JPS63204914A - High output amplifier for high frequency - Google Patents

Abstract

PURPOSE:To improve the effect of radiating head by constituting a high frequency amplification circuit including an amplification transistor and an input/ output circuit in a shielding case and providing a partition part which positions between the input/output circuits and abuts on the amplification transistor in a shielding case cover which covers the opening of the shielding case. CONSTITUTION:The partition part 6 is projected to be set in the shielding case cover 7 so as to be unified and it divides between the input/output of an input matching circuit 3 and an output matching circuit 4, and also it provides a notching stage part 8 which is made to abut on the upper surface of a high frequency high output transistor 1. By providing the partition part 6, thus, the isolation characteristic between input/output can be made excellent and by making the partition part 6 abut on the upper surface of the high frequency high output transistor 1, the effect of radiating head can be improved much more.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high frequency, high power amplifier that can be used for microwave communications and the like.

BACKGROUND OF THE INVENTION In recent years, high-frequency, high-output amplifiers used in microwave communications have come to use solid-state elements in multiple stages to obtain high output. The heat thus generated is dissipated in the shield case of the high frequency, high power amplifier.

An example of the above-mentioned conventional high frequency high output amplifier will be described below with reference to the drawings.

FIG. 3 shows a conventional high frequency, high output amplifier, in which input matching circuit 3. A high-frequency, high-output transistor 1 is fastened to a shield case 6 with fixing screws 2 for grounding and heat radiation, and is covered with a shield case lid 7.

Problems to be Solved by the Invention However, in the above configuration, the isolation characteristics between the input and output of the high frequency, high output transistor 1 are not good due to feedback due to stray capacitance, so oscillations etc. occur.
This causes instability in circuit operation.

In addition, the power efficiency is not good and the amount of heat generated is large, so
It is necessary to dissipate this heat, but as shown in Figure 3, the heat dissipation method in which only the bottom surface of the high-frequency, high-power transistor main body is brought into contact with the shield case 5 does not provide a sufficient heat dissipation effect. The problem was that the temperature of No. 1 rose, and the high frequency characteristics could not be fully brought out.

In view of the above-mentioned problems, the present invention provides a high-frequency, high-output amplifier that spatially separates the input and output of a high-frequency, high-output transistor and further improves the heat dissipation effect of the high-frequency, high-output transistor. .

Means for Solving the Problems In order to solve the above problems, the high frequency, high power amplifier of the present invention includes an amplification transistor and an input/output transistor in a shield case.
A high-frequency amplification circuit including an output circuit is configured, and a shield case lid covering an opening of the shield case is provided with a partition located between the input and output circuits and in contact with the amplification transistor.

According to the above-described configuration, the present invention spatially separates the input and output of the high-frequency, high-output transistor by the partition portion that is integrally formed and protrudes from the shield case lid, and improves the isolation characteristics between the input and output. Furthermore, by forming a cutout step portion on the lower surface of the partition portion that comes into contact with the upper surface of the high frequency high power transistor, the heat dissipation effect of the high frequency high power transistor can be further improved.

EXAMPLE Hereinafter, a high frequency, high output amplifier according to an example of the present invention will be described with reference to the drawings.

FIG. 1 shows an exploded perspective view of a high frequency, high power amplifier in one embodiment of the present invention.

FIG. 2 is a sectional view of the main part of FIG. 1.

In FIGS. 1 and 2, reference numeral 1 denotes a high frequency, high power transistor, which is fastened by a fixing screw 2 to a shield case 6 that shields the high frequency, high power transistor 1. As shown in FIG. 3 is an input matching circuit for matching high-frequency input signals; 4 is an output matching circuit for matching high-frequency output signals; 6 is integrally formed by protruding from shield case lid 7; input matching circuit 3 and output matching circuit 4; This is a partition section provided with a notched step section 8 which separates the input and output of the transistor 1 and comes into contact with the upper surface of the high frequency high output transistor 1. Incidentally, the partition portion 6 may of course be secured to the shield case lid 7 with screws. Further, if the upper surface of the high frequency transistor 1 and the end surface of the shield case 5 are on the same plane, the cutout step portion 8 is not necessary.

As described above, according to this embodiment, by providing the partition section 6, the isolation characteristics between the input and output can be improved, and the partition section 6 is placed in contact with the upper surface of the high-frequency, high-output transistor 1. By contacting them, the heat dissipation effect can be further improved.

Effects of the Invention As described above, according to the present invention, a high frequency amplification circuit including an amplifying transistor and an input/output circuit is configured in a shield case, and the human/output circuit is provided in a shield case lid that covers the opening of the shield case. Located between the
By providing a partition that comes into contact with the amplification transistor, the input and output of the high-frequency, high-output transistor are spatially separated, and the isolation characteristics between the input and output are improved. Factors that cause unstable operation can be removed and stable high frequency characteristics can be obtained. Furthermore, since the heat dissipation effect of the high frequency, high power transistor can be further improved, a stable high frequency amplifier can be achieved, and the high frequency performance of the high frequency, high power transistor can be fully demonstrated.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view of a high frequency, high power amplifier according to an embodiment of the present invention, FIG. 2 is a sectional view of a main part of FIG. 1, and FIG. 3 is an exploded perspective view of a conventional high frequency, high power amplifier. 1... High frequency high output transistor, 2...
...Fixing screw, 3...Input matching circuit, 4...
...output matching circuit, 5...shield case,
6... Partition section? ...Shield case lid, 8...Notch step.

Claims (1)

[Claims] A high frequency amplification circuit including an amplification transistor, an input circuit, and an output circuit is configured in a shield case, and a high frequency amplification circuit including an amplification transistor, an input circuit, and an output circuit is provided on a shield case lid that covers the opening of the shield case, and is located between the input circuit and the output circuit, and is connected to the amplification transistor. A high-frequency, high-output amplifier with abutting partitions.