JPS6321210A - 水素化アモルファスシリコン又は水素化アモルファスゲルマニウムの蒸着方法 - Google Patents

水素化アモルファスシリコン又は水素化アモルファスゲルマニウムの蒸着方法

Info

Publication number
JPS6321210A
JPS6321210A JP62148875A JP14887587A JPS6321210A JP S6321210 A JPS6321210 A JP S6321210A JP 62148875 A JP62148875 A JP 62148875A JP 14887587 A JP14887587 A JP 14887587A JP S6321210 A JPS6321210 A JP S6321210A
Authority
JP
Japan
Prior art keywords
hydrogenated amorphous
deposition
amorphous silicon
polysilanes
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62148875A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559841B2 (https=
Inventor
チン　リ　チュー
シャーリー　シャン　チ　チュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electric Power Research Institute Inc
Original Assignee
Electric Power Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Research Institute Inc filed Critical Electric Power Research Institute Inc
Publication of JPS6321210A publication Critical patent/JPS6321210A/ja
Publication of JPH0559841B2 publication Critical patent/JPH0559841B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28—Deposition of only one other non-metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
JP62148875A 1986-07-15 1987-06-15 水素化アモルファスシリコン又は水素化アモルファスゲルマニウムの蒸着方法 Granted JPS6321210A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US885916 1978-03-13
US06/885,916 US4792460A (en) 1986-07-15 1986-07-15 Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium

Publications (2)

Publication Number Publication Date
JPS6321210A true JPS6321210A (ja) 1988-01-28
JPH0559841B2 JPH0559841B2 (https=) 1993-09-01

Family

ID=25387991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62148875A Granted JPS6321210A (ja) 1986-07-15 1987-06-15 水素化アモルファスシリコン又は水素化アモルファスゲルマニウムの蒸着方法

Country Status (2)

Country Link
US (1) US4792460A (https=)
JP (1) JPS6321210A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005314191A (ja) * 2004-04-30 2005-11-10 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造方法
JP2009242238A (ja) * 2009-07-16 2009-10-22 Mitsubishi Materials Corp 多結晶シリコンの製造方法
JP2013512841A (ja) * 2009-12-04 2013-04-18 シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン
CN110970287A (zh) * 2018-09-28 2020-04-07 长鑫存储技术有限公司 制备非晶硅薄膜的方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02292831A (ja) * 1989-05-02 1990-12-04 Toshiba Corp 半導体装置の製造方法
US5361328A (en) * 1989-09-28 1994-11-01 Ezel, Inc. Data processing system using a neural network
JP2724374B2 (ja) * 1989-10-11 1998-03-09 株式会社鷹山 データ処理装置
FR2692598B1 (fr) * 1992-06-17 1995-02-10 Air Liquide Procédé de dépôt d'un film contenant du silicium à la surface d'un substrat métallique et procédé de traitement anti-corrosion.
US5264256A (en) * 1992-09-08 1993-11-23 Xerox Corporation Apparatus and process for glow discharge comprising substrate temperature control by shutter adjustment
FR2702467B1 (fr) * 1993-03-11 1995-04-28 Air Liquide Procédé de préparation du disilane à partir du monosilane par décharge électrique et piégeage cryogénique et nouveau réacteur pour sa mise en Óoeuvre.
AUPP055497A0 (en) * 1997-11-26 1997-12-18 Pacific Solar Pty Limited High rate deposition of amorphous silicon films
US6436488B1 (en) * 2000-06-12 2002-08-20 Agilent Technologies, Inc. Chemical vapor deposition method for amorphous silicon and resulting film
US6858196B2 (en) * 2001-07-19 2005-02-22 Asm America, Inc. Method and apparatus for chemical synthesis
US7867627B2 (en) * 2004-12-13 2011-01-11 Silcotek Corporation Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures
JP5888831B2 (ja) * 2005-10-05 2016-03-22 シン フィルム エレクトロニクス エーエスエー 架橋済みポリマー及びその製造方法
JP5735522B2 (ja) 2009-10-27 2015-06-17 シルコテック コーポレイション 化学気相成長コーティング、物品、及び方法
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
EP2814997A1 (en) * 2012-02-16 2014-12-24 Dow Corning Corporation Deposition system and method of forming a metalloid-containing material therewith
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
US10487403B2 (en) 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
DE102020211833A1 (de) 2020-09-22 2022-03-24 Evonik Operations Gmbh Verfahren zur Herstellung oligomerer Hydridosilane aus SiH4

