JPS6323324A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS6323324A JPS6323324A JP16857686A JP16857686A JPS6323324A JP S6323324 A JPS6323324 A JP S6323324A JP 16857686 A JP16857686 A JP 16857686A JP 16857686 A JP16857686 A JP 16857686A JP S6323324 A JPS6323324 A JP S6323324A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- path difference
- optical path
- optical fiber
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title description 13
- 238000005530 etching Methods 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 230000003595 spectral effect Effects 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 210000003323 beak Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000001055 reflectance spectroscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16857686A JPS6323324A (ja) | 1986-07-16 | 1986-07-16 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16857686A JPS6323324A (ja) | 1986-07-16 | 1986-07-16 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6323324A true JPS6323324A (ja) | 1988-01-30 |
| JPH0518454B2 JPH0518454B2 (enrdf_load_stackoverflow) | 1993-03-12 |
Family
ID=15870608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16857686A Granted JPS6323324A (ja) | 1986-07-16 | 1986-07-16 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323324A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002526918A (ja) * | 1998-09-30 | 2002-08-20 | ラム リサーチ コーポレーション | プラズマ・エッチング工程の精度を改善する方法および装置 |
| JP2004006742A (ja) * | 2002-03-25 | 2004-01-08 | Adaptive Plasma Technology Corp | 半導体製造用プラズマエッチング法およびその装置 |
| JP2006518913A (ja) * | 2003-02-14 | 2006-08-17 | ユナクシス・ユーエスエイ・インコーポレーテッド | 時分割多重化エッチプロセスにおける終点検出 |
| JP2017092116A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び処理状態検出方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117251A (en) * | 1980-12-31 | 1982-07-21 | Ibm | Device for monitoring thickness change |
| JPS61152017A (ja) * | 1984-12-26 | 1986-07-10 | Hitachi Ltd | エツチングモニタ装置 |
-
1986
- 1986-07-16 JP JP16857686A patent/JPS6323324A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117251A (en) * | 1980-12-31 | 1982-07-21 | Ibm | Device for monitoring thickness change |
| JPS61152017A (ja) * | 1984-12-26 | 1986-07-10 | Hitachi Ltd | エツチングモニタ装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002526918A (ja) * | 1998-09-30 | 2002-08-20 | ラム リサーチ コーポレーション | プラズマ・エッチング工程の精度を改善する方法および装置 |
| JP2004006742A (ja) * | 2002-03-25 | 2004-01-08 | Adaptive Plasma Technology Corp | 半導体製造用プラズマエッチング法およびその装置 |
| JP2006518913A (ja) * | 2003-02-14 | 2006-08-17 | ユナクシス・ユーエスエイ・インコーポレーテッド | 時分割多重化エッチプロセスにおける終点検出 |
| JP2017092116A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び処理状態検出方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0518454B2 (enrdf_load_stackoverflow) | 1993-03-12 |
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