JPS63224321A - Molecular beam epitaxy system - Google Patents

Molecular beam epitaxy system

Info

Publication number
JPS63224321A
JPS63224321A JP5817687A JP5817687A JPS63224321A JP S63224321 A JPS63224321 A JP S63224321A JP 5817687 A JP5817687 A JP 5817687A JP 5817687 A JP5817687 A JP 5817687A JP S63224321 A JPS63224321 A JP S63224321A
Authority
JP
Japan
Prior art keywords
evaporation
shroud
openings
evaporation source
partitions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5817687A
Other languages
Japanese (ja)
Inventor
Eiji Nukanobu
糠信 英治
Shohei Koshiba
小芝 昇平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP5817687A priority Critical patent/JPS63224321A/en
Publication of JPS63224321A publication Critical patent/JPS63224321A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent other evaporation materials from mixing into evaporation sources by providing the evaporation sources so that the openings thereof are positioned within the space surrounded by the extended plane of the inner surface of a shroud, and providing partitions for separating the openings of the evaporation sources. CONSTITUTION:A bearer 2 and a shroud 5 are provided within a chamber 1, evaporation sources 3 are provided so that the openings thereof are positioned within the extended plane of the inner cylinder of the shroud 5, and there are provided partitions 6 for separating the openings of the evaporation sources. Accordingly, the molecular beam from an evaporation source 3a is intercepted by partitions 6a, 6b whereby shadows 7 of the partitions 6a, 6b are generated above the openings of evaporation sorces 3c-3f and there is no deposition of the evaporation material of the evaporation source 3a. With this the evaporation material from the evaporation source 3a can be prevented from mixing into the evaporation sources 3c-3f.

Description

【発明の詳細な説明】 C産業上の利用分野〕 この発明は、ウェハに分子線にて所望の薄膜を成長させ
る為の分子線エピタキシー装置(以下MBE装置と略記
する)に関する。
DETAILED DESCRIPTION OF THE INVENTION C. Industrial Application Field The present invention relates to a molecular beam epitaxy apparatus (hereinafter abbreviated as MBE apparatus) for growing a desired thin film on a wafer using molecular beams.

(発明の概要〕 チェンバー内に、筒状のシュラウドと、ウェハを支持す
る為の支持具と、前記シュラウドの内面の延長面によっ
て取り囲まれる空間の内部に開口部が(る様に複数の蒸
発源を設置し、更に該蒸発源の開口部を隔てる隔壁を前
記シュラウドに設置する。
(Summary of the Invention) A chamber includes a cylindrical shroud, a support for supporting a wafer, and a plurality of evaporation sources such that an opening is provided in a space surrounded by an extended surface of the inner surface of the shroud. is installed in the shroud, and a partition wall separating the opening of the evaporation source is installed in the shroud.

〔従来の技術〕[Conventional technology]

従来、第3図に示すように、MBE装置には蒸発源から
の熱輻射対策および真空度の向上の目的からLN、を冷
媒とするシュラウド8を設置することが知られていた。
Conventionally, as shown in FIG. 3, it has been known to install a shroud 8 using LN as a refrigerant in an MBE apparatus in order to prevent heat radiation from an evaporation source and improve the degree of vacuum.

(発明が解決しようとする問題点〕 しかし、従来のMBE装置は、蒸発′a3aからの蒸発
物質が蒸発B3bの開口部の鉛直上方の点Pに付着し、
酸点Pから付着物の落下がある場合前記蒸発71!3b
に前記蒸発#3aの蒸発物質が混入する欠点があった。
(Problems to be Solved by the Invention) However, in the conventional MBE apparatus, the evaporated substance from the evaporator 'a3a adheres to a point P vertically above the opening of the evaporator B3b.
If there is a drop of deposits from the acid point P, the evaporation 71!3b
However, there was a drawback that the evaporated substance of evaporation #3a was mixed into the evaporation material.

そこで、この発明は蒸発源へ他の蒸発物質が混入するこ
とが無いMBE装置を得ることを目的としている。
Therefore, an object of the present invention is to obtain an MBE apparatus in which no other evaporated substances are mixed into the evaporation source.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するために、この発明は、MBE装置
において、チェンバーと、該チェンバー内に設置された
筒状のシュラウドと、ウェハを支持する為の支持具と、
前記シュラウドの内面の延長面によって取り囲まれる空
間の内部に開口部がくる様に設置された蒸発源と、更に
該蒸発源の開口部を隔てる為の隔壁から構成する。
In order to solve the above problems, the present invention provides an MBE apparatus that includes a chamber, a cylindrical shroud installed in the chamber, a support for supporting a wafer,
It consists of an evaporation source installed so that its opening is located inside a space surrounded by an extended surface of the inner surface of the shroud, and a partition wall for separating the opening of the evaporation source.

〔作用〕[Effect]

上記のように構成されたMBE装置のシュラウドおよび
チェンバー内壁および隔壁に付着した蒸発物質が蒸発源
に落下しても、該蒸発源中の蒸発物質には他の蒸発物質
の混入は無く、蒸発源物質への不純物の混入を防止でき
るのである。
Even if the evaporative substances adhering to the shroud, chamber inner walls, and partition walls of the MBE apparatus configured as described above fall into the evaporation source, the evaporative substances in the evaporation source are not mixed with other evaporative substances, and the evaporation source It is possible to prevent impurities from entering the substance.

〔実施例〕〔Example〕

以下に、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.

