JPS63181330A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS63181330A
JPS63181330A JP62012497A JP1249787A JPS63181330A JP S63181330 A JPS63181330 A JP S63181330A JP 62012497 A JP62012497 A JP 62012497A JP 1249787 A JP1249787 A JP 1249787A JP S63181330 A JPS63181330 A JP S63181330A
Authority
JP
Japan
Prior art keywords
groove
substrate
opening part
silicon substrate
etch rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62012497A
Inventor
Masa Kase
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP62012497A priority Critical patent/JPS63181330A/en
Publication of JPS63181330A publication Critical patent/JPS63181330A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To shorten the process by cleaning the inner surface of a groove formed in a silicon substrate using a cleaning liquid which is faster in the etch rate of the etching mask of the silicon substrate than in the etch rate of the substrate, thereby beveling the opening part of the groove.
CONSTITUTION: With a silicon dioxide film 22 on a silicon substrate 21 as a mask, the silicon substrate 21 is etched to form a groove 25 in the substrate 21, and thereafter the inner surface of the groove 25 is cleaned using a cleaning liquid which is faster in the etch rate of the etching mask 22 than in the etch rate of the silicon substrate 21, e.g., a mixed liquid of hydrofluoric acid, acetic acid and pure water. As a result, in a groove opening part 24, the silicon substrate 21 surface surrounding the opening part 24 is exposed. And, when the substrate 21 surface surrounding the groove opening part 24 is exposed in this way, the substrate silicon of the corner section of the groove opening part 24 is etched from the lateral and vertical directions, so the corner section becomes a taper 28, whereby a groove with a taper 28 in the opening part 24 is formed. With this, the etching of the substrate can be shortened.
COPYRIGHT: (C)1988,JPO&Japio
JP62012497A 1987-01-23 1987-01-23 Manufacture of semiconductor device Pending JPS63181330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62012497A JPS63181330A (en) 1987-01-23 1987-01-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62012497A JPS63181330A (en) 1987-01-23 1987-01-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS63181330A true JPS63181330A (en) 1988-07-26

Family

ID=11807008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62012497A Pending JPS63181330A (en) 1987-01-23 1987-01-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS63181330A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
JP2007500454A (en) * 2003-05-20 2007-01-11 フェアチャイルド セミコンダクター コーポレーション The structure and method of forming a trench mosfet with self-consistency
JP2008098593A (en) * 2006-09-15 2008-04-24 Ricoh Co Ltd Semiconductor device and manufacturing method thereof
JP2009206502A (en) * 2008-01-29 2009-09-10 Sanyo Electric Co Ltd Mesa type semiconductor device, and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
JP2007500454A (en) * 2003-05-20 2007-01-11 フェアチャイルド セミコンダクター コーポレーション The structure and method of forming a trench mosfet with self-consistency
JP2008098593A (en) * 2006-09-15 2008-04-24 Ricoh Co Ltd Semiconductor device and manufacturing method thereof
JP2009206502A (en) * 2008-01-29 2009-09-10 Sanyo Electric Co Ltd Mesa type semiconductor device, and manufacturing method thereof

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