JPS6320825A - Diffusion method for semiconductor device - Google Patents

Diffusion method for semiconductor device

Info

Publication number
JPS6320825A
JPS6320825A JP16618486A JP16618486A JPS6320825A JP S6320825 A JPS6320825 A JP S6320825A JP 16618486 A JP16618486 A JP 16618486A JP 16618486 A JP16618486 A JP 16618486A JP S6320825 A JPS6320825 A JP S6320825A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
diffusion
thickness
direction
formed
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16618486A
Inventor
Tetsuo Shiba
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To lower curvature of a diffusion front to enlarge dielectric strength, by forming an inclined part, which becomes gradually thinner in the direction of thickness, at the end part of an opening in a diffusion mask and by using this diffusion mask in diffusion process.
CONSTITUTION: An inclined part 2a which becomes gradually thinner in the direction of thickness is formed at the end part of an opening in a diffusion mask 2. Because of formation of this inclined part 2a in the direction of thickness in the diffusion mask 2, a transparent film is formed on the thin region of this inclined part 2a, and the degree of this transparency decreases as the diffusion mask 2 becomes thinner, therefore a diffusion front becoming shallow. Thus the diffusion front is formed in moderate inclined structure. when inverse voltage is applied on such structure, concentration of an electric field occurs in the region where the diffusion front is curved, however, a degree of its concentration is small because the curvature is small there. Hence, dielectric strength can be enlarged.
COPYRIGHT: (C)1988,JPO&Japio
JP16618486A 1986-07-14 1986-07-14 Diffusion method for semiconductor device Pending JPS6320825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16618486A JPS6320825A (en) 1986-07-14 1986-07-14 Diffusion method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16618486A JPS6320825A (en) 1986-07-14 1986-07-14 Diffusion method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6320825A true true JPS6320825A (en) 1988-01-28

Family

ID=15826631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16618486A Pending JPS6320825A (en) 1986-07-14 1986-07-14 Diffusion method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6320825A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7359202B2 (en) 1992-05-20 2008-04-15 Seiko Epson Corporation Printer apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315756A (en) * 1976-07-28 1978-02-14 Mitsubishi Electric Corp Production of semiconductor device
JPS5384688A (en) * 1976-12-30 1978-07-26 Fujitsu Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315756A (en) * 1976-07-28 1978-02-14 Mitsubishi Electric Corp Production of semiconductor device
JPS5384688A (en) * 1976-12-30 1978-07-26 Fujitsu Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7359202B2 (en) 1992-05-20 2008-04-15 Seiko Epson Corporation Printer apparatus

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