第1図において、チェンバー1内に支持具2.シュラウ
ド5を設置し、該シュラウド5の内面円筒の延長面の内
部に開口部がくるように蒸発源3を設置し、更に該蒸発
源の開口部を隔てる隔壁6を設置する。第2図に横断面
図を示す。
In FIG. 1, a support 2. A shroud 5 is installed, an evaporation source 3 is installed so that the opening is located inside the extended surface of the inner cylinder of the shroud 5, and a partition wall 6 is installed to separate the opening of the evaporation source. Figure 2 shows a cross-sectional view.

以上のような実施例において、蒸発源3aがらの分子線
は前記隔壁6a、6bによって遮られ、蒸発源3c+ 
 3d、3e、3fの開口部の上方には前記隔壁6a、
6bの影7が生じ、前記蒸発源3aの蒸発物質は付着せ
ず、前記蒸発源3c、3d、3e、3fへの前記蒸発1
fi3aからの蒸発物質の混入を防止できる。
In the embodiment described above, the molecular beams from the evaporation source 3a are blocked by the partition walls 6a and 6b, and the molecular beams from the evaporation source 3c+
Above the openings of 3d, 3e, and 3f, the partition wall 6a,
6b is formed, the evaporation material of the evaporation source 3a does not adhere to the evaporation source 3c, 3d, 3e, and 3f.
Contamination of evaporated substances from fi3a can be prevented.

〔発明の効果〕〔Effect of the invention〕

この発明は、以上説明したように、チェンバー内に、筒
状のシュラウドと、ウェハを支持する為の支持具を設置
し、前記シュラウドの内面の延長面によって取り囲まれ
る空間の内部に開口部がくる様に蒸発源を設置し、更に
該蒸発源の開口部を隔てる隔壁を設置することによって
、蒸発源への他の蒸発物質の混入を無くす効果がある。
As explained above, in this invention, a cylindrical shroud and a support for supporting a wafer are installed in a chamber, and an opening is located inside a space surrounded by an extended surface of the inner surface of the shroud. By installing the evaporation source in a similar manner and further installing a partition wall that separates the opening of the evaporation source, there is an effect of eliminating the contamination of other evaporation substances into the evaporation source.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明にかかるMBE装置の縦断面図、第
2図は、この発明にかかるMBE装置の横断面図、第3
図は、従来のMBE装置に用いられているシュラウドの
縦断面図である。 1・・・チェンバー 2・・・支持具 3・・・蒸発源 5・・・シュラウド 6・・・隔壁 以上 出願人 セイコー電子工業株式会社 従来のMBEK!/′lj遷灯[T]図第3図
FIG. 1 is a longitudinal cross-sectional view of the MBE apparatus according to the present invention, FIG. 2 is a cross-sectional view of the MBE apparatus according to the present invention, and FIG.
The figure is a longitudinal sectional view of a shroud used in a conventional MBE device. 1... Chamber 2... Support 3... Evaporation source 5... Shroud 6... Partition wall and above Applicant: Seiko Electronic Industries, Ltd. Conventional MBEK! /'lj Transmission [T] Figure Figure 3

Claims (1)

【特許請求の範囲】[Claims] チェンバーと、該チェンバー内に設置された筒状のシュ
ラウドと、前記シェラウドの内面の延長面によって取り
囲まれる空間の内部に開口部がくる様に設置された複数
の蒸発源と、ウェハを支持する為の支持具とから成り、
更に前記シュラウドは前記蒸発源の開口部をそれぞれ隔
てる為の隔壁を有することを特徴とする分子線エピタキ
シー装置。
a chamber, a cylindrical shroud installed in the chamber, a plurality of evaporation sources installed so that an opening is located inside a space surrounded by an extended surface of the inner surface of the shroud, and a wafer for supporting the wafer. It consists of a support device,
Furthermore, the molecular beam epitaxy apparatus is characterized in that the shroud has partition walls for separating the openings of the evaporation sources.
JP5817687A 1987-03-13 1987-03-13 Molecular beam epitaxy system Pending JPS63224321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5817687A JPS63224321A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5817687A JPS63224321A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy system

Publications (1)

Publication Number Publication Date
JPS63224321A true JPS63224321A (en) 1988-09-19

Family

ID=13076688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5817687A Pending JPS63224321A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy system

Country Status (1)

Country Link
JP (1) JPS63224321A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5711813A (en) * 1994-09-29 1998-01-27 Mitsubishi Denki Kabushiki Kaisha Epitaxial crystal growth apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61258411A (en) * 1985-05-13 1986-11-15 Hitachi Ltd Vacuum processing device
JPS61270813A (en) * 1985-05-24 1986-12-01 Sumitomo Electric Ind Ltd Molecular beam epitaxial growth equipment
JPS6272113A (en) * 1985-09-26 1987-04-02 Matsushita Electric Ind Co Ltd Molecular beam crystal growth device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61258411A (en) * 1985-05-13 1986-11-15 Hitachi Ltd Vacuum processing device
JPS61270813A (en) * 1985-05-24 1986-12-01 Sumitomo Electric Ind Ltd Molecular beam epitaxial growth equipment
JPS6272113A (en) * 1985-09-26 1987-04-02 Matsushita Electric Ind Co Ltd Molecular beam crystal growth device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5711813A (en) * 1994-09-29 1998-01-27 Mitsubishi Denki Kabushiki Kaisha Epitaxial crystal growth apparatus

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