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127214A (ja) * 1983-12-10 1985-07-06 Honjiyou Chem Kk ジシランの製造方法
JPS61106411A (ja) * 1984-10-27 1986-05-24 Seitetsu Kagaku Co Ltd ジシランおよびトリシランの製造法
JPS61186212A (ja) * 1985-02-12 1986-08-19 Seitetsu Kagaku Co Ltd ジシランの製造方法
JPS62132720A (ja) * 1985-12-02 1987-06-16 Fuji Electric Co Ltd 高次シラン生成方法
JPS62132721A (ja) * 1985-12-02 1987-06-16 Fuji Electric Co Ltd 高次シラン生成方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824121A (en) * 1970-10-14 1974-07-16 Union Carbide Corp Production of silicon metal from dichlorosilane
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4100330A (en) * 1977-03-28 1978-07-11 Ppg Industries, Inc. Method for coating glass with silicon and a metal oxide and resulting product
JPS5930130B2 (ja) * 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
US4353788A (en) * 1980-08-26 1982-10-12 The United States Of America As Represented By The United States Department Of Energy RF Sputtering for preparing substantially pure amorphous silicon monohydride
US4388344A (en) * 1981-08-31 1983-06-14 United Technolgies Corporation Method of repairing surface defects in coated laser mirrors
US4386117A (en) * 1981-11-20 1983-05-31 Gordon Roy G Coating process using alkoxy substituted silicon-bearing reactant
US4430149A (en) * 1981-12-30 1984-02-07 Rca Corporation Chemical vapor deposition of epitaxial silicon
US4439463A (en) * 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
US4505947A (en) * 1982-07-14 1985-03-19 The Standard Oil Company (Ohio) Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma
JPS5969142A (ja) * 1982-10-13 1984-04-19 Toshiba Corp 膜形成方法及び膜形成装置
US4491604A (en) * 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
JPS59129772A (ja) * 1983-01-18 1984-07-26 Ushio Inc 光化学蒸着装置
US4509451A (en) * 1983-03-29 1985-04-09 Colromm, Inc. Electron beam induced chemical vapor deposition
JPH07111957B2 (ja) * 1984-03-28 1995-11-29 圭弘 浜川 半導体の製法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127214A (ja) * 1983-12-10 1985-07-06 Honjiyou Chem Kk ジシランの製造方法
JPS61106411A (ja) * 1984-10-27 1986-05-24 Seitetsu Kagaku Co Ltd ジシランおよびトリシランの製造法
JPS61186212A (ja) * 1985-02-12 1986-08-19 Seitetsu Kagaku Co Ltd ジシランの製造方法
JPS62132720A (ja) * 1985-12-02 1987-06-16 Fuji Electric Co Ltd 高次シラン生成方法
JPS62132721A (ja) * 1985-12-02 1987-06-16 Fuji Electric Co Ltd 高次シラン生成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005314191A (ja) * 2004-04-30 2005-11-10 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造方法
JP2009242238A (ja) * 2009-07-16 2009-10-22 Mitsubishi Materials Corp 多結晶シリコンの製造方法
JP2013512841A (ja) * 2009-12-04 2013-04-18 シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ 水素化ポリゲルマンの製造方法及び水素化ポリゲルマン
CN110970287A (zh) * 2018-09-28 2020-04-07 长鑫存储技术有限公司 制备非晶硅薄膜的方法
CN110970287B (zh) * 2018-09-28 2022-12-02 长鑫存储技术有限公司 制备非晶硅薄膜的方法

Also Published As

Publication number Publication date
US4792460A (en) 1988-12-20
JPH0559841B2 (https=) 1993-09-01

Similar Documents

Publication Publication Date Title
US4792460A (en) Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
US4615298A (en) Method of making non-crystalline semiconductor layer
US4292343A (en) Method of manufacturing semiconductor bodies composed of amorphous silicon
JPS6324923B2 (https=)
JP2566914B2 (ja) 薄膜半導体素子及びその形成法
JPH084070B2 (ja) 薄膜半導体素子及びその形成法
JPS62151572A (ja) 堆積膜形成法
CN117165917A (zh) 一种制备大尺寸单层二硫化铼薄膜的方法
JPH079059B2 (ja) 炭素薄膜の製造方法
JPS62151571A (ja) 堆積膜形成装置
JPS63234513A (ja) 堆積膜形成法
JPH03214724A (ja) 薄膜製造方法
JPS63224216A (ja) 堆積膜形成法
JPS6299463A (ja) 堆積膜形成法
JPS61179868A (ja) 堆積膜形成法
JPS61193429A (ja) 堆積膜形成法
JPS5916326A (ja) 薄膜の製造方法
JPS62183108A (ja) 堆積膜形成法
JPH01129970A (ja) 機能性堆積膜形成法及びそのための装置
JPS62228478A (ja) 堆積膜形成装置
JPS6357778A (ja) 堆積膜製造装置
JPS62280371A (ja) 機能性堆積膜の形成法及び装置
JPS6318856B2 (https=)
JPS62163313A (ja) 薄膜多層構造およびその形成方法
JPS62152121A (ja) 堆積膜形成装置