JPS63186454A - Heat sink device for semiconductor device - Google Patents

Heat sink device for semiconductor device

Info

Publication number
JPS63186454A
JPS63186454A JP1900987A JP1900987A JPS63186454A JP S63186454 A JPS63186454 A JP S63186454A JP 1900987 A JP1900987 A JP 1900987A JP 1900987 A JP1900987 A JP 1900987A JP S63186454 A JPS63186454 A JP S63186454A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
metal
insulating film
surface
rough
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1900987A
Inventor
Yoshihiko Minematsu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To simplify a working process, and prevent the damage to insulating material due to handling, by making the upper surface of a heat dissipation substrate of metal material rough, forming thereon an insulating film, and forming a metal film on the insulating film.
CONSTITUTION: A heat dissipation substrate 1 is made of a metal material with high thermal conductivity, and the surface is made rough. An insulating film 12 is formed on the rough surface of the substrate. A metal film 13 is formed on the insulating film 12. A semiconductor device is joined on the metal film 13. For example, the upper surface of the heat dissipation substrate 1 composed of a metal material with excellent thermal conductivity such as a copper plate is made rough by a treatment such as shot blasting, in order that an insulating material is easy to attach to the surface. By spray coating, powder of a insulating material is attached to the upper rough surface of the heat dissipation substrate 1, and the insulating film 12 is partly formed. Further, on the upper surface of the insulating film 12, a metal film 13 is formed by spray coating of metal powder such as copper and titanium.
COPYRIGHT: (C)1988,JPO&Japio
JP1900987A 1987-01-28 1987-01-28 Heat sink device for semiconductor device Pending JPS63186454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1900987A JPS63186454A (en) 1987-01-28 1987-01-28 Heat sink device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1900987A JPS63186454A (en) 1987-01-28 1987-01-28 Heat sink device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS63186454A true true JPS63186454A (en) 1988-08-02

Family

ID=11987506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1900987A Pending JPS63186454A (en) 1987-01-28 1987-01-28 Heat sink device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS63186454A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646018A1 (en) * 1989-04-12 1990-10-19 Mitsubishi Electric Corp semiconductor device and process for its manufacturing
EP0548497A1 (en) * 1991-12-20 1993-06-30 SGS-THOMSON MICROELECTRONICS S.r.l. Plastic encapsulated semiconductor device incorporating a heat sink of metal having controlled roughness contact surfaces, and method of making the same
US5455453A (en) * 1991-07-01 1995-10-03 Sumitomo Electric Industries, Ltd. Plastic package type semiconductor device having a rolled metal substrate
DE102007050405A1 (en) * 2007-10-22 2009-04-23 Continental Automotive Gmbh Electric power component, in particular power semiconductor module, with a cooling device and method for the surface and heat-conductive bonding of a cooling apparatus to an electrical

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646018A1 (en) * 1989-04-12 1990-10-19 Mitsubishi Electric Corp semiconductor device and process for its manufacturing
US5455453A (en) * 1991-07-01 1995-10-03 Sumitomo Electric Industries, Ltd. Plastic package type semiconductor device having a rolled metal substrate
US5643834A (en) * 1991-07-01 1997-07-01 Sumitomo Electric Industries, Ltd. Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers
EP0548497A1 (en) * 1991-12-20 1993-06-30 SGS-THOMSON MICROELECTRONICS S.r.l. Plastic encapsulated semiconductor device incorporating a heat sink of metal having controlled roughness contact surfaces, and method of making the same
US6002173A (en) * 1991-12-20 1999-12-14 Sgs-Thomson Microelectronics S.R.L. Semiconductor device package with metal-polymer joint of controlled roughness
DE102007050405A1 (en) * 2007-10-22 2009-04-23 Continental Automotive Gmbh Electric power component, in particular power semiconductor module, with a cooling device and method for the surface and heat-conductive bonding of a cooling apparatus to an electrical
DE102007050405B4 (en) * 2007-10-22 2010-09-09 Continental Automotive Gmbh Electric power component, in particular power semiconductor module, with a cooling device and method for the surface and heat-conductive bonding of a cooling device of an electric power component

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