JPS63186874A - Vapor synthesis device for carbon film - Google Patents

Vapor synthesis device for carbon film

Info

Publication number
JPS63186874A
JPS63186874A JP1948387A JP1948387A JPS63186874A JP S63186874 A JPS63186874 A JP S63186874A JP 1948387 A JP1948387 A JP 1948387A JP 1948387 A JP1948387 A JP 1948387A JP S63186874 A JPS63186874 A JP S63186874A
Authority
JP
Japan
Prior art keywords
substrate
plate
microwaves
temp
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1948387A
Other versions
JP2532227B2 (en
Inventor
Kouichi Ishihori
Misao Kurihara
Tsutomu Moriya
Mantaro Yamamoto
Original Assignee
Denki Kogyo Kk
Seiko Instr & Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kogyo Kk, Seiko Instr & Electronics Ltd filed Critical Denki Kogyo Kk
Priority to JP62019483A priority Critical patent/JP2532227B2/en
Publication of JPS63186874A publication Critical patent/JPS63186874A/en
Application granted granted Critical
Publication of JP2532227B2 publication Critical patent/JP2532227B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To maintain the temp. of a substrate at a prescribed and uniform temp., by using a material which absorbs microwaves and can be heated up to a specific temp. when energized to constitute an imposing plate to be imposed with the substrate.
CONSTITUTION: The substrate 4 is imposed on the imposing table 5 in a reaction vessel 3 and a gaseous mixture composed of hydrocarbon and hydrogen is supplied into the vessel from a supply pipe 6 and is discharged from a discharge pipe 7 to maintain the specified pressure in the vessel 3. The microwaves generated in a microwave oscillator 1 is then fed through a waveguide 2 to the inside of the vessel 3 to convert the gaseous mixture to plasma. The substrate 4 and the sample plate 5 are then heated by microwaves and the plate 5 is further supplied with the electric power from a power source 9 to cause the self-heat generation. The sample plate 5 is formed of a material (SiC, etc.) which has the property as the electric material to absorb the microwaves and has the property as an electric resistor to permit heating up to 500W1,000°C when energized. The easy temp. control of the plate 5 is thereby permitted.
COPYRIGHT: (C)1988,JPO&Japio
JP62019483A 1987-01-29 1987-01-29 Carbon film vapor phase synthesizer Expired - Fee Related JP2532227B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62019483A JP2532227B2 (en) 1987-01-29 1987-01-29 Carbon film vapor phase synthesizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62019483A JP2532227B2 (en) 1987-01-29 1987-01-29 Carbon film vapor phase synthesizer

Publications (2)

Publication Number Publication Date
JPS63186874A true JPS63186874A (en) 1988-08-02
JP2532227B2 JP2532227B2 (en) 1996-09-11

Family

ID=12000592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62019483A Expired - Fee Related JP2532227B2 (en) 1987-01-29 1987-01-29 Carbon film vapor phase synthesizer

Country Status (1)

Country Link
JP (1) JP2532227B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491112A (en) * 1989-06-30 1996-02-13 Im Institutet For Mikroelektronik Method and arrangement for treating silicon plates
WO1998044543A1 (en) * 1997-03-31 1998-10-08 Lam Research Corporation Method for microwave plasma substrate heating
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54179060U (en) * 1978-06-08 1979-12-18
JPS57113438U (en) * 1980-12-29 1982-07-13
JPS5927754A (en) * 1982-08-04 1984-02-14 Nippon Steel Corp Nozzle for producing light-gage amorphous alloy strip
JPS60200519A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Heating element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54179060U (en) * 1978-06-08 1979-12-18
JPS57113438U (en) * 1980-12-29 1982-07-13
JPS5927754A (en) * 1982-08-04 1984-02-14 Nippon Steel Corp Nozzle for producing light-gage amorphous alloy strip
JPS60200519A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Heating element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491112A (en) * 1989-06-30 1996-02-13 Im Institutet For Mikroelektronik Method and arrangement for treating silicon plates
WO1998044543A1 (en) * 1997-03-31 1998-10-08 Lam Research Corporation Method for microwave plasma substrate heating
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6881608B2 (en) 1999-12-22 2005-04-19 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US7802539B2 (en) 2000-06-30 2010-09-28 Lam Research Corporation Semiconductor processing equipment having improved particle performance

Also Published As

Publication number Publication date
JP2532227B2 (en) 1996-09-11

Similar Documents

Publication Publication Date Title
US4804431A (en) Microwave plasma etching machine and method of etching
US20020146366A1 (en) Process for efficient microwave hydrogen production
JP4446030B2 (en) Liquid plasma generator and liquid plasma generation method
JPS5930709A (en) Method for synthesizing carbon film and carbon granule in vapor phase
JPH04234409A (en) Gas phase polymerization process
ES2010686B3 (en) Procedure for the treatment of tobacco and related organic materials.
JPH0369593A (en) Method and device for synthesizing diamond
JPH03183677A (en) Method for forming electrooptic waveguide layer
JPS6448421A (en) Ashing method
ES8501468A1 (en) Method and device to recover chemical products from residual liquid from the production of wood paper paste
US7067204B2 (en) Submerged plasma generator, method of generating plasma in liquid and method of decomposing toxic substance with plasma in liquid
NO981852L (en) FremgangsmÕte and apparatus for delivery of gas / evaporation of solid materials
JPS63107898A (en) Method for synthesizing diamond with plasma
ES2048096A1 (en) Process for rendering usable disposal products
JPH03183779A (en) Method and device for chemical vapor growth
Onoe et al. Selective synthesis of acetylene from methane by microwave plasma reactions
JPH0319700A (en) Temperature control device and reaction vessel
JPS644232A (en) Endothermic reaction apparatus for gases
JPH04253166A (en) Electrochemical cell device having fuel mixing nozzle outside
JPH0317272A (en) Deposited film forming device
ES2099026A1 (en) Process for the production of iron carbide
ES8302075A1 (en) Method and device for the production of a gas containing substantially carbon monoxide and gaseous hydrogen.
JPH0277125A (en) Ashing of organic material
JPS58110494A (en) Synthesizing method for diamond
RU94031561A (en) Method for decomposition of hydrocarbons and device for its embodiment

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees