を用いた多層配
線基板を示す断面図、第３図（ａ）は、５ｉＯｚ上のＰ
ＩＱ膜の、（ｂ）Ｃｕ上のＰＩＱで劣化した膜の、（Ｑ
）はＣｕ上のＰＩ Ｑで本発明による還元性雰囲気で
熱硬化した膜についての赤外分光分析結果を示すチャー
トである。
１・・・Ｓｉ基板、２・・・熱酸化５ｉＯｚ膜、３・・
・蒸着により形成したＣｕ膜、４・・・電解めっきによ
り形成した第１層Ｃｕ配線、５・・・ポリイミド膜、６
・・・表面を平坦化したポリイミド膜、７・・・第２層
Ｃｕ配線、８・・・ポリイミド膜、９・・・表面層、１
０・・・はんだ、１１・・・ＬＳＩ、１２・・・Ｓｉ基
板、１３・・・熱酸化５ｉＯｚ ＩＩｌ、１４−第１層
Ｃｕ配線、１５−・・還元性雰囲気で熱硬化したポリイ
ミド膜、１６・・・不活性雰囲気で熱硬化したポリイミ
ド膜、１７・・・第２層Ｃｕ配線、１８・・・還元性雰
囲気で熱硬化したポリイミド膜、１９・・・不活性雰囲
気で熱硬化したポリイミド膜、２ｏ・・・表面層、２１
・・・はんだ、第１図
皐λ図
（ＣＬ） （ｂ）
帛３図
Ａ数（ｃ ｍｌ ＞FIG. 1 is a manufacturing process diagram of a multilayer wiring board according to the present invention, and FIG.
Figure (a) is a cross-sectional view showing a multilayer wiring board for PC and T evaluation according to the present invention, Figure 2 (b) is a cross-sectional view showing a multilayer wiring board using the conventional technology, and Figure 3 (a) is P on 5iOz
of the IQ film, (b) of the film degraded by PIQ on Cu, (Q
) is a chart showing the results of infrared spectroscopy of a film thermally cured in a reducing atmosphere with PI Q on Cu according to the present invention. 1...Si substrate, 2...thermal oxidation 5iOz film, 3...
・Cu film formed by vapor deposition, 4... First layer Cu wiring formed by electrolytic plating, 5... Polyimide film, 6
...Polyimide film with a flattened surface, 7...Second layer Cu wiring, 8...Polyimide film, 9...Surface layer, 1
0... Solder, 11... LSI, 12... Si substrate, 13... Thermal oxidation 5iOz IIl, 14- First layer Cu wiring, 15-... Polyimide film thermoset in a reducing atmosphere, 16... Polyimide film heat-cured in an inert atmosphere, 17... Second layer Cu wiring, 18... Polyimide film heat-cured in a reducing atmosphere, 19... Polyimide heat-cured in an inert atmosphere. Membrane, 2o... surface layer, 21
...Solder, Figure 1 Figure 1 (CL) (b) Figure 3 A number (c ml >
Claims (1)
金属表面に直接、絶縁性のポリイミド樹脂が被着して成
る多層配線を形成する工程において、還元性雰囲気で、
該ポリイミド樹脂を熱硬化することを特徴とする多層配
線基板の形成方法。 ２、特許請求の範囲第１項記載の該導体配線が、銅、銀
、およびニッケルから選ばれたものであることを特徴と
する多層配線基板の形成方法。[Claims] 1. In the step of forming a multilayer wiring in which an insulating polyimide resin is directly adhered to a conductor wiring metal surface formed on an insulating substrate or an insulating film, in a reducing atmosphere,
A method for forming a multilayer wiring board, comprising thermosetting the polyimide resin. 2. A method for forming a multilayer wiring board, characterized in that the conductor wiring according to claim 1 is selected from copper, silver, and nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7148887A JPS63239898A (en) | 1987-03-27 | 1987-03-27 | Method of forming multilayer interconnection board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7148887A JPS63239898A (en) | 1987-03-27 | 1987-03-27 | Method of forming multilayer interconnection board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63239898A true JPS63239898A (en) | 1988-10-05 |
Family
ID=13462092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7148887A Pending JPS63239898A (en) | 1987-03-27 | 1987-03-27 | Method of forming multilayer interconnection board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63239898A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565706A (en) * | 1994-03-18 | 1996-10-15 | Hitachi, Ltd. | LSI package board |
-
1987
- 1987-03-27 JP JP7148887A patent/JPS63239898A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565706A (en) * | 1994-03-18 | 1996-10-15 | Hitachi, Ltd. | LSI package board |